Phonon‐Limited Electron Mobility in a Polar Semiconductor Quantum Well
Identifieur interne : 001F71 ( Main/Exploration ); précédent : 001F70; suivant : 001F72Phonon‐Limited Electron Mobility in a Polar Semiconductor Quantum Well
Auteurs : H. Le N [Espagne] ; F. Le N ; F. ComasSource :
- physica status solidi (b) [ 0370-1972 ] ; 1992-04-01.
English descriptors
- Teeft :
- Acoustic, Acoustic deformation, Acoustic phonons, Appl, Approximation works, Boundary conditions, Coma, Conduction channel, Dielectric, Dielectric function, Different couplings, Drift mobility, Electron concentration, Electron mobility, Exact expression, Experimental parameter values, Fermi level, First subband, Form factor, Frohlich hamiltonian, High temperatures, Important temperatures, Interface phonons, Intersubband transitions, Iterative, Iterative formula, Iterative method, Iterative procedure, Lattice vibrations, Mobility, Mobility calculations, Mobility values, Mode couplings, Numerical results, Other hand, Phonon, Phonons, Phys, Polar semiconductor, Polar semiconductor quantum, Present paper, Previous work, Previous works, Quantum wells, Screening effect, Screening effects, Semiconductor, Semiconductor superlattices, Similar comments, Simplest models, Subband, Such modes, Temperature dependence, Total mobility, Transport phenomena, Typical value, Unscreened interaction, Wave vector.
Abstract
Low‐field drift mobility for transport parallel to the interfaces in a polar semiconductor quantum well is calculated following an iterative procedure. Calculations are carried out in the size‐quantum‐limit approximation for a degenerate electron gas. Screening of the electron–phonon interaction via acoustic deformation potential, piezoelectric of the accoustic branch, and longitudinal optical mode couplings is taken into account by means of a dielectric function deduced in an earlier work. Confinement of LO vibrations is also taken into account by means of an appropriate Hamiltonian successfully employed in previous works. The role of the electron–LO‐phonon interaction is accurately established and the conclusion is drawn that this coupling becomes considerable at intermediate and very important at sufficiently high temperatures for quantum wells of the GaAs/AlGaAs type. Comparison with experiment gives an acceptable agreement between calculated and measured mobility values.
Mit einem Iterationsverfahren wird die Niedrigfeld‐Driftbeweglichkeit für den Transport parallel zu den Grenzflächen eines polaren Halbleiter‐Quanten‐Wells berechnet, und zwar in der Näherung des Size‐Quantenlimits für ein entartetes Elektronengas. Die Abschirmung der Elektron–Phonon‐Wechselwirkung mittels Kopplung durch das akustische Deformationspotential, die akustisch‐piezoelektrischen und die longitudinal‐optischen Moden wird durch eine in einer früheren Arbeit abgeleitete dielektrische Funktion berücksichtigt. Confinement der LO‐Schwingungen wird ebenfalls durch einen in einer früheren Arbeit verwendeten, geeigneten Hamilton‐Operator einbezogen. Die Rolle der Elektron–LO‐Phonon‐Wechselwirkung wird exakt nachgewiesen, und es wird gefunden, daß diese Kopplung für QW vom Typ GaAs/AlGaAs bei mittleren Temperaturen beträchtlich und bei hinreichend hohen Temperaturen sehr bedeutend ist. Vergleich mit dem Experiment ergibt eine annehmbare Übereinstimmung zwischen theoretischen und gemessenen Beweglichkeitswerten.
Url:
DOI: 10.1002/pssb.2221700211
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Comas</name><affiliation><wicri:noCountry code="subField">Habana</wicri:noCountry></affiliation></author></analytic><monogr></monogr><series><title level="j" type="main">physica status solidi (b)</title><title level="j" type="alt">PHYSICA STATUS SOLIDI B</title><idno type="ISSN">0370-1972</idno><idno type="eISSN">1521-3951</idno><imprint><biblScope unit="vol">170</biblScope><biblScope unit="issue">2</biblScope><biblScope unit="page" from="449">449</biblScope><biblScope unit="page" to="461">461</biblScope><biblScope unit="page-count">13</biblScope><publisher>WILEY‐VCH Verlag</publisher><pubPlace>Berlin</pubPlace><date type="published" when="1992-04-01">1992-04-01</date></imprint><idno type="ISSN">0370-1972</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0370-1972</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="Teeft" xml:lang="en"><term>Acoustic</term><term>Acoustic deformation</term><term>Acoustic phonons</term><term>Appl</term><term>Approximation works</term><term>Boundary conditions</term><term>Coma</term><term>Conduction channel</term><term>Dielectric</term><term>Dielectric function</term><term>Different couplings</term><term>Drift mobility</term><term>Electron concentration</term><term>Electron mobility</term><term>Exact expression</term><term>Experimental parameter values</term><term>Fermi level</term><term>First subband</term><term>Form factor</term><term>Frohlich hamiltonian</term><term>High temperatures</term><term>Important temperatures</term><term>Interface phonons</term><term>Intersubband transitions</term><term>Iterative</term><term>Iterative formula</term><term>Iterative method</term><term>Iterative procedure</term><term>Lattice vibrations</term><term>Mobility</term><term>Mobility calculations</term><term>Mobility values</term><term>Mode couplings</term><term>Numerical results</term><term>Other hand</term><term>Phonon</term><term>Phonons</term><term>Phys</term><term>Polar semiconductor</term><term>Polar semiconductor quantum</term><term>Present paper</term><term>Previous work</term><term>Previous works</term><term>Quantum wells</term><term>Screening effect</term><term>Screening effects</term><term>Semiconductor</term><term>Semiconductor superlattices</term><term>Similar comments</term><term>Simplest models</term><term>Subband</term><term>Such modes</term><term>Temperature dependence</term><term>Total mobility</term><term>Transport phenomena</term><term>Typical value</term><term>Unscreened interaction</term><term>Wave vector</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Low‐field drift mobility for transport parallel to the interfaces in a polar semiconductor quantum well is calculated following an iterative procedure. Calculations are carried out in the size‐quantum‐limit approximation for a degenerate electron gas. Screening of the electron–phonon interaction via acoustic deformation potential, piezoelectric of the accoustic branch, and longitudinal optical mode couplings is taken into account by means of a dielectric function deduced in an earlier work. Confinement of LO vibrations is also taken into account by means of an appropriate Hamiltonian successfully employed in previous works. The role of the electron–LO‐phonon interaction is accurately established and the conclusion is drawn that this coupling becomes considerable at intermediate and very important at sufficiently high temperatures for quantum wells of the GaAs/AlGaAs type. Comparison with experiment gives an acceptable agreement between calculated and measured mobility values.</div><div type="abstract" xml:lang="de">Mit einem Iterationsverfahren wird die Niedrigfeld‐Driftbeweglichkeit für den Transport parallel zu den Grenzflächen eines polaren Halbleiter‐Quanten‐Wells berechnet, und zwar in der Näherung des Size‐Quantenlimits für ein entartetes Elektronengas. Die Abschirmung der Elektron–Phonon‐Wechselwirkung mittels Kopplung durch das akustische Deformationspotential, die akustisch‐piezoelektrischen und die longitudinal‐optischen Moden wird durch eine in einer früheren Arbeit abgeleitete dielektrische Funktion berücksichtigt. Confinement der LO‐Schwingungen wird ebenfalls durch einen in einer früheren Arbeit verwendeten, geeigneten Hamilton‐Operator einbezogen. Die Rolle der Elektron–LO‐Phonon‐Wechselwirkung wird exakt nachgewiesen, und es wird gefunden, daß diese Kopplung für QW vom Typ GaAs/AlGaAs bei mittleren Temperaturen beträchtlich und bei hinreichend hohen Temperaturen sehr bedeutend ist. Vergleich mit dem Experiment ergibt eine annehmbare Übereinstimmung zwischen theoretischen und gemessenen Beweglichkeitswerten.</div></front></TEI><affiliations><list><country><li>Espagne</li></country><region><li>Communauté de Madrid</li></region><settlement><li>Madrid</li></settlement></list><tree><noCountry><name sortKey="Comas, F" sort="Comas, F" uniqKey="Comas F" first="F." last="Comas">F. Comas</name><name sortKey="Le N, F" sort="Le N, F" uniqKey="Le N F" first="F." last="Le N">F. Le N</name></noCountry><country name="Espagne"><region name="Communauté de Madrid"><name sortKey="Le N, H" sort="Le N, H" uniqKey="Le N H" first="H." last="Le N">H. Le N</name></region></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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