The optical properties of thin AlGaAs-GaAs quantum wells on misorientated substrates with (110) terraces. A study of interface roughness using photoluminescence
Identifieur interne : 001F64 ( Main/Exploration ); précédent : 001F63; suivant : 001F65The optical properties of thin AlGaAs-GaAs quantum wells on misorientated substrates with (110) terraces. A study of interface roughness using photoluminescence
Auteurs :Source :
- Semiconductor Science and Technology [ 0268-1242 ] ; 1992-07-01.
English descriptors
- Teeft :
- Appl, Average terrace width, Cation, Cation migration length, Exciton, Exciton wavefunction, Fluctuation, Full width, Gaas, Growth interruption, Interface, Interface islands, Interface roughness, Inverted interface, Island formation, Island size, Lett, Linewidth, Linewidths, Lower energies, Luminescence, Luminescence linewidth, Luminescence linewidths, Misorientated, Misorientated substrates, Misorientation, Misorientation angle, Monolayer, Phys, Quantum, Quantum wells, Rheed measurements, Roughness, Step edges, Terrace, Terrace width, Thin wells.
Url:
DOI: 10.1088/0268-1242/7/7/004
Affiliations:
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Le document en format XML
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