Electron scattering from acoustic phonons in quantum dots and other nanostructures
Identifieur interne : 000F05 ( Istex/Curation ); précédent : 000F04; suivant : 000F06Electron scattering from acoustic phonons in quantum dots and other nanostructures
Auteurs : P. A. Knipp [États-Unis] ; T. L. Reinecke [États-Unis]Source :
- Solid State Electronics [ 0038-1101 ] ; 1996.
English descriptors
- Teeft :
- Acoustic, Acoustic phonon, Acoustic phonons, Carrier relaxation, Charge carriers, Effective mass, Effective mass approximation, Electronic states, Emission rate, Ground state, Interaction hamiltonian, Longitudinal sound speed, Matrix, Matrix element, Matrix elements, Nanostructure, Nanostructures, Normal derivatives, Other nanostructures, Phonon, Phonons, Plane waves, Present work, Quantum, Quantum dots, Quantum wells, Quantum wires, Ripple, Ripple mechanism, Semiconductor nanostructures, Slight deviations, Small effects, Small sizes, Spatial dependence, Usual deformation.
Abstract
Abstract: Scattering of electrons from acoustic phonons in semiconductor nanostructures occurs via an interaction, which we call the “ripple mechanism”, in addition to the usual deformation potential coupling. We provide a general derivation of this novel coupling mechanism and give detailed expressions for it which are valid for all nanostructure systems, including those with quasi-zero-, one- and two-dimensional geometries. Calculations are presented here of the electron scattering rates due to acoustic phonons for quantum dots in a variety of shapes. We find that scattering due to the ripple mechanism dominates that from the deformation potential for dot sizes less than ∼50 nm and that the ripple mechanism contribution can be much larger for smaller dot sizes.
Url:
DOI: 10.1016/0038-1101(95)00325-8
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Reinecke</name><affiliation wicri:level="1"><mods:affiliation>Naval Research Laboratory, Washington, DC 20375-5347, U.S.A.</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>Naval Research Laboratory, Washington, DC 20375-5347</wicri:regionArea></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:B06728F2CBD5F3D3662649C45C1E159B7F87E4AE</idno><date when="1996" year="1996">1996</date><idno type="doi">10.1016/0038-1101(95)00325-8</idno><idno type="url">https://api.istex.fr/ark:/67375/6H6-5D07QDBL-2/fulltext.pdf</idno><idno type="wicri:Area/Istex/Corpus">000F05</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Corpus" wicri:corpus="ISTEX">000F05</idno><idno type="wicri:Area/Istex/Curation">000F05</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a">Electron scattering from acoustic phonons in quantum dots and other nanostructures</title><author><name sortKey="Knipp, P A" sort="Knipp, P A" uniqKey="Knipp P" first="P. A." last="Knipp">P. A. Knipp</name><affiliation wicri:level="1"><mods:affiliation>Department of Physics and Computer Science, Christopher Newport University, Newport News, VA 23606-2998, U.S.A.</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>Department of Physics and Computer Science, Christopher Newport University, Newport News, VA 23606-2998</wicri:regionArea></affiliation></author><author><name sortKey="Reinecke, T L" sort="Reinecke, T L" uniqKey="Reinecke T" first="T. L." last="Reinecke">T. L. Reinecke</name><affiliation wicri:level="1"><mods:affiliation>Naval Research Laboratory, Washington, DC 20375-5347, U.S.A.</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>Naval Research Laboratory, Washington, DC 20375-5347</wicri:regionArea></affiliation></author></analytic><monogr></monogr><series><title level="j">Solid State Electronics</title><title level="j" type="abbrev">SSE</title><idno type="ISSN">0038-1101</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1996">1996</date><biblScope unit="volume">40</biblScope><biblScope unit="issue">1–8</biblScope><biblScope unit="page" from="343">343</biblScope><biblScope unit="page" to="347">347</biblScope></imprint><idno type="ISSN">0038-1101</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0038-1101</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="Teeft" xml:lang="en"><term>Acoustic</term><term>Acoustic phonon</term><term>Acoustic phonons</term><term>Carrier relaxation</term><term>Charge carriers</term><term>Effective mass</term><term>Effective mass approximation</term><term>Electronic states</term><term>Emission rate</term><term>Ground state</term><term>Interaction hamiltonian</term><term>Longitudinal sound speed</term><term>Matrix</term><term>Matrix element</term><term>Matrix elements</term><term>Nanostructure</term><term>Nanostructures</term><term>Normal derivatives</term><term>Other nanostructures</term><term>Phonon</term><term>Phonons</term><term>Plane waves</term><term>Present work</term><term>Quantum</term><term>Quantum dots</term><term>Quantum wells</term><term>Quantum wires</term><term>Ripple</term><term>Ripple mechanism</term><term>Semiconductor nanostructures</term><term>Slight deviations</term><term>Small effects</term><term>Small sizes</term><term>Spatial dependence</term><term>Usual deformation</term></keywords></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Abstract: Scattering of electrons from acoustic phonons in semiconductor nanostructures occurs via an interaction, which we call the “ripple mechanism”, in addition to the usual deformation potential coupling. We provide a general derivation of this novel coupling mechanism and give detailed expressions for it which are valid for all nanostructure systems, including those with quasi-zero-, one- and two-dimensional geometries. Calculations are presented here of the electron scattering rates due to acoustic phonons for quantum dots in a variety of shapes. We find that scattering due to the ripple mechanism dominates that from the deformation potential for dot sizes less than ∼50 nm and that the ripple mechanism contribution can be much larger for smaller dot sizes.</div></front></TEI></record>Pour manipuler ce document sous Unix (Dilib)
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