Pyrolysis effect of group V vapor sources on the composition ranges for metal-organic vapor phase epitaxy growth of III-V semiconductors
Identifieur interne : 000E77 ( Istex/Curation ); précédent : 000E76; suivant : 000E78Pyrolysis effect of group V vapor sources on the composition ranges for metal-organic vapor phase epitaxy growth of III-V semiconductors
Auteurs : Changrong Li [République populaire de Chine] ; Weijing Zhang [République populaire de Chine] ; Fuming Wang [République populaire de Chine, Niger]Source :
- Journal of Phase Equilibria and Diffusion [ 1547-7037 ] ; 2004-02-01.
Abstract
Abstract: The pyrolysis effect of NH3 and PH3 vapor sources on the composition ranges necessary for growing single-phase semiconductors was studied with respect to the metal-organic vapor phase epitaxy (MOVPE) of GaN and (Ga1−x In x )P semiconductors. The Ga-N-C-H system and the Ga-In-P-C-H system were thermodynamically analyzed respectively under the conditions of the equilibrium pyrolysis, the partial pyrolysis, and the non-pyrolysis of the vapor phase species, NH3 and PH3. Both the complete equilibrium and the constraint equilibrium in these two systems were calculated with the aid of the specially designed database files and Thermo-Calc software. The experimental MOVPE data from the literature were compared with calculated results. The correspondence of the theoretical prediction with the experimental data indicates that the thermodynamic analysis for the MOVPE process of GaN and (Ga1− xIn x )P semiconductors needs to be considered in terms of the practical pyrolysis of NH3 and PH3 vapor sources. The approach of the complete thermodynamic equilibrium is applied only to some specific temperature region or certain epitaxy processes after typical pretreatment of vapor sources.
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DOI: 10.1007/s11669-004-0170-1
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<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title xml:lang="en">Pyrolysis effect of group V vapor sources on the composition ranges for metal-organic vapor phase epitaxy growth of III-V semiconductors</title><author><name sortKey="Li, Changrong" sort="Li, Changrong" uniqKey="Li C" first="Changrong" last="Li">Changrong Li</name><affiliation wicri:level="1"><mods:affiliation>School of Materials Science and Engineering, University of Science and Technology Beijing, 100083, Beijing, People’s Republic of China</mods:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>School of Materials Science and Engineering, University of Science and Technology Beijing, 100083, Beijing</wicri:regionArea></affiliation></author><author><name sortKey="Zhang, Weijing" sort="Zhang, Weijing" uniqKey="Zhang W" first="Weijing" last="Zhang">Weijing Zhang</name><affiliation wicri:level="1"><mods:affiliation>School of Materials Science and Engineering, University of Science and Technology Beijing, 100083, Beijing, People’s Republic of China</mods:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>School of Materials Science and Engineering, University of Science and Technology Beijing, 100083, Beijing</wicri:regionArea></affiliation></author><author><name sortKey="Wang, Fuming" sort="Wang, Fuming" uniqKey="Wang F" first="Fuming" last="Wang">Fuming Wang</name><affiliation wicri:level="1"><mods:affiliation>School of Metallurgical Engineering, University of Science and Technology, Beijing, 100083, Beijing, People’s Republic of China</mods:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>School of Metallurgical Engineering, University of Science and Technology, Beijing, 100083, Beijing</wicri:regionArea></affiliation><affiliation wicri:level="1"><mods:affiliation>E-mail: fuming@public.fhnet.cn.net</mods:affiliation><country 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first="Fuming" last="Wang">Fuming Wang</name><affiliation wicri:level="1"><mods:affiliation>School of Metallurgical Engineering, University of Science and Technology, Beijing, 100083, Beijing, People’s Republic of China</mods:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>School of Metallurgical Engineering, University of Science and Technology, Beijing, 100083, Beijing</wicri:regionArea></affiliation><affiliation wicri:level="1"><mods:affiliation>E-mail: fuming@public.fhnet.cn.net</mods:affiliation><country wicri:rule="url">Niger</country></affiliation></author></analytic><monogr></monogr><series><title level="j">Journal of Phase Equilibria and Diffusion</title><title level="j" type="abbrev">J Phs Eqil and Diff</title><idno type="ISSN">1547-7037</idno><idno type="eISSN">1863-7345</idno><imprint><publisher>Springer-Verlag</publisher><pubPlace>New York</pubPlace><date type="published" when="2004-02-01">2004-02-01</date><biblScope unit="volume">25</biblScope><biblScope unit="issue">1</biblScope><biblScope unit="page" from="53">53</biblScope><biblScope unit="page" to="58">58</biblScope></imprint><idno type="ISSN">1547-7037</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">1547-7037</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Abstract: The pyrolysis effect of NH3 and PH3 vapor sources on the composition ranges necessary for growing single-phase semiconductors was studied with respect to the metal-organic vapor phase epitaxy (MOVPE) of GaN and (Ga1−x In x )P semiconductors. The Ga-N-C-H system and the Ga-In-P-C-H system were thermodynamically analyzed respectively under the conditions of the equilibrium pyrolysis, the partial pyrolysis, and the non-pyrolysis of the vapor phase species, NH3 and PH3. Both the complete equilibrium and the constraint equilibrium in these two systems were calculated with the aid of the specially designed database files and Thermo-Calc software. The experimental MOVPE data from the literature were compared with calculated results. The correspondence of the theoretical prediction with the experimental data indicates that the thermodynamic analysis for the MOVPE process of GaN and (Ga1− xIn x )P semiconductors needs to be considered in terms of the practical pyrolysis of NH3 and PH3 vapor sources. The approach of the complete thermodynamic equilibrium is applied only to some specific temperature region or certain epitaxy processes after typical pretreatment of vapor sources.</div></front></TEI></record>Pour manipuler ce document sous Unix (Dilib)
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