The influence of the parallel magnetic field on the interband optical absorption in thin films
Identifieur interne : 000E29 ( Istex/Corpus ); précédent : 000E28; suivant : 000E30The influence of the parallel magnetic field on the interband optical absorption in thin films
Auteurs : M. Zału NySource :
- Thin Solid Films [ 0040-6090 ] ; 1983.
English descriptors
- Teeft :
- Absorption spectrum, Band edge wavefunctions, Bulk crystal, Conduction, Conduction band, Corresponding wavefunction, Dominant transitions, Effective mass approximation, Energy correction, Energy corrections, Energy levels, Faraday configuration, Heavy hole levels, Interband, Interband absorption, Interband transitions, Luttinger parameters, Magnetic field, Matrix, Matrix element, Optical absorption, Perturbation, Perturbation theory, Photon energy, Second order, Selection rule, Selection rules, Semiconductor, Semiconductor films, Small perturbation, Subband, Valence, Valence band, Wavefunctions.
Abstract
Abstract: The effect of a parallel magnetic field on the interband optical absorption in size-quantized semiconductor layers is discussed on the basis of the effective mass approximation. The case of the simple and degenerate (germanium-like) valence band is considered.
Url:
DOI: 10.1016/0040-6090(83)90261-4
Links to Exploration step
ISTEX:E44358B074DEAFC74B1911A048A21A7626A4CBA1Le document en format XML
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Curie-Skłodowska University, Nowotki 10, 20-031 Lublin, Poland</mods:affiliation></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:E44358B074DEAFC74B1911A048A21A7626A4CBA1</idno><date when="1983" year="1983">1983</date><idno type="doi">10.1016/0040-6090(83)90261-4</idno><idno type="url">https://api.istex.fr/ark:/67375/6H6-W8ZDC3BR-N/fulltext.pdf</idno><idno type="wicri:Area/Istex/Corpus">000E29</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Corpus" wicri:corpus="ISTEX">000E29</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a">The influence of the parallel magnetic field on the interband optical absorption in thin films</title><author><name sortKey="Zalu Ny, M" sort="Zalu Ny, M" uniqKey="Zalu Ny M" first="M." last="Zału Ny">M. Zału Ny</name><affiliation><mods:affiliation>Institute of Physics, M. 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The case of the simple and degenerate (germanium-like) valence band is considered.</div></front></TEI><istex><corpusName>elsevier</corpusName><keywords><teeft><json:string>valence</json:string><json:string>magnetic field</json:string><json:string>valence band</json:string><json:string>semiconductor</json:string><json:string>matrix</json:string><json:string>subband</json:string><json:string>interband</json:string><json:string>wavefunctions</json:string><json:string>perturbation</json:string><json:string>conduction band</json:string><json:string>matrix element</json:string><json:string>selection rule</json:string><json:string>absorption spectrum</json:string><json:string>optical absorption</json:string><json:string>energy correction</json:string><json:string>faraday configuration</json:string><json:string>corresponding wavefunction</json:string><json:string>perturbation theory</json:string><json:string>second order</json:string><json:string>heavy hole levels</json:string><json:string>conduction</json:string><json:string>interband absorption</json:string><json:string>bulk crystal</json:string><json:string>energy levels</json:string><json:string>small perturbation</json:string><json:string>interband transitions</json:string><json:string>semiconductor films</json:string><json:string>band edge wavefunctions</json:string><json:string>photon energy</json:string><json:string>effective mass approximation</json:string><json:string>luttinger parameters</json:string><json:string>energy corrections</json:string><json:string>selection rules</json:string><json:string>dominant transitions</json:string></teeft></keywords><author><json:item><name>M. 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Curie-Skłodowska University, Nowotki 10, 20-031 Lublin, Poland</affiliation></author><idno type="istex">E44358B074DEAFC74B1911A048A21A7626A4CBA1</idno><idno type="ark">ark:/67375/6H6-W8ZDC3BR-N</idno><idno type="DOI">10.1016/0040-6090(83)90261-4</idno><idno type="PII">0040-6090(83)90261-4</idno></analytic><monogr><title level="j">Thin Solid Films</title><title level="j" type="abbrev">TSF</title><idno type="pISSN">0040-6090</idno><idno type="PII">S0040-6090(00)X0500-7</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1983"></date><biblScope unit="volume">102</biblScope><biblScope unit="issue">1</biblScope><biblScope unit="page" from="87">87</biblScope><biblScope unit="page" to="96">96</biblScope></imprint></monogr></biblStruct></sourceDesc></fileDesc><profileDesc><creation><date>1983</date></creation><langUsage><language ident="en">en</language></langUsage><abstract xml:lang="en"><p>Abstract: The effect of a parallel magnetic field on the interband optical absorption in size-quantized semiconductor layers is discussed on the basis of the effective mass approximation. The case of the simple and degenerate (germanium-like) valence band is considered.</p></abstract></profileDesc><revisionDesc><change when="1983">Published</change></revisionDesc></teiHeader></istex:fulltextTEI><json:item><extension>txt</extension><original>false</original><mimetype>text/plain</mimetype><uri>https://api.istex.fr/ark:/67375/6H6-W8ZDC3BR-N/fulltext.txt</uri></json:item></fulltext><metadata><istex:metadataXml wicri:clean="Elsevier, elements deleted: tail"><istex:xmlDeclaration>version="1.0" encoding="utf-8"</istex:xmlDeclaration><istex:docType PUBLIC="-//ES//DTD journal article DTD version 4.5.2//EN//XML" URI="art452.dtd" name="istex:docType"></istex:docType><istex:document><converted-article version="4.5.2" docsubtype="fla"><item-info><jid>TSF</jid><aid>83902614</aid><ce:pii>0040-6090(83)90261-4</ce:pii><ce:doi>10.1016/0040-6090(83)90261-4</ce:doi><ce:copyright type="unknown" year="1983"></ce:copyright></item-info><head><ce:title>The influence of the parallel magnetic field on the interband optical absorption in thin films</ce:title><ce:author-group><ce:author><ce:given-name>M.</ce:given-name><ce:surname>Załużny</ce:surname><ce:cross-ref refid="AFF1"><ce:sup>a</ce:sup></ce:cross-ref></ce:author><ce:affiliation id="AFF1"><ce:label>a</ce:label><ce:textfn>Institute of Physics, M. Curie-Skłodowska University, Nowotki 10, 20-031 Lublin, Poland</ce:textfn></ce:affiliation></ce:author-group><ce:date-received day="16" month="7" year="1982"></ce:date-received><ce:date-accepted day="4" month="1" year="1983"></ce:date-accepted><ce:abstract><ce:section-title>Abstract</ce:section-title><ce:abstract-sec><ce:simple-para>The effect of a parallel magnetic field on the interband optical absorption in size-quantized semiconductor layers is discussed on the basis of the effective mass approximation. The case of the simple and degenerate (germanium-like) valence band is considered.</ce:simple-para></ce:abstract-sec></ce:abstract></head></converted-article></istex:document></istex:metadataXml><mods version="3.6"><titleInfo><title>The influence of the parallel magnetic field on the interband optical absorption in thin films</title></titleInfo><titleInfo type="alternative" contentType="CDATA"><title>The influence of the parallel magnetic field on the interband optical absorption in thin films</title></titleInfo><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Załużny</namePart><affiliation>Institute of Physics, M. 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