Luminescence from InAsGaSb superlattices
Identifieur interne : 000317 ( France/Analysis ); précédent : 000316; suivant : 000318Luminescence from InAsGaSb superlattices
Auteurs : P. Voisin [France] ; G. Bastard [France] ; C. E. T. Gonçalvès Da Silva [France] ; M. Voos [France] ; L. L. Chang [États-Unis] ; L. Esaki [États-Unis]Source :
- Solid State Communications [ 0038-1098 ] ; 1981.
English descriptors
- Teeft :
- Acceptor, Binding energies, Defect, Donor level, First electron subband, Gasb, Gasb layers, Gash layers, Good quantum number, Impurity, Impurity position, Inas, Inas layers, Interface defects, Lcao calculations, Lnas layers, Lowest temperatures, Luminescence, Luminescence spectra, Luminescence spectrum, Photon energy, Phys, Potential distribution, Radiative recombination, Recombination, Single layer, Subband, Superlattice, Superlattice band, Superlattices, Thickness fluctuations.
Abstract
Abstract: We present luminescence experiments performed in InAsGaSb superlattices as a function of temperature. In addition to radiative recombination between the electron and hole ground subbands, the luminescence spectra exhibit a low-energy tail below 300 K, which leads us to consider simple theoretical models to account for impurities and interface defects in superlattices.
Url:
DOI: 10.1016/0038-1098(81)91051-6
Affiliations:
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<term>Gasb layers</term>
<term>Gash layers</term>
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<term>Impurity position</term>
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<term>Inas layers</term>
<term>Interface defects</term>
<term>Lcao calculations</term>
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<term>Lowest temperatures</term>
<term>Luminescence</term>
<term>Luminescence spectra</term>
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<term>Potential distribution</term>
<term>Radiative recombination</term>
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<front><div type="abstract" xml:lang="en">Abstract: We present luminescence experiments performed in InAsGaSb superlattices as a function of temperature. In addition to radiative recombination between the electron and hole ground subbands, the luminescence spectra exhibit a low-energy tail below 300 K, which leads us to consider simple theoretical models to account for impurities and interface defects in superlattices.</div>
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