Lifetime and crystal order in annealed CZ silicon
Identifieur interne : 000E17 ( Main/Exploration ); précédent : 000E16; suivant : 000E18Lifetime and crystal order in annealed CZ silicon
Auteurs : E. Susi ; A. Poggi ; G. Lulli ; C. Monteverdi ; M. MerliSource :
- physica status solidi (a) [ 0031-8965 ] ; 1988-08-16.
Abstract
The effects of annealing at different temperatures on lifetime and crystal perfection in CZ silicon are reported. Different lifetime degrading and enhancing mechanisms are observed for low (300 to 600 °C) temperatures. Strong degrading effects are observed at temperatures >900 °C. The influence of high temperatures preannealing on 400 °C equilibria is discussed. The experimental findings are explained as the result of a complex interaction among different processes, a reversible FeB pair formation–dissociation, a rearrangement of oxygen aggregates, and a diffusion of deep level impurities.
Url:
DOI: 10.1002/pssa.2211080204
Affiliations:
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Le document en format XML
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<front><div type="abstract" xml:lang="en">The effects of annealing at different temperatures on lifetime and crystal perfection in CZ silicon are reported. Different lifetime degrading and enhancing mechanisms are observed for low (300 to 600 °C) temperatures. Strong degrading effects are observed at temperatures >900 °C. The influence of high temperatures preannealing on 400 °C equilibria is discussed. The experimental findings are explained as the result of a complex interaction among different processes, a reversible FeB pair formation–dissociation, a rearrangement of oxygen aggregates, and a diffusion of deep level impurities.</div>
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