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Lifetime and crystal order in annealed CZ silicon

Identifieur interne : 000E17 ( Main/Exploration ); précédent : 000E16; suivant : 000E18

Lifetime and crystal order in annealed CZ silicon

Auteurs : E. Susi ; A. Poggi ; G. Lulli ; C. Monteverdi ; M. Merli

Source :

RBID : ISTEX:47730EF12B0572637B261AA96F15C0FC9E0ADF90

Abstract

The effects of annealing at different temperatures on lifetime and crystal perfection in CZ silicon are reported. Different lifetime degrading and enhancing mechanisms are observed for low (300 to 600 °C) temperatures. Strong degrading effects are observed at temperatures >900 °C. The influence of high temperatures preannealing on 400 °C equilibria is discussed. The experimental findings are explained as the result of a complex interaction among different processes, a reversible FeB pair formation–dissociation, a rearrangement of oxygen aggregates, and a diffusion of deep level impurities.

Url:
DOI: 10.1002/pssa.2211080204


Affiliations:


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Le document en format XML

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