Depth profiles and damage annealing of 1.06 MeV As2+ Implanted in silicon
Identifieur interne : 000D23 ( Main/Exploration ); précédent : 000D22; suivant : 000D24Depth profiles and damage annealing of 1.06 MeV As2+ Implanted in silicon
Auteurs : A. Armigliato ; R. Nipoti ; G. G. Bentini ; A. M. Mazzone ; M. Bianconi ; A. Nylandsted Larsen ; A. GasparottoSource :
- Materials Science & Engineering B [ 0921-5107 ] ; 1988.
Abstract
Doubly charged arsenic ions have been implanted into crystalline Si〈100〉 at an energy of 1.06 MeV and with doses of 1.2 and 2.4 × 1015 cm−2. Both the chemical and the electrical profiles showed the presence of two peaks, which are attributed to channelling effects, as confirmed by Monte Carlo calculations. Corresponding to these peaks, two bands of lattice defects have been found by electron microscopy after an anneal at 750 °C for 30 min in a furnace. The evolution of these defects on increasing the annealing temperature up to 950 °C is presented. Good electrical activation and mobility values have been found for all the investigated temperatures.
Url:
DOI: 10.1016/0921-5107(89)90077-9
Affiliations:
Links toward previous steps (curation, corpus...)
- to stream Istex, to step Corpus: 000540
- to stream Istex, to step Curation: 000470
- to stream Istex, to step Checkpoint: 000C94
- to stream Main, to step Merge: 000D67
- to stream Main, to step Curation: 000D52
Le document en format XML
<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title>Depth profiles and damage annealing of 1.06 MeV As2+ Implanted in silicon</title><author><name sortKey="Armigliato, A" sort="Armigliato, A" uniqKey="Armigliato A" first="A." last="Armigliato">A. Armigliato</name></author><author><name sortKey="Nipoti, R" sort="Nipoti, R" uniqKey="Nipoti R" first="R." last="Nipoti">R. Nipoti</name></author><author><name sortKey="Bentini, G G" sort="Bentini, G G" uniqKey="Bentini G" first="G. G." last="Bentini">G. G. Bentini</name></author><author><name sortKey="Mazzone, A M" sort="Mazzone, A M" uniqKey="Mazzone A" first="A. M." last="Mazzone">A. M. Mazzone</name></author><author><name sortKey="Bianconi, M" sort="Bianconi, M" uniqKey="Bianconi M" first="M." last="Bianconi">M. Bianconi</name></author><author><name sortKey="Nylandsted Larsen, A" sort="Nylandsted Larsen, A" uniqKey="Nylandsted Larsen A" first="A." last="Nylandsted Larsen">A. Nylandsted Larsen</name></author><author><name sortKey="Gasparotto, A" sort="Gasparotto, A" uniqKey="Gasparotto A" first="A." last="Gasparotto">A. Gasparotto</name></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:B5E81A9EEC35064E043245583386C0EDBE94B1A4</idno><date when="1989" year="1989">1989</date><idno type="doi">10.1016/0921-5107(89)90077-9</idno><idno type="url">https://api.istex.fr/document/B5E81A9EEC35064E043245583386C0EDBE94B1A4/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">000540</idno><idno type="wicri:Area/Istex/Curation">000470</idno><idno type="wicri:Area/Istex/Checkpoint">000C94</idno><idno type="wicri:doubleKey">0921-5107:1989:Armigliato A:depth:profiles:and</idno><idno type="wicri:Area/Main/Merge">000D67</idno><idno type="wicri:Area/Main/Curation">000D52</idno><idno type="wicri:Area/Main/Exploration">000D23</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a">Depth profiles and damage annealing of 1.06 MeV As2+ Implanted in silicon</title><author><name sortKey="Armigliato, A" sort="Armigliato, A" uniqKey="Armigliato A" first="A." last="Armigliato">A. Armigliato</name><affiliation><wicri:noCountry code="subField">40126 Bologna Italy</wicri:noCountry></affiliation></author><author><name sortKey="Nipoti, R" sort="Nipoti, R" uniqKey="Nipoti R" first="R." last="Nipoti">R. Nipoti</name><affiliation><wicri:noCountry code="subField">40126 Bologna Italy</wicri:noCountry></affiliation></author><author><name sortKey="Bentini, G G" sort="Bentini, G G" uniqKey="Bentini G" first="G. G." last="Bentini">G. G. Bentini</name><affiliation><wicri:noCountry code="subField">40126 Bologna Italy</wicri:noCountry></affiliation></author><author><name sortKey="Mazzone, A M" sort="Mazzone, A M" uniqKey="Mazzone A" first="A. M." last="Mazzone">A. M. Mazzone</name><affiliation><wicri:noCountry code="subField">40126 Bologna Italy</wicri:noCountry></affiliation></author><author><name sortKey="Bianconi, M" sort="Bianconi, M" uniqKey="Bianconi M" first="M." last="Bianconi">M. Bianconi</name><affiliation><wicri:noCountry code="subField">40126 Bologna Italy</wicri:noCountry></affiliation></author><author><name sortKey="Nylandsted Larsen, A" sort="Nylandsted Larsen, A" uniqKey="Nylandsted Larsen A" first="A." last="Nylandsted Larsen">A. Nylandsted Larsen</name><affiliation><wicri:noCountry code="subField">DK 8000 Aarhus C Denmark</wicri:noCountry></affiliation></author><author><name sortKey="Gasparotto, A" sort="Gasparotto, A" uniqKey="Gasparotto A" first="A." last="Gasparotto">A. Gasparotto</name><affiliation><wicri:noCountry code="subField">35100 Padova Italy</wicri:noCountry></affiliation></author></analytic><monogr></monogr><series><title level="j">Materials Science & Engineering B</title><title level="j" type="abbrev">MSB</title><idno type="ISSN">0921-5107</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1988">1988</date><biblScope unit="volume">2</biblScope><biblScope unit="issue">1–3</biblScope><biblScope unit="page" from="63">63</biblScope><biblScope unit="page" to="67">67</biblScope></imprint><idno type="ISSN">0921-5107</idno></series><idno type="istex">B5E81A9EEC35064E043245583386C0EDBE94B1A4</idno><idno type="DOI">10.1016/0921-5107(89)90077-9</idno><idno type="PII">0921-5107(89)90077-9</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0921-5107</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Doubly charged arsenic ions have been implanted into crystalline Si〈100〉 at an energy of 1.06 MeV and with doses of 1.2 and 2.4 × 1015 cm−2. Both the chemical and the electrical profiles showed the presence of two peaks, which are attributed to channelling effects, as confirmed by Monte Carlo calculations. Corresponding to these peaks, two bands of lattice defects have been found by electron microscopy after an anneal at 750 °C for 30 min in a furnace. The evolution of these defects on increasing the annealing temperature up to 950 °C is presented. Good electrical activation and mobility values have been found for all the investigated temperatures.</div></front></TEI><affiliations><list></list><tree><noCountry><name sortKey="Armigliato, A" sort="Armigliato, A" uniqKey="Armigliato A" first="A." last="Armigliato">A. Armigliato</name><name sortKey="Bentini, G G" sort="Bentini, G G" uniqKey="Bentini G" first="G. G." last="Bentini">G. G. Bentini</name><name sortKey="Bianconi, M" sort="Bianconi, M" uniqKey="Bianconi M" first="M." last="Bianconi">M. Bianconi</name><name sortKey="Gasparotto, A" sort="Gasparotto, A" uniqKey="Gasparotto A" first="A." last="Gasparotto">A. Gasparotto</name><name sortKey="Mazzone, A M" sort="Mazzone, A M" uniqKey="Mazzone A" first="A. M." last="Mazzone">A. M. Mazzone</name><name sortKey="Nipoti, R" sort="Nipoti, R" uniqKey="Nipoti R" first="R." last="Nipoti">R. Nipoti</name><name sortKey="Nylandsted Larsen, A" sort="Nylandsted Larsen, A" uniqKey="Nylandsted Larsen A" first="A." last="Nylandsted Larsen">A. Nylandsted Larsen</name></noCountry></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Wicri/Musique/explor/MonteverdiV1/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000D23 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000D23 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= Wicri/Musique
|area= MonteverdiV1
|flux= Main
|étape= Exploration
|type= RBID
|clé= ISTEX:B5E81A9EEC35064E043245583386C0EDBE94B1A4
|texte= Depth profiles and damage annealing of 1.06 MeV As2+ Implanted in silicon
}}
| This area was generated with Dilib version V0.6.21. |  |