Device-width dependence of plateau width in quantum Hall states
Identifieur interne : 003935 ( Istex/Curation ); précédent : 003934; suivant : 003936Device-width dependence of plateau width in quantum Hall states
Auteurs : S. Kawaji [Japon] ; K. Hirakawa [Japon] ; M. Nagata [Japon]Source :
- Physica B: Physics of Condensed Matter [ 0921-4526 ] ; 1993.
Abstract
Hall bar type devices having a total length of 2900 μm, a source and drain electrode width of 400 μm and different widths w ranging from 10 to 120 μm in its central 600 μm long part are fabricated from a GaAs/AlGaAs wafer with electron mobility of 21 m2V−1s−1. The current at which the quantum Hall plateau for i=2 at B=9.7T at T=1.2K disappears is proportional to w. The average critical current density is Jcr=(1.6±0.2) A m−1
Url:
DOI: 10.1016/0921-4526(93)90313-U
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