Highlighting of two types of defects in 1300 nm PBC laser diodes
Identifieur interne : 000427 ( Istex/Corpus ); précédent : 000426; suivant : 000428Highlighting of two types of defects in 1300 nm PBC laser diodes
Auteurs : B. Bauduin ; J. Wallon ; D. Riviere ; J. Y. BoulaireSource :
- Quality and Reliability Engineering International [ 0748-8017 ] ; 1996-07.
English descriptors
- KwdEn :
Abstract
Laser diodes of PBC (p‐substrate buried crescent) structure and emitting at 1300 nm, were subjected to calibrated electrostatic discharges (ESD). A failure analysis was then set up using a scanning optical microscope (SOM) and has allowed the localization of the damaged zones. The comparison of the results obtained with the electro‐optical characteristics has highlighted two types of complementary defects: (i) a so‐called optical type defect, since the optical power is significantly reduced, although leakage current has not occurred (active layer seriously damaged); (ii) a so‐called electrical type defect, since the leakage current increases, although the optical power is barely reduced (active layer weakly damaged).
Url:
DOI: 10.1002/(SICI)1099-1638(199607)12:4<317::AID-QRE29>3.0.CO;2-B
Links to Exploration step
ISTEX:D6635E21CA0950CCB890930C00BB3AA1982177C6Le document en format XML
<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title xml:lang="en">Highlighting of two types of defects in 1300 nm PBC laser diodes</title><author><name sortKey="Bauduin, B" sort="Bauduin, B" uniqKey="Bauduin B" first="B." last="Bauduin">B. Bauduin</name><affiliation><mods:affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</mods:affiliation></affiliation></author><author><name sortKey="Wallon, J" sort="Wallon, J" uniqKey="Wallon J" first="J." last="Wallon">J. Wallon</name><affiliation><mods:affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</mods:affiliation></affiliation></author><author><name sortKey="Riviere, D" sort="Riviere, D" uniqKey="Riviere D" first="D." last="Riviere">D. Riviere</name><affiliation><mods:affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</mods:affiliation></affiliation></author><author><name sortKey="Boulaire, J Y" sort="Boulaire, J Y" uniqKey="Boulaire J" first="J. Y." last="Boulaire">J. Y. Boulaire</name><affiliation><mods:affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</mods:affiliation></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:D6635E21CA0950CCB890930C00BB3AA1982177C6</idno><date when="1996" year="1996">1996</date><idno type="doi">10.1002/(SICI)1099-1638(199607)12:4<317::AID-QRE29>3.0.CO;2-B</idno><idno type="url">https://api.istex.fr/document/D6635E21CA0950CCB890930C00BB3AA1982177C6/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">000427</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a" type="main" xml:lang="en">Highlighting of two types of defects in 1300 nm PBC laser diodes</title><author><name sortKey="Bauduin, B" sort="Bauduin, B" uniqKey="Bauduin B" first="B." last="Bauduin">B. Bauduin</name><affiliation><mods:affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</mods:affiliation></affiliation></author><author><name sortKey="Wallon, J" sort="Wallon, J" uniqKey="Wallon J" first="J." last="Wallon">J. Wallon</name><affiliation><mods:affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</mods:affiliation></affiliation></author><author><name sortKey="Riviere, D" sort="Riviere, D" uniqKey="Riviere D" first="D." last="Riviere">D. Riviere</name><affiliation><mods:affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</mods:affiliation></affiliation></author><author><name sortKey="Boulaire, J Y" sort="Boulaire, J Y" uniqKey="Boulaire J" first="J. Y." last="Boulaire">J. Y. Boulaire</name><affiliation><mods:affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</mods:affiliation></affiliation></author></analytic><monogr></monogr><series><title level="j">Quality and Reliability Engineering International</title><title level="j" type="abbrev">Qual. Reliab. Engng. Int.</title><idno type="ISSN">0748-8017</idno><idno type="eISSN">1099-1638</idno><imprint><publisher>Wiley Subscription Services, Inc., A Wiley Company</publisher><pubPlace>Chichester</pubPlace><date type="published" when="1996-07">1996-07</date><biblScope unit="volume">12</biblScope><biblScope unit="issue">4</biblScope><biblScope unit="page" from="317">317</biblScope><biblScope unit="page" to="320">320</biblScope></imprint><idno type="ISSN">0748-8017</idno></series><idno type="istex">D6635E21CA0950CCB890930C00BB3AA1982177C6</idno><idno type="DOI">10.1002/(SICI)1099-1638(199607)12:4<317::AID-QRE29>3.0.CO;2-B</idno><idno type="ArticleID">QRE4680120417</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0748-8017</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>OBIC</term><term>SOM</term><term>components</term><term>failure analysis</term><term>laser diodes</term><term>optoelectronic devices</term></keywords></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Laser diodes of PBC (p‐substrate buried crescent) structure and emitting at 1300 nm, were subjected to calibrated electrostatic discharges (ESD). A failure analysis was then set up using a scanning optical microscope (SOM) and has allowed the localization of the damaged zones. The comparison of the results obtained with the electro‐optical characteristics has highlighted two types of complementary defects: (i) a so‐called optical type defect, since the optical power is significantly reduced, although leakage current has not occurred (active layer seriously damaged); (ii) a so‐called electrical type defect, since the leakage current increases, although the optical power is barely reduced (active layer weakly damaged).</div></front></TEI><istex><corpusName>wiley</corpusName><author><json:item><name>B. Bauduin</name><affiliations><json:string>France Telecom CNET LAB/QFE, 22307 Lannion, France</json:string></affiliations></json:item><json:item><name>J. Wallon</name><affiliations><json:string>France Telecom CNET LAB/QFE, 22307 Lannion, France</json:string></affiliations></json:item><json:item><name>D. Riviere</name><affiliations><json:string>France Telecom CNET LAB/QFE, 22307 Lannion, France</json:string></affiliations></json:item><json:item><name>J. Y. Boulaire</name><affiliations><json:string>France Telecom CNET LAB/QFE, 22307 Lannion, France</json:string></affiliations></json:item></author><subject><json:item><lang><json:string>eng</json:string></lang><value>components</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>failure analysis</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>optoelectronic devices</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>laser diodes</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>SOM</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>OBIC</value></json:item></subject><articleId><json:string>QRE4680120417</json:string></articleId><language><json:string>eng</json:string></language><originalGenre><json:string>article</json:string></originalGenre><abstract>Laser diodes of PBC (p‐substrate buried crescent) structure and emitting at 1300 nm, were subjected to calibrated electrostatic discharges (ESD). A failure analysis was then set up using a scanning optical microscope (SOM) and has allowed the localization of the damaged zones. The comparison of the results obtained with the electro‐optical characteristics has highlighted two types of complementary defects: (i) a so‐called optical type defect, since the optical power is significantly reduced, although leakage current has not occurred (active layer seriously damaged); (ii) a so‐called electrical type defect, since the leakage current increases, although the optical power is barely reduced (active layer weakly damaged).</abstract><qualityIndicators><score>2.546</score><pdfVersion>1.3</pdfVersion><pdfPageSize>576 x 863.759 pts</pdfPageSize><refBibsNative>true</refBibsNative><keywordCount>6</keywordCount><abstractCharCount>726</abstractCharCount><pdfWordCount>1298</pdfWordCount><pdfCharCount>7500</pdfCharCount><pdfPageCount>4</pdfPageCount><abstractWordCount>104</abstractWordCount></qualityIndicators><title>Highlighting of two types of defects in 1300 nm PBC laser diodes</title><genre><json:string>article</json:string></genre><host><volume>12</volume><publisherId><json:string>QRE</json:string></publisherId><pages><total>4</total><last>320</last><first>317</first></pages><issn><json:string>0748-8017</json:string></issn><issue>4</issue><subject><json:item><value>Article</value></json:item></subject><genre><json:string>journal</json:string></genre><language><json:string>unknown</json:string></language><eissn><json:string>1099-1638</json:string></eissn><title>Quality and Reliability Engineering International</title><doi><json:string>10.1002/(ISSN)1099-1638</json:string></doi></host><publicationDate>1996</publicationDate><copyrightDate>1996</copyrightDate><doi><json:string>10.1002/(SICI)1099-1638(199607)12:4>317::AID-QRE29>3.0.CO;2-B</json:string></doi><id>D6635E21CA0950CCB890930C00BB3AA1982177C6</id><score>0.3954165</score><fulltext><json:item><original>true</original><mimetype>application/pdf</mimetype><extension>pdf</extension><uri>https://api.istex.fr/document/D6635E21CA0950CCB890930C00BB3AA1982177C6/fulltext/pdf</uri></json:item><json:item><original>false</original><mimetype>application/zip</mimetype><extension>zip</extension><uri>https://api.istex.fr/document/D6635E21CA0950CCB890930C00BB3AA1982177C6/fulltext/zip</uri></json:item><istex:fulltextTEI uri="https://api.istex.fr/document/D6635E21CA0950CCB890930C00BB3AA1982177C6/fulltext/tei"><teiHeader><fileDesc><titleStmt><title level="a" type="main" xml:lang="en">Highlighting of two types of defects in 1300 nm PBC laser diodes</title></titleStmt><publicationStmt><authority>ISTEX</authority><publisher>Wiley Subscription Services, Inc., A Wiley Company</publisher><pubPlace>Chichester</pubPlace><availability><p>Copyright © 1996 John Wiley & Sons, Ltd.</p></availability><date>1996</date></publicationStmt><sourceDesc><biblStruct type="inbook"><analytic><title level="a" type="main" xml:lang="en">Highlighting of two types of defects in 1300 nm PBC laser diodes</title><author xml:id="author-1"><persName><forename type="first">B.</forename><surname>Bauduin</surname></persName><note type="biography">Bernard Bauduin graduated in electronic engineering from ‘Ecole Spéciale de Mécanique et d'Electricité de Paris in 1967’. He received a postgraduate diploma in solid state physics in 1970. After working as a teacher at the universities of Le Havre and Caen, and at the French telecom technical Institute, since 1981 he has been in charge of failure and technological analysis on optoelectronic devices at the French National Research Centre on Telecommunication (CNET).</note><affiliation>Bernard Bauduin graduated in electronic engineering from ‘Ecole Spéciale de Mécanique et d'Electricité de Paris in 1967’. He received a postgraduate diploma in solid state physics in 1970. After working as a teacher at the universities of Le Havre and Caen, and at the French telecom technical Institute, since 1981 he has been in charge of failure and technological analysis on optoelectronic devices at the French National Research Centre on Telecommunication (CNET).</affiliation><affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</affiliation></author><author xml:id="author-2"><persName><forename type="first">J.</forename><surname>Wallon</surname></persName><note type="biography">Jacques Wallon was born in Le Havre, France on 20 June 1963. He received the Electronical Engineering Degree from ‘Ecole Nationale de l'Aviation Civile’ of Toulouse, France in 1988. He also received a postgraduate diploma in microelectronics from the University of Nantes, France. Since April 1993, he has been a Research Scientist at the French National Research Centre on Telecommunication (CNET) on the reliability of components, where he is also currently doing his Ph.D. He was involved in ESD studies of low‐cost 1·3 μm laser diodes. He will finish his Ph.D. about ‘reliability issues of 980 nm pump laser diodes’ in 1996.</note><affiliation>Jacques Wallon was born in Le Havre, France on 20 June 1963. He received the Electronical Engineering Degree from ‘Ecole Nationale de l'Aviation Civile’ of Toulouse, France in 1988. He also received a postgraduate diploma in microelectronics from the University of Nantes, France. Since April 1993, he has been a Research Scientist at the French National Research Centre on Telecommunication (CNET) on the reliability of components, where he is also currently doing his Ph.D. He was involved in ESD studies of low‐cost 1·3 μm laser diodes. He will finish his Ph.D. about ‘reliability issues of 980 nm pump laser diodes’ in 1996.</affiliation><affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</affiliation></author><author xml:id="author-3"><persName><forename type="first">D.</forename><surname>Riviere</surname></persName><note type="biography">Daniel Riviere passed an examination in 1972, following his secondary education, for a place on a training course at France Telecom. After this training he worked until 1975 in a field operations centre at France Telecom, Paris. He then transferred to CNET (National Telecommunications Research Centre, France Telecom) in Lannion. Here his work has involved testing component quality and reliability and since 1979 he has worked in the component analysis laboratory, where his work involves microscopic analysis.</note><affiliation>Daniel Riviere passed an examination in 1972, following his secondary education, for a place on a training course at France Telecom. After this training he worked until 1975 in a field operations centre at France Telecom, Paris. He then transferred to CNET (National Telecommunications Research Centre, France Telecom) in Lannion. Here his work has involved testing component quality and reliability and since 1979 he has worked in the component analysis laboratory, where his work involves microscopic analysis.</affiliation><affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</affiliation></author><author xml:id="author-4"><persName><forename type="first">J. Y.</forename><surname>Boulaire</surname></persName><note type="biography">Jean‐Yves Boulaire graduated in electronic engineering from ‘Institut National des Sciences Appliquées’ de Lyon in 1966, and received a Ph.D. from University of Lyon in 1969. Since 1970, he has worked at the French National Research Centre on Telecommunications (CNET) on the reliability of components. He is now the head of Failure and Technological Analysis in the Components Group.</note><affiliation>Jean‐Yves Boulaire graduated in electronic engineering from ‘Institut National des Sciences Appliquées’ de Lyon in 1966, and received a Ph.D. from University of Lyon in 1969. Since 1970, he has worked at the French National Research Centre on Telecommunications (CNET) on the reliability of components. He is now the head of Failure and Technological Analysis in the Components Group.</affiliation><affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</affiliation></author></analytic><monogr><title level="j">Quality and Reliability Engineering International</title><title level="j" type="abbrev">Qual. Reliab. Engng. Int.</title><idno type="pISSN">0748-8017</idno><idno type="eISSN">1099-1638</idno><idno type="DOI">10.1002/(ISSN)1099-1638</idno><imprint><publisher>Wiley Subscription Services, Inc., A Wiley Company</publisher><pubPlace>Chichester</pubPlace><date type="published" when="1996-07"></date><biblScope unit="volume">12</biblScope><biblScope unit="issue">4</biblScope><biblScope unit="page" from="317">317</biblScope><biblScope unit="page" to="320">320</biblScope></imprint></monogr><idno type="istex">D6635E21CA0950CCB890930C00BB3AA1982177C6</idno><idno type="DOI">10.1002/(SICI)1099-1638(199607)12:4<317::AID-QRE29>3.0.CO;2-B</idno><idno type="ArticleID">QRE4680120417</idno></biblStruct></sourceDesc></fileDesc><profileDesc><creation><date>1996</date></creation><langUsage><language ident="en">en</language></langUsage><abstract xml:lang="en"><p>Laser diodes of PBC (p‐substrate buried crescent) structure and emitting at 1300 nm, were subjected to calibrated electrostatic discharges (ESD). A failure analysis was then set up using a scanning optical microscope (SOM) and has allowed the localization of the damaged zones. The comparison of the results obtained with the electro‐optical characteristics has highlighted two types of complementary defects: (i) a so‐called optical type defect, since the optical power is significantly reduced, although leakage current has not occurred (active layer seriously damaged); (ii) a so‐called electrical type defect, since the leakage current increases, although the optical power is barely reduced (active layer weakly damaged).</p></abstract><textClass xml:lang="en"><keywords scheme="keyword"><list><head>keywords</head><item><term>components</term></item><item><term>failure analysis</term></item><item><term>optoelectronic devices</term></item><item><term>laser diodes</term></item><item><term>SOM</term></item><item><term>OBIC</term></item></list></keywords></textClass><textClass><keywords scheme="Journal Subject"><list><head>article-category</head><item><term>Article</term></item></list></keywords></textClass></profileDesc><revisionDesc><change when="1995-12">Received</change><change when="1996-07">Published</change></revisionDesc></teiHeader></istex:fulltextTEI><json:item><original>false</original><mimetype>text/plain</mimetype><extension>txt</extension><uri>https://api.istex.fr/document/D6635E21CA0950CCB890930C00BB3AA1982177C6/fulltext/txt</uri></json:item></fulltext><metadata><istex:metadataXml wicri:clean="Wiley, elements deleted: body"><istex:xmlDeclaration>version="1.0" encoding="UTF-8" standalone="yes"</istex:xmlDeclaration><istex:document><component version="2.0" type="serialArticle" xml:lang="en"><header><publicationMeta level="product"><publisherInfo><publisherName>Wiley Subscription Services, Inc., A Wiley Company</publisherName><publisherLoc>Chichester</publisherLoc></publisherInfo><doi registered="yes">10.1002/(ISSN)1099-1638</doi><issn type="print">0748-8017</issn><issn type="electronic">1099-1638</issn><idGroup><id type="product" value="QRE"></id></idGroup><titleGroup><title type="main" xml:lang="en" sort="QUALITY AND RELIABILITY ENGINEERING INTERNATIONAL">Quality and Reliability Engineering International</title><title type="short">Qual. Reliab. Engng. Int.</title></titleGroup></publicationMeta><publicationMeta level="part" position="40"><doi origin="wiley" registered="yes">10.1002/(SICI)1099-1638(199607)12:4<>1.0.CO;2-T</doi><numberingGroup><numbering type="journalVolume" number="12">12</numbering><numbering type="journalIssue">4</numbering></numberingGroup><coverDate startDate="1996-07">July/August 1996</coverDate></publicationMeta><publicationMeta level="unit" type="article" position="17" status="forIssue"><doi origin="wiley" registered="yes">10.1002/(SICI)1099-1638(199607)12:4<317::AID-QRE29>3.0.CO;2-B</doi><idGroup><id type="unit" value="QRE4680120417"></id></idGroup><countGroup><count type="pageTotal" number="4"></count></countGroup><titleGroup><title type="articleCategory">Article</title><title type="tocHeading1">Articles</title></titleGroup><copyright ownership="publisher">Copyright © 1996 John Wiley & Sons, Ltd.</copyright><eventGroup><event type="manuscriptReceived" date="1995-12"></event><event type="manuscriptRevised" date="1996-02"></event><event type="firstOnline" date="1998-12-04"></event><event type="publishedOnlineFinalForm" date="1998-12-04"></event><event type="xmlConverted" agent="Converter:JWSART34_TO_WML3G version:3.1.7 mode:FullText" date="2012-09-28"></event><event type="xmlConverted" agent="Converter:WILEY_ML3G_TO_WILEY_ML3GV2 version:4.0.1" date="2014-03-20"></event><event type="xmlConverted" agent="Converter:WML3G_To_WML3G version:4.1.7 mode:FullText,remove_FC" date="2014-11-03"></event></eventGroup><numberingGroup><numbering type="pageFirst">317</numbering><numbering type="pageLast">320</numbering></numberingGroup><linkGroup><link type="toTypesetVersion" href="file:QRE.QRE4680120417.pdf"></link></linkGroup></publicationMeta><contentMeta><countGroup><count type="figureTotal" number="11"></count><count type="tableTotal" number="0"></count><count type="referenceTotal" number="3"></count></countGroup><titleGroup><title type="main" xml:lang="en">Highlighting of two types of defects in 1300 nm PBC laser diodes</title><title type="short" xml:lang="en">HIGHLIGHTING OF TWO TYPES OF DEFECTS</title></titleGroup><creators><creator xml:id="au1" creatorRole="author" affiliationRef="#af1" noteRef="#fn1"><personName><givenNames>B.</givenNames><familyName>Bauduin</familyName></personName></creator><creator xml:id="au2" creatorRole="author" affiliationRef="#af1" noteRef="#fn2"><personName><givenNames>J.</givenNames><familyName>Wallon</familyName></personName></creator><creator xml:id="au3" creatorRole="author" affiliationRef="#af1" noteRef="#fn3"><personName><givenNames>D.</givenNames><familyName>Riviere</familyName></personName></creator><creator xml:id="au4" creatorRole="author" affiliationRef="#af1" noteRef="#fn4"><personName><givenNames>J. Y.</givenNames><familyName>Boulaire</familyName></personName></creator></creators><affiliationGroup><affiliation xml:id="af1" countryCode="FR" type="organization"><unparsedAffiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</unparsedAffiliation></affiliation></affiliationGroup><keywordGroup xml:lang="en" type="author"><keyword xml:id="kwd1">components</keyword><keyword xml:id="kwd2">failure analysis</keyword><keyword xml:id="kwd3">optoelectronic devices</keyword><keyword xml:id="kwd4">laser diodes</keyword><keyword xml:id="kwd5">SOM</keyword><keyword xml:id="kwd6">OBIC</keyword></keywordGroup><abstractGroup><abstract type="main" xml:lang="en"><title type="main">Abstract</title><p>Laser diodes of PBC (p‐substrate buried crescent) structure and emitting at 1300 nm, were subjected to calibrated electrostatic discharges (ESD). A failure analysis was then set up using a scanning optical microscope (SOM) and has allowed the localization of the damaged zones. The comparison of the results obtained with the electro‐optical characteristics has highlighted two types of complementary defects: (i) a so‐called optical type defect, since the optical power is significantly reduced, although leakage current has not occurred (active layer seriously damaged); (ii) a so‐called electrical type defect, since the leakage current increases, although the optical power is barely reduced (active layer weakly damaged).</p></abstract></abstractGroup></contentMeta><noteGroup><note xml:id="fn1"><p><b>Bernard Bauduin</b> graduated in electronic engineering from ‘Ecole Spéciale de Mécanique et d'Electricité de Paris in 1967’. He received a postgraduate diploma in solid state physics in 1970. After working as a teacher at the universities of Le Havre and Caen, and at the French telecom technical Institute, since 1981 he has been in charge of failure and technological analysis on optoelectronic devices at the French National Research Centre on Telecommunication (CNET).</p></note><note xml:id="fn2"><p><b>Jacques Wallon</b> was born in Le Havre, France on 20 June 1963. He received the Electronical Engineering Degree from ‘Ecole Nationale de l'Aviation Civile’ of Toulouse, France in 1988. He also received a postgraduate diploma in microelectronics from the University of Nantes, France. Since April 1993, he has been a Research Scientist at the French National Research Centre on Telecommunication (CNET) on the reliability of components, where he is also currently doing his Ph.D. He was involved in ESD studies of low‐cost 1·3 μm laser diodes. He will finish his Ph.D. about ‘reliability issues of 980 nm pump laser diodes’ in 1996.</p></note><note xml:id="fn3"><p><b>Daniel Riviere</b> passed an examination in 1972, following his secondary education, for a place on a training course at France Telecom. After this training he worked until 1975 in a field operations centre at France Telecom, Paris. He then transferred to CNET (National Telecommunications Research Centre, France Telecom) in Lannion. Here his work has involved testing component quality and reliability and since 1979 he has worked in the component analysis laboratory, where his work involves microscopic analysis.</p></note><note xml:id="fn4"><p><b>Jean‐Yves Boulaire</b> graduated in electronic engineering from ‘Institut National des Sciences Appliquées’ de Lyon in 1966, and received a Ph.D. from University of Lyon in 1969. Since 1970, he has worked at the French National Research Centre on Telecommunications (CNET) on the reliability of components. He is now the head of Failure and Technological Analysis in the Components Group.</p></note></noteGroup></header></component></istex:document></istex:metadataXml><mods version="3.6"><titleInfo lang="en"><title>Highlighting of two types of defects in 1300 nm PBC laser diodes</title></titleInfo><titleInfo type="abbreviated" lang="en"><title>HIGHLIGHTING OF TWO TYPES OF DEFECTS</title></titleInfo><titleInfo type="alternative" contentType="CDATA" lang="en"><title>Highlighting of two types of defects in 1300 nm PBC laser diodes</title></titleInfo><name type="personal"><namePart type="given">B.</namePart><namePart type="family">Bauduin</namePart><affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</affiliation><description>Bernard Bauduin graduated in electronic engineering from ‘Ecole Spéciale de Mécanique et d'Electricité de Paris in 1967’. He received a postgraduate diploma in solid state physics in 1970. After working as a teacher at the universities of Le Havre and Caen, and at the French telecom technical Institute, since 1981 he has been in charge of failure and technological analysis on optoelectronic devices at the French National Research Centre on Telecommunication (CNET).</description><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">J.</namePart><namePart type="family">Wallon</namePart><affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</affiliation><description>Jacques Wallon was born in Le Havre, France on 20 June 1963. He received the Electronical Engineering Degree from ‘Ecole Nationale de l'Aviation Civile’ of Toulouse, France in 1988. He also received a postgraduate diploma in microelectronics from the University of Nantes, France. Since April 1993, he has been a Research Scientist at the French National Research Centre on Telecommunication (CNET) on the reliability of components, where he is also currently doing his Ph.D. He was involved in ESD studies of low‐cost 1·3 μm laser diodes. He will finish his Ph.D. about ‘reliability issues of 980 nm pump laser diodes’ in 1996.</description><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">D.</namePart><namePart type="family">Riviere</namePart><affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</affiliation><description>Daniel Riviere passed an examination in 1972, following his secondary education, for a place on a training course at France Telecom. After this training he worked until 1975 in a field operations centre at France Telecom, Paris. He then transferred to CNET (National Telecommunications Research Centre, France Telecom) in Lannion. Here his work has involved testing component quality and reliability and since 1979 he has worked in the component analysis laboratory, where his work involves microscopic analysis.</description><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">J. Y.</namePart><namePart type="family">Boulaire</namePart><affiliation>France Telecom CNET LAB/QFE, 22307 Lannion, France</affiliation><description>Jean‐Yves Boulaire graduated in electronic engineering from ‘Institut National des Sciences Appliquées’ de Lyon in 1966, and received a Ph.D. from University of Lyon in 1969. Since 1970, he has worked at the French National Research Centre on Telecommunications (CNET) on the reliability of components. He is now the head of Failure and Technological Analysis in the Components Group.</description><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="article" displayLabel="article"></genre><originInfo><publisher>Wiley Subscription Services, Inc., A Wiley Company</publisher><place><placeTerm type="text">Chichester</placeTerm></place><dateIssued encoding="w3cdtf">1996-07</dateIssued><dateCaptured encoding="w3cdtf">1995-12</dateCaptured><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><language><languageTerm type="code" authority="rfc3066">en</languageTerm><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType><extent unit="figures">11</extent><extent unit="references">3</extent></physicalDescription><abstract lang="en">Laser diodes of PBC (p‐substrate buried crescent) structure and emitting at 1300 nm, were subjected to calibrated electrostatic discharges (ESD). A failure analysis was then set up using a scanning optical microscope (SOM) and has allowed the localization of the damaged zones. The comparison of the results obtained with the electro‐optical characteristics has highlighted two types of complementary defects: (i) a so‐called optical type defect, since the optical power is significantly reduced, although leakage current has not occurred (active layer seriously damaged); (ii) a so‐called electrical type defect, since the leakage current increases, although the optical power is barely reduced (active layer weakly damaged).</abstract><subject lang="en"><genre>keywords</genre><topic>components</topic><topic>failure analysis</topic><topic>optoelectronic devices</topic><topic>laser diodes</topic><topic>SOM</topic><topic>OBIC</topic></subject><relatedItem type="host"><titleInfo><title>Quality and Reliability Engineering International</title></titleInfo><titleInfo type="abbreviated"><title>Qual. Reliab. Engng. Int.</title></titleInfo><genre type="journal">journal</genre><subject><genre>article-category</genre><topic>Article</topic></subject><identifier type="ISSN">0748-8017</identifier><identifier type="eISSN">1099-1638</identifier><identifier type="DOI">10.1002/(ISSN)1099-1638</identifier><identifier type="PublisherID">QRE</identifier><part><date>1996</date><detail type="volume"><caption>vol.</caption><number>12</number></detail><detail type="issue"><caption>no.</caption><number>4</number></detail><extent unit="pages"><start>317</start><end>320</end><total>4</total></extent></part></relatedItem><identifier type="istex">D6635E21CA0950CCB890930C00BB3AA1982177C6</identifier><identifier type="DOI">10.1002/(SICI)1099-1638(199607)12:4<317::AID-QRE29>3.0.CO;2-B</identifier><identifier type="ArticleID">QRE4680120417</identifier><accessCondition type="use and reproduction" contentType="copyright">Copyright © 1996 John Wiley & Sons, Ltd.</accessCondition><recordInfo><recordContentSource>WILEY</recordContentSource><recordOrigin>Wiley Subscription Services, Inc., A Wiley Company</recordOrigin></recordInfo></mods></metadata><enrichments><json:item><type>multicat</type><uri>https://api.istex.fr/document/D6635E21CA0950CCB890930C00BB3AA1982177C6/enrichments/multicat</uri></json:item></enrichments><serie></serie></istex></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Wicri/France/explor/LeHavreV1/Data/Istex/Corpus
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000427 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Istex/Corpus/biblio.hfd -nk 000427 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= Wicri/France
|area= LeHavreV1
|flux= Istex
|étape= Corpus
|type= RBID
|clé= ISTEX:D6635E21CA0950CCB890930C00BB3AA1982177C6
|texte= Highlighting of two types of defects in 1300 nm PBC laser diodes
}}
| This area was generated with Dilib version V0.6.25. |  |