Silicium oxyde And NotS. Sauvage
List of bibliographic references
Number of relevant bibliographic references: 24.Ident. | Authors (with country if any) | Title |
---|---|---|
003753 | Vincent Reillon [France] ; Serge Berthier [France] ; Stephane Chenot [France] | Nanostructures produced by co-sputtering to study the optical properties of artistic middle-age nano-cermets: The lustres |
003826 | P. D. Szkutnik [France] ; A. Sgarlata [Italie] ; N. Motta [Australie] ; E. Placidi [Italie] ; I. Berbezier [France] ; A. Balzarotti [Italie] | Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces |
003B93 | A. A. Prokofiev [Russie] ; A. S. Moskalenko [Russie, Allemagne] ; I. N. Yassievich [Russie] | Theoretical modeling of excitation and de-excitation processes of Er in SiO2 with Si nanocrystals |
003C58 | Tadamasa Kimura [Japon] ; Katsuaki Masaki [Japon] ; Hideo Isshiki [Japon] | Study on crystalline properties of Er-Si-O compounds in relation to Er-related 1.54 μm photoluminescence and electrical properties |
003C93 | J. Potfajova [Allemagne] ; J. M. Sun [Allemagne] ; B. Schmidt [Allemagne] ; T. Dekorsy [Allemagne] ; W. Skorupa [Allemagne] ; M. Helm [Allemagne] | Silicon-on-insulator microcavity light emitting diodes with two Si/SiO2 Bragg reflectors |
003C99 | Maria Eloisa Castagna [Italie] ; Anna Muscara [Italie] ; Salvatore Leonardi [Italie] ; Salvatore Coffa [Italie] ; Liliana Caristia [Italie] ; Cristina Tringali [Italie] ; Simona Lorenti [Italie] | Si-based erbium-doped light-emitting devices |
003D75 | B. Salem [France] ; P. Noe [France] ; F. Mazen [France] ; V. Calvo [France] ; E. Hadji [France] | Photoluminescence from Er-doped silicon rich oxide thin films |
003E03 | A. Belarouci [France] ; F. Gourbilleau [France] ; R. Rizk [France] | Optical properties from SRSO/SiO2 multilayers in planar microcavities |
003E04 | D. Navarro-Urrios [Italie] ; M. Melchiorri [Italie] ; N. Daldosso [Italie] ; L. Pavesi [Italie] ; C. Garcia [Espagne] ; P. Pellegrino [Espagne] ; B. Garrido [Espagne] ; G. Pucker [Italie] ; F. Gourbilleau [France] ; R. Rizk [France] | Optical losses and gain in silicon-rich silica waveguides containing Er ions |
003E05 | N. Daldosso [Italie] ; M. Melchiorri [Italie] ; L. Pavesi [Italie] ; G. Pucker [Italie] ; F. Gourbilleau [France] ; S. Chausserie [France] ; Ali Belarouci [France] ; X. Portier [France] ; C. Dufour [France] | Optical losses and absorption cross-section of silicon nanocrystals |
003E37 | D. Breard [France] ; F. Gourbilleau [France] ; A. Belarouci [France] ; C. Dufour [France] ; R. Rizk [France] | Nd3+ photoluminescence study of Nd-doped Si-rich silica films obtained by reactive magnetron sputtering |
003F48 | G. Wora Adeola [France] ; H. Rinnert [France] ; P. Miska [France] ; M. Vergnat [France] | Influence of the SiO thickness on the photoluminescence properties of Er-doped SiO/SiO2 multilayers |
004075 | K. Dohnalovi [République tchèque] ; K. Kusova [République tchèque] ; I. Pelant [République tchèque] ; J. Valenta [République tchèque] ; P. Gilliot [France] ; M. Gallart [France] ; O. Cregut [France] ; J. L. Rehspringer [France] ; B. Hönerlage [France] | Emission properties of a distributed feedback laser cavity containing silicon nanocrystals |
004078 | A. W. Achtstein [Allemagne] ; H. Karl [Allemagne] ; B. Stritzker [Allemagne] | Electric-field-controlled photoluminescence of CdSe nanocrystal-doped SiO2 on Si |
004123 | Anna Muscara [Italie] ; Maria Eloisa Castagna [Italie] ; Salvatore Leonardi [Italie] ; Salvatore Coffa [Italie] ; Liliana Caristia [Italie] ; Simona Lorenti [Italie] | Design and electro-optical characterization of Si-based resonant cavity light emitting devices at 850nm |
004136 | J. Skov Jensen [Danemark] ; G. Franzo [Italie] ; T. P. Leervad Petersen [Danemark] ; R. Pereira [Danemark] ; J. Chevallier [Danemark] ; M. Christian Petersen [Danemark] ; B. Bech Nielsen [Danemark] ; A. Nylandsted Larsen [Danemark] | Coupling between Ge-nanocrystals and defects in SiO2 |
004165 | A. Nazarov [Ukraine, Allemagne] ; I. Osiyuk [Ukraine, Allemagne] ; I. Tyagulskii [Ukraine] ; V. Lysenko [Ukraine] ; S. Prucnal [Pologne] ; J. Sun [Allemagne] ; W. Skorupa [Allemagne] ; R. A. Yankov [Allemagne] | Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide |
004166 | O. Jambois [Espagne] ; A. Vila [Espagne] ; P. Pellegrino [Espagne] ; J. Carreras [Espagne] ; A. Pbrez-Rodriguez [Espagne] ; B. Garrido [Espagne] ; C. Bonafos [France] ; G. Benassayag [France] | Charge transport along luminescent oxide layers containing Si and SiC nanoparticles |
004169 | P. J. Evans [Australie] ; P. H. Mutin [France] ; G. Triani [Australie] ; K. E. Prince [Australie] ; J. R. Bartlett [Australie] | Characterisation of metal oxide films deposited by non-hydrolytic ALD |
004261 | A. Podhorodecki [Pologne] ; J. Misiewicz [Pologne] ; J. Wojcik [Canada] ; E. Irving [Canada] ; P. Mascher [Canada] | 1.54 μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD |
004468 | K. Luterova [République tchèque, France] ; M. Cazzanelli [Italie] ; J.-P. Likforman [France] ; D. Navarro [Italie] ; J. Valenta [République tchèque] ; T. Ostatnicky [France, République tchèque] ; K. Dohnalova [République tchèque, France] ; S. Cheylan [Australie] ; P. Gilliot [France] ; B. Hönerlage [France] ; L. Pavesi [Italie] ; I. Pelant [République tchèque] | Optical gain in nanocrystalline silicon: comparison of planar waveguide geometry with a non-waveguiding ensemble of nanocrystals |
004837 | Vincent Giordano [France] ; John G. Hartnett [Australie] ; Jerzy Krupka [Pologne] ; Yann Kersale [France] ; Pierre-Yves Bourgeois [France] ; Michael E. Tobar [Australie] | Whispering-gallery mode technique applied to the measurement of the dielectric properties of langasite between 4 K and 300 K |
005B86 | G. J. Pryde [Australie] ; M. J. Sellars [Australie] ; N. B. Manson [Australie] | Optical non-Bloch behaviour observed using an optical Carr-Purcell-Meiboom-Gill pulse sequence |
006440 | S. Cheylan [Australie] ; N. B. Manson [Australie] ; R. G. Elliman [Australie] | Dose dependence of room temperature photoluminescence from Si implanted SiO2 |
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