| Ident. | Authors (with country if any) | Title |
|---|
| 000580 |
Paul D. Topham [Royaume-Uni] ; Andrew Glidle [Royaume-Uni] ; Daniel T. W. Toolan [Royaume-Uni] ; Michael P. Weir [Australie] ; Maximillian W. A. Skoda [Royaume-Uni] ; Robert Barker [France] ; Jonathan R. Howse [Royaume-Uni] | The Relationship between Charge Density and Polyelectrolyte Brush Profile Using Simultaneous Neutron Reflectivity and In Situ Attenuated Total Internal Reflection FTIR |
| 000806 |
P. J. Martin [Australie] ; A. Bendavid [Australie] ; K.-H. Müller [Australie] ; L. K. Randeniya [Australie] | Mesoporous surfaces by phase separation of Al-Si thin films |
| 000862 |
Taryn Guinan [Australie] ; Cédric Godefroy [France] ; Nicole Lautredou [France] ; Stephanie Pace [Australie] ; Pierre-Emmanuel Milhiet [France] ; Nicolas Voelcker [Australie] ; Frédérique Cunin [France] | Interaction of Antibiotics with Lipid Vesicles on Thin Film Porous Silicon Using Reflectance Interferometric Fourier Transform Spectroscopy |
| 000980 |
S. Y. Lim [Australie] ; M. Forster [France] ; D. Macdonald [Australie] | Estimation of solidification interface shapes in a boron-phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging |
| 000A48 |
Maxime Forster [France, Australie] ; Bastien Dehestru [France] ; Antoine Thomas [France] ; Erwann Fourmond [France] ; Roland Einhaus [France] ; Andres Cuevas [Australie] ; Mustapha Lemiti [France] | Compensation engineering for uniform n-type silicon ingots |
| 000F97 |
B. A. Latella [Australie] ; M. Ignat [France, Chili] | Interface fracture surface energy of sol-gel bonded silicon wafers by three-point bending : Lead-free solder and packaging |
| 001407 |
Charles A. Geiger [Autriche] ; G. Diego Gatta [Italie] ; XIANYU XUE [Japon] ; Garry J. Mcintyre [France, Australie] | A neutron/X-ray diffraction, IR, and 1H/29Si NMR spectroscopic investigation of armenite: Behavior of extra framework Ca cations and H2O molecules in microporous silicates |
| 001572 |
Peter G. Strutton [Australie] ; Artur P. Palacz [États-Unis] ; Richard C. Dugdale [États-Unis] ; FEI CHAI [États-Unis] ; Al Marchi [États-Unis] ; Alex E. Parker [États-Unis] ; Victoria Hogue [États-Unis] ; Frances P. Wilkerson [États-Unis] | The impact of equatorial Pacific tropical instability waves on hydrography and nutrients: 2004-2005 |
| 001673 |
C. Xiong [Australie] ; Christelle Monat [Australie, France] ; Alex S. Clark [Australie, Royaume-Uni] ; Christian Grillet [Australie] ; Graham D. Marshall [Australie] ; M. J. Steel [Australie] ; JUNTAO LI [Royaume-Uni] ; Liam O'Faolain [Royaume-Uni] ; Thomas F. Krauss [Royaume-Uni] ; John G. Rarity [Royaume-Uni] ; Benjamin J. Eggleton [Australie] | Slow-light enhanced correlated photon pair generation in a silicon photonic crystal waveguide |
| 001773 |
Terry J. Frankcombe [Australie] ; Michael A. Collins [Australie] | Potential energy surfaces for gas-surface reactions |
| 001894 |
H. J. Lewerenz [Allemagne, États-Unis] ; K. Skorupska [Allemagne, Pologne] ; A. G. Munoz [Allemagne] ; T. Stempel [Allemagne] ; N. Nüsse [Allemagne] ; M. Lublow [Allemagne] ; T. Vo-Dinh [États-Unis] ; P. Kulesza [Pologne] | Micro- and nanotopographies for photoelectrochemical energy conversion. II: Photoelectrocatalysis - Classical and advanced systems |
| 001895 |
H. J. Lewerenz [Allemagne, États-Unis] | Micro- and nanotopographies for photoelectrochemical energy conversion. I: The photovoltaic mode |
| 001965 |
Alsayed Abdel Aal [Allemagne] ; Rihab Al-Salman [Allemagne] ; Mohammad Al-Zoubi [Allemagne] ; Natalia Borissenko [Allemagne] ; Frank Endres [Allemagne] ; Oliver Höfft [Allemagne] ; Alexandra Prowald [Allemagne] ; Sherif Zein El Abedin [Allemagne, Égypte] | Interfacial electrochemistry and electrodeposition from some ionic liquids: In situ scanning tunneling microscopy, plasma electrochemistry, selenium and macroporous materials |
| 001978 |
Tsu-Tsung Andrew Li [Australie] ; Simon Ruffell [Australie] ; Mario Tucci [Italie] ; Yves Mansoulie [France] ; Christian Samundsett [Australie] ; Simona De Iullis [Italie] ; Luca Serenelli [Italie] ; Andres Cuevas [Australie] | Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon |
| 001B28 |
Ludovic Dumee [Australie] ; Vincent Germain [France] ; Kallista Sears [Australie] ; Jürg Schütz [Australie] ; Niall Finn [Australie] ; Mikel Duke [Australie] ; Sophie Cerneaux [France] ; David Cornu [France] ; Stephen Gray [Australie] | Enhanced durability and hydrophobicity of carbon nanotube bucky paper membranes in membrane distillation |
| 001B74 |
M. L. F. Lerch [Australie] ; M. Petasecca [Australie] ; A. Cullen [Australie] ; A. Hamad [Australie] ; H. Requardt [France] ; E. Br Uer-Krisch [France] ; A. Bravin [France] ; V. L. Perevertaylo [Ukraine] ; A. B. Rosenfeld [Australie] | Dosimetry of intensive synchrotron microbeams |
| 001F95 |
Inna Karatchevtseva [Australie] ; Marion Astoux [France] ; David J. Cassidy [Australie] ; Patrick Yee [Australie] ; John R. Bartlett [Australie] ; Christopher S. Griffith [Australie] | Synthesis and Characterization of Functionalized Silica-Based Nanohybrid Materials for Oxyanions Adsorption |
| 002031 |
C. Jamois [France] ; C. Li [France] ; R. Orobtchouk [France] ; T. Benyattou [France] | Slow Bloch surface wave devices on porous silicon for sensing applications |
| 002114 |
Ö. Tüzün [France] ; Y. Qiu [Belgique] ; A. Slaoui [France] ; I. Gordon [Belgique] ; C. Maurice [France] ; S. Venkatachalam [Belgique] ; S. Chatterjee [France] ; G. Beaucarne [Belgique] ; J. Poortmans [Belgique] | Properties of n-type polycrystalline silicon solar cells formed by aluminium induced crystallization and CVD thickening |
| 002349 |
B. C. Johnson [Australie] ; P. Caradonna [Australie] ; D. J. Pyke [Australie] ; J. C. Mccallum [Australie] ; P. Gortmaker [Australie] | Hydrogen in amorphous Si and Ge during solid phase epitaxy |
| 002374 |
Z. Messaï [France, Algérie] ; Z. Ouennoughi [Algérie] ; T. Devers [France] ; T. Mouet [France, Algérie] ; V. Harel [France] ; K. Konstantinov [Australie] ; N. Bouguechal [Algérie] | Growth and characteristics of ZnO nano-aggregates electrodeposited onto p-Si(111) |
| 002515 |
B. C. Johnson [Australie] ; J. C. Mccallum [Australie] ; L. H. Willems Van Beveren [Australie] ; E. Gauja [Australie] | Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport |
| 002625 |
LINWEI YU [France] ; Benedict O'Donnell [France] ; Pierre-Jean Alet [France] ; Pere Roca I Cabarrocas [France] | All-in-situ fabrication and characterization of silicon nanowires on TCO/glass substrates for photovoltaic application |
| 002939 |
X. J. Hao [Australie] ; E.-C. Cho [Australie] ; G. Scardera [Australie] ; Y. S. Shen [Australie] ; E. Bellet-Amalric [France] ; D. Bellet [France] ; G. Conibeer [Australie] ; M. A. Green [Australie] | Phosphorus-doped silicon quantum dots for all-silicon quantum dot tandem solar cells |
| 002B66 |
X. J. Hao [Australie] ; E.-C. Cho [Australie] ; G. Scardera [Australie] ; E. Bellet-Amalric [France] ; D. Bellet [France] ; Y. S. Shen [Australie] ; S. Huang [Australie] ; Y. D. Huang [Australie] ; G. Conibeer [Australie] ; M. A. Green [Australie] | Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix |
| 002B84 |
J. Hoszowska [Suisse] ; A. S. Kheifets [Australie] ; M. Berset [Suisse] ; I. Bray [Australie] ; W. Cao [Suisse] ; J.-Cl. Dousse [Suisse] ; K. Fennane [Suisse] ; M. Kavcic [Slovénie] ; Y. Kayser [Suisse] ; J. Szlachetko [Suisse, France] ; M. Szlachetko [Suisse] | Double K-shell photoionization of low-Z atoms and He-like ions |
| 002E68 |
Guilhem Arrachart [Australie] ; Inna Karatchevtseva [Australie] ; David J. Cassidy [Australie] ; Gerry Triani [Australie] ; John R. Bartlett [Australie] ; Michel Wong Chi Man [France] | Synthesis and characterisation of carboxylate-terminated silica nanohybrid powders and thin films |
| 002F13 |
Gavin Conibeer [Australie] ; Martin Green [Australie] ; Eun-Chel Cho [Australie] ; Dirk König [Australie] ; Young-Hyun Cho [Australie] ; Thipwan Fangsuwannarak [Australie] ; Giuseppe Scardera [Australie] ; Edwin Pink [Australie] ; YIDAN HUANG [Australie] ; Tom Puzzer [Australie] ; SHUJUAN HUANG [Australie] ; DENGYUAN SONG [Australie] ; Chris Flynn [Australie] ; Sangwook Park [Australie] ; XIAOJING HAO [Australie] ; Daniel Mansfield [Australie] | Silicon quantum dot nanostructures for tandem photovoltaic cells |
| 002F29 |
G. J. Conibeer [Australie] ; C.-W. Jiang [Australie] ; D. König [Australie] ; S. Shrestha [Australie] ; T. Walsh [Australie] ; M. A. Green [Australie] | Selective energy contacts for hot carrier solar cells |
| 002F32 |
Mathieu Mongin [Australie] ; Ernesto Molina [Australie] ; Thomas W. Trull [Australie] | Seasonality and scale of the Kerguelen plateau phytoplankton bloom : A remote sensing and modeling analysis of the influence of natural iron fertilization in the Southern Ocean |
| 003163 |
Julie Mosseri [France] ; Bernard Queguiner [France] ; Leanne Armand [France] ; Véronique Cornet-Barthaux [France] | Impact of iron on silicon utilization by diatoms in the Southern Ocean : A case study of Si/N cycle decoupling in a naturally iron-enriched area |
| 003226 |
G. Scardera [Australie] ; E. Bellet-Amalric [Australie, France] ; D. Bellet [Australie, France] ; T. Puzzer [Australie] ; E. Pink [Australie] ; G. Conibeer [Australie] | Formation of a Si-Si3N4 nanocomposite from plasma enhanced chemical vapour deposition multilayer structures |
| 003319 |
A. Caillard [Australie] ; C. Charles [Australie] ; R. Boswell [Australie] ; A. Meige [Australie] ; P. Brault [France] | Deposition of platinum catalyst by plasma sputtering for fuel cells : 3D simulation and experiments |
| 003619 |
S. H. Ng [Australie] ; J. Wang [Australie] ; K. Konstantinov [Australie] ; D. Wexler [Australie] ; S. Y. Chew [Australie] ; Z. P. Guo [Australie] ; H. K. Liu [Australie] | Spray-pyrolyzed silicon/disordered carbon nanocomposites for lithium-ion battery anodes |
| 003765 |
Petr Janda [République tchèque] ; Jan Valenta [République tchèque] ; Jean-Luc Rehspringer [France] ; Rodrigue R. Mafouana [France] ; Jan Linnros [Suède] ; Robert G. Elliman [Australie] | Modified spontaneous emission of silicon nanocrystals embedded in artificial opals |
| 003770 |
G. Konstantinidis [Roumanie] ; D. Neculoiu [Grèce] ; A. Stayinidris [Roumanie] ; Z. Chatzopoulos [Roumanie] ; A. Muller [Grèce] ; K. Tsagaraki [Roumanie] ; D. Vasilache [Grèce] ; I. Petrini [Grèce] ; C. Buiculescu [Grèce] ; L. Bary [France] ; R. Plana [France] | Millimeter wave monolithic integrated receivers based on GaAs micromachining |
| 003B31 |
Z. Ikonic [Royaume-Uni] ; I. Lazic [Serbie, Pays-Bas] ; V. Milanovic [Serbie] ; R. W. Kelsall [Royaume-Uni] ; D. Indjin [Royaume-Uni] ; P. Harrison [Royaume-Uni] | n-Si/SiGe quantum cascade structures for THz emission |
| 003B93 |
A. A. Prokofiev [Russie] ; A. S. Moskalenko [Russie, Allemagne] ; I. N. Yassievich [Russie] | Theoretical modeling of excitation and de-excitation processes of Er in SiO2 with Si nanocrystals |
| 003C31 |
M. Kempa [France] ; B. Janousova [France, Allemagne] ; J. Saroun [France, République tchèque] ; P. Flores [France] ; M. Boehm [France] ; F. Demmel [France] ; J. Kulda [France] | The Flat Cone multianalyzer setup for ILL's three-axis spectrometers |
| 003C51 |
E. Guillermain [France] ; V. Lysenko [France] ; T. Benyattou [France] | Surface wave photonic device based on porous silicon multilayers |
| 003C52 |
K. R. Catchpole [Australie] ; S. Pillai [Australie] | Surface plasmons for enhanced silicon light-emitting diodes and solar cells |
| 003C56 |
F. Trojanek [République tchèque] ; K. Zidek [République tchèque] ; K. Neudert [République tchèque] ; I. Pelant [République tchèque] ; P. Maty [République tchèque] | Superlinear photoluminescence in silicon nanocrystals : The role of excitation wavelength |
| 003C59 |
D. Colombo [Italie] ; E. Grilli [Italie] ; M. Guzzi [Italie] ; S. Sanguinetti [Italie] ; A. Fedorov [Italie, Russie] ; H. Von K Nel [Italie] ; G. Isella [Italie] | Study of thermal strain relaxation in GaAs grown on Ge/Si substrates Study of thermal strain relaxation in GaAs grown on Ge/Si substrates |
| 003C63 |
I. Sychugov [Suède] ; J. Lu [Suède] ; N. Elfström [Suède] ; J. Linnros [Suède] | Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization |
| 003C69 |
M. Zhao [Suède] ; A. Karim [Suède] ; W.-X. Ni [Suède, Taïwan] ; C. R. Pidgeon [Royaume-Uni] ; P. J. Phillips [Royaume-Uni] ; D. Carder [Royaume-Uni] ; B. N. Murdin [Royaume-Uni] ; T. Fromherz [Autriche] ; D. J. Paul [Royaume-Uni] | Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering |
| 003C93 |
J. Potfajova [Allemagne] ; J. M. Sun [Allemagne] ; B. Schmidt [Allemagne] ; T. Dekorsy [Allemagne] ; W. Skorupa [Allemagne] ; M. Helm [Allemagne] | Silicon-on-insulator microcavity light emitting diodes with two Si/SiO2 Bragg reflectors |
| 003C94 |
Gavin Conibeer [Australie] ; Martin Green [Australie] ; Richard Corkish [Australie] ; Young Cho [Australie] ; Eun-Chel Cho [Corée du Sud] ; Chu-Wei Jiang [Australie] ; Thipwan Fangsuwannarak [Australie] ; Edwin Pink [Australie] ; YIDAN HUANG [Australie] ; Tom Puzzer [Australie] ; Thorsten Trupke [Australie] ; Bryce Richards [Australie] ; Avi Shalav [Australie] ; Kuo-Lung Lin [Australie] | Silicon nanostmctures for third generation photovoltaic solar cells |
| 003C96 |
S. G. Pavlov [Allemagne] ; H.-W. Hübers [Allemagne] ; J. N. Hovenier [Pays-Bas] ; T. O. Klaassen [Pays-Bas] ; H. Riemann [Allemagne] ; N. V. Abrosimov [Allemagne] ; N. Nötzel [Allemagne] ; R. Kh. Zhukavin [Russie] ; V. N. Shastin [Russie] | Silicon donor and Stokes terahertz lasers |
| 003C97 |
X. Li [France] ; P. Boucaud [France] ; X. Checoury [France] ; M. El Kurdi [France] ; S. David [France] ; S. Sauvage [France] ; N. Yam [France] ; F. Fossard [France] ; D. Bouchier [France] ; J. M. Fedeli [France] ; V. Calvo [France] ; E. Hadji [France] ; A. Salomon [France] | Si-based two-dimensional photonic crystals coupled to one-dimensional Bragg mirrors |
| 003C98 |
Lorenzo Colace [Italie] ; Michele Balbi [Italie] ; Gianlorenzo Masini [Italie] ; Gaetano Assanto [Italie] ; Hsin-Chiao Luan [États-Unis] ; Lionel C. Kimerling [États-Unis] | Si-based near infrared photodetectors operating at 10Gbit/s |
| 003D67 |
L. Mangolini [États-Unis] ; D. Jurbergs [États-Unis] ; E. Rogojina [États-Unis] ; U. Kortshagen [États-Unis] | Plasma synthesis and liquid-phase surface passivation of brightly luminescent Si nanocrystals |
| 003D68 |
Maria M. Giangregorio [Italie] ; Maria Losurdo [Italie] ; Alberto Sacchetti [Italie] ; Pio Capezzuto [Italie] ; Giovanni Bruno [Italie] | Plasma processing of the Si(00 1) surface for tuning SPR of Au/Si-based plasmonic nanostructures |
| 003D74 |
B. M. Monroy [Mexique] ; G. Santana [Mexique] ; J. Aguilar-Hernandez [Mexique] ; A. Benami [Mexique] ; J. Fandino [Mexique] ; A. Ponce [Mexique] ; G. Contreras-Puente [Mexique] ; A. Ortiz [Mexique] ; J. C. Alonso [Mexique] | Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition |
| 003D76 |
A. Arbouet [France] ; M. Carrada [France] ; F. Demangeot [France] ; V. Paillard [France] ; G. Benassayag [France] ; C. Bonafos [France] ; A. Claverie [France] ; S. Schamm [France] ; C. Dumas [France] ; J. Grisolia [France] ; M. A. F. Van Den Boogaart [Suisse] ; J. Brugger [Suisse] ; L. Doeswijk [Suisse] | Photoluminescence characterization of few-nanocrystals electronic devices |
| 003E02 |
A. Najar [France, Tunisie] ; J. Charrier [France] ; H. Ajlani [Tunisie] ; N. Lorrain [France] ; H. Elhouichet [Tunisie] ; M. Oueslati [Tunisie] ; L. Haji [France] | Optical properties of erbium-doped porous silicon waveguides |
| 003E82 |
C. Garcia [Espagne] ; P. Pellegrino [Espagne] ; Y. Lebour [Espagne] ; B. Garrido [Espagne] ; F. Gourbilleau [France] ; R. Rizk [France] | Maximum fraction of Er3+ ions optically pumped through Si nanoclusters |
| 003F24 |
J. P. Morniroli [France] ; R. K. W. Marceau [Australie] ; S. P. Ringer [Australie] ; L. Boulanger [France] | LACBED characterization of dislocation loops |
| 003F41 |
A. Meldrum [Canada] ; A. Hryciw [Canada] ; A. N. Macdonald [Canada] ; C. Blois [Canada] ; T. Clement [Canada] ; R. Decorby [Canada] ; J. Wang [Hong Kong] ; QUAN LI [Hong Kong] | Interaction between rare-earth ions and amorphous silicon nanoclusters produced at low processing temperatures |
| 003F51 |
A. Fonseca [Portugal] ; N. A. Sobolev [Portugal] ; J. P. Leitao [Portugal] ; E. Alves [Portugal] ; M. C. Carmo [Portugal] ; N. D. Zakharov [Allemagne] ; P. Werner [Allemagne] ; A. A. Tonkikh [Russie] ; G. E. Cirlin [Russie] | Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice |
| 003F73 |
N. Sfina [Tunisie] ; J.-L. Lazzari [France] ; P. Christol [France] ; Y. Cuminal [France] ; M. Said [Tunisie] | I induced electrostatic confinement of electron gas in W-designed strain-compensated Si/Si1- xGex/Si type-II quantum wells |
| 003F84 |
Axel Straub [Australie] ; Daniel Inns [Australie] ; Mason L. Terry [Australie] ; YIDAN HUANG [Australie] ; Per I. Widenborg [Australie] ; Armin G. Aberle [Australie] | Homoepitaxial silicon growth in a non-ultra-high vacuum environment by ion-assisted deposition on Si wafer and seeded glass substrates |
| 003F89 |
Delphine Marris-Morini [France] ; Xavier Le Roux [France] ; Daniel Pascal [France] ; Laurent Vivien [France] ; Eric Cassan [France] ; Jean Marc Fedeli [France] ; Jean Francois Damlencourt [France] ; David Bouville [France] ; José Palomo [France] ; Suzanne Laval [France] | High speed all-silicon optical modulator |
| 004054 |
S. Dabboussi [Tunisie] ; H. Elhouichet [Tunisie] ; H. Ajlani [Tunisie] ; A. Moadhen [Tunisie] ; M. Oueslati [Tunisie] ; J. A. Roger [France] | Excitation process and photoluminescence properties of Tb3+and Eu3+ ions in SnO2 and in SnO2 : Porous silicon hosts |
| 004075 |
K. Dohnalovi [République tchèque] ; K. Kusova [République tchèque] ; I. Pelant [République tchèque] ; J. Valenta [République tchèque] ; P. Gilliot [France] ; M. Gallart [France] ; O. Cregut [France] ; J. L. Rehspringer [France] ; B. Hönerlage [France] | Emission properties of a distributed feedback laser cavity containing silicon nanocrystals |
| 004077 |
E. V. Astrova [Russie] ; T. S. Perova [Irlande (pays)] ; Yu. A. Zharova [Russie] ; S. A. Grudinkin [Russie, Irlande (pays)] ; V. A. Tolmachev [Russie, Irlande (pays)] ; V. A. Melnikov [Irlande (pays)] | Electro-tunable one-dimensional photonic crystal structures based on grooved silicon infiltrated with liquid crystal |
| 004101 |
Federico Iori [Italie] ; Elena Degoli [Italie] ; Eleonora Luppi [Italie] ; Rita Magri [Italie] ; Ivan Marri [Italie] ; G. Cantele [Italie] ; D. Ninno [Italie] ; F. Trani [Italie] ; Stefano Ossicini [Italie] | Doping in silicon nanocrystals : An ab initio study of the structural, electronic and optical properties |
| 004122 |
M. Casalino [Italie] ; L. Sirleto [Italie] ; L. Moretti [Italie] ; F. Della Corte [Italie] ; I. Rendina [Italie] | Design of a silicon RCE schottky photodetector working at 1.55 μm |
| 004126 |
J. Bak-Misiuk [Pologne] ; A. Misiuk [Pologne] ; P. Romanowski [Pologne] ; A. Wnuk [Pologne] ; J. Trela [Pologne] | Defect-related light emission from processed He-implanted silicon |
| 004145 |
E. Xifre-Perez [Espagne] ; L. F. Marsal [Espagne] ; J. Ferre-Borrull [Espagne] ; J. Pallares [Espagne] | Confinement in a planar waveguide with porous silicon omnidirectional mirrors as confining walls |
| 004261 |
A. Podhorodecki [Pologne] ; J. Misiewicz [Pologne] ; J. Wojcik [Canada] ; E. Irving [Canada] ; P. Mascher [Canada] | 1.54 μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD |
| 004413 |
D. Cardinal [Belgique] ; L. Y. Alleman [Belgique, France] ; F. Dehairs [Belgique] ; N. Savoye [Belgique] ; T. W. Trull [Australie] ; L. Andre [Belgique] | Relevance of silicon isotopes to Si-nutrient utilization and Si-source assessment in Antarctic waters |
| 004453 |
T. Ostatnicky [République tchèque, France] ; J. Valenta [République tchèque] ; I. Pelant [République tchèque] ; K. Luterova [République tchèque] ; R. G. Elliman [Australie] ; S. Cheylan [Espagne] ; B. Hönerlage [France] | Photoluminescence from an active planar optical waveguide made of silicon nanocrystals: dominance of leaky substrate modes in dissipative structures |
| 004536 |
J. S. Williams [Australie] ; S. O. Kucheyev [Australie] ; H. H. Tan [Australie] ; J. Wong-Leung [Australie] ; C. Jagadish [Australie] | Ion irradiation-induced disordering of semiconductors: defect structures and applications |
| 004A90 |
R. Payling [Suisse, Australie] ; T. Nelis [Suisse] ; M. Aeberhard [Suisse] ; J. Michler [Suisse] ; P. Seris [France] | Layer model approach to background correction in r.f.-GDOES |
| 004E20 |
Lars Oberbeck [Australie] ; Toby Hallam [Australie] ; Neil J. Curson [Australie] ; Michelle Y. Simmons [Australie] ; Robert G. Clark [Australie] | STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computer |
| 004F37 |
M.-O. Ruault [France] ; M. C. Ridgway [Australie] ; F. Fortuna [France] ; H. Bernas [France] ; J. S. Williams [Australie] | In-situ microscopy study of nanocavity shrinkage in Si under ion beam irradiation |
| 005826 |
Junichi Tashiro [Japon] ; Tetsuya Morishita [Japon] ; Shuichi Nose [Japon] | Influence of k-point sampling on stability of structures obtained by ab initio MD simulations |
| 005E03 |
A. Bermak [Australie] ; A. Bouzerdoum [Australie] ; K. Eshraghian [Australie] ; J. L. Noullet [France] | A CMOS circuit for high speed flexible read-out of CMOS imagers |
| 006390 |
SANWU WANG [Australie] ; M. W. Radny [Australie] ; P. V. Smith [Australie] | Hydrogen chemisorption on the Si(1 1 1)√3 x √30°-Al, -Ga, -B surfaces : An ab initio HF/DFT molecular orbital modelling using atomic clusters |
| 006430 |
M. Maazouz [France] ; L. Guillemot [France] ; V. A. Esaulov [France] ; D. J. O'Connor [Australie] | Electron capture and loss in the scattering of hydrogen and oxygen ions on a Si surface |
| 006655 |
S. P. Swenser [Australie] ; Y.-B. Cheng [Australie] | Phase evolution during the nitridation of silicon with a clay additive |
| 006C26 |
D. G. Li [Australie] ; N. S. Mcalpine ; D. Haneman | Progression of cleavage in Si, Ge, and GaAs |
| 006E05 |
| ECO 4 : micro-optics II, 14-15 March 1991, The Hague |
