| Ident. | Authors (with country if any) | Title |
|---|
| 000806 |
P. J. Martin [Australie] ; A. Bendavid [Australie] ; K.-H. Müller [Australie] ; L. K. Randeniya [Australie] | Mesoporous surfaces by phase separation of Al-Si thin films |
| 000980 |
S. Y. Lim [Australie] ; M. Forster [France] ; D. Macdonald [Australie] | Estimation of solidification interface shapes in a boron-phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging |
| 001407 |
Charles A. Geiger [Autriche] ; G. Diego Gatta [Italie] ; XIANYU XUE [Japon] ; Garry J. Mcintyre [France, Australie] | A neutron/X-ray diffraction, IR, and 1H/29Si NMR spectroscopic investigation of armenite: Behavior of extra framework Ca cations and H2O molecules in microporous silicates |
| 002031 |
C. Jamois [France] ; C. Li [France] ; R. Orobtchouk [France] ; T. Benyattou [France] | Slow Bloch surface wave devices on porous silicon for sensing applications |
| 002349 |
B. C. Johnson [Australie] ; P. Caradonna [Australie] ; D. J. Pyke [Australie] ; J. C. Mccallum [Australie] ; P. Gortmaker [Australie] | Hydrogen in amorphous Si and Ge during solid phase epitaxy |
| 002515 |
B. C. Johnson [Australie] ; J. C. Mccallum [Australie] ; L. H. Willems Van Beveren [Australie] ; E. Gauja [Australie] | Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport |
| 002B66 |
X. J. Hao [Australie] ; E.-C. Cho [Australie] ; G. Scardera [Australie] ; E. Bellet-Amalric [France] ; D. Bellet [France] ; Y. S. Shen [Australie] ; S. Huang [Australie] ; Y. D. Huang [Australie] ; G. Conibeer [Australie] ; M. A. Green [Australie] | Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix |
| 002B84 |
J. Hoszowska [Suisse] ; A. S. Kheifets [Australie] ; M. Berset [Suisse] ; I. Bray [Australie] ; W. Cao [Suisse] ; J.-Cl. Dousse [Suisse] ; K. Fennane [Suisse] ; M. Kavcic [Slovénie] ; Y. Kayser [Suisse] ; J. Szlachetko [Suisse, France] ; M. Szlachetko [Suisse] | Double K-shell photoionization of low-Z atoms and He-like ions |
| 002E68 |
Guilhem Arrachart [Australie] ; Inna Karatchevtseva [Australie] ; David J. Cassidy [Australie] ; Gerry Triani [Australie] ; John R. Bartlett [Australie] ; Michel Wong Chi Man [France] | Synthesis and characterisation of carboxylate-terminated silica nanohybrid powders and thin films |
| 002F13 |
Gavin Conibeer [Australie] ; Martin Green [Australie] ; Eun-Chel Cho [Australie] ; Dirk König [Australie] ; Young-Hyun Cho [Australie] ; Thipwan Fangsuwannarak [Australie] ; Giuseppe Scardera [Australie] ; Edwin Pink [Australie] ; YIDAN HUANG [Australie] ; Tom Puzzer [Australie] ; SHUJUAN HUANG [Australie] ; DENGYUAN SONG [Australie] ; Chris Flynn [Australie] ; Sangwook Park [Australie] ; XIAOJING HAO [Australie] ; Daniel Mansfield [Australie] | Silicon quantum dot nanostructures for tandem photovoltaic cells |
| 002F29 |
G. J. Conibeer [Australie] ; C.-W. Jiang [Australie] ; D. König [Australie] ; S. Shrestha [Australie] ; T. Walsh [Australie] ; M. A. Green [Australie] | Selective energy contacts for hot carrier solar cells |
| 003226 |
G. Scardera [Australie] ; E. Bellet-Amalric [Australie, France] ; D. Bellet [Australie, France] ; T. Puzzer [Australie] ; E. Pink [Australie] ; G. Conibeer [Australie] | Formation of a Si-Si3N4 nanocomposite from plasma enhanced chemical vapour deposition multilayer structures |
| 003765 |
Petr Janda [République tchèque] ; Jan Valenta [République tchèque] ; Jean-Luc Rehspringer [France] ; Rodrigue R. Mafouana [France] ; Jan Linnros [Suède] ; Robert G. Elliman [Australie] | Modified spontaneous emission of silicon nanocrystals embedded in artificial opals |
| 003770 |
G. Konstantinidis [Roumanie] ; D. Neculoiu [Grèce] ; A. Stayinidris [Roumanie] ; Z. Chatzopoulos [Roumanie] ; A. Muller [Grèce] ; K. Tsagaraki [Roumanie] ; D. Vasilache [Grèce] ; I. Petrini [Grèce] ; C. Buiculescu [Grèce] ; L. Bary [France] ; R. Plana [France] | Millimeter wave monolithic integrated receivers based on GaAs micromachining |
| 003826 |
P. D. Szkutnik [France] ; A. Sgarlata [Italie] ; N. Motta [Australie] ; E. Placidi [Italie] ; I. Berbezier [France] ; A. Balzarotti [Italie] | Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces |
| 003854 |
M. Puech [France] ; J. M. Thevenoud [France] ; N. Launay [France] ; N. Amal [France] ; P. Godinat [France] ; B. Andrieu [France] ; J. M. Gruffat [France] | High Productivity DRIE solutions for 3D-SiP and MEMS volume manufacturing |
| 003974 |
Ayesha J. Haq [Australie] ; P. R. Munroe [Australie] ; M. Hoffman [Australie] ; P. J. Martin [Australie] ; A. Bendavid [Australie] | Deformation behaviour of DLC coatings on (111) silicon substrates |
| 003B31 |
Z. Ikonic [Royaume-Uni] ; I. Lazic [Serbie, Pays-Bas] ; V. Milanovic [Serbie] ; R. W. Kelsall [Royaume-Uni] ; D. Indjin [Royaume-Uni] ; P. Harrison [Royaume-Uni] | n-Si/SiGe quantum cascade structures for THz emission |
| 003B93 |
A. A. Prokofiev [Russie] ; A. S. Moskalenko [Russie, Allemagne] ; I. N. Yassievich [Russie] | Theoretical modeling of excitation and de-excitation processes of Er in SiO2 with Si nanocrystals |
| 003C10 |
M. Miritello [Italie] ; R. Lo Savio [Italie] ; F. Iacona [Italie] ; G. Franzo [Italie] ; C. Bongiorno [Italie] ; A. Irrera [Italie] ; F. Priolo [Italie] | The influence of substrate on the properties of Er2O3 films grown by magnetron sputtering |
| 003C51 |
E. Guillermain [France] ; V. Lysenko [France] ; T. Benyattou [France] | Surface wave photonic device based on porous silicon multilayers |
| 003C52 |
K. R. Catchpole [Australie] ; S. Pillai [Australie] | Surface plasmons for enhanced silicon light-emitting diodes and solar cells |
| 003C56 |
F. Trojanek [République tchèque] ; K. Zidek [République tchèque] ; K. Neudert [République tchèque] ; I. Pelant [République tchèque] ; P. Maty [République tchèque] | Superlinear photoluminescence in silicon nanocrystals : The role of excitation wavelength |
| 003C59 |
D. Colombo [Italie] ; E. Grilli [Italie] ; M. Guzzi [Italie] ; S. Sanguinetti [Italie] ; A. Fedorov [Italie, Russie] ; H. Von K Nel [Italie] ; G. Isella [Italie] | Study of thermal strain relaxation in GaAs grown on Ge/Si substrates Study of thermal strain relaxation in GaAs grown on Ge/Si substrates |
| 003C63 |
I. Sychugov [Suède] ; J. Lu [Suède] ; N. Elfström [Suède] ; J. Linnros [Suède] | Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization |
| 003C69 |
M. Zhao [Suède] ; A. Karim [Suède] ; W.-X. Ni [Suède, Taïwan] ; C. R. Pidgeon [Royaume-Uni] ; P. J. Phillips [Royaume-Uni] ; D. Carder [Royaume-Uni] ; B. N. Murdin [Royaume-Uni] ; T. Fromherz [Autriche] ; D. J. Paul [Royaume-Uni] | Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering |
| 003C93 |
J. Potfajova [Allemagne] ; J. M. Sun [Allemagne] ; B. Schmidt [Allemagne] ; T. Dekorsy [Allemagne] ; W. Skorupa [Allemagne] ; M. Helm [Allemagne] | Silicon-on-insulator microcavity light emitting diodes with two Si/SiO2 Bragg reflectors |
| 003C94 |
Gavin Conibeer [Australie] ; Martin Green [Australie] ; Richard Corkish [Australie] ; Young Cho [Australie] ; Eun-Chel Cho [Corée du Sud] ; Chu-Wei Jiang [Australie] ; Thipwan Fangsuwannarak [Australie] ; Edwin Pink [Australie] ; YIDAN HUANG [Australie] ; Tom Puzzer [Australie] ; Thorsten Trupke [Australie] ; Bryce Richards [Australie] ; Avi Shalav [Australie] ; Kuo-Lung Lin [Australie] | Silicon nanostmctures for third generation photovoltaic solar cells |
| 003C95 |
P. Janda [République tchèque] ; J. Valenta [République tchèque] ; T. Ostatnicky [République tchèque] ; E. Skopalova [République tchèque] ; I. Pelant [République tchèque] ; R. G. Elliman [Australie] ; R. Tomasiunas [Lituanie] | Silicon nanocrystals in silica-Novel active waveguides for nanophotonics |
| 003C98 |
Lorenzo Colace [Italie] ; Michele Balbi [Italie] ; Gianlorenzo Masini [Italie] ; Gaetano Assanto [Italie] ; Hsin-Chiao Luan [États-Unis] ; Lionel C. Kimerling [États-Unis] | Si-based near infrared photodetectors operating at 10Gbit/s |
| 003D67 |
L. Mangolini [États-Unis] ; D. Jurbergs [États-Unis] ; E. Rogojina [États-Unis] ; U. Kortshagen [États-Unis] | Plasma synthesis and liquid-phase surface passivation of brightly luminescent Si nanocrystals |
| 003D74 |
B. M. Monroy [Mexique] ; G. Santana [Mexique] ; J. Aguilar-Hernandez [Mexique] ; A. Benami [Mexique] ; J. Fandino [Mexique] ; A. Ponce [Mexique] ; G. Contreras-Puente [Mexique] ; A. Ortiz [Mexique] ; J. C. Alonso [Mexique] | Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition |
| 003D76 |
A. Arbouet [France] ; M. Carrada [France] ; F. Demangeot [France] ; V. Paillard [France] ; G. Benassayag [France] ; C. Bonafos [France] ; A. Claverie [France] ; S. Schamm [France] ; C. Dumas [France] ; J. Grisolia [France] ; M. A. F. Van Den Boogaart [Suisse] ; J. Brugger [Suisse] ; L. Doeswijk [Suisse] | Photoluminescence characterization of few-nanocrystals electronic devices |
| 003E02 |
A. Najar [France, Tunisie] ; J. Charrier [France] ; H. Ajlani [Tunisie] ; N. Lorrain [France] ; H. Elhouichet [Tunisie] ; M. Oueslati [Tunisie] ; L. Haji [France] | Optical properties of erbium-doped porous silicon waveguides |
| 003E03 |
A. Belarouci [France] ; F. Gourbilleau [France] ; R. Rizk [France] | Optical properties from SRSO/SiO2 multilayers in planar microcavities |
| 003E05 |
N. Daldosso [Italie] ; M. Melchiorri [Italie] ; L. Pavesi [Italie] ; G. Pucker [Italie] ; F. Gourbilleau [France] ; S. Chausserie [France] ; Ali Belarouci [France] ; X. Portier [France] ; C. Dufour [France] | Optical losses and absorption cross-section of silicon nanocrystals |
| 003E37 |
D. Breard [France] ; F. Gourbilleau [France] ; A. Belarouci [France] ; C. Dufour [France] ; R. Rizk [France] | Nd3+ photoluminescence study of Nd-doped Si-rich silica films obtained by reactive magnetron sputtering |
| 003E82 |
C. Garcia [Espagne] ; P. Pellegrino [Espagne] ; Y. Lebour [Espagne] ; B. Garrido [Espagne] ; F. Gourbilleau [France] ; R. Rizk [France] | Maximum fraction of Er3+ ions optically pumped through Si nanoclusters |
| 003F24 |
J. P. Morniroli [France] ; R. K. W. Marceau [Australie] ; S. P. Ringer [Australie] ; L. Boulanger [France] | LACBED characterization of dislocation loops |
| 003F40 |
Hideki Yokoi [Japon] | Interferometric optical isolator with Si guiding layer fabricated by wafer bonding |
| 003F41 |
A. Meldrum [Canada] ; A. Hryciw [Canada] ; A. N. Macdonald [Canada] ; C. Blois [Canada] ; T. Clement [Canada] ; R. Decorby [Canada] ; J. Wang [Hong Kong] ; QUAN LI [Hong Kong] | Interaction between rare-earth ions and amorphous silicon nanoclusters produced at low processing temperatures |
| 003F51 |
A. Fonseca [Portugal] ; N. A. Sobolev [Portugal] ; J. P. Leitao [Portugal] ; E. Alves [Portugal] ; M. C. Carmo [Portugal] ; N. D. Zakharov [Allemagne] ; P. Werner [Allemagne] ; A. A. Tonkikh [Russie] ; G. E. Cirlin [Russie] | Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice |
| 003F73 |
N. Sfina [Tunisie] ; J.-L. Lazzari [France] ; P. Christol [France] ; Y. Cuminal [France] ; M. Said [Tunisie] | I induced electrostatic confinement of electron gas in W-designed strain-compensated Si/Si1- xGex/Si type-II quantum wells |
| 003F84 |
Axel Straub [Australie] ; Daniel Inns [Australie] ; Mason L. Terry [Australie] ; YIDAN HUANG [Australie] ; Per I. Widenborg [Australie] ; Armin G. Aberle [Australie] | Homoepitaxial silicon growth in a non-ultra-high vacuum environment by ion-assisted deposition on Si wafer and seeded glass substrates |
| 003F89 |
Delphine Marris-Morini [France] ; Xavier Le Roux [France] ; Daniel Pascal [France] ; Laurent Vivien [France] ; Eric Cassan [France] ; Jean Marc Fedeli [France] ; Jean Francois Damlencourt [France] ; David Bouville [France] ; José Palomo [France] ; Suzanne Laval [France] | High speed all-silicon optical modulator |
| 004042 |
Armin G. Aberle [Australie] | Fabrication and characterisation of crystalline silicon thin-film materials for solar cells |
| 004069 |
J. Stradal [Pays-Bas, Australie] ; G. Scholma [Pays-Bas] ; H. Li [Pays-Bas] ; C. H. M. Van Der Werf [Pays-Bas] ; J. K. Rath [Pays-Bas] ; P. I. Widenborg [Australie] ; P. Campbell [Australie] ; A. G. Aberle [Australie] ; R. E. I. Schropp [Pays-Bas] | Epitaxial thickening by hot wire chemical vapor deposition of polycrystalline silicon seed layers on glass |
| 004075 |
K. Dohnalovi [République tchèque] ; K. Kusova [République tchèque] ; I. Pelant [République tchèque] ; J. Valenta [République tchèque] ; P. Gilliot [France] ; M. Gallart [France] ; O. Cregut [France] ; J. L. Rehspringer [France] ; B. Hönerlage [France] | Emission properties of a distributed feedback laser cavity containing silicon nanocrystals |
| 004077 |
E. V. Astrova [Russie] ; T. S. Perova [Irlande (pays)] ; Yu. A. Zharova [Russie] ; S. A. Grudinkin [Russie, Irlande (pays)] ; V. A. Tolmachev [Russie, Irlande (pays)] ; V. A. Melnikov [Irlande (pays)] | Electro-tunable one-dimensional photonic crystal structures based on grooved silicon infiltrated with liquid crystal |
| 004101 |
Federico Iori [Italie] ; Elena Degoli [Italie] ; Eleonora Luppi [Italie] ; Rita Magri [Italie] ; Ivan Marri [Italie] ; G. Cantele [Italie] ; D. Ninno [Italie] ; F. Trani [Italie] ; Stefano Ossicini [Italie] | Doping in silicon nanocrystals : An ab initio study of the structural, electronic and optical properties |
| 004122 |
M. Casalino [Italie] ; L. Sirleto [Italie] ; L. Moretti [Italie] ; F. Della Corte [Italie] ; I. Rendina [Italie] | Design of a silicon RCE schottky photodetector working at 1.55 μm |
| 004123 |
Anna Muscara [Italie] ; Maria Eloisa Castagna [Italie] ; Salvatore Leonardi [Italie] ; Salvatore Coffa [Italie] ; Liliana Caristia [Italie] ; Simona Lorenti [Italie] | Design and electro-optical characterization of Si-based resonant cavity light emitting devices at 850nm |
| 004126 |
J. Bak-Misiuk [Pologne] ; A. Misiuk [Pologne] ; P. Romanowski [Pologne] ; A. Wnuk [Pologne] ; J. Trela [Pologne] | Defect-related light emission from processed He-implanted silicon |
| 004145 |
E. Xifre-Perez [Espagne] ; L. F. Marsal [Espagne] ; J. Ferre-Borrull [Espagne] ; J. Pallares [Espagne] | Confinement in a planar waveguide with porous silicon omnidirectional mirrors as confining walls |
| 004165 |
A. Nazarov [Ukraine, Allemagne] ; I. Osiyuk [Ukraine, Allemagne] ; I. Tyagulskii [Ukraine] ; V. Lysenko [Ukraine] ; S. Prucnal [Pologne] ; J. Sun [Allemagne] ; W. Skorupa [Allemagne] ; R. A. Yankov [Allemagne] | Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide |
| 004A90 |
R. Payling [Suisse, Australie] ; T. Nelis [Suisse] ; M. Aeberhard [Suisse] ; J. Michler [Suisse] ; P. Seris [France] | Layer model approach to background correction in r.f.-GDOES |
| 004E20 |
Lars Oberbeck [Australie] ; Toby Hallam [Australie] ; Neil J. Curson [Australie] ; Michelle Y. Simmons [Australie] ; Robert G. Clark [Australie] | STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computer |
| 004F37 |
M.-O. Ruault [France] ; M. C. Ridgway [Australie] ; F. Fortuna [France] ; H. Bernas [France] ; J. S. Williams [Australie] | In-situ microscopy study of nanocavity shrinkage in Si under ion beam irradiation |
| 005471 |
Florence Boulc'H [France] ; Laurent Dessemond [France] ; Elisabeth Djurado [France] | Dopant size effect on structural and transport properties of nanometric and single-phased TZP |
| 006390 |
SANWU WANG [Australie] ; M. W. Radny [Australie] ; P. V. Smith [Australie] | Hydrogen chemisorption on the Si(1 1 1)√3 x √30°-Al, -Ga, -B surfaces : An ab initio HF/DFT molecular orbital modelling using atomic clusters |
| 006430 |
M. Maazouz [France] ; L. Guillemot [France] ; V. A. Esaulov [France] ; D. J. O'Connor [Australie] | Electron capture and loss in the scattering of hydrogen and oxygen ions on a Si surface |
