Piégeage porteur charge And NotW. Stolz

List of bibliographic references

Number of relevant bibliographic references: 6.

Ident.	Authors (with country if any)	Title
001289	Tracey M. Clarke [Australie] ; Jeff Peet [États-Unis] ; Andrew Nattestad [Australie] ; Nicolas Drolet [États-Unis] ; Gilles Dennler [France] ; Christoph Lungenschmied [États-Unis] ; Mario Leclerc [Canada] ; Attila J. Mozer [Australie]	Charge carrier mobility, bimolecular recombination and trapping in polycarbazole copolymer:fullerene (PCDTBT:PCBM) bulk heterojunction solar cells
002515	B. C. Johnson [Australie] ; J. C. Mccallum [Australie] ; L. H. Willems Van Beveren [Australie] ; E. Gauja [Australie]	Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
002B32	M. Lancry [France, Australie] ; N. Groothoff ; S. Guizard ; W. Yang ; B. Poumellec [France] ; P. G. Kazansky ; J. Canning	Femtosecond laser direct processing in wet and dry silica glass
004165	A. Nazarov [Ukraine, Allemagne] ; I. Osiyuk [Ukraine, Allemagne] ; I. Tyagulskii [Ukraine] ; V. Lysenko [Ukraine] ; S. Prucnal [Pologne] ; J. Sun [Allemagne] ; W. Skorupa [Allemagne] ; R. A. Yankov [Allemagne]	Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide
004639	N. Stojadinovic [République tchèque] ; I. Manic [République tchèque] ; V. Davidovic [République tchèque] ; D. Dankovic [République tchèque] ; S. Djoric-Veljkovic [République tchèque] ; S. Golubovic [République tchèque] ; S. Dimitrijev [Australie]	Effects of electrical stressing in power VDMOSFETs
006279	R. B. Miller [France, Australie] ; T. Baron [France] ; R. T. Cox [France] ; K. Saminadayar [France]	Relative absorption strengths of neutral and negatively charged excitons in CdTe quantum wells

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