Piégeage porteur charge And NotJeff Peet
List of bibliographic references
Number of relevant bibliographic references: 6.Ident. | Authors (with country if any) | Title |
---|---|---|
002515 | B. C. Johnson [Australie] ; J. C. Mccallum [Australie] ; L. H. Willems Van Beveren [Australie] ; E. Gauja [Australie] | Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport |
002B32 | M. Lancry [France, Australie] ; N. Groothoff ; S. Guizard ; W. Yang ; B. Poumellec [France] ; P. G. Kazansky ; J. Canning | Femtosecond laser direct processing in wet and dry silica glass |
003F03 | B. Kunert [Allemagne] ; K. Volz [Allemagne] ; I. Nemeth [Allemagne] ; W. Stolz [Allemagne] | Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system |
004165 | A. Nazarov [Ukraine, Allemagne] ; I. Osiyuk [Ukraine, Allemagne] ; I. Tyagulskii [Ukraine] ; V. Lysenko [Ukraine] ; S. Prucnal [Pologne] ; J. Sun [Allemagne] ; W. Skorupa [Allemagne] ; R. A. Yankov [Allemagne] | Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide |
004639 | N. Stojadinovic [République tchèque] ; I. Manic [République tchèque] ; V. Davidovic [République tchèque] ; D. Dankovic [République tchèque] ; S. Djoric-Veljkovic [République tchèque] ; S. Golubovic [République tchèque] ; S. Dimitrijev [Australie] | Effects of electrical stressing in power VDMOSFETs |
006279 | R. B. Miller [France, Australie] ; T. Baron [France] ; R. T. Cox [France] ; K. Saminadayar [France] | Relative absorption strengths of neutral and negatively charged excitons in CdTe quantum wells |
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