Germanium And NotJ. C. Mccallum

List of bibliographic references

Number of relevant bibliographic references: 7.

Ident.	Authors (with country if any)	Title
001965	Alsayed Abdel Aal [Allemagne] ; Rihab Al-Salman [Allemagne] ; Mohammad Al-Zoubi [Allemagne] ; Natalia Borissenko [Allemagne] ; Frank Endres [Allemagne] ; Oliver Höfft [Allemagne] ; Alexandra Prowald [Allemagne] ; Sherif Zein El Abedin [Allemagne, Égypte]	Interfacial electrochemistry and electrodeposition from some ionic liquids: In situ scanning tunneling microscopy, plasma electrochemistry, selenium and macroporous materials
003771	Kay Schuster [Allemagne] ; Jens Kobelke [Allemagne] ; Stephan Grimm [Allemagne] ; Anka Schwuchow [Allemagne] ; Johannes Kirchhof [Allemagne] ; Hartmut Bartelt [Allemagne] ; Andreas Gebhardt [Allemagne] ; Philippe Leproux [France] ; Vincent Couderc [France] ; Waclaw Urbanczyk [Pologne]	Microstructured fibers with highly nonlinear materials
003826	P. D. Szkutnik [France] ; A. Sgarlata [Italie] ; N. Motta [Australie] ; E. Placidi [Italie] ; I. Berbezier [France] ; A. Balzarotti [Italie]	Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces
003C59	D. Colombo [Italie] ; E. Grilli [Italie] ; M. Guzzi [Italie] ; S. Sanguinetti [Italie] ; A. Fedorov [Italie, Russie] ; H. Von K Nel [Italie] ; G. Isella [Italie]	Study of thermal strain relaxation in GaAs grown on Ge/Si substrates Study of thermal strain relaxation in GaAs grown on Ge/Si substrates
003C98	Lorenzo Colace [Italie] ; Michele Balbi [Italie] ; Gianlorenzo Masini [Italie] ; Gaetano Assanto [Italie] ; Hsin-Chiao Luan [États-Unis] ; Lionel C. Kimerling [États-Unis]	Si-based near infrared photodetectors operating at 10Gbit/s
003F51	A. Fonseca [Portugal] ; N. A. Sobolev [Portugal] ; J. P. Leitao [Portugal] ; E. Alves [Portugal] ; M. C. Carmo [Portugal] ; N. D. Zakharov [Allemagne] ; P. Werner [Allemagne] ; A. A. Tonkikh [Russie] ; G. E. Cirlin [Russie]	Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice
006C26	D. G. Li [Australie] ; N. S. Mcalpine ; D. Haneman	Progression of cleavage in Si, Ge, and GaAs

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