Bande valence And NotJ. Albert
List of bibliographic references
Number of relevant bibliographic references: 4.| Ident. | Authors (with country if any) | Title |
|---|---|---|
| 002594 | A. S. Gudovskikh [Russie] ; J. P. Kleider [France] ; N. A. Kalyuzhnyy [Russie] ; V. M. Lantratov [Russie] ; S. A. Mintairov [Russie] | Band structure at heterojunction interfaces of GaInP solar cells |
| 003F73 | N. Sfina [Tunisie] ; J.-L. Lazzari [France] ; P. Christol [France] ; Y. Cuminal [France] ; M. Said [Tunisie] | I induced electrostatic confinement of electron gas in W-designed strain-compensated Si/Si1- xGex/Si type-II quantum wells |
| 004639 | N. Stojadinovic [République tchèque] ; I. Manic [République tchèque] ; V. Davidovic [République tchèque] ; D. Dankovic [République tchèque] ; S. Djoric-Veljkovic [République tchèque] ; S. Golubovic [République tchèque] ; S. Dimitrijev [Australie] | Effects of electrical stressing in power VDMOSFETs |
| 006E26 | Y. Q. Cai [Australie] ; J. D. Riley ; R. C. G. Leckey ; B. Usher ; J. Fraxedas ; L. Ley [France] | Photoemission study of the electronic structure of a (GaAs)2/(AlAs)2 superlattice |
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