Synthesis and characterization of Sr3TaGa3Si2O14 single crystals
Identifieur interne : 001322 ( Istex/Corpus ); précédent : 001321; suivant : 001323Synthesis and characterization of Sr3TaGa3Si2O14 single crystals
Auteurs : H. Takeda ; J. Sato ; T. Kato ; K. Kawasaki ; H. Morikoshi ; K. Shimamura ; T. FukudaSource :
- Materials Research Bulletin [ 0025-5408 ] ; 2000.
English descriptors
- KwdEn :
- A. Oxides, Anisotropic, B. Crystal growth, Belokoneva, C. X-ray diffraction, Chemical composition, Crystal growth, Crystal structure, Czochralski technique, D. Crystal structure, D. Piezoelectricity, Decahedral, Decahedral site, Elsevier science, Fukuda, Inorg chem, Interatomic distances, Materials research, Materials research bulletin, Modulus, Octahedral, Octahedral site, Octahedral sites, Piezoelectric, Piezoelectric modulus, Piezoelectric properties, Proc ieee, Same site, Shimamura, Single crystal, Single crystals, Stgs, Structure analysis, Takeda, Tetrahedral, Tetrahedral sites, Tohoku university.
- Teeft :
- Anisotropic, Belokoneva, Chemical composition, Crystal growth, Crystal structure, Czochralski technique, Decahedral, Decahedral site, Elsevier science, Fukuda, Inorg chem, Interatomic distances, Materials research, Materials research bulletin, Modulus, Octahedral, Octahedral site, Octahedral sites, Piezoelectric, Piezoelectric modulus, Piezoelectric properties, Proc ieee, Same site, Shimamura, Single crystal, Single crystals, Stgs, Structure analysis, Takeda, Tetrahedral, Tetrahedral sites, Tohoku university.
Abstract
Abstract: New piezoelectric Sr3TaGa3Si2O14 (STGS) single crystals were grown using the Czochralski technique. The crystal structure of STGS is isostructural to that of Ca3Ga2Ge4O14, which has the trigonal space group P321 and Z = 1. The lattice parameters were a = 8.293(2) and c = 5.078(2) Å. The final R-factors were R = 0.047 and Rw = 0.046 for 1406 unique reflections. The distribution of each cation was found to be ordered in each site. Some piezoelectric properties of STGS are reported.
Url:
DOI: 10.1016/S0025-5408(00)00201-4
Links to Exploration step
ISTEX:E85ED8AF829D410732702D4887F3B8664486A333Le document en format XML
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Takeda</name><affiliation><mods:affiliation>E-mail: hiro-t@ms.aist-nara.ac.jp</mods:affiliation></affiliation><affiliation><mods:affiliation>Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan</mods:affiliation></affiliation></author><author><name sortKey="Sato, J" sort="Sato, J" uniqKey="Sato J" first="J" last="Sato">J. Sato</name><affiliation><mods:affiliation>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</mods:affiliation></affiliation></author><author><name sortKey="Kato, T" sort="Kato, T" uniqKey="Kato T" first="T" last="Kato">T. Kato</name><affiliation><mods:affiliation>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</mods:affiliation></affiliation></author><author><name sortKey="Kawasaki, K" sort="Kawasaki, K" uniqKey="Kawasaki K" first="K" last="Kawasaki">K. Kawasaki</name><affiliation><mods:affiliation>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</mods:affiliation></affiliation></author><author><name sortKey="Morikoshi, H" sort="Morikoshi, H" uniqKey="Morikoshi H" first="H" last="Morikoshi">H. Morikoshi</name><affiliation><mods:affiliation>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</mods:affiliation></affiliation></author><author><name sortKey="Shimamura, K" sort="Shimamura, K" uniqKey="Shimamura K" first="K" last="Shimamura">K. Shimamura</name><affiliation><mods:affiliation>Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan</mods:affiliation></affiliation></author><author><name sortKey="Fukuda, T" sort="Fukuda, T" uniqKey="Fukuda T" first="T" last="Fukuda">T. Fukuda</name><affiliation><mods:affiliation>Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan</mods:affiliation></affiliation></author></analytic><monogr></monogr><series><title level="j">Materials Research Bulletin</title><title level="j" type="abbrev">MRB</title><idno type="ISSN">0025-5408</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="2000">2000</date><biblScope unit="volume">35</biblScope><biblScope unit="issue">2</biblScope><biblScope unit="page" from="245">245</biblScope><biblScope unit="page" to="252">252</biblScope></imprint><idno type="ISSN">0025-5408</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0025-5408</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>A. Oxides</term><term>Anisotropic</term><term>B. Crystal growth</term><term>Belokoneva</term><term>C. X-ray diffraction</term><term>Chemical composition</term><term>Crystal growth</term><term>Crystal structure</term><term>Czochralski technique</term><term>D. Crystal structure</term><term>D. 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The crystal structure of STGS is isostructural to that of Ca3Ga2Ge4O14, which has the trigonal space group P321 and Z = 1. The lattice parameters were a = 8.293(2) and c = 5.078(2) Å. The final R-factors were R = 0.047 and Rw = 0.046 for 1406 unique reflections. The distribution of each cation was found to be ordered in each site. Some piezoelectric properties of STGS are reported.</div></front></TEI><istex><corpusName>elsevier</corpusName><keywords><teeft><json:string>stgs</json:string><json:string>takeda</json:string><json:string>fukuda</json:string><json:string>piezoelectric properties</json:string><json:string>materials research bulletin</json:string><json:string>shimamura</json:string><json:string>crystal structure</json:string><json:string>modulus</json:string><json:string>crystal growth</json:string><json:string>belokoneva</json:string><json:string>tetrahedral</json:string><json:string>octahedral</json:string><json:string>decahedral</json:string><json:string>decahedral site</json:string><json:string>anisotropic</json:string><json:string>piezoelectric modulus</json:string><json:string>single crystals</json:string><json:string>structure analysis</json:string><json:string>piezoelectric</json:string><json:string>elsevier science</json:string><json:string>czochralski technique</json:string><json:string>inorg chem</json:string><json:string>octahedral site</json:string><json:string>chemical composition</json:string><json:string>tetrahedral sites</json:string><json:string>octahedral sites</json:string><json:string>same site</json:string><json:string>materials research</json:string><json:string>proc ieee</json:string><json:string>tohoku university</json:string><json:string>interatomic distances</json:string><json:string>single crystal</json:string></teeft></keywords><author><json:item><name>H Takeda</name><affiliations><json:string>E-mail: hiro-t@ms.aist-nara.ac.jp</json:string><json:string>Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan</json:string></affiliations></json:item><json:item><name>J Sato</name><affiliations><json:string>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</json:string></affiliations></json:item><json:item><name>T Kato</name><affiliations><json:string>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</json:string></affiliations></json:item><json:item><name>K Kawasaki</name><affiliations><json:string>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</json:string></affiliations></json:item><json:item><name>H Morikoshi</name><affiliations><json:string>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</json:string></affiliations></json:item><json:item><name>K Shimamura</name><affiliations><json:string>Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan</json:string></affiliations></json:item><json:item><name>T Fukuda</name><affiliations><json:string>Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan</json:string></affiliations></json:item></author><subject><json:item><lang><json:string>eng</json:string></lang><value>A. Oxides</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>B. Crystal growth</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>C. X-ray diffraction</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>D. Crystal structure</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>D. Piezoelectricity</value></json:item></subject><language><json:string>eng</json:string></language><originalGenre><json:string>Full-length article</json:string></originalGenre><abstract>New piezoelectric Sr3TaGa3Si2O14 (STGS) single crystals were grown using the Czochralski technique. The crystal structure of STGS is isostructural to that of Ca3Ga2Ge4O14, which has the trigonal space group P321 and Z = 1. The lattice parameters were a = 8.293(2) and c = 5.078(2) Å. The final R-factors were R = 0.047 and Rw = 0.046 for 1406 unique reflections. The distribution of each cation was found to be ordered in each site. Some piezoelectric properties of STGS are reported.</abstract><qualityIndicators><score>3.026</score><pdfVersion>1.2</pdfVersion><pdfPageSize>488 x 722 pts</pdfPageSize><refBibsNative>true</refBibsNative><keywordCount>5</keywordCount><abstractCharCount>484</abstractCharCount><pdfWordCount>2054</pdfWordCount><pdfCharCount>13457</pdfCharCount><pdfPageCount>8</pdfPageCount><abstractWordCount>81</abstractWordCount></qualityIndicators><title>Synthesis and characterization of Sr3TaGa3Si2O14 single crystals</title><pii><json:string>S0025-5408(00)00201-4</json:string></pii><genre><json:string>research-article</json:string></genre><host><title>Materials Research Bulletin</title><language><json:string>unknown</json:string></language><publicationDate>2000</publicationDate><issn><json:string>0025-5408</json:string></issn><pii><json:string>S0025-5408(00)X0060-8</json:string></pii><volume>35</volume><issue>2</issue><pages><first>245</first><last>252</last></pages><genre><json:string>journal</json:string></genre></host><categories><wos><json:string>science</json:string><json:string>materials science, multidisciplinary</json:string></wos><scienceMetrix><json:string>applied sciences</json:string><json:string>enabling & strategic technologies</json:string><json:string>materials</json:string></scienceMetrix><inist><json:string>sciences appliquees, technologies et medecines</json:string><json:string>sciences biologiques et medicales</json:string><json:string>sciences biologiques fondamentales et appliquees. psychologie</json:string><json:string>vertebres: endocrinologie</json:string></inist></categories><publicationDate>2000</publicationDate><copyrightDate>2000</copyrightDate><doi><json:string>10.1016/S0025-5408(00)00201-4</json:string></doi><id>E85ED8AF829D410732702D4887F3B8664486A333</id><score>1</score><fulltext><json:item><extension>pdf</extension><original>true</original><mimetype>application/pdf</mimetype><uri>https://api.istex.fr/document/E85ED8AF829D410732702D4887F3B8664486A333/fulltext/pdf</uri></json:item><json:item><extension>zip</extension><original>false</original><mimetype>application/zip</mimetype><uri>https://api.istex.fr/document/E85ED8AF829D410732702D4887F3B8664486A333/fulltext/zip</uri></json:item><istex:fulltextTEI uri="https://api.istex.fr/document/E85ED8AF829D410732702D4887F3B8664486A333/fulltext/tei"><teiHeader><fileDesc><titleStmt><title level="a" type="main" xml:lang="en">Synthesis and characterization of Sr3TaGa3Si2O14 single crystals</title></titleStmt><publicationStmt><authority>ISTEX</authority><publisher>ELSEVIER</publisher><availability><p>©2000 Elsevier Science Inc.</p></availability><date>2000</date></publicationStmt><notesStmt><note>Refereed</note><note type="content">Fig. 1: Projections of the Sr3TaGa3Si4O14 structure along the [010] direction (a) and normal to the [001] direction (b).</note><note type="content">Fig. 2: An ORTEP [10] drawing of part of the Sr3TaGa3Si4O14 structure. The thermal ellipsoids enclose an 80% probability distribution.</note><note type="content">Table 1: Composition (wt%) of Sr3TaGa3Si2O14 crystal measured by ICP-ES analysis</note><note type="content">Table 2: Crystal data and intensity collection for Sr3TaGa3Si2O14</note><note type="content">Table 3: Positional and anisotropic thermal parameters for Sr3TaGa3Si2O14</note><note type="content">Table 4: Selected Interatomic Distances (Å) for Sr3TaGa3Si2O14</note><note type="content">Table 5: Some piezoelectric characteristics of Sr3TaGa3O14 single crystal</note></notesStmt><sourceDesc><biblStruct type="inbook"><analytic><title level="a" type="main" xml:lang="en">Synthesis and characterization of Sr3TaGa3Si2O14 single crystals</title><author xml:id="author-0000"><persName><forename type="first">H</forename><surname>Takeda</surname></persName><email>hiro-t@ms.aist-nara.ac.jp</email><note type="correspondence"><p>Corresponding author. Present address: Graduate School of Material Science, Nara Institute of Science and Technology, 630-0101 Nara, Japan. Fax: +81-22-215-2104</p></note><affiliation>Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan</affiliation></author><author xml:id="author-0001"><persName><forename type="first">J</forename><surname>Sato</surname></persName><affiliation>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</affiliation></author><author xml:id="author-0002"><persName><forename type="first">T</forename><surname>Kato</surname></persName><affiliation>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</affiliation></author><author xml:id="author-0003"><persName><forename type="first">K</forename><surname>Kawasaki</surname></persName><affiliation>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</affiliation></author><author xml:id="author-0004"><persName><forename type="first">H</forename><surname>Morikoshi</surname></persName><affiliation>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</affiliation></author><author xml:id="author-0005"><persName><forename type="first">K</forename><surname>Shimamura</surname></persName><affiliation>Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan</affiliation></author><author xml:id="author-0006"><persName><forename type="first">T</forename><surname>Fukuda</surname></persName><affiliation>Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan</affiliation></author><idno type="istex">E85ED8AF829D410732702D4887F3B8664486A333</idno><idno type="DOI">10.1016/S0025-5408(00)00201-4</idno><idno type="PII">S0025-5408(00)00201-4</idno></analytic><monogr><title level="j">Materials Research Bulletin</title><title level="j" type="abbrev">MRB</title><idno type="pISSN">0025-5408</idno><idno type="PII">S0025-5408(00)X0060-8</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="2000"></date><biblScope unit="volume">35</biblScope><biblScope unit="issue">2</biblScope><biblScope unit="page" from="245">245</biblScope><biblScope unit="page" to="252">252</biblScope></imprint></monogr></biblStruct></sourceDesc></fileDesc><profileDesc><creation><date>2000</date></creation><langUsage><language ident="en">en</language></langUsage><abstract xml:lang="en"><p>New piezoelectric Sr3TaGa3Si2O14 (STGS) single crystals were grown using the Czochralski technique. The crystal structure of STGS is isostructural to that of Ca3Ga2Ge4O14, which has the trigonal space group P321 and Z = 1. The lattice parameters were a = 8.293(2) and c = 5.078(2) Å. The final R-factors were R = 0.047 and Rw = 0.046 for 1406 unique reflections. The distribution of each cation was found to be ordered in each site. Some piezoelectric properties of STGS are reported.</p></abstract><textClass xml:lang="en"><keywords scheme="keyword"><list><head>Keywords</head><item><term>A. Oxides</term></item><item><term>B. Crystal growth</term></item><item><term>C. X-ray diffraction</term></item><item><term>D. Crystal structure</term></item><item><term>D. Piezoelectricity</term></item></list></keywords></textClass></profileDesc><revisionDesc><change when="2000">Published</change></revisionDesc></teiHeader></istex:fulltextTEI><json:item><extension>txt</extension><original>false</original><mimetype>text/plain</mimetype><uri>https://api.istex.fr/document/E85ED8AF829D410732702D4887F3B8664486A333/fulltext/txt</uri></json:item></fulltext><metadata><istex:metadataXml wicri:clean="Elsevier, elements deleted: ce:floats; body; tail"><istex:xmlDeclaration>version="1.0" encoding="utf-8"</istex:xmlDeclaration><istex:docType PUBLIC="-//ES//DTD journal article DTD version 4.5.2//EN//XML" URI="art452.dtd" name="istex:docType"><istex:entity SYSTEM="gr1" NDATA="IMAGE" name="GR1"></istex:entity><istex:entity SYSTEM="gr2" NDATA="IMAGE" name="GR2"></istex:entity></istex:docType><istex:document><converted-article version="4.5.2" docsubtype="fla" xml:lang="en"><item-info><jid>MRB</jid><aid>1280</aid><ce:pii>S0025-5408(00)00201-4</ce:pii><ce:doi>10.1016/S0025-5408(00)00201-4</ce:doi><ce:copyright type="full-transfer" year="2000">Elsevier Science Inc.</ce:copyright></item-info><head><ce:title>Synthesis and characterization of Sr<ce:inf>3</ce:inf>TaGa<ce:inf>3</ce:inf>Si<ce:inf>2</ce:inf>O<ce:inf>14</ce:inf> single crystals</ce:title><ce:author-group><ce:author><ce:given-name>H</ce:given-name><ce:surname>Takeda</ce:surname><ce:cross-ref refid="AFF1"><ce:sup>a</ce:sup></ce:cross-ref><ce:cross-ref refid="CORR1">*</ce:cross-ref><ce:e-address>hiro-t@ms.aist-nara.ac.jp</ce:e-address></ce:author><ce:author><ce:given-name>J</ce:given-name><ce:surname>Sato</ce:surname><ce:cross-ref refid="AFF2"><ce:sup>b</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>T</ce:given-name><ce:surname>Kato</ce:surname><ce:cross-ref refid="AFF2"><ce:sup>b</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>K</ce:given-name><ce:surname>Kawasaki</ce:surname><ce:cross-ref refid="AFF2"><ce:sup>b</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>H</ce:given-name><ce:surname>Morikoshi</ce:surname><ce:cross-ref refid="AFF2"><ce:sup>b</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>K</ce:given-name><ce:surname>Shimamura</ce:surname><ce:cross-ref refid="AFF1"><ce:sup>a</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>T</ce:given-name><ce:surname>Fukuda</ce:surname><ce:cross-ref refid="AFF1"><ce:sup>a</ce:sup></ce:cross-ref></ce:author><ce:affiliation id="AFF1"><ce:label>a</ce:label><ce:textfn>Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan</ce:textfn></ce:affiliation><ce:affiliation id="AFF2"><ce:label>b</ce:label><ce:textfn>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</ce:textfn></ce:affiliation><ce:correspondence id="CORR1"><ce:label>*</ce:label><ce:text>Corresponding author. Present address: Graduate School of Material Science, Nara Institute of Science and Technology, 630-0101 Nara, Japan. Fax: +81-22-215-2104</ce:text></ce:correspondence></ce:author-group><ce:date-received day="6" month="4" year="1999"></ce:date-received><ce:date-accepted day="6" month="4" year="1999"></ce:date-accepted><ce:miscellaneous>Refereed</ce:miscellaneous><ce:abstract><ce:section-title>Abstract</ce:section-title><ce:abstract-sec><ce:simple-para>New piezoelectric Sr<ce:inf>3</ce:inf>TaGa<ce:inf>3</ce:inf>Si<ce:inf>2</ce:inf>O<ce:inf>14</ce:inf> (STGS) single crystals were grown using the Czochralski technique. The crystal structure of STGS is isostructural to that of Ca<ce:inf>3</ce:inf>Ga<ce:inf>2</ce:inf>Ge<ce:inf>4</ce:inf>O<ce:inf>14</ce:inf>, which has the trigonal space group <ce:italic>P</ce:italic>321 and Z = 1. The lattice parameters were <ce:italic>a</ce:italic> = 8.293(2) and <ce:italic>c</ce:italic> = 5.078(2) Å. The final R-factors were R = 0.047 and R<ce:inf>w</ce:inf> = 0.046 for 1406 unique reflections. The distribution of each cation was found to be ordered in each site. Some piezoelectric properties of STGS are reported.</ce:simple-para></ce:abstract-sec></ce:abstract><ce:keywords class="keyword"><ce:section-title>Keywords</ce:section-title><ce:keyword><ce:text>A. Oxides</ce:text></ce:keyword><ce:keyword><ce:text>B. Crystal growth</ce:text></ce:keyword><ce:keyword><ce:text>C. X-ray diffraction</ce:text></ce:keyword><ce:keyword><ce:text>D. Crystal structure</ce:text></ce:keyword><ce:keyword><ce:text>D. Piezoelectricity</ce:text></ce:keyword></ce:keywords></head></converted-article></istex:document></istex:metadataXml><mods version="3.6"><titleInfo lang="en"><title>Synthesis and characterization of Sr3TaGa3Si2O14 single crystals</title></titleInfo><titleInfo type="alternative" lang="en" contentType="CDATA"><title>Synthesis and characterization of Sr</title></titleInfo><name type="personal"><namePart type="given">H</namePart><namePart type="family">Takeda</namePart><affiliation>E-mail: hiro-t@ms.aist-nara.ac.jp</affiliation><affiliation>Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan</affiliation><description>Corresponding author. Present address: Graduate School of Material Science, Nara Institute of Science and Technology, 630-0101 Nara, Japan. Fax: +81-22-215-2104</description><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">J</namePart><namePart type="family">Sato</namePart><affiliation>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">T</namePart><namePart type="family">Kato</namePart><affiliation>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">K</namePart><namePart type="family">Kawasaki</namePart><affiliation>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">H</namePart><namePart type="family">Morikoshi</namePart><affiliation>Material Research Center, TDK Corporation, 272-8558 Ichikawa, Chiba, Japan</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">K</namePart><namePart type="family">Shimamura</namePart><affiliation>Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">T</namePart><namePart type="family">Fukuda</namePart><affiliation>Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan</affiliation><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="research-article" displayLabel="Full-length article" authority="ISTEX" authorityURI="https://content-type.data.istex.fr" valueURI="https://content-type.data.istex.fr/ark:/67375/XTP-1JC4F85T-7">research-article</genre><originInfo><publisher>ELSEVIER</publisher><dateIssued encoding="w3cdtf">2000</dateIssued><copyrightDate encoding="w3cdtf">2000</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm><languageTerm type="code" authority="rfc3066">en</languageTerm></language><abstract lang="en">Abstract: New piezoelectric Sr3TaGa3Si2O14 (STGS) single crystals were grown using the Czochralski technique. The crystal structure of STGS is isostructural to that of Ca3Ga2Ge4O14, which has the trigonal space group P321 and Z = 1. The lattice parameters were a = 8.293(2) and c = 5.078(2) Å. The final R-factors were R = 0.047 and Rw = 0.046 for 1406 unique reflections. The distribution of each cation was found to be ordered in each site. Some piezoelectric properties of STGS are reported.</abstract><note>Refereed</note><note type="content">Fig. 1: Projections of the Sr3TaGa3Si4O14 structure along the [010] direction (a) and normal to the [001] direction (b).</note><note type="content">Fig. 2: An ORTEP [10] drawing of part of the Sr3TaGa3Si4O14 structure. The thermal ellipsoids enclose an 80% probability distribution.</note><note type="content">Table 1: Composition (wt%) of Sr3TaGa3Si2O14 crystal measured by ICP-ES analysis</note><note type="content">Table 2: Crystal data and intensity collection for Sr3TaGa3Si2O14</note><note type="content">Table 3: Positional and anisotropic thermal parameters for Sr3TaGa3Si2O14</note><note type="content">Table 4: Selected Interatomic Distances (Å) for Sr3TaGa3Si2O14</note><note type="content">Table 5: Some piezoelectric characteristics of Sr3TaGa3O14 single crystal</note><subject lang="en"><genre>Keywords</genre><topic>A. Oxides</topic><topic>B. Crystal growth</topic><topic>C. X-ray diffraction</topic><topic>D. Crystal structure</topic><topic>D. Piezoelectricity</topic></subject><relatedItem type="host"><titleInfo><title>Materials Research Bulletin</title></titleInfo><titleInfo type="abbreviated"><title>MRB</title></titleInfo><genre type="journal" authority="ISTEX" authorityURI="https://publication-type.data.istex.fr" valueURI="https://publication-type.data.istex.fr/ark:/67375/JMC-0GLKJH51-B">journal</genre><originInfo><publisher>ELSEVIER</publisher><dateIssued encoding="w3cdtf">200001</dateIssued></originInfo><identifier type="ISSN">0025-5408</identifier><identifier type="PII">S0025-5408(00)X0060-8</identifier><part><date>200001</date><detail type="volume"><number>35</number><caption>vol.</caption></detail><detail type="issue"><number>2</number><caption>no.</caption></detail><extent unit="issue-pages"><start>151</start><end>314</end></extent><extent unit="pages"><start>245</start><end>252</end></extent></part></relatedItem><identifier type="istex">E85ED8AF829D410732702D4887F3B8664486A333</identifier><identifier type="ark">ark:/67375/6H6-LHPMPP41-5</identifier><identifier type="DOI">10.1016/S0025-5408(00)00201-4</identifier><identifier type="PII">S0025-5408(00)00201-4</identifier><accessCondition type="use and reproduction" contentType="copyright">©2000 Elsevier Science Inc.</accessCondition><recordInfo><recordContentSource authority="ISTEX" authorityURI="https://loaded-corpus.data.istex.fr" valueURI="https://loaded-corpus.data.istex.fr/ark:/67375/XBH-HKKZVM7B-M">elsevier</recordContentSource><recordOrigin>Elsevier Science Inc., ©2000</recordOrigin></recordInfo></mods><json:item><extension>json</extension><original>false</original><mimetype>application/json</mimetype><uri>https://api.istex.fr/document/E85ED8AF829D410732702D4887F3B8664486A333/metadata/json</uri></json:item></metadata><serie></serie></istex></record>Pour manipuler ce document sous Unix (Dilib)
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