Czochralski growth of RE3Ga5SiO14 (RE=La, Pr, Nd) single crystals for the analysis of the influence of rare earth substitution on piezoelectricity
Identifieur interne : 001318 ( Istex/Corpus ); précédent : 001317; suivant : 001319Czochralski growth of RE3Ga5SiO14 (RE=La, Pr, Nd) single crystals for the analysis of the influence of rare earth substitution on piezoelectricity
Auteurs : J. Sato ; H. Takeda ; H. Morikoshi ; K. Shimamura ; P. Rudolph ; T. FukudaSource :
- Journal of Crystal Growth [ 0022-0248 ] ; 1998.
English descriptors
- KwdEn :
- Atomic number, Axial lattice parameter distribution, Cation, Constant diameter, Constant diameters, Crystal, Crystal growth, Crystal properties, Crystal surface, Czochralski, Czochralski growth, Czochralski method, Elsevier science, Frequency control symp, Fukuda, Good transparency, Lattice, Lattice parameter, Oxygen atoms, Phys, Piezoelectric, Piezoelectric properties, Piezoelectric strain, Platinum crucible, Rare earth, Rare earth substitution, Resonance method, Sato, Shimamura, Single crystals, Site substitution, Spiral growth, Step facetting, Structural analysis, Substitution, Temperature gradient, Transmission spectra, Type structure, Wavelength region, Whole length.
- Teeft :
- Atomic number, Axial lattice parameter distribution, Cation, Constant diameter, Constant diameters, Crystal, Crystal growth, Crystal properties, Crystal surface, Czochralski, Czochralski growth, Czochralski method, Elsevier science, Frequency control symp, Fukuda, Good transparency, Lattice, Lattice parameter, Oxygen atoms, Phys, Piezoelectric, Piezoelectric properties, Piezoelectric strain, Platinum crucible, Rare earth, Rare earth substitution, Resonance method, Sato, Shimamura, Single crystals, Site substitution, Spiral growth, Step facetting, Structural analysis, Substitution, Temperature gradient, Transmission spectra, Type structure, Wavelength region, Whole length.
Abstract
Abstract: Pr3Ga5SiO14 and Nd3Ga5SiO14 single crystals with constant diameter of 22mm and lengths up to 145mm have been grown by the Czochralski method. The phase identification, site occupancy of cations and axial lattice parameter distribution were determined by X-ray analysis. The transmission spectra within the 340–3200nm wavelength region were measured. The centre of interest are the piezoelectric properties of (2 1̄ 0) and (0 1 0) plates in comparison with former grown La3Ga5SiO14 crystals in order to find out the influence of the rare earth substitution of La3+ by Pr3+ and Nd3+ on the piezoelectric strain constant d11. A decrease of |d11| with increasing atomic number was found giving the hint to the substitution of lanthanum by further elements with larger atomic radii.
Url:
DOI: 10.1016/S0022-0248(98)00362-5
Links to Exploration step
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Takeda</name><affiliation><mods:affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</mods:affiliation></affiliation></author><author><name sortKey="Morikoshi, H" sort="Morikoshi, H" uniqKey="Morikoshi H" first="H." last="Morikoshi">H. Morikoshi</name><affiliation><mods:affiliation>Materials Research Center, TDK Corporation, Matsugasita 570-4, Minamihatori, Narita 286-0805, Japan</mods:affiliation></affiliation></author><author><name sortKey="Shimamura, K" sort="Shimamura, K" uniqKey="Shimamura K" first="K." last="Shimamura">K. Shimamura</name><affiliation><mods:affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</mods:affiliation></affiliation></author><author><name sortKey="Rudolph, P" sort="Rudolph, P" uniqKey="Rudolph P" first="P." last="Rudolph">P. 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Sato</name><affiliation><mods:affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</mods:affiliation></affiliation><affiliation><mods:affiliation>Corresponding author. Fax: +81 22 215 2104; e-mail: juns@lexus.imr.tohoku.ac.jp.</mods:affiliation></affiliation></author><author><name sortKey="Takeda, H" sort="Takeda, H" uniqKey="Takeda H" first="H." last="Takeda">H. Takeda</name><affiliation><mods:affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</mods:affiliation></affiliation></author><author><name sortKey="Morikoshi, H" sort="Morikoshi, H" uniqKey="Morikoshi H" first="H." last="Morikoshi">H. Morikoshi</name><affiliation><mods:affiliation>Materials Research Center, TDK Corporation, Matsugasita 570-4, Minamihatori, Narita 286-0805, Japan</mods:affiliation></affiliation></author><author><name sortKey="Shimamura, K" sort="Shimamura, K" uniqKey="Shimamura K" first="K." last="Shimamura">K. Shimamura</name><affiliation><mods:affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</mods:affiliation></affiliation></author><author><name sortKey="Rudolph, P" sort="Rudolph, P" uniqKey="Rudolph P" first="P." last="Rudolph">P. Rudolph</name><affiliation><mods:affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</mods:affiliation></affiliation><affiliation><mods:affiliation>1 Permanent address: Institute of Crystal Growth, Rudower Chaussee 6, 12489 Berlin, Germany.</mods:affiliation></affiliation></author><author><name sortKey="Fukuda, T" sort="Fukuda, T" uniqKey="Fukuda T" first="T." last="Fukuda">T. Fukuda</name><affiliation><mods:affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</mods:affiliation></affiliation></author></analytic><monogr></monogr><series><title level="j">Journal of Crystal Growth</title><title level="j" type="abbrev">CRYS</title><idno type="ISSN">0022-0248</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1998">1998</date><biblScope unit="volume">191</biblScope><biblScope unit="issue">4</biblScope><biblScope unit="page" from="746">746</biblScope><biblScope unit="page" to="753">753</biblScope></imprint><idno type="ISSN">0022-0248</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0022-0248</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic number</term><term>Axial lattice parameter distribution</term><term>Cation</term><term>Constant diameter</term><term>Constant diameters</term><term>Crystal</term><term>Crystal growth</term><term>Crystal properties</term><term>Crystal surface</term><term>Czochralski</term><term>Czochralski growth</term><term>Czochralski method</term><term>Elsevier science</term><term>Frequency control symp</term><term>Fukuda</term><term>Good transparency</term><term>Lattice</term><term>Lattice parameter</term><term>Oxygen atoms</term><term>Phys</term><term>Piezoelectric</term><term>Piezoelectric properties</term><term>Piezoelectric strain</term><term>Platinum crucible</term><term>Rare earth</term><term>Rare earth substitution</term><term>Resonance method</term><term>Sato</term><term>Shimamura</term><term>Single crystals</term><term>Site substitution</term><term>Spiral growth</term><term>Step facetting</term><term>Structural analysis</term><term>Substitution</term><term>Temperature gradient</term><term>Transmission spectra</term><term>Type structure</term><term>Wavelength region</term><term>Whole length</term></keywords><keywords scheme="Teeft" xml:lang="en"><term>Atomic number</term><term>Axial lattice parameter distribution</term><term>Cation</term><term>Constant diameter</term><term>Constant diameters</term><term>Crystal</term><term>Crystal growth</term><term>Crystal properties</term><term>Crystal surface</term><term>Czochralski</term><term>Czochralski growth</term><term>Czochralski method</term><term>Elsevier science</term><term>Frequency control symp</term><term>Fukuda</term><term>Good transparency</term><term>Lattice</term><term>Lattice parameter</term><term>Oxygen atoms</term><term>Phys</term><term>Piezoelectric</term><term>Piezoelectric properties</term><term>Piezoelectric strain</term><term>Platinum crucible</term><term>Rare earth</term><term>Rare earth substitution</term><term>Resonance method</term><term>Sato</term><term>Shimamura</term><term>Single crystals</term><term>Site substitution</term><term>Spiral growth</term><term>Step facetting</term><term>Structural analysis</term><term>Substitution</term><term>Temperature gradient</term><term>Transmission spectra</term><term>Type structure</term><term>Wavelength region</term><term>Whole length</term></keywords></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Abstract: Pr3Ga5SiO14 and Nd3Ga5SiO14 single crystals with constant diameter of 22mm and lengths up to 145mm have been grown by the Czochralski method. The phase identification, site occupancy of cations and axial lattice parameter distribution were determined by X-ray analysis. The transmission spectra within the 340–3200nm wavelength region were measured. The centre of interest are the piezoelectric properties of (2 1̄ 0) and (0 1 0) plates in comparison with former grown La3Ga5SiO14 crystals in order to find out the influence of the rare earth substitution of La3+ by Pr3+ and Nd3+ on the piezoelectric strain constant d11. A decrease of |d11| with increasing atomic number was found giving the hint to the substitution of lanthanum by further elements with larger atomic radii.</div></front></TEI><istex><corpusName>elsevier</corpusName><keywords><teeft><json:string>crystal growth</json:string><json:string>czochralski</json:string><json:string>cation</json:string><json:string>sato</json:string><json:string>fukuda</json:string><json:string>shimamura</json:string><json:string>phys</json:string><json:string>single crystals</json:string><json:string>piezoelectric properties</json:string><json:string>rare earth substitution</json:string><json:string>temperature gradient</json:string><json:string>czochralski growth</json:string><json:string>piezoelectric strain</json:string><json:string>frequency control symp</json:string><json:string>substitution</json:string><json:string>transmission spectra</json:string><json:string>wavelength region</json:string><json:string>oxygen atoms</json:string><json:string>atomic number</json:string><json:string>good transparency</json:string><json:string>whole length</json:string><json:string>piezoelectric</json:string><json:string>structural analysis</json:string><json:string>crystal surface</json:string><json:string>constant diameters</json:string><json:string>elsevier science</json:string><json:string>platinum crucible</json:string><json:string>type structure</json:string><json:string>crystal properties</json:string><json:string>lattice parameter</json:string><json:string>rare earth</json:string><json:string>resonance method</json:string><json:string>axial lattice parameter distribution</json:string><json:string>constant diameter</json:string><json:string>czochralski method</json:string><json:string>step facetting</json:string><json:string>spiral growth</json:string><json:string>site substitution</json:string><json:string>crystal</json:string><json:string>lattice</json:string></teeft></keywords><author><json:item><name>J. Sato</name><affiliations><json:string>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</json:string><json:string>Corresponding author. Fax: +81 22 215 2104; e-mail: juns@lexus.imr.tohoku.ac.jp.</json:string></affiliations></json:item><json:item><name>H. Takeda</name><affiliations><json:string>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</json:string></affiliations></json:item><json:item><name>H. Morikoshi</name><affiliations><json:string>Materials Research Center, TDK Corporation, Matsugasita 570-4, Minamihatori, Narita 286-0805, Japan</json:string></affiliations></json:item><json:item><name>K. Shimamura</name><affiliations><json:string>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</json:string></affiliations></json:item><json:item><name>P. Rudolph</name><affiliations><json:string>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</json:string><json:string>1 Permanent address: Institute of Crystal Growth, Rudower Chaussee 6, 12489 Berlin, Germany.</json:string></affiliations></json:item><json:item><name>T. Fukuda</name><affiliations><json:string>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</json:string></affiliations></json:item></author><subject><json:item><lang><json:string>eng</json:string></lang><value>81.10.F</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>77.65</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>77.84</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>84.40</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>Czochralski growth</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>Gallates</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>Rare earth substitution</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>Transmittance</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>Piezoelectricity</value></json:item></subject><language><json:string>eng</json:string></language><originalGenre><json:string>Full-length article</json:string></originalGenre><abstract>Pr3Ga5SiO14 and Nd3Ga5SiO14 single crystals with constant diameter of 22mm and lengths up to 145mm have been grown by the Czochralski method. The phase identification, site occupancy of cations and axial lattice parameter distribution were determined by X-ray analysis. The transmission spectra within the 340–3200nm wavelength region were measured. The centre of interest are the piezoelectric properties of (2 1̄ 0) and (0 1 0) plates in comparison with former grown La3Ga5SiO14 crystals in order to find out the influence of the rare earth substitution of La3+ by Pr3+ and Nd3+ on the piezoelectric strain constant d11. A decrease of |d11| with increasing atomic number was found giving the hint to the substitution of lanthanum by further elements with larger atomic radii.</abstract><qualityIndicators><score>4.437</score><pdfVersion>1.2</pdfVersion><pdfPageSize>504 x 679 pts</pdfPageSize><refBibsNative>true</refBibsNative><keywordCount>9</keywordCount><abstractCharCount>777</abstractCharCount><pdfWordCount>3021</pdfWordCount><pdfCharCount>16781</pdfCharCount><pdfPageCount>8</pdfPageCount><abstractWordCount>118</abstractWordCount></qualityIndicators><title>Czochralski growth of RE3Ga5SiO14 (RE=La, Pr, Nd) single crystals for the analysis of the influence of rare earth substitution on piezoelectricity</title><pii><json:string>S0022-0248(98)00362-5</json:string></pii><genre><json:string>research-article</json:string></genre><host><title>Journal of Crystal Growth</title><language><json:string>unknown</json:string></language><publicationDate>1998</publicationDate><issn><json:string>0022-0248</json:string></issn><pii><json:string>S0022-0248(00)X0094-2</json:string></pii><volume>191</volume><issue>4</issue><pages><first>746</first><last>753</last></pages><genre><json:string>journal</json:string></genre></host><categories><wos><json:string>science</json:string><json:string>physics, applied</json:string><json:string>materials science, multidisciplinary</json:string><json:string>crystallography</json:string></wos><scienceMetrix><json:string>natural sciences</json:string><json:string>physics & astronomy</json:string><json:string>applied physics</json:string></scienceMetrix><inist><json:string>sciences appliquees, technologies et medecines</json:string><json:string>sciences exactes et technologie</json:string><json:string>physique</json:string><json:string>etat condense: structure electronique, proprietes electriques, magnetiques et optiques</json:string></inist></categories><publicationDate>1998</publicationDate><copyrightDate>1998</copyrightDate><doi><json:string>10.1016/S0022-0248(98)00362-5</json:string></doi><id>3287437C1195150D8C9800326310A9111BDB9E49</id><score>1</score><fulltext><json:item><extension>pdf</extension><original>true</original><mimetype>application/pdf</mimetype><uri>https://api.istex.fr/document/3287437C1195150D8C9800326310A9111BDB9E49/fulltext/pdf</uri></json:item><json:item><extension>zip</extension><original>false</original><mimetype>application/zip</mimetype><uri>https://api.istex.fr/document/3287437C1195150D8C9800326310A9111BDB9E49/fulltext/zip</uri></json:item><istex:fulltextTEI uri="https://api.istex.fr/document/3287437C1195150D8C9800326310A9111BDB9E49/fulltext/tei"><teiHeader><fileDesc><titleStmt><title level="a">Czochralski growth of RE3Ga5SiO14 (RE=La, Pr, Nd) single crystals for the analysis of the influence of rare earth substitution on piezoelectricity</title></titleStmt><publicationStmt><authority>ISTEX</authority><publisher>ELSEVIER</publisher><availability><p>©1998 Elsevier Science B.V.</p></availability><date>1998</date></publicationStmt><notesStmt><note type="content">Fig. 1: Projections of the RE3Ga5SiO14 structure along the [1 0 0] (a) and normal to the [0 0 1] direction (b).</note><note type="content">Fig. 2: Scheme of the Czochralski growth arrangement with (1,2) – alumina after heaters, (3) – alumina seed holder, (4) – seed, (5) – growing crystal, (6) – melt, (7) – granular ZrO2 isolation, (8) – alumina tumbler, (9) – RF coil and, (10) – alumina pedestal.</note><note type="content">Fig. 3: Grown Nd3Ga5SiO14 single crystal.</note><note type="content">Fig. 4: Unstable grown Pr3Ga5SiO14 crystal with facetting and spiral growth phenomena.</note><note type="content">Fig. 5: Pr3Ga5Si14 single-crystal stable grown in an increased temperature gradient.</note><note type="content">Fig. 6: Transmission spectra of Pr3Ga5SiO14 and Nd3Ga5SiO14 crystals obtained from (0 0 1) wafers with a thickness of 0.4mm.</note><note type="content">Fig. 7: Axial lattice parameter distribution in Nd3Ga5SiO14 and Pr3Ga5SiO14 CZ crystals grown with pulling rates 1.5 and 1.0mm/h, respectively.</note><note type="content">Fig. 8: Piezoelectric strain constant |d11| versus rare earth substitution of Czochralski grown RE3Ga5SiO14 crystals.</note><note type="content">Table 1: The site occupancies of cations in RE3Ga5SiO14 crystals (R=3.9%, Rw=4.0%: La3Ga5SiO14; R=3.2%, Rw=3.7%: Pr3Ga5SiO14; R=3.7%, Rw=4.1%: Nd3Ga5SiO14)</note></notesStmt><sourceDesc><biblStruct type="inbook"><analytic><title level="a">Czochralski growth of RE3Ga5SiO14 (RE=La, Pr, Nd) single crystals for the analysis of the influence of rare earth substitution on piezoelectricity</title><author xml:id="author-0000"><persName><forename type="first">J.</forename><surname>Sato</surname></persName><affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</affiliation><affiliation>Corresponding author. Fax: +81 22 215 2104; e-mail: juns@lexus.imr.tohoku.ac.jp.</affiliation></author><author xml:id="author-0001"><persName><forename type="first">H.</forename><surname>Takeda</surname></persName><affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</affiliation></author><author xml:id="author-0002"><persName><forename type="first">H.</forename><surname>Morikoshi</surname></persName><affiliation>Materials Research Center, TDK Corporation, Matsugasita 570-4, Minamihatori, Narita 286-0805, Japan</affiliation></author><author xml:id="author-0003"><persName><forename type="first">K.</forename><surname>Shimamura</surname></persName><affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</affiliation></author><author xml:id="author-0004"><persName><forename type="first">P.</forename><surname>Rudolph</surname></persName><affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</affiliation><affiliation>1 Permanent address: Institute of Crystal Growth, Rudower Chaussee 6, 12489 Berlin, Germany.</affiliation></author><author xml:id="author-0005"><persName><forename type="first">T.</forename><surname>Fukuda</surname></persName><affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</affiliation></author><idno type="istex">3287437C1195150D8C9800326310A9111BDB9E49</idno><idno type="DOI">10.1016/S0022-0248(98)00362-5</idno><idno type="PII">S0022-0248(98)00362-5</idno></analytic><monogr><title level="j">Journal of Crystal Growth</title><title level="j" type="abbrev">CRYS</title><idno type="pISSN">0022-0248</idno><idno type="PII">S0022-0248(00)X0094-2</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1998"></date><biblScope unit="volume">191</biblScope><biblScope unit="issue">4</biblScope><biblScope unit="page" from="746">746</biblScope><biblScope unit="page" to="753">753</biblScope></imprint></monogr></biblStruct></sourceDesc></fileDesc><profileDesc><creation><date>1998</date></creation><langUsage><language ident="en">en</language></langUsage><abstract xml:lang="en"><p>Pr3Ga5SiO14 and Nd3Ga5SiO14 single crystals with constant diameter of 22mm and lengths up to 145mm have been grown by the Czochralski method. The phase identification, site occupancy of cations and axial lattice parameter distribution were determined by X-ray analysis. The transmission spectra within the 340–3200nm wavelength region were measured. The centre of interest are the piezoelectric properties of (2 1̄ 0) and (0 1 0) plates in comparison with former grown La3Ga5SiO14 crystals in order to find out the influence of the rare earth substitution of La3+ by Pr3+ and Nd3+ on the piezoelectric strain constant d11. A decrease of |d11| with increasing atomic number was found giving the hint to the substitution of lanthanum by further elements with larger atomic radii.</p></abstract><textClass><keywords scheme="keyword"><list><head>PACS</head><item><term>81.10.F</term></item><item><term>77.65</term></item><item><term>77.84</term></item><item><term>84.40</term></item></list></keywords></textClass><textClass><keywords scheme="keyword"><list><head>Keywords</head><item><term>Czochralski growth</term></item><item><term>Gallates</term></item><item><term>Rare earth substitution</term></item><item><term>Transmittance</term></item><item><term>Piezoelectricity</term></item></list></keywords></textClass></profileDesc><revisionDesc><change when="1998">Published</change></revisionDesc></teiHeader></istex:fulltextTEI><json:item><extension>txt</extension><original>false</original><mimetype>text/plain</mimetype><uri>https://api.istex.fr/document/3287437C1195150D8C9800326310A9111BDB9E49/fulltext/txt</uri></json:item></fulltext><metadata><istex:metadataXml wicri:clean="Elsevier, elements deleted: ce:floats; body; tail"><istex:xmlDeclaration>version="1.0" encoding="utf-8"</istex:xmlDeclaration><istex:docType PUBLIC="-//ES//DTD journal article DTD version 4.5.2//EN//XML" URI="art452.dtd" name="istex:docType"><istex:entity SYSTEM="gr1" NDATA="IMAGE" name="gr1"></istex:entity><istex:entity SYSTEM="gr2" NDATA="IMAGE" name="gr2"></istex:entity><istex:entity SYSTEM="gr3" NDATA="IMAGE" name="gr3"></istex:entity><istex:entity SYSTEM="gr4" NDATA="IMAGE" name="gr4"></istex:entity><istex:entity SYSTEM="gr5" NDATA="IMAGE" name="gr5"></istex:entity><istex:entity SYSTEM="gr6" NDATA="IMAGE" name="gr6"></istex:entity><istex:entity SYSTEM="gr7" NDATA="IMAGE" name="gr7"></istex:entity><istex:entity SYSTEM="gr8" NDATA="IMAGE" name="gr8"></istex:entity></istex:docType><istex:document><converted-article version="4.5.2" docsubtype="fla"><item-info><jid>CRYS</jid><aid>7517</aid><ce:pii>S0022-0248(98)00362-5</ce:pii><ce:doi>10.1016/S0022-0248(98)00362-5</ce:doi><ce:copyright year="1998" type="full-transfer">Elsevier Science B.V.</ce:copyright></item-info><head><ce:title>Czochralski growth of RE<ce:inf>3</ce:inf>Ga<ce:inf>5</ce:inf>SiO<ce:inf>14</ce:inf> (RE=La, Pr, Nd) single crystals for the analysis of the influence of rare earth substitution on piezoelectricity</ce:title><ce:author-group><ce:author><ce:given-name>J.</ce:given-name><ce:surname>Sato</ce:surname><ce:cross-ref refid="AFF1">a</ce:cross-ref><ce:cross-ref refid="CORR1">*</ce:cross-ref></ce:author><ce:author><ce:given-name>H.</ce:given-name><ce:surname>Takeda</ce:surname><ce:cross-ref refid="AFF1">a</ce:cross-ref></ce:author><ce:author><ce:given-name>H.</ce:given-name><ce:surname>Morikoshi</ce:surname><ce:cross-ref refid="AFF2">b</ce:cross-ref></ce:author><ce:author><ce:given-name>K.</ce:given-name><ce:surname>Shimamura</ce:surname><ce:cross-ref refid="AFF1">a</ce:cross-ref></ce:author><ce:author><ce:given-name>P.</ce:given-name><ce:surname>Rudolph</ce:surname><ce:cross-ref refid="AFF1">a</ce:cross-ref><ce:cross-ref refid="FN1"><ce:sup>1</ce:sup></ce:cross-ref><ce:cross-ref refid="FN1"><ce:sup>1</ce:sup></ce:cross-ref></ce:author><ce:author><ce:given-name>T.</ce:given-name><ce:surname>Fukuda</ce:surname><ce:cross-ref refid="AFF1">a</ce:cross-ref></ce:author><ce:affiliation id="AFF1"><ce:label>a</ce:label><ce:textfn>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</ce:textfn></ce:affiliation><ce:affiliation id="AFF2"><ce:label>b</ce:label><ce:textfn>Materials Research Center, TDK Corporation, Matsugasita 570-4, Minamihatori, Narita 286-0805, Japan</ce:textfn></ce:affiliation><ce:correspondence id="CORR1"><ce:label>*</ce:label><ce:text>Corresponding author. Fax: +81 22 215 2104; e-mail: juns@lexus.imr.tohoku.ac.jp.</ce:text></ce:correspondence><ce:footnote id="FN1"><ce:label>1</ce:label><ce:note-para>Permanent address: Institute of Crystal Growth, Rudower Chaussee 6, 12489 Berlin, Germany.</ce:note-para></ce:footnote></ce:author-group><ce:date-received day="21" month="2" year="1998"></ce:date-received><ce:abstract><ce:section-title>Abstract</ce:section-title><ce:abstract-sec><ce:simple-para>Pr<ce:inf>3</ce:inf>Ga<ce:inf>5</ce:inf>SiO<ce:inf>14</ce:inf> and Nd<ce:inf>3</ce:inf>Ga<ce:inf>5</ce:inf>SiO<ce:inf>14</ce:inf> single crystals with constant diameter of 22<ce:hsp sp="0.25"></ce:hsp>mm and lengths up to 145<ce:hsp sp="0.25"></ce:hsp>mm have been grown by the Czochralski method. The phase identification, site occupancy of cations and axial lattice parameter distribution were determined by X-ray analysis. The transmission spectra within the 340–3200<ce:hsp sp="0.25"></ce:hsp>nm wavelength region were measured. The centre of interest are the piezoelectric properties of (2 1̄ 0) and (0 1 0) plates in comparison with former grown La<ce:inf>3</ce:inf>Ga<ce:inf>5</ce:inf>SiO<ce:inf>14</ce:inf> crystals in order to find out the influence of the rare earth substitution of La<ce:sup>3+</ce:sup> by Pr<ce:sup>3+</ce:sup> and Nd<ce:sup>3+</ce:sup> on the piezoelectric strain constant <ce:italic>d</ce:italic><ce:inf>11</ce:inf>. A decrease of |<ce:italic>d</ce:italic><ce:inf>11</ce:inf>| with increasing atomic number was found giving the hint to the substitution of lanthanum by further elements with larger atomic radii.</ce:simple-para></ce:abstract-sec></ce:abstract><ce:keywords class="pacs"><ce:section-title>PACS</ce:section-title><ce:keyword><ce:text>81.10.F</ce:text></ce:keyword><ce:keyword><ce:text>77.65</ce:text></ce:keyword><ce:keyword><ce:text>77.84</ce:text></ce:keyword><ce:keyword><ce:text>84.40</ce:text></ce:keyword></ce:keywords><ce:keywords class="keyword"><ce:section-title>Keywords</ce:section-title><ce:keyword><ce:text>Czochralski growth</ce:text></ce:keyword><ce:keyword><ce:text>Gallates</ce:text></ce:keyword><ce:keyword><ce:text>Rare earth substitution</ce:text></ce:keyword><ce:keyword><ce:text>Transmittance</ce:text></ce:keyword><ce:keyword><ce:text>Piezoelectricity</ce:text></ce:keyword></ce:keywords></head></converted-article></istex:document></istex:metadataXml><mods version="3.6"><titleInfo><title>Czochralski growth of RE3Ga5SiO14 (RE=La, Pr, Nd) single crystals for the analysis of the influence of rare earth substitution on piezoelectricity</title></titleInfo><titleInfo type="alternative" contentType="CDATA"><title>Czochralski growth of RE</title></titleInfo><name type="personal"><namePart type="given">J.</namePart><namePart type="family">Sato</namePart><affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</affiliation><affiliation>Corresponding author. Fax: +81 22 215 2104; e-mail: juns@lexus.imr.tohoku.ac.jp.</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">H.</namePart><namePart type="family">Takeda</namePart><affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">H.</namePart><namePart type="family">Morikoshi</namePart><affiliation>Materials Research Center, TDK Corporation, Matsugasita 570-4, Minamihatori, Narita 286-0805, Japan</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">K.</namePart><namePart type="family">Shimamura</namePart><affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">P.</namePart><namePart type="family">Rudolph</namePart><affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</affiliation><affiliation>1 Permanent address: Institute of Crystal Growth, Rudower Chaussee 6, 12489 Berlin, Germany.</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">T.</namePart><namePart type="family">Fukuda</namePart><affiliation>Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577, Japan</affiliation><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="research-article" displayLabel="Full-length article" authority="ISTEX" authorityURI="https://content-type.data.istex.fr" valueURI="https://content-type.data.istex.fr/ark:/67375/XTP-1JC4F85T-7">research-article</genre><originInfo><publisher>ELSEVIER</publisher><dateIssued encoding="w3cdtf">1998</dateIssued><copyrightDate encoding="w3cdtf">1998</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm><languageTerm type="code" authority="rfc3066">en</languageTerm></language><abstract lang="en">Abstract: Pr3Ga5SiO14 and Nd3Ga5SiO14 single crystals with constant diameter of 22mm and lengths up to 145mm have been grown by the Czochralski method. The phase identification, site occupancy of cations and axial lattice parameter distribution were determined by X-ray analysis. The transmission spectra within the 340–3200nm wavelength region were measured. The centre of interest are the piezoelectric properties of (2 1̄ 0) and (0 1 0) plates in comparison with former grown La3Ga5SiO14 crystals in order to find out the influence of the rare earth substitution of La3+ by Pr3+ and Nd3+ on the piezoelectric strain constant d11. A decrease of |d11| with increasing atomic number was found giving the hint to the substitution of lanthanum by further elements with larger atomic radii.</abstract><note type="content">Fig. 1: Projections of the RE3Ga5SiO14 structure along the [1 0 0] (a) and normal to the [0 0 1] direction (b).</note><note type="content">Fig. 2: Scheme of the Czochralski growth arrangement with (1,2) – alumina after heaters, (3) – alumina seed holder, (4) – seed, (5) – growing crystal, (6) – melt, (7) – granular ZrO2 isolation, (8) – alumina tumbler, (9) – RF coil and, (10) – alumina pedestal.</note><note type="content">Fig. 3: Grown Nd3Ga5SiO14 single crystal.</note><note type="content">Fig. 4: Unstable grown Pr3Ga5SiO14 crystal with facetting and spiral growth phenomena.</note><note type="content">Fig. 5: Pr3Ga5Si14 single-crystal stable grown in an increased temperature gradient.</note><note type="content">Fig. 6: Transmission spectra of Pr3Ga5SiO14 and Nd3Ga5SiO14 crystals obtained from (0 0 1) wafers with a thickness of 0.4mm.</note><note type="content">Fig. 7: Axial lattice parameter distribution in Nd3Ga5SiO14 and Pr3Ga5SiO14 CZ crystals grown with pulling rates 1.5 and 1.0mm/h, respectively.</note><note type="content">Fig. 8: Piezoelectric strain constant |d11| versus rare earth substitution of Czochralski grown RE3Ga5SiO14 crystals.</note><note type="content">Table 1: The site occupancies of cations in RE3Ga5SiO14 crystals (R=3.9%, Rw=4.0%: La3Ga5SiO14; R=3.2%, Rw=3.7%: Pr3Ga5SiO14; R=3.7%, Rw=4.1%: Nd3Ga5SiO14)</note><subject><genre>PACS</genre><topic>81.10.F</topic><topic>77.65</topic><topic>77.84</topic><topic>84.40</topic></subject><subject><genre>Keywords</genre><topic>Czochralski growth</topic><topic>Gallates</topic><topic>Rare earth substitution</topic><topic>Transmittance</topic><topic>Piezoelectricity</topic></subject><relatedItem type="host"><titleInfo><title>Journal of Crystal Growth</title></titleInfo><titleInfo type="abbreviated"><title>CRYS</title></titleInfo><genre type="journal" authority="ISTEX" authorityURI="https://publication-type.data.istex.fr" valueURI="https://publication-type.data.istex.fr/ark:/67375/JMC-0GLKJH51-B">journal</genre><originInfo><publisher>ELSEVIER</publisher><dateIssued encoding="w3cdtf">19980801</dateIssued></originInfo><identifier type="ISSN">0022-0248</identifier><identifier type="PII">S0022-0248(00)X0094-2</identifier><part><date>19980801</date><detail type="volume"><number>191</number><caption>vol.</caption></detail><detail type="issue"><number>4</number><caption>no.</caption></detail><extent unit="issue-pages"><start>599</start><end>924</end></extent><extent unit="pages"><start>746</start><end>753</end></extent></part></relatedItem><identifier type="istex">3287437C1195150D8C9800326310A9111BDB9E49</identifier><identifier type="ark">ark:/67375/6H6-F36DSMMQ-F</identifier><identifier type="DOI">10.1016/S0022-0248(98)00362-5</identifier><identifier type="PII">S0022-0248(98)00362-5</identifier><accessCondition type="use and reproduction" contentType="copyright">©1998 Elsevier Science B.V.</accessCondition><recordInfo><recordContentSource authority="ISTEX" authorityURI="https://loaded-corpus.data.istex.fr" valueURI="https://loaded-corpus.data.istex.fr/ark:/67375/XBH-HKKZVM7B-M">elsevier</recordContentSource><recordOrigin>Elsevier Science B.V., ©1998</recordOrigin></recordInfo></mods><json:item><extension>json</extension><original>false</original><mimetype>application/json</mimetype><uri>https://api.istex.fr/document/3287437C1195150D8C9800326310A9111BDB9E49/metadata/json</uri></json:item></metadata><serie></serie></istex></record>Pour manipuler ce document sous Unix (Dilib)
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