Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface.
Identifieur interne : 000708 ( PubMed/Curation ); précédent : 000707; suivant : 000709Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface.
Auteurs : Sumin Choi [Australie] ; David J. Rogers [France] ; Eric V. Sandana [France] ; Philippe Bove [France] ; Ferechteh H. Teherani [France] ; Christian Nenstiel [Allemagne] ; Axel Hoffmann [Allemagne] ; Ryan Mcclintock [États-Unis] ; Manijeh Razeghi [États-Unis] ; David Look [États-Unis] ; Angus Gentle [Australie] ; Matthew R. Phillips [Australie] ; Cuong Ton-That [Australie]Source :
- Scientific reports [ 2045-2322 ] ; 2017.
Abstract
We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.
DOI: 10.1038/s41598-017-07568-z
PubMed: 28784987
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Teherani</name><affiliation wicri:level="1"><nlm:affiliation>Nanovation, 8 Route de Chevreuse, 78117, Châteaufort, France.</nlm:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Nanovation, 8 Route de Chevreuse, 78117, Châteaufort</wicri:regionArea></affiliation></author><author><name sortKey="Nenstiel, Christian" sort="Nenstiel, Christian" uniqKey="Nenstiel C" first="Christian" last="Nenstiel">Christian Nenstiel</name><affiliation wicri:level="1"><nlm:affiliation>Institut für Festkörperphysik, Technische Universität Berlin, 10623, Berlin, Germany.</nlm:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Festkörperphysik, Technische Universität Berlin, 10623, Berlin</wicri:regionArea></affiliation></author><author><name sortKey="Hoffmann, Axel" sort="Hoffmann, Axel" uniqKey="Hoffmann A" first="Axel" last="Hoffmann">Axel Hoffmann</name><affiliation wicri:level="1"><nlm:affiliation>Institut für Festkörperphysik, Technische Universität Berlin, 10623, Berlin, Germany.</nlm:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Festkörperphysik, Technische Universität Berlin, 10623, Berlin</wicri:regionArea></affiliation></author><author><name sortKey="Mcclintock, Ryan" sort="Mcclintock, Ryan" uniqKey="Mcclintock R" first="Ryan" last="Mcclintock">Ryan Mcclintock</name><affiliation wicri:level="1"><nlm:affiliation>Center for Quantum Devices, ECE Department, Northwestern University, Evanston, IL, 60208, USA.</nlm:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>Center for Quantum Devices, ECE Department, Northwestern University, Evanston, IL, 60208</wicri:regionArea></affiliation></author><author><name sortKey="Razeghi, Manijeh" sort="Razeghi, Manijeh" uniqKey="Razeghi M" first="Manijeh" last="Razeghi">Manijeh Razeghi</name><affiliation wicri:level="1"><nlm:affiliation>Center for Quantum Devices, ECE Department, Northwestern University, Evanston, IL, 60208, USA.</nlm:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>Center for Quantum Devices, ECE Department, Northwestern University, Evanston, IL, 60208</wicri:regionArea></affiliation></author><author><name sortKey="Look, David" sort="Look, David" uniqKey="Look D" first="David" last="Look">David Look</name><affiliation wicri:level="1"><nlm:affiliation>Semiconductor Research Centre, Wright State University, Dayton, OH, 45435, USA.</nlm:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>Semiconductor Research Centre, Wright State University, Dayton, OH, 45435</wicri:regionArea></affiliation></author><author><name sortKey="Gentle, Angus" sort="Gentle, Angus" uniqKey="Gentle A" first="Angus" last="Gentle">Angus Gentle</name><affiliation wicri:level="1"><nlm:affiliation>School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007, Australia.</nlm:affiliation><country xml:lang="fr">Australie</country><wicri:regionArea>School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007</wicri:regionArea></affiliation></author><author><name sortKey="Phillips, Matthew R" sort="Phillips, Matthew R" uniqKey="Phillips M" first="Matthew R" last="Phillips">Matthew R. Phillips</name><affiliation wicri:level="1"><nlm:affiliation>School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007, Australia.</nlm:affiliation><country xml:lang="fr">Australie</country><wicri:regionArea>School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007</wicri:regionArea></affiliation></author><author><name sortKey="Ton That, Cuong" sort="Ton That, Cuong" uniqKey="Ton That C" first="Cuong" last="Ton-That">Cuong Ton-That</name><affiliation wicri:level="1"><nlm:affiliation>School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007, Australia. cuong.ton-that@uts.edu.au.</nlm:affiliation><country xml:lang="fr">Australie</country><wicri:regionArea>School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007</wicri:regionArea></affiliation></author></analytic><series><title level="j">Scientific reports</title><idno type="eISSN">2045-2322</idno><imprint><date when="2017" type="published">2017</date></imprint></series></biblStruct></sourceDesc></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.</div></front></TEI><pubmed><MedlineCitation Status="In-Data-Review" Owner="NLM"><PMID Version="1">28784987</PMID><DateCreated><Year>2017</Year><Month>08</Month><Day>08</Day></DateCreated><DateRevised><Year>2017</Year><Month>11</Month><Day>17</Day></DateRevised><Article PubModel="Electronic"><Journal><ISSN IssnType="Electronic">2045-2322</ISSN><JournalIssue CitedMedium="Internet"><Volume>7</Volume><Issue>1</Issue><PubDate><Year>2017</Year><Month>Aug</Month><Day>07</Day></PubDate></JournalIssue><Title>Scientific reports</Title><ISOAbbreviation>Sci Rep</ISOAbbreviation></Journal><ArticleTitle>Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface.</ArticleTitle><Pagination><MedlinePgn>7457</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1038/s41598-017-07568-z</ELocationID><Abstract><AbstractText>We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Choi</LastName><ForeName>Sumin</ForeName><Initials>S</Initials><AffiliationInfo><Affiliation>School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007, Australia.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Rogers</LastName><ForeName>David J</ForeName><Initials>DJ</Initials><AffiliationInfo><Affiliation>Nanovation, 8 Route de Chevreuse, 78117, Châteaufort, France.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Sandana</LastName><ForeName>Eric V</ForeName><Initials>EV</Initials><AffiliationInfo><Affiliation>Nanovation, 8 Route de Chevreuse, 78117, Châteaufort, France.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Bove</LastName><ForeName>Philippe</ForeName><Initials>P</Initials><AffiliationInfo><Affiliation>Nanovation, 8 Route de Chevreuse, 78117, Châteaufort, France.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Teherani</LastName><ForeName>Ferechteh H</ForeName><Initials>FH</Initials><AffiliationInfo><Affiliation>Nanovation, 8 Route de Chevreuse, 78117, Châteaufort, France.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Nenstiel</LastName><ForeName>Christian</ForeName><Initials>C</Initials><AffiliationInfo><Affiliation>Institut für Festkörperphysik, Technische Universität Berlin, 10623, Berlin, Germany.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Hoffmann</LastName><ForeName>Axel</ForeName><Initials>A</Initials><AffiliationInfo><Affiliation>Institut für Festkörperphysik, Technische Universität Berlin, 10623, Berlin, Germany.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>McClintock</LastName><ForeName>Ryan</ForeName><Initials>R</Initials><AffiliationInfo><Affiliation>Center for Quantum Devices, ECE Department, Northwestern University, Evanston, IL, 60208, USA.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Razeghi</LastName><ForeName>Manijeh</ForeName><Initials>M</Initials><AffiliationInfo><Affiliation>Center for Quantum Devices, ECE Department, Northwestern University, Evanston, IL, 60208, USA.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Look</LastName><ForeName>David</ForeName><Initials>D</Initials><AffiliationInfo><Affiliation>Semiconductor Research Centre, Wright State University, Dayton, OH, 45435, USA.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Gentle</LastName><ForeName>Angus</ForeName><Initials>A</Initials><AffiliationInfo><Affiliation>School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007, Australia.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Phillips</LastName><ForeName>Matthew R</ForeName><Initials>MR</Initials><AffiliationInfo><Affiliation>School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007, Australia.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Ton-That</LastName><ForeName>Cuong</ForeName><Initials>C</Initials><AffiliationInfo><Affiliation>School of Mathematical and Physical Science, University of Technology Sydney, Broadway, PO Box 123, NSW 2007, Australia. cuong.ton-that@uts.edu.au.</Affiliation></AffiliationInfo></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType UI="D016428">Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2017</Year><Month>08</Month><Day>07</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Sci Rep</MedlineTA><NlmUniqueID>101563288</NlmUniqueID><ISSNLinking>2045-2322</ISSNLinking></MedlineJournalInfo><CommentsCorrectionsList><CommentsCorrections RefType="Cites"><RefSource>Phys Rev B Condens Matter. 1991 Feb 15;43(6):4771-4776</RefSource><PMID Version="1">9997846</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Nanotechnology. 2009 Jul 29;20(30):305701</RefSource><PMID Version="1">19584419</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Opt Lett. 2015 Aug 1;40(15):3667-70</RefSource><PMID Version="1">26258384</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Nanoscale. 2016 Apr 14;8(14 ):7631-7</RefSource><PMID Version="1">26987850</PMID></CommentsCorrections><CommentsCorrections RefType="Cites"><RefSource>Science. 2007 Mar 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Version="1">29146950</PMID></CommentsCorrections></CommentsCorrectionsList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2016</Year><Month>10</Month><Day>31</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2017</Year><Month>06</Month><Day>28</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2017</Year><Month>8</Month><Day>9</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2017</Year><Month>8</Month><Day>9</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2017</Year><Month>8</Month><Day>9</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>epublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">28784987</ArticleId><ArticleId IdType="doi">10.1038/s41598-017-07568-z</ArticleId><ArticleId IdType="pii">10.1038/s41598-017-07568-z</ArticleId><ArticleId 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