The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.
Identifieur interne : 000D26 ( PubMed/Corpus ); précédent : 000D25; suivant : 000D27The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.
Auteurs : C J Humphreys ; J T Griffiths ; F. Tang ; F. Oehler ; S D Findlay ; C. Zheng ; J. Etheridge ; T L Martin ; P A J. Bagot ; M P Moody ; D. Sutherland ; P. Dawson ; S. Schulz ; S. Zhang ; W Y Fu ; T. Zhu ; M J Kappers ; R A OliverSource :
- Ultramicroscopy [ 1879-2723 ] ; 2017.
Abstract
We have used high resolution transmission electron microscopy (HRTEM), aberration-corrected quantitative scanning transmission electron microscopy (Q-STEM), atom probe tomography (APT) and X-ray diffraction (XRD) to study the atomic structure of (0001) polar and (11-20) non-polar InGaN quantum wells (QWs). This paper provides an overview of the results. Polar (0001) InGaN in QWs is a random alloy, with In replacing Ga randomly. The InGaN QWs have atomic height interface steps, resulting in QW width fluctuations. The electrons are localised at the top QW interface by the built-in electric field and the well-width fluctuations, with a localisation energy of typically 20meV. The holes are localised near the bottom QW interface, by indium fluctuations in the random alloy, with a localisation energy of typically 60meV. On the other hand, the non-polar (11-20) InGaN QWs contain nanometre-scale indium-rich clusters which we suggest localise the carriers and produce longer wavelength (lower energy) emission than from random alloy non-polar InGaN QWs of the same average composition. The reason for the indium-rich clusters in non-polar (11-20) InGaN QWs is not yet clear, but may be connected to the lower QW growth temperature for the (11-20) InGaN QWs compared to the (0001) polar InGaN QWs.
DOI: 10.1016/j.ultramic.2017.01.019
PubMed: 28196629
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Bagot</name><affiliation><nlm:affiliation>Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK. Electronic address: paul.bagot@materials.ox.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Moody, M P" sort="Moody, M P" uniqKey="Moody M" first="M P" last="Moody">M P Moody</name><affiliation><nlm:affiliation>Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK. Electronic address: michael.moody@materials.ox.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Sutherland, D" sort="Sutherland, D" uniqKey="Sutherland D" first="D" last="Sutherland">D. Sutherland</name><affiliation><nlm:affiliation>School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, UK. Electronic address: danny.sutherland@manchester.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Dawson, P" sort="Dawson, P" uniqKey="Dawson P" first="P" last="Dawson">P. Dawson</name><affiliation><nlm:affiliation>School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, UK. Electronic address: philip.dawson@manchester.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Schulz, S" sort="Schulz, S" uniqKey="Schulz S" first="S" last="Schulz">S. Schulz</name><affiliation><nlm:affiliation>Tyndall National Institute, Lee Maltings Complex, Dyke Parade, Cork, Ireland. Electronic address: stefan.schulz@tyndall.ie.</nlm:affiliation></affiliation></author><author><name sortKey="Zhang, S" sort="Zhang, S" uniqKey="Zhang S" first="S" last="Zhang">S. Zhang</name><affiliation><nlm:affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: siyuan.zhang@mpie.de.</nlm:affiliation></affiliation></author><author><name sortKey="Fu, W Y" sort="Fu, W Y" uniqKey="Fu W" first="W Y" last="Fu">W Y Fu</name><affiliation><nlm:affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: wyfu@hku.hk.</nlm:affiliation></affiliation></author><author><name sortKey="Zhu, T" sort="Zhu, T" uniqKey="Zhu T" first="T" last="Zhu">T. Zhu</name><affiliation><nlm:affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK.</nlm:affiliation></affiliation></author><author><name sortKey="Kappers, M J" sort="Kappers, M J" uniqKey="Kappers M" first="M J" last="Kappers">M J Kappers</name><affiliation><nlm:affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: mjk30@cam.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Oliver, R A" sort="Oliver, R A" uniqKey="Oliver R" first="R A" last="Oliver">R A Oliver</name><affiliation><nlm:affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: rao28@cam.ac.uk.</nlm:affiliation></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">PubMed</idno><date when="2017">2017</date><idno type="RBID">pubmed:28196629</idno><idno type="pmid">28196629</idno><idno type="doi">10.1016/j.ultramic.2017.01.019</idno><idno type="wicri:Area/PubMed/Corpus">000D26</idno><idno type="wicri:explorRef" wicri:stream="PubMed" wicri:step="Corpus" wicri:corpus="PubMed">000D26</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en">The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.</title><author><name sortKey="Humphreys, C J" sort="Humphreys, C J" uniqKey="Humphreys C" first="C J" last="Humphreys">C J Humphreys</name><affiliation><nlm:affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: colin.humphreys@msm.cam.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Griffiths, J T" sort="Griffiths, J T" uniqKey="Griffiths J" first="J T" last="Griffiths">J T Griffiths</name><affiliation><nlm:affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: jg641@cam.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Tang, F" sort="Tang, F" uniqKey="Tang F" first="F" last="Tang">F. Tang</name><affiliation><nlm:affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: ft274@cam.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Oehler, F" sort="Oehler, F" uniqKey="Oehler F" first="F" last="Oehler">F. Oehler</name><affiliation><nlm:affiliation>CNRS/C2N, Paris Sud University, Route de Nozay, 91460 Marcoussis, France. Electronic address: fabrice.oehler@lpn.cnrs.fr.</nlm:affiliation></affiliation></author><author><name sortKey="Findlay, S D" sort="Findlay, S D" uniqKey="Findlay S" first="S D" last="Findlay">S D Findlay</name><affiliation><nlm:affiliation>School of Physics and Astronomy, Monash University, Victoria 3800, Australia. Electronic address: scott.findlay@monash.edu.</nlm:affiliation></affiliation></author><author><name sortKey="Zheng, C" sort="Zheng, C" uniqKey="Zheng C" first="C" last="Zheng">C. Zheng</name><affiliation><nlm:affiliation>Monash Centre for Electron Microscopy, Monash University, Victoria 3800, Australia. Electronic address: changlin.zheng@monash.edu.</nlm:affiliation></affiliation></author><author><name sortKey="Etheridge, J" sort="Etheridge, J" uniqKey="Etheridge J" first="J" last="Etheridge">J. Etheridge</name><affiliation><nlm:affiliation>Department of Materials Science and Engineering, Monash University, Victoria 3800, Australia. Electronic address: joanne.etheridge@mcem.monash.edu.</nlm:affiliation></affiliation></author><author><name sortKey="Martin, T L" sort="Martin, T L" uniqKey="Martin T" first="T L" last="Martin">T L Martin</name><affiliation><nlm:affiliation>Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK. Electronic address: tomas.martin@materials.ox.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Bagot, P A J" sort="Bagot, P A J" uniqKey="Bagot P" first="P A J" last="Bagot">P A J. Bagot</name><affiliation><nlm:affiliation>Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK. Electronic address: paul.bagot@materials.ox.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Moody, M P" sort="Moody, M P" uniqKey="Moody M" first="M P" last="Moody">M P Moody</name><affiliation><nlm:affiliation>Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK. Electronic address: michael.moody@materials.ox.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Sutherland, D" sort="Sutherland, D" uniqKey="Sutherland D" first="D" last="Sutherland">D. Sutherland</name><affiliation><nlm:affiliation>School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, UK. Electronic address: danny.sutherland@manchester.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Dawson, P" sort="Dawson, P" uniqKey="Dawson P" first="P" last="Dawson">P. Dawson</name><affiliation><nlm:affiliation>School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, UK. Electronic address: philip.dawson@manchester.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Schulz, S" sort="Schulz, S" uniqKey="Schulz S" first="S" last="Schulz">S. Schulz</name><affiliation><nlm:affiliation>Tyndall National Institute, Lee Maltings Complex, Dyke Parade, Cork, Ireland. Electronic address: stefan.schulz@tyndall.ie.</nlm:affiliation></affiliation></author><author><name sortKey="Zhang, S" sort="Zhang, S" uniqKey="Zhang S" first="S" last="Zhang">S. Zhang</name><affiliation><nlm:affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: siyuan.zhang@mpie.de.</nlm:affiliation></affiliation></author><author><name sortKey="Fu, W Y" sort="Fu, W Y" uniqKey="Fu W" first="W Y" last="Fu">W Y Fu</name><affiliation><nlm:affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: wyfu@hku.hk.</nlm:affiliation></affiliation></author><author><name sortKey="Zhu, T" sort="Zhu, T" uniqKey="Zhu T" first="T" last="Zhu">T. Zhu</name><affiliation><nlm:affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK.</nlm:affiliation></affiliation></author><author><name sortKey="Kappers, M J" sort="Kappers, M J" uniqKey="Kappers M" first="M J" last="Kappers">M J Kappers</name><affiliation><nlm:affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: mjk30@cam.ac.uk.</nlm:affiliation></affiliation></author><author><name sortKey="Oliver, R A" sort="Oliver, R A" uniqKey="Oliver R" first="R A" last="Oliver">R A Oliver</name><affiliation><nlm:affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: rao28@cam.ac.uk.</nlm:affiliation></affiliation></author></analytic><series><title level="j">Ultramicroscopy</title><idno type="eISSN">1879-2723</idno><imprint><date when="2017" type="published">2017</date></imprint></series></biblStruct></sourceDesc></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have used high resolution transmission electron microscopy (HRTEM), aberration-corrected quantitative scanning transmission electron microscopy (Q-STEM), atom probe tomography (APT) and X-ray diffraction (XRD) to study the atomic structure of (0001) polar and (11-20) non-polar InGaN quantum wells (QWs). This paper provides an overview of the results. Polar (0001) InGaN in QWs is a random alloy, with In replacing Ga randomly. The InGaN QWs have atomic height interface steps, resulting in QW width fluctuations. The electrons are localised at the top QW interface by the built-in electric field and the well-width fluctuations, with a localisation energy of typically 20meV. The holes are localised near the bottom QW interface, by indium fluctuations in the random alloy, with a localisation energy of typically 60meV. On the other hand, the non-polar (11-20) InGaN QWs contain nanometre-scale indium-rich clusters which we suggest localise the carriers and produce longer wavelength (lower energy) emission than from random alloy non-polar InGaN QWs of the same average composition. The reason for the indium-rich clusters in non-polar (11-20) InGaN QWs is not yet clear, but may be connected to the lower QW growth temperature for the (11-20) InGaN QWs compared to the (0001) polar InGaN QWs.</div></front></TEI><pubmed><MedlineCitation Status="In-Data-Review" Owner="NLM"><PMID Version="1">28196629</PMID><DateCreated><Year>2017</Year><Month>02</Month><Day>15</Day></DateCreated><DateRevised><Year>2017</Year><Month>04</Month><Day>15</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1879-2723</ISSN><JournalIssue CitedMedium="Internet"><Volume>176</Volume><PubDate><Year>2017</Year><Month>May</Month></PubDate></JournalIssue><Title>Ultramicroscopy</Title><ISOAbbreviation>Ultramicroscopy</ISOAbbreviation></Journal><ArticleTitle>The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.</ArticleTitle><Pagination><MedlinePgn>93-98</MedlinePgn></Pagination><ELocationID EIdType="pii" ValidYN="Y">S0304-3991(17)30048-7</ELocationID><ELocationID EIdType="doi" ValidYN="Y">10.1016/j.ultramic.2017.01.019</ELocationID><Abstract><AbstractText>We have used high resolution transmission electron microscopy (HRTEM), aberration-corrected quantitative scanning transmission electron microscopy (Q-STEM), atom probe tomography (APT) and X-ray diffraction (XRD) to study the atomic structure of (0001) polar and (11-20) non-polar InGaN quantum wells (QWs). This paper provides an overview of the results. Polar (0001) InGaN in QWs is a random alloy, with In replacing Ga randomly. The InGaN QWs have atomic height interface steps, resulting in QW width fluctuations. The electrons are localised at the top QW interface by the built-in electric field and the well-width fluctuations, with a localisation energy of typically 20meV. The holes are localised near the bottom QW interface, by indium fluctuations in the random alloy, with a localisation energy of typically 60meV. On the other hand, the non-polar (11-20) InGaN QWs contain nanometre-scale indium-rich clusters which we suggest localise the carriers and produce longer wavelength (lower energy) emission than from random alloy non-polar InGaN QWs of the same average composition. The reason for the indium-rich clusters in non-polar (11-20) InGaN QWs is not yet clear, but may be connected to the lower QW growth temperature for the (11-20) InGaN QWs compared to the (0001) polar InGaN QWs.</AbstractText><CopyrightInformation>Copyright © 2017 The Authors. Published by Elsevier B.V. All rights reserved.</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Humphreys</LastName><ForeName>C J</ForeName><Initials>CJ</Initials><AffiliationInfo><Affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: colin.humphreys@msm.cam.ac.uk.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Griffiths</LastName><ForeName>J T</ForeName><Initials>JT</Initials><AffiliationInfo><Affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: jg641@cam.ac.uk.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Tang</LastName><ForeName>F</ForeName><Initials>F</Initials><AffiliationInfo><Affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: ft274@cam.ac.uk.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Oehler</LastName><ForeName>F</ForeName><Initials>F</Initials><AffiliationInfo><Affiliation>CNRS/C2N, Paris Sud University, Route de Nozay, 91460 Marcoussis, France. Electronic address: fabrice.oehler@lpn.cnrs.fr.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Findlay</LastName><ForeName>S D</ForeName><Initials>SD</Initials><AffiliationInfo><Affiliation>School of Physics and Astronomy, Monash University, Victoria 3800, Australia. Electronic address: scott.findlay@monash.edu.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Zheng</LastName><ForeName>C</ForeName><Initials>C</Initials><AffiliationInfo><Affiliation>Monash Centre for Electron Microscopy, Monash University, Victoria 3800, Australia. Electronic address: changlin.zheng@monash.edu.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Etheridge</LastName><ForeName>J</ForeName><Initials>J</Initials><AffiliationInfo><Affiliation>Department of Materials Science and Engineering, Monash University, Victoria 3800, Australia. Electronic address: joanne.etheridge@mcem.monash.edu.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Martin</LastName><ForeName>T L</ForeName><Initials>TL</Initials><AffiliationInfo><Affiliation>Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK. Electronic address: tomas.martin@materials.ox.ac.uk.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Bagot</LastName><ForeName>P A J</ForeName><Initials>PAJ</Initials><AffiliationInfo><Affiliation>Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK. Electronic address: paul.bagot@materials.ox.ac.uk.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Moody</LastName><ForeName>M P</ForeName><Initials>MP</Initials><AffiliationInfo><Affiliation>Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK. Electronic address: michael.moody@materials.ox.ac.uk.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Sutherland</LastName><ForeName>D</ForeName><Initials>D</Initials><AffiliationInfo><Affiliation>School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, UK. Electronic address: danny.sutherland@manchester.ac.uk.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Dawson</LastName><ForeName>P</ForeName><Initials>P</Initials><AffiliationInfo><Affiliation>School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, UK. Electronic address: philip.dawson@manchester.ac.uk.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Schulz</LastName><ForeName>S</ForeName><Initials>S</Initials><AffiliationInfo><Affiliation>Tyndall National Institute, Lee Maltings Complex, Dyke Parade, Cork, Ireland. Electronic address: stefan.schulz@tyndall.ie.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Zhang</LastName><ForeName>S</ForeName><Initials>S</Initials><AffiliationInfo><Affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: siyuan.zhang@mpie.de.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Fu</LastName><ForeName>W Y</ForeName><Initials>WY</Initials><AffiliationInfo><Affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: wyfu@hku.hk.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Zhu</LastName><ForeName>T</ForeName><Initials>T</Initials><AffiliationInfo><Affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Kappers</LastName><ForeName>M J</ForeName><Initials>MJ</Initials><AffiliationInfo><Affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: mjk30@cam.ac.uk.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Oliver</LastName><ForeName>R A</ForeName><Initials>RA</Initials><AffiliationInfo><Affiliation>Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK. Electronic address: rao28@cam.ac.uk.</Affiliation></AffiliationInfo></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType UI="D016428">Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2017</Year><Month>02</Month><Day>03</Day></ArticleDate></Article><MedlineJournalInfo><Country>Netherlands</Country><MedlineTA>Ultramicroscopy</MedlineTA><NlmUniqueID>7513702</NlmUniqueID><ISSNLinking>0304-3991</ISSNLinking></MedlineJournalInfo><KeywordList Owner="NOTNLM"><Keyword MajorTopicYN="N">Aberration-corrected electron microscopy</Keyword><Keyword MajorTopicYN="N">Atomic structure</Keyword><Keyword MajorTopicYN="N">Gallium nitride</Keyword><Keyword MajorTopicYN="N">Quantitative STEM</Keyword><Keyword MajorTopicYN="N">Quantum wells</Keyword></KeywordList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2016</Year><Month>08</Month><Day>18</Day></PubMedPubDate><PubMedPubDate PubStatus="revised"><Year>2017</Year><Month>01</Month><Day>10</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2017</Year><Month>01</Month><Day>22</Day></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2017</Year><Month>2</Month><Day>16</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2017</Year><Month>2</Month><Day>16</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2017</Year><Month>2</Month><Day>16</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">28196629</ArticleId><ArticleId IdType="pii">S0304-3991(17)30048-7</ArticleId><ArticleId IdType="doi">10.1016/j.ultramic.2017.01.019</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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