Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
Identifieur interne : 000C90 ( Pmc/Curation ); précédent : 000C89; suivant : 000C91Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
Auteurs : Sumin Choi ; David J. Rogers [France] ; Eric V. Sandana [France] ; Philippe Bove [France] ; Ferechteh H. Teherani [France] ; Christian Nenstiel [Allemagne] ; Axel Hoffmann [Allemagne] ; Ryan Mcclintock [États-Unis] ; Manijeh Razeghi [États-Unis] ; David Look [États-Unis] ; Angus Gentle ; Matthew R. Phillips ; Cuong Ton-ThatSource :
- Scientific Reports [ 2045-2322 ] ; 2017.
Abstract
We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV
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DOI: 10.1038/s41598-017-07568-z
PubMed: 28784987
PubMed Central: 5547142
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Sumin Choi<affiliation><nlm:aff id="Aff1"><institution-wrap><institution-id institution-id-type="ISNI">0000 0004 1936 7611</institution-id><institution-id institution-id-type="GRID">grid.117476.2</institution-id><institution>School of Mathematical and Physical Science, University of Technology Sydney,</institution></institution-wrap>Broadway, PO Box 123, NSW 2007 Australia</nlm:aff><wicri:noCountry code="subfield">NSW 2007 Australia</wicri:noCountry></affiliation><affiliation><nlm:aff id="Aff1"><institution-wrap><institution-id institution-id-type="ISNI">0000 0004 1936 7611</institution-id><institution-id institution-id-type="GRID">grid.117476.2</institution-id><institution>School of Mathematical and Physical Science, University of Technology Sydney,</institution></institution-wrap>Broadway, PO Box 123, NSW 2007 Australia</nlm:aff><wicri:noCountry code="subfield">NSW 2007 Australia</wicri:noCountry></affiliation><affiliation><nlm:aff id="Aff1"><institution-wrap><institution-id institution-id-type="ISNI">0000 0004 1936 7611</institution-id><institution-id institution-id-type="GRID">grid.117476.2</institution-id><institution>School of Mathematical and Physical Science, University of Technology Sydney,</institution></institution-wrap>Broadway, PO Box 123, NSW 2007 Australia</nlm:aff><wicri:noCountry code="subfield">NSW 2007 Australia</wicri:noCountry></affiliation><affiliation><nlm:aff id="Aff1"><institution-wrap><institution-id institution-id-type="ISNI">0000 0004 1936 7611</institution-id><institution-id institution-id-type="GRID">grid.117476.2</institution-id><institution>School of Mathematical and Physical Science, University of Technology Sydney,</institution></institution-wrap>Broadway, PO Box 123, NSW 2007 Australia</nlm:aff><wicri:noCountry code="subfield">NSW 2007 Australia</wicri:noCountry></affiliation>Le document en format XML
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Rogers</name><affiliation wicri:level="1"><nlm:aff id="Aff2">Nanovation, 8 Route de Chevreuse, 78117 Châteaufort, France</nlm:aff><country xml:lang="fr">France</country><wicri:regionArea>Nanovation, 8 Route de Chevreuse, 78117 Châteaufort</wicri:regionArea></affiliation></author><author><name sortKey="Sandana, Eric V" sort="Sandana, Eric V" uniqKey="Sandana E" first="Eric V." last="Sandana">Eric V. Sandana</name><affiliation wicri:level="1"><nlm:aff id="Aff2">Nanovation, 8 Route de Chevreuse, 78117 Châteaufort, France</nlm:aff><country xml:lang="fr">France</country><wicri:regionArea>Nanovation, 8 Route de Chevreuse, 78117 Châteaufort</wicri:regionArea></affiliation></author><author><name sortKey="Bove, Philippe" sort="Bove, Philippe" uniqKey="Bove P" first="Philippe" last="Bove">Philippe Bove</name><affiliation wicri:level="1"><nlm:aff id="Aff2">Nanovation, 8 Route de Chevreuse, 78117 Châteaufort, France</nlm:aff><country xml:lang="fr">France</country><wicri:regionArea>Nanovation, 8 Route de Chevreuse, 78117 Châteaufort</wicri:regionArea></affiliation></author><author><name sortKey="Teherani, Ferechteh H" sort="Teherani, Ferechteh H" uniqKey="Teherani F" first="Ferechteh H." last="Teherani">Ferechteh H. Teherani</name><affiliation wicri:level="1"><nlm:aff id="Aff2">Nanovation, 8 Route de Chevreuse, 78117 Châteaufort, France</nlm:aff><country xml:lang="fr">France</country><wicri:regionArea>Nanovation, 8 Route de Chevreuse, 78117 Châteaufort</wicri:regionArea></affiliation></author><author><name sortKey="Nenstiel, Christian" sort="Nenstiel, Christian" uniqKey="Nenstiel C" first="Christian" last="Nenstiel">Christian Nenstiel</name><affiliation wicri:level="1"><nlm:aff id="Aff3"><institution-wrap><institution-id institution-id-type="ISNI">0000 0001 2292 8254</institution-id><institution-id institution-id-type="GRID">grid.6734.6</institution-id><institution>Institut für Festkörperphysik, Technische Universität Berlin,</institution></institution-wrap>10623 Berlin, Germany</nlm:aff><country xml:lang="fr">Allemagne</country><wicri:regionArea>10623 Berlin</wicri:regionArea></affiliation></author><author><name sortKey="Hoffmann, Axel" sort="Hoffmann, Axel" uniqKey="Hoffmann A" first="Axel" last="Hoffmann">Axel Hoffmann</name><affiliation wicri:level="1"><nlm:aff id="Aff3"><institution-wrap><institution-id institution-id-type="ISNI">0000 0001 2292 8254</institution-id><institution-id institution-id-type="GRID">grid.6734.6</institution-id><institution>Institut für Festkörperphysik, Technische Universität Berlin,</institution></institution-wrap>10623 Berlin, Germany</nlm:aff><country xml:lang="fr">Allemagne</country><wicri:regionArea>10623 Berlin</wicri:regionArea></affiliation></author><author><name sortKey="Mcclintock, Ryan" sort="Mcclintock, Ryan" uniqKey="Mcclintock R" first="Ryan" last="Mcclintock">Ryan Mcclintock</name><affiliation wicri:level="2"><nlm:aff id="Aff4"><institution-wrap><institution-id institution-id-type="ISNI">0000 0001 2299 3507</institution-id><institution-id institution-id-type="GRID">grid.16753.36</institution-id><institution>Center for Quantum Devices, ECE Department, Northwestern University,</institution></institution-wrap>Evanston, IL 60208 USA</nlm:aff><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Razeghi, Manijeh" sort="Razeghi, Manijeh" uniqKey="Razeghi M" first="Manijeh" last="Razeghi">Manijeh Razeghi</name><affiliation wicri:level="2"><nlm:aff id="Aff4"><institution-wrap><institution-id institution-id-type="ISNI">0000 0001 2299 3507</institution-id><institution-id institution-id-type="GRID">grid.16753.36</institution-id><institution>Center for Quantum Devices, ECE Department, Northwestern University,</institution></institution-wrap>Evanston, IL 60208 USA</nlm:aff><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Look, David" sort="Look, David" uniqKey="Look D" first="David" last="Look">David Look</name><affiliation wicri:level="2"><nlm:aff id="Aff5"><institution-wrap><institution-id institution-id-type="ISNI">0000 0004 1936 7937</institution-id><institution-id institution-id-type="GRID">grid.268333.f</institution-id><institution>Semiconductor Research Centre, Wright State University,</institution></institution-wrap>Dayton, OH 45435 USA</nlm:aff><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Dayton</wicri:cityArea></affiliation></author><author><name sortKey="Gentle, Angus" sort="Gentle, Angus" uniqKey="Gentle A" first="Angus" last="Gentle">Angus Gentle</name><affiliation><nlm:aff id="Aff1"><institution-wrap><institution-id institution-id-type="ISNI">0000 0004 1936 7611</institution-id><institution-id institution-id-type="GRID">grid.117476.2</institution-id><institution>School of Mathematical and Physical Science, University of Technology Sydney,</institution></institution-wrap>Broadway, PO Box 123, NSW 2007 Australia</nlm:aff><wicri:noCountry code="subfield">NSW 2007 Australia</wicri:noCountry></affiliation></author><author><name sortKey="Phillips, Matthew R" sort="Phillips, Matthew R" uniqKey="Phillips M" first="Matthew R." last="Phillips">Matthew R. Phillips</name><affiliation><nlm:aff id="Aff1"><institution-wrap><institution-id institution-id-type="ISNI">0000 0004 1936 7611</institution-id><institution-id institution-id-type="GRID">grid.117476.2</institution-id><institution>School of Mathematical and Physical Science, University of Technology Sydney,</institution></institution-wrap>Broadway, PO Box 123, NSW 2007 Australia</nlm:aff><wicri:noCountry code="subfield">NSW 2007 Australia</wicri:noCountry></affiliation></author><author><name sortKey="Ton That, Cuong" sort="Ton That, Cuong" uniqKey="Ton That C" first="Cuong" last="Ton-That">Cuong Ton-That</name><affiliation><nlm:aff id="Aff1"><institution-wrap><institution-id institution-id-type="ISNI">0000 0004 1936 7611</institution-id><institution-id institution-id-type="GRID">grid.117476.2</institution-id><institution>School of Mathematical and Physical Science, University of Technology Sydney,</institution></institution-wrap>Broadway, PO Box 123, NSW 2007 Australia</nlm:aff><wicri:noCountry code="subfield">NSW 2007 Australia</wicri:noCountry></affiliation></author></analytic><series><title level="j">Scientific Reports</title><idno type="eISSN">2045-2322</idno><imprint><date when="2017">2017</date></imprint></series></biblStruct></sourceDesc></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en"><p id="Par1">We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al<sub>2</sub>O<sub>3</sub> film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV <italic>H</italic>-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.</p></div></front><back><div1 type="bibliography"><listBibl><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct><analytic><author><name sortKey="Romero, Mf" uniqKey="Romero M">MF Romero</name></author></analytic></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct><analytic><author><name sortKey="Ton That, C" uniqKey="Ton That C">C Ton-That</name></author><author><name sortKey="Weston, L" uniqKey="Weston L">L Weston</name></author><author><name sortKey="Phillips, Mr" uniqKey="Phillips M">MR Phillips</name></author></analytic></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct><analytic><author><name sortKey="Yin, Ht" uniqKey="Yin H">HT Yin</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Martinez Criado, G" uniqKey="Martinez Criado G">G Martinez-Criado</name></author></analytic></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct></biblStruct><biblStruct><analytic><author><name sortKey="Wang, P" uniqKey="Wang P">P Wang</name></author></analytic></biblStruct><biblStruct></biblStruct></listBibl></div1></back></TEI><pmc article-type="research-article"><pmc-dir>properties open_access</pmc-dir>
<front><journal-meta><journal-id journal-id-type="nlm-ta">Sci Rep</journal-id><journal-id journal-id-type="iso-abbrev">Sci Rep</journal-id><journal-title-group><journal-title>Scientific Reports</journal-title></journal-title-group><issn pub-type="epub">2045-2322</issn><publisher><publisher-name>Nature Publishing Group UK</publisher-name><publisher-loc>London</publisher-loc></publisher></journal-meta><article-meta><article-id pub-id-type="pmid">28784987</article-id><article-id pub-id-type="pmc">5547142</article-id><article-id pub-id-type="publisher-id">7568</article-id><article-id pub-id-type="doi">10.1038/s41598-017-07568-z</article-id><article-categories><subj-group subj-group-type="heading"><subject>Article</subject></subj-group></article-categories><title-group><article-title>Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface</article-title></title-group><contrib-group><contrib contrib-type="author"><name><surname>Choi</surname><given-names>Sumin</given-names></name><xref ref-type="aff" rid="Aff1">1</xref></contrib><contrib contrib-type="author"><name><surname>Rogers</surname><given-names>David J.</given-names></name><xref ref-type="aff" rid="Aff2">2</xref></contrib><contrib contrib-type="author"><name><surname>Sandana</surname><given-names>Eric V.</given-names></name><xref ref-type="aff" rid="Aff2">2</xref></contrib><contrib contrib-type="author"><name><surname>Bove</surname><given-names>Philippe</given-names></name><xref ref-type="aff" rid="Aff2">2</xref></contrib><contrib contrib-type="author"><name><surname>Teherani</surname><given-names>Ferechteh H.</given-names></name><xref ref-type="aff" rid="Aff2">2</xref></contrib><contrib contrib-type="author"><name><surname>Nenstiel</surname><given-names>Christian</given-names></name><xref ref-type="aff" rid="Aff3">3</xref></contrib><contrib contrib-type="author"><name><surname>Hoffmann</surname><given-names>Axel</given-names></name><xref ref-type="aff" rid="Aff3">3</xref></contrib><contrib contrib-type="author"><name><surname>McClintock</surname><given-names>Ryan</given-names></name><xref ref-type="aff" rid="Aff4">4</xref></contrib><contrib contrib-type="author"><name><surname>Razeghi</surname><given-names>Manijeh</given-names></name><xref ref-type="aff" rid="Aff4">4</xref></contrib><contrib contrib-type="author"><name><surname>Look</surname><given-names>David</given-names></name><xref ref-type="aff" rid="Aff5">5</xref></contrib><contrib contrib-type="author"><name><surname>Gentle</surname><given-names>Angus</given-names></name><xref ref-type="aff" rid="Aff1">1</xref></contrib><contrib contrib-type="author"><name><surname>Phillips</surname><given-names>Matthew R.</given-names></name><xref ref-type="aff" rid="Aff1">1</xref></contrib><contrib contrib-type="author" corresp="yes"><name><surname>Ton-That</surname><given-names>Cuong</given-names></name><address><email>cuong.ton-that@uts.edu.au</email></address><xref ref-type="aff" rid="Aff1">1</xref></contrib><aff id="Aff1"><label>1</label><institution-wrap><institution-id institution-id-type="ISNI">0000 0004 1936 7611</institution-id><institution-id institution-id-type="GRID">grid.117476.2</institution-id><institution>School of Mathematical and Physical Science, University of Technology Sydney,</institution></institution-wrap>Broadway, PO Box 123, NSW 2007 Australia</aff><aff id="Aff2"><label>2</label>Nanovation, 8 Route de Chevreuse, 78117 Châteaufort, France</aff><aff id="Aff3"><label>3</label><institution-wrap><institution-id institution-id-type="ISNI">0000 0001 2292 8254</institution-id><institution-id institution-id-type="GRID">grid.6734.6</institution-id><institution>Institut für Festkörperphysik, Technische Universität Berlin,</institution></institution-wrap>10623 Berlin, Germany</aff><aff id="Aff4"><label>4</label><institution-wrap><institution-id institution-id-type="ISNI">0000 0001 2299 3507</institution-id><institution-id institution-id-type="GRID">grid.16753.36</institution-id><institution>Center for Quantum Devices, ECE Department, Northwestern University,</institution></institution-wrap>Evanston, IL 60208 USA</aff><aff id="Aff5"><label>5</label><institution-wrap><institution-id institution-id-type="ISNI">0000 0004 1936 7937</institution-id><institution-id institution-id-type="GRID">grid.268333.f</institution-id><institution>Semiconductor Research Centre, Wright State University,</institution></institution-wrap>Dayton, OH 45435 USA</aff></contrib-group><pub-date pub-type="epub"><day>7</day><month>8</month><year>2017</year></pub-date><pub-date pub-type="pmc-release"><day>7</day><month>8</month><year>2017</year></pub-date><pub-date pub-type="collection"><year>2017</year></pub-date><volume>7</volume><elocation-id>7457</elocation-id><history><date date-type="received"><day>31</day><month>10</month><year>2016</year></date><date date-type="accepted"><day>28</day><month>6</month><year>2017</year></date></history><permissions><copyright-statement>© The Author(s) 2017</copyright-statement><license license-type="OpenAccess"><license-p><bold>Open Access</bold> This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit <ext-link ext-link-type="uri" xlink:href="http://creativecommons.org/licenses/by/4.0/">http://creativecommons.org/licenses/by/4.0/</ext-link>.</license-p></license></permissions><abstract id="Abs1"><p id="Par1">We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al<sub>2</sub>O<sub>3</sub> film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV <italic>H</italic>-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.</p></abstract><custom-meta-group><custom-meta><meta-name>issue-copyright-statement</meta-name><meta-value>© The Author(s) 2017</meta-value></custom-meta></custom-meta-group></article-meta></front></pmc></record>Pour manipuler ce document sous Unix (Dilib)
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