High sensitivity optical position sensitive detectors fabricated from high resistivity substrates
Identifieur interne :
002E65 ( PascalFrancis/Curation );
précédent :
002E64;
suivant :
002E66
High sensitivity optical position sensitive detectors fabricated from high resistivity substrates
Auteurs : J. Henry [
Australie] ;
J. Livingstone [
Australie]
Source :
-
Proceedings of SPIE - The International Society for Optical Engineering [ 0277-786X ] ; 2008.
RBID : Pascal:08-0527902
Descripteurs français
English descriptors
Abstract
Position sensitive detectors (PSDs) comprise optical sensors used in applications such as robotic vision, machine tool alignment and other precision measurements. This paper will report on a series of Schottky Barrier crystalline silicon devices which display marked advantages including rapid response times, easier fabrication techniques and high sensitivities compared with most other research work now being concentrated on PECVD amorphous silicon structures. In this work, results from devices fabricated from substrates with a range of resistivities and various Schottky metals are presented. Some of the sensitivity measurements obtained are better than 25 mV/mm which are some of the best sensitivities reported for Schottky barrier crystalline PSDs. These results were obtained coincidentally with excellent linearities. Devices were also tested under a range of light beams including very low broadband white light levels of 0.1 mW up to 10mW. The highest and most linear outputs occurred under different conditions for each substrate resistivity and Schottky metal. Also observed were the different effects that background illumination had on each set of devices, the biggest effect being on the highest resistivity devices.
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C01 | 01 | | ENG | @0 Position sensitive detectors (PSDs) comprise optical sensors used in applications such as robotic vision, machine tool alignment and other precision measurements. This paper will report on a series of Schottky Barrier crystalline silicon devices which display marked advantages including rapid response times, easier fabrication techniques and high sensitivities compared with most other research work now being concentrated on PECVD amorphous silicon structures. In this work, results from devices fabricated from substrates with a range of resistivities and various Schottky metals are presented. Some of the sensitivity measurements obtained are better than 25 mV/mm which are some of the best sensitivities reported for Schottky barrier crystalline PSDs. These results were obtained coincidentally with excellent linearities. Devices were also tested under a range of light beams including very low broadband white light levels of 0.1 mW up to 10mW. The highest and most linear outputs occurred under different conditions for each substrate resistivity and Schottky metal. Also observed were the different effects that background illumination had on each set of devices, the biggest effect being on the highest resistivity devices. |
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C03 | 02 | 3 | FRE | @0 Détecteur positionnement @5 11 |
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C03 | 02 | 3 | ENG | @0 Position sensitive detectors @5 11 |
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C03 | 03 | 3 | FRE | @0 Capteur optique @5 12 |
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C03 | 03 | 3 | ENG | @0 Optical sensors @5 12 |
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C03 | 04 | 3 | FRE | @0 Etude expérimentale @5 29 |
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C03 | 05 | 3 | FRE | @0 Procédé fabrication @5 30 |
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C03 | 05 | 3 | ENG | @0 Manufacturing processes @5 30 |
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C03 | 06 | X | FRE | @0 Faisceau optique @5 37 |
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C03 | 06 | X | SPA | @0 Haz óptico @5 37 |
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C03 | 07 | X | FRE | @0 Lumière blanche @5 38 |
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C03 | 07 | X | ENG | @0 White light @5 38 |
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C03 | 07 | X | SPA | @0 Luz blanca @5 38 |
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N82 | | | | @1 OTO |
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|
pR |
A30 | 01 | 1 | ENG | @1 Optical sensors @3 Strasbourg FRA @4 2008 |
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Le document en format XML
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