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High sensitivity optical position sensitive detectors fabricated from high resistivity substrates

Identifieur interne : 002E65 ( PascalFrancis/Curation ); précédent : 002E64; suivant : 002E66

High sensitivity optical position sensitive detectors fabricated from high resistivity substrates

Auteurs : J. Henry [Australie] ; J. Livingstone [Australie]

Source :

RBID : Pascal:08-0527902

Descripteurs français

English descriptors

Abstract

Position sensitive detectors (PSDs) comprise optical sensors used in applications such as robotic vision, machine tool alignment and other precision measurements. This paper will report on a series of Schottky Barrier crystalline silicon devices which display marked advantages including rapid response times, easier fabrication techniques and high sensitivities compared with most other research work now being concentrated on PECVD amorphous silicon structures. In this work, results from devices fabricated from substrates with a range of resistivities and various Schottky metals are presented. Some of the sensitivity measurements obtained are better than 25 mV/mm which are some of the best sensitivities reported for Schottky barrier crystalline PSDs. These results were obtained coincidentally with excellent linearities. Devices were also tested under a range of light beams including very low broadband white light levels of 0.1 mW up to 10mW. The highest and most linear outputs occurred under different conditions for each substrate resistivity and Schottky metal. Also observed were the different effects that background illumination had on each set of devices, the biggest effect being on the highest resistivity devices.
pA  
A01 01  1    @0 0277-786X
A05       @2 7003
A08 01  1  ENG  @1 High sensitivity optical position sensitive detectors fabricated from high resistivity substrates
A09 01  1  ENG  @1 Optical sensors 2008 : 7-10 April 2008, Strasbourg, France
A11 01  1    @1 HENRY (J.)
A11 02  1    @1 LIVINGSTONE (J.)
A12 01  1    @1 BERGHMANS (Francis) @9 ed.
A14 01      @1 School of Electrical Electronic and Computer Engineering The University of Western Australia 35 Stirling Highway @2 Crawley, 6009, Western Australia @3 AUS @Z 1 aut. @Z 2 aut.
A18 01  1    @1 Society of photo-optical instrumentation engineers Europe @3 INC @9 org-cong.
A18 02  1    @1 SPIE @3 USA @9 org-cong.
A18 03  1    @1 Alsace international @3 FRA @9 org-cong.
A18 04  1    @1 Association française des industries de l'optique et de la photonique @3 FRA @9 org-cong.
A20       @2 70030K.1-70030K.8
A21       @1 2008
A23 01      @0 ENG
A26 01      @0 0-8194-7201-8
A43 01      @1 INIST @2 21760 @5 354000172877650160
A44       @0 0000 @1 © 2008 INIST-CNRS. All rights reserved.
A45       @0 15 ref.
A47 01  1    @0 08-0527902
A60       @1 P @2 C
A61       @0 A
A64 01  1    @0 Proceedings of SPIE - The International Society for Optical Engineering
A66 01      @0 USA
C01 01    ENG  @0 Position sensitive detectors (PSDs) comprise optical sensors used in applications such as robotic vision, machine tool alignment and other precision measurements. This paper will report on a series of Schottky Barrier crystalline silicon devices which display marked advantages including rapid response times, easier fabrication techniques and high sensitivities compared with most other research work now being concentrated on PECVD amorphous silicon structures. In this work, results from devices fabricated from substrates with a range of resistivities and various Schottky metals are presented. Some of the sensitivity measurements obtained are better than 25 mV/mm which are some of the best sensitivities reported for Schottky barrier crystalline PSDs. These results were obtained coincidentally with excellent linearities. Devices were also tested under a range of light beams including very low broadband white light levels of 0.1 mW up to 10mW. The highest and most linear outputs occurred under different conditions for each substrate resistivity and Schottky metal. Also observed were the different effects that background illumination had on each set of devices, the biggest effect being on the highest resistivity devices.
C02 01  3    @0 001B00A30C
C02 02  3    @0 001B00G07D
C03 01  3  FRE  @0 Vision @5 03
C03 01  3  ENG  @0 Vision @5 03
C03 02  3  FRE  @0 Détecteur positionnement @5 11
C03 02  3  ENG  @0 Position sensitive detectors @5 11
C03 03  3  FRE  @0 Capteur optique @5 12
C03 03  3  ENG  @0 Optical sensors @5 12
C03 04  3  FRE  @0 Etude expérimentale @5 29
C03 04  3  ENG  @0 Experimental study @5 29
C03 05  3  FRE  @0 Procédé fabrication @5 30
C03 05  3  ENG  @0 Manufacturing processes @5 30
C03 06  X  FRE  @0 Faisceau optique @5 37
C03 06  X  ENG  @0 Optical beam @5 37
C03 06  X  SPA  @0 Haz óptico @5 37
C03 07  X  FRE  @0 Lumière blanche @5 38
C03 07  X  ENG  @0 White light @5 38
C03 07  X  SPA  @0 Luz blanca @5 38
C03 08  3  FRE  @0 Méthode mesure @5 61
C03 08  3  ENG  @0 Measuring methods @5 61
C03 09  3  FRE  @0 0130C @4 INC @5 83
C03 10  3  FRE  @0 0707D @4 INC @5 91
N21       @1 343
N44 01      @1 OTO
N82       @1 OTO
pR  
A30 01  1  ENG  @1 Optical sensors @3 Strasbourg FRA @4 2008

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<record>
<TEI>
<teiHeader>
<fileDesc>
<titleStmt>
<title xml:lang="en" level="a">High sensitivity optical position sensitive detectors fabricated from high resistivity substrates</title>
<author>
<name sortKey="Henry, J" sort="Henry, J" uniqKey="Henry J" first="J." last="Henry">J. Henry</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>School of Electrical Electronic and Computer Engineering The University of Western Australia 35 Stirling Highway</s1>
<s2>Crawley, 6009, Western Australia</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Australie</country>
</affiliation>
</author>
<author>
<name sortKey="Livingstone, J" sort="Livingstone, J" uniqKey="Livingstone J" first="J." last="Livingstone">J. Livingstone</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>School of Electrical Electronic and Computer Engineering The University of Western Australia 35 Stirling Highway</s1>
<s2>Crawley, 6009, Western Australia</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Australie</country>
</affiliation>
</author>
</titleStmt>
<publicationStmt>
<idno type="wicri:source">INIST</idno>
<idno type="inist">08-0527902</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 08-0527902 INIST</idno>
<idno type="RBID">Pascal:08-0527902</idno>
<idno type="wicri:Area/PascalFrancis/Corpus">003188</idno>
<idno type="wicri:Area/PascalFrancis/Curation">002E65</idno>
</publicationStmt>
<sourceDesc>
<biblStruct>
<analytic>
<title xml:lang="en" level="a">High sensitivity optical position sensitive detectors fabricated from high resistivity substrates</title>
<author>
<name sortKey="Henry, J" sort="Henry, J" uniqKey="Henry J" first="J." last="Henry">J. Henry</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>School of Electrical Electronic and Computer Engineering The University of Western Australia 35 Stirling Highway</s1>
<s2>Crawley, 6009, Western Australia</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Australie</country>
</affiliation>
</author>
<author>
<name sortKey="Livingstone, J" sort="Livingstone, J" uniqKey="Livingstone J" first="J." last="Livingstone">J. Livingstone</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>School of Electrical Electronic and Computer Engineering The University of Western Australia 35 Stirling Highway</s1>
<s2>Crawley, 6009, Western Australia</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Australie</country>
</affiliation>
</author>
</analytic>
<series>
<title level="j" type="main">Proceedings of SPIE - The International Society for Optical Engineering</title>
<idno type="ISSN">0277-786X</idno>
<imprint>
<date when="2008">2008</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt>
<title level="j" type="main">Proceedings of SPIE - The International Society for Optical Engineering</title>
<idno type="ISSN">0277-786X</idno>
</seriesStmt>
</fileDesc>
<profileDesc>
<textClass>
<keywords scheme="KwdEn" xml:lang="en">
<term>Experimental study</term>
<term>Manufacturing processes</term>
<term>Measuring methods</term>
<term>Optical beam</term>
<term>Optical sensors</term>
<term>Position sensitive detectors</term>
<term>Vision</term>
<term>White light</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>Vision</term>
<term>Détecteur positionnement</term>
<term>Capteur optique</term>
<term>Etude expérimentale</term>
<term>Procédé fabrication</term>
<term>Faisceau optique</term>
<term>Lumière blanche</term>
<term>Méthode mesure</term>
<term>0130C</term>
<term>0707D</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front>
<div type="abstract" xml:lang="en">Position sensitive detectors (PSDs) comprise optical sensors used in applications such as robotic vision, machine tool alignment and other precision measurements. This paper will report on a series of Schottky Barrier crystalline silicon devices which display marked advantages including rapid response times, easier fabrication techniques and high sensitivities compared with most other research work now being concentrated on PECVD amorphous silicon structures. In this work, results from devices fabricated from substrates with a range of resistivities and various Schottky metals are presented. Some of the sensitivity measurements obtained are better than 25 mV/mm which are some of the best sensitivities reported for Schottky barrier crystalline PSDs. These results were obtained coincidentally with excellent linearities. Devices were also tested under a range of light beams including very low broadband white light levels of 0.1 mW up to 10mW. The highest and most linear outputs occurred under different conditions for each substrate resistivity and Schottky metal. Also observed were the different effects that background illumination had on each set of devices, the biggest effect being on the highest resistivity devices.</div>
</front>
</TEI>
<inist>
<standard h6="B">
<pA>
<fA01 i1="01" i2="1">
<s0>0277-786X</s0>
</fA01>
<fA05>
<s2>7003</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG">
<s1>High sensitivity optical position sensitive detectors fabricated from high resistivity substrates</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG">
<s1>Optical sensors 2008 : 7-10 April 2008, Strasbourg, France</s1>
</fA09>
<fA11 i1="01" i2="1">
<s1>HENRY (J.)</s1>
</fA11>
<fA11 i1="02" i2="1">
<s1>LIVINGSTONE (J.)</s1>
</fA11>
<fA12 i1="01" i2="1">
<s1>BERGHMANS (Francis)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01">
<s1>School of Electrical Electronic and Computer Engineering The University of Western Australia 35 Stirling Highway</s1>
<s2>Crawley, 6009, Western Australia</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1">
<s1>Society of photo-optical instrumentation engineers Europe</s1>
<s3>INC</s3>
<s9>org-cong.</s9>
</fA18>
<fA18 i1="02" i2="1">
<s1>SPIE</s1>
<s3>USA</s3>
<s9>org-cong.</s9>
</fA18>
<fA18 i1="03" i2="1">
<s1>Alsace international</s1>
<s3>FRA</s3>
<s9>org-cong.</s9>
</fA18>
<fA18 i1="04" i2="1">
<s1>Association française des industries de l'optique et de la photonique</s1>
<s3>FRA</s3>
<s9>org-cong.</s9>
</fA18>
<fA20>
<s2>70030K.1-70030K.8</s2>
</fA20>
<fA21>
<s1>2008</s1>
</fA21>
<fA23 i1="01">
<s0>ENG</s0>
</fA23>
<fA26 i1="01">
<s0>0-8194-7201-8</s0>
</fA26>
<fA43 i1="01">
<s1>INIST</s1>
<s2>21760</s2>
<s5>354000172877650160</s5>
</fA43>
<fA44>
<s0>0000</s0>
<s1>© 2008 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45>
<s0>15 ref.</s0>
</fA45>
<fA47 i1="01" i2="1">
<s0>08-0527902</s0>
</fA47>
<fA60>
<s1>P</s1>
<s2>C</s2>
</fA60>
<fA61>
<s0>A</s0>
</fA61>
<fA64 i1="01" i2="1">
<s0>Proceedings of SPIE - The International Society for Optical Engineering</s0>
</fA64>
<fA66 i1="01">
<s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG">
<s0>Position sensitive detectors (PSDs) comprise optical sensors used in applications such as robotic vision, machine tool alignment and other precision measurements. This paper will report on a series of Schottky Barrier crystalline silicon devices which display marked advantages including rapid response times, easier fabrication techniques and high sensitivities compared with most other research work now being concentrated on PECVD amorphous silicon structures. In this work, results from devices fabricated from substrates with a range of resistivities and various Schottky metals are presented. Some of the sensitivity measurements obtained are better than 25 mV/mm which are some of the best sensitivities reported for Schottky barrier crystalline PSDs. These results were obtained coincidentally with excellent linearities. Devices were also tested under a range of light beams including very low broadband white light levels of 0.1 mW up to 10mW. The highest and most linear outputs occurred under different conditions for each substrate resistivity and Schottky metal. Also observed were the different effects that background illumination had on each set of devices, the biggest effect being on the highest resistivity devices.</s0>
</fC01>
<fC02 i1="01" i2="3">
<s0>001B00A30C</s0>
</fC02>
<fC02 i1="02" i2="3">
<s0>001B00G07D</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE">
<s0>Vision</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG">
<s0>Vision</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE">
<s0>Détecteur positionnement</s0>
<s5>11</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG">
<s0>Position sensitive detectors</s0>
<s5>11</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE">
<s0>Capteur optique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG">
<s0>Optical sensors</s0>
<s5>12</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE">
<s0>Etude expérimentale</s0>
<s5>29</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG">
<s0>Experimental study</s0>
<s5>29</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE">
<s0>Procédé fabrication</s0>
<s5>30</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG">
<s0>Manufacturing processes</s0>
<s5>30</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE">
<s0>Faisceau optique</s0>
<s5>37</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG">
<s0>Optical beam</s0>
<s5>37</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA">
<s0>Haz óptico</s0>
<s5>37</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE">
<s0>Lumière blanche</s0>
<s5>38</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG">
<s0>White light</s0>
<s5>38</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA">
<s0>Luz blanca</s0>
<s5>38</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE">
<s0>Méthode mesure</s0>
<s5>61</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG">
<s0>Measuring methods</s0>
<s5>61</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE">
<s0>0130C</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE">
<s0>0707D</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fN21>
<s1>343</s1>
</fN21>
<fN44 i1="01">
<s1>OTO</s1>
</fN44>
<fN82>
<s1>OTO</s1>
</fN82>
</pA>
<pR>
<fA30 i1="01" i2="1" l="ENG">
<s1>Optical sensors</s1>
<s3>Strasbourg FRA</s3>
<s4>2008</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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