Si-based near infrared photodetectors operating at 10Gbit/s
Identifieur interne :
002115 ( PascalFrancis/Curation );
précédent :
002114;
suivant :
002116
Si-based near infrared photodetectors operating at 10Gbit/s
Auteurs : Lorenzo Colace [
Italie] ;
Michele Balbi [
Italie] ;
Gianlorenzo Masini [
Italie] ;
Gaetano Assanto [
Italie] ;
Hsin-Chiao Luan [
États-Unis] ;
Lionel C. Kimerling [
États-Unis]
Source :
-
Journal of luminescence [ 0022-2313 ] ; 2006.
RBID : Pascal:07-0004302
Descripteurs français
English descriptors
Abstract
We report on fast p-i-n near infrared photodetectors in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600°C followed by thermal annealing at 900°C. We also verified that bypassing the thermal treatment did not have significant effects on the resulting crystal quality, allowing to considerably reducing the thermal budget hence simplify the integration with silicon. We demonstrate the operation of photodiodes with responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 μm, respectively, as well as open-eye diagrams at 10 Gbit/s.
| pA |
| A01 | 01 | 1 | | @0 0022-2313 |
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| A02 | 01 | | | @0 JLUMA8 |
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| A03 | | 1 | | @0 J. lumin. |
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| A05 | | | | @2 121 |
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| A06 | | | | @2 2 |
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| A08 | 01 | 1 | ENG | @1 Si-based near infrared photodetectors operating at 10Gbit/s |
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| A09 | 01 | 1 | ENG | @1 Proceedings of the E-MRS 2006 Symposium D on Silicon-Based Photonics held in Nice, France, May 29-June 2, 2006 |
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| A11 | 01 | 1 | | @1 COLACE (Lorenzo) |
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| A11 | 02 | 1 | | @1 BALBI (Michele) |
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| A11 | 03 | 1 | | @1 MASINI (Gianlorenzo) |
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| A11 | 04 | 1 | | @1 ASSANTO (Gaetano) |
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| A11 | 05 | 1 | | @1 LUAN (Hsin-Chiao) |
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| A11 | 06 | 1 | | @1 KIMERLING (Lionel C.) |
|---|
| A12 | 01 | 1 | | @1 LINNROS (Jan) @9 ed. |
|---|
| A12 | 02 | 1 | | @1 GREGORKIEWICZ (Tom) @9 ed. |
|---|
| A12 | 03 | 1 | | @1 ELLIMAN (Robert) @9 ed. |
|---|
| A12 | 04 | 1 | | @1 KIMERLING (Lionel) @9 ed. |
|---|
| A14 | 01 | | | @1 NooEL-Nonlinear Optics and OptoElectronics Lab, INFM-CNISM and Department of Electronic Engineering, University "Roma Tre" Via delta Vasca Navale 84 @2 00146 Rome @3 ITA @Z 1 aut. @Z 2 aut. @Z 3 aut. @Z 4 aut. |
|---|
| A14 | 02 | | | @1 Department of Materials Science & Engineering, Massachusetts Institute of Technology @2 Cambridge MA 0213 @3 USA @Z 5 aut. @Z 6 aut. |
|---|
| A15 | 01 | | | @1 Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229 @2 16440 Kista-Stockholm @3 SWE @Z 1 aut. |
|---|
| A15 | 02 | | | @1 Van der Waals - Zeeman Institute, university of Amsterdam, Valckenierstraat 65 @2 1018 XE Amsterdam @3 NLD @Z 2 aut. |
|---|
| A15 | 03 | | | @1 Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, The Australian National University @2 Canberra ACT 0200 @3 AUS @Z 3 aut. |
|---|
| A15 | 04 | | | @1 Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue @2 Cambridge, MA 02139-4307 @3 USA @Z 4 aut. |
|---|
| A18 | 01 | 1 | | @1 European Materials Research Society (EMRS) @2 67037 Strasbourg @3 FRA @9 org-cong. |
|---|
| A20 | | | | @1 413-416 |
|---|
| A21 | | | | @1 2006 |
|---|
| A23 | 01 | | | @0 ENG |
|---|
| A43 | 01 | | | @1 INIST @2 14666 @5 354000143060630520 |
|---|
| A44 | | | | @0 0000 @1 © 2007 INIST-CNRS. All rights reserved. |
|---|
| A45 | | | | @0 6 ref. |
|---|
| A47 | 01 | 1 | | @0 07-0004302 |
|---|
| A60 | | | | @1 P @2 C |
|---|
| A61 | | | | @0 A |
|---|
| A64 | 01 | 1 | | @0 Journal of luminescence |
|---|
| A66 | 01 | | | @0 NLD |
|---|
| C01 | 01 | | ENG | @0 We report on fast p-i-n near infrared photodetectors in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600°C followed by thermal annealing at 900°C. We also verified that bypassing the thermal treatment did not have significant effects on the resulting crystal quality, allowing to considerably reducing the thermal budget hence simplify the integration with silicon. We demonstrate the operation of photodiodes with responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 μm, respectively, as well as open-eye diagrams at 10 Gbit/s. |
|---|
| C02 | 01 | X | | @0 001D03F15 |
|---|
| C03 | 01 | X | FRE | @0 Rayonnement IR proche @5 02 |
|---|
| C03 | 01 | X | ENG | @0 Near infrared radiation @5 02 |
|---|
| C03 | 01 | X | SPA | @0 Radiación infrarroja cercana @5 02 |
|---|
| C03 | 02 | X | FRE | @0 Photodétecteur @5 03 |
|---|
| C03 | 02 | X | ENG | @0 Photodetector @5 03 |
|---|
| C03 | 02 | X | SPA | @0 Fotodetector @5 03 |
|---|
| C03 | 03 | X | FRE | @0 Dépôt chimique phase vapeur @5 04 |
|---|
| C03 | 03 | X | ENG | @0 Chemical vapor deposition @5 04 |
|---|
| C03 | 03 | X | SPA | @0 Depósito químico fase vapor @5 04 |
|---|
| C03 | 04 | X | FRE | @0 Recuit thermique @5 05 |
|---|
| C03 | 04 | X | ENG | @0 Thermal annealing @5 05 |
|---|
| C03 | 04 | X | SPA | @0 Recocido térmico @5 05 |
|---|
| C03 | 05 | X | FRE | @0 Photodiode @5 07 |
|---|
| C03 | 05 | X | ENG | @0 Photodiode @5 07 |
|---|
| C03 | 05 | X | SPA | @0 Fotodiodo @5 07 |
|---|
| C03 | 06 | X | FRE | @0 Diode couche intrinsèque @5 11 |
|---|
| C03 | 06 | X | ENG | @0 p i n diode @5 11 |
|---|
| C03 | 06 | X | SPA | @0 Diodo capa intrínseca @5 11 |
|---|
| C03 | 07 | X | FRE | @0 Silicium @2 NC @5 15 |
|---|
| C03 | 07 | X | ENG | @0 Silicon @2 NC @5 15 |
|---|
| C03 | 07 | X | SPA | @0 Silicio @2 NC @5 15 |
|---|
| C03 | 08 | X | FRE | @0 Germanium @2 NC @5 16 |
|---|
| C03 | 08 | X | ENG | @0 Germanium @2 NC @5 16 |
|---|
| C03 | 08 | X | SPA | @0 Germanio @2 NC @5 16 |
|---|
| C03 | 09 | X | FRE | @0 Si @4 INC @5 52 |
|---|
| C03 | 10 | X | FRE | @0 8560G @4 INC @5 56 |
|---|
| N21 | | | | @1 008 |
|---|
|
|---|
| pR |
| A30 | 01 | 1 | ENG | @1 E-MRS 2006 Symposium D on Silicon-based photonics @3 Nice FRA @4 2006-05-29 |
|---|
|
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Le document en format XML
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</publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Si-based near infrared photodetectors operating at 10Gbit/s</title>
<author><name sortKey="Colace, Lorenzo" sort="Colace, Lorenzo" uniqKey="Colace L" first="Lorenzo" last="Colace">Lorenzo Colace</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NooEL-Nonlinear Optics and OptoElectronics Lab, INFM-CNISM and Department of Electronic Engineering, University "Roma Tre" Via delta Vasca Navale 84</s1>
<s2>00146 Rome</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14><country>Italie</country>
</affiliation><author><name sortKey="Balbi, Michele" sort="Balbi, Michele" uniqKey="Balbi M" first="Michele" last="Balbi">Michele Balbi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NooEL-Nonlinear Optics and OptoElectronics Lab, INFM-CNISM and Department of Electronic Engineering, University "Roma Tre" Via delta Vasca Navale 84</s1>
<s2>00146 Rome</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14><country>Italie</country>
</affiliation><author><name sortKey="Masini, Gianlorenzo" sort="Masini, Gianlorenzo" uniqKey="Masini G" first="Gianlorenzo" last="Masini">Gianlorenzo Masini</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NooEL-Nonlinear Optics and OptoElectronics Lab, INFM-CNISM and Department of Electronic Engineering, University "Roma Tre" Via delta Vasca Navale 84</s1>
<s2>00146 Rome</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14><country>Italie</country>
</affiliation><author><name sortKey="Assanto, Gaetano" sort="Assanto, Gaetano" uniqKey="Assanto G" first="Gaetano" last="Assanto">Gaetano Assanto</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NooEL-Nonlinear Optics and OptoElectronics Lab, INFM-CNISM and Department of Electronic Engineering, University "Roma Tre" Via delta Vasca Navale 84</s1>
<s2>00146 Rome</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14><country>Italie</country>
</affiliation><author><name sortKey="Luan, Hsin Chiao" sort="Luan, Hsin Chiao" uniqKey="Luan H" first="Hsin-Chiao" last="Luan">Hsin-Chiao Luan</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science & Engineering, Massachusetts Institute of Technology</s1>
<s2>Cambridge MA 0213</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14><country>États-Unis</country>
</affiliation><author><name sortKey="Kimerling, Lionel C" sort="Kimerling, Lionel C" uniqKey="Kimerling L" first="Lionel C." last="Kimerling">Lionel C. Kimerling</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science & Engineering, Massachusetts Institute of Technology</s1>
<s2>Cambridge MA 0213</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14><country>États-Unis</country>
</affiliation><series><title level="j" type="main">Journal of luminescence</title>
<title level="j" type="abbreviated">J. lumin.</title>
<idno type="ISSN">0022-2313</idno>
<imprint><date when="2006">2006</date>
</imprint><seriesStmt><title level="j" type="main">Journal of luminescence</title>
<title level="j" type="abbreviated">J. lumin.</title>
<idno type="ISSN">0022-2313</idno>
</seriesStmt><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical vapor deposition</term>
<term>Germanium</term>
<term>Near infrared radiation</term>
<term>Photodetector</term>
<term>Photodiode</term>
<term>Silicon</term>
<term>Thermal annealing</term>
<term>p i n diode</term>
</keywords><keywords scheme="Pascal" xml:lang="fr"><term>Rayonnement IR proche</term>
<term>Photodétecteur</term>
<term>Dépôt chimique phase vapeur</term>
<term>Recuit thermique</term>
<term>Photodiode</term>
<term>Diode couche intrinsèque</term>
<term>Silicium</term>
<term>Germanium</term>
<term>Si</term>
<term>8560G</term>
</keywords><front><div type="abstract" xml:lang="en">We report on fast p-i-n near infrared photodetectors in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600°C followed by thermal annealing at 900°C. We also verified that bypassing the thermal treatment did not have significant effects on the resulting crystal quality, allowing to considerably reducing the thermal budget hence simplify the integration with silicon. We demonstrate the operation of photodiodes with responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 μm, respectively, as well as open-eye diagrams at 10 Gbit/s.</div>
</front><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-2313</s0>
</fA01><fA02 i1="01"><s0>JLUMA8</s0>
</fA02><fA03 i2="1"><s0>J. lumin.</s0>
</fA03><fA05><s2>121</s2>
</fA05><fA08 i1="01" i2="1" l="ENG"><s1>Si-based near infrared photodetectors operating at 10Gbit/s</s1>
</fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the E-MRS 2006 Symposium D on Silicon-Based Photonics held in Nice, France, May 29-June 2, 2006</s1>
</fA09><fA11 i1="01" i2="1"><s1>COLACE (Lorenzo)</s1>
</fA11><fA11 i1="02" i2="1"><s1>BALBI (Michele)</s1>
</fA11><fA11 i1="03" i2="1"><s1>MASINI (Gianlorenzo)</s1>
</fA11><fA11 i1="04" i2="1"><s1>ASSANTO (Gaetano)</s1>
</fA11><fA11 i1="05" i2="1"><s1>LUAN (Hsin-Chiao)</s1>
</fA11><fA11 i1="06" i2="1"><s1>KIMERLING (Lionel C.)</s1>
</fA11><fA12 i1="01" i2="1"><s1>LINNROS (Jan)</s1>
<s9>ed.</s9>
</fA12><fA12 i1="02" i2="1"><s1>GREGORKIEWICZ (Tom)</s1>
<s9>ed.</s9>
</fA12><fA12 i1="03" i2="1"><s1>ELLIMAN (Robert)</s1>
<s9>ed.</s9>
</fA12><fA12 i1="04" i2="1"><s1>KIMERLING (Lionel)</s1>
<s9>ed.</s9>
</fA12><fA14 i1="01"><s1>NooEL-Nonlinear Optics and OptoElectronics Lab, INFM-CNISM and Department of Electronic Engineering, University "Roma Tre" Via delta Vasca Navale 84</s1>
<s2>00146 Rome</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14><fA14 i1="02"><s1>Department of Materials Science & Engineering, Massachusetts Institute of Technology</s1>
<s2>Cambridge MA 0213</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14><fA15 i1="01"><s1>Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229</s1>
<s2>16440 Kista-Stockholm</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
</fA15><fA15 i1="02"><s1>Van der Waals - Zeeman Institute, university of Amsterdam, Valckenierstraat 65</s1>
<s2>1018 XE Amsterdam</s2>
<s3>NLD</s3>
<sZ>2 aut.</sZ>
</fA15><fA15 i1="03"><s1>Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, The Australian National University</s1>
<s2>Canberra ACT 0200</s2>
<s3>AUS</s3>
<sZ>3 aut.</sZ>
</fA15><fA15 i1="04"><s1>Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue</s1>
<s2>Cambridge, MA 02139-4307</s2>
<s3>USA</s3>
<sZ>4 aut.</sZ>
</fA15><fA18 i1="01" i2="1"><s1>European Materials Research Society (EMRS)</s1>
<s2>67037 Strasbourg</s2>
<s3>FRA</s3>
<s9>org-cong.</s9>
</fA18><fA20><s1>413-416</s1>
</fA20><fA21><s1>2006</s1>
</fA21><fA23 i1="01"><s0>ENG</s0>
</fA23><fA43 i1="01"><s1>INIST</s1>
<s2>14666</s2>
<s5>354000143060630520</s5>
</fA43><fA44><s0>0000</s0>
<s1>© 2007 INIST-CNRS. All rights reserved.</s1>
</fA44><fA45><s0>6 ref.</s0>
</fA45><fA47 i1="01" i2="1"><s0>07-0004302</s0>
</fA47><fA60><s1>P</s1>
<s2>C</s2>
</fA60><fA64 i1="01" i2="1"><s0>Journal of luminescence</s0>
</fA64><fA66 i1="01"><s0>NLD</s0>
</fA66><fC01 i1="01" l="ENG"><s0>We report on fast p-i-n near infrared photodetectors in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600°C followed by thermal annealing at 900°C. We also verified that bypassing the thermal treatment did not have significant effects on the resulting crystal quality, allowing to considerably reducing the thermal budget hence simplify the integration with silicon. We demonstrate the operation of photodiodes with responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 μm, respectively, as well as open-eye diagrams at 10 Gbit/s.</s0>
</fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0>
</fC02><fC03 i1="01" i2="X" l="FRE"><s0>Rayonnement IR proche</s0>
<s5>02</s5>
</fC03><fC03 i1="01" i2="X" l="ENG"><s0>Near infrared radiation</s0>
<s5>02</s5>
</fC03><fC03 i1="01" i2="X" l="SPA"><s0>Radiación infrarroja cercana</s0>
<s5>02</s5>
</fC03><fC03 i1="02" i2="X" l="FRE"><s0>Photodétecteur</s0>
<s5>03</s5>
</fC03><fC03 i1="02" i2="X" l="ENG"><s0>Photodetector</s0>
<s5>03</s5>
</fC03><fC03 i1="02" i2="X" l="SPA"><s0>Fotodetector</s0>
<s5>03</s5>
</fC03><fC03 i1="03" i2="X" l="FRE"><s0>Dépôt chimique phase vapeur</s0>
<s5>04</s5>
</fC03><fC03 i1="03" i2="X" l="ENG"><s0>Chemical vapor deposition</s0>
<s5>04</s5>
</fC03><fC03 i1="03" i2="X" l="SPA"><s0>Depósito químico fase vapor</s0>
<s5>04</s5>
</fC03><fC03 i1="04" i2="X" l="FRE"><s0>Recuit thermique</s0>
<s5>05</s5>
</fC03><fC03 i1="04" i2="X" l="ENG"><s0>Thermal annealing</s0>
<s5>05</s5>
</fC03><fC03 i1="04" i2="X" l="SPA"><s0>Recocido térmico</s0>
<s5>05</s5>
</fC03><fC03 i1="05" i2="X" l="FRE"><s0>Photodiode</s0>
<s5>07</s5>
</fC03><fC03 i1="05" i2="X" l="ENG"><s0>Photodiode</s0>
<s5>07</s5>
</fC03><fC03 i1="05" i2="X" l="SPA"><s0>Fotodiodo</s0>
<s5>07</s5>
</fC03><fC03 i1="06" i2="X" l="FRE"><s0>Diode couche intrinsèque</s0>
<s5>11</s5>
</fC03><fC03 i1="06" i2="X" l="ENG"><s0>p i n diode</s0>
<s5>11</s5>
</fC03><fC03 i1="06" i2="X" l="SPA"><s0>Diodo capa intrínseca</s0>
<s5>11</s5>
</fC03><fC03 i1="07" i2="X" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03><fC03 i1="07" i2="X" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03><fC03 i1="07" i2="X" l="SPA"><s0>Silicio</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03><fC03 i1="08" i2="X" l="FRE"><s0>Germanium</s0>
<s2>NC</s2>
<s5>16</s5>
</fC03><fC03 i1="08" i2="X" l="ENG"><s0>Germanium</s0>
<s2>NC</s2>
<s5>16</s5>
</fC03><fC03 i1="08" i2="X" l="SPA"><s0>Germanio</s0>
<s2>NC</s2>
<s5>16</s5>
</fC03><fC03 i1="09" i2="X" l="FRE"><s0>Si</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03><fC03 i1="10" i2="X" l="FRE"><s0>8560G</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03><fN21><s1>008</s1>
</fN21><pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS 2006 Symposium D on Silicon-based photonics</s1>
<s3>Nice FRA</s3>
<s4>2006-05-29</s4>
</fA30>
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