AustralieFrV1, PascalFrancis, Corpus, bibRecord, 003F87

Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization

Identifieur interne : 003F87 ( PascalFrancis/Corpus ); précédent : 003F86; suivant : 003F88

Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization

Auteurs : I. Sychugov ; J. Lu ; N. Elfström ; J. Linnros

Source :

Journal of luminescence [ 0022-2313 ] ; 2006.

RBID : Pascal:07-0004288

Descripteurs français

Pascal (Inist)
- Formation image, Microscopie électronique transmission, Lithographie faisceau électron, Gravure plasma, Oxydation, Photoluminescence, Dispositif CCD, Technologie faisceau ion focalisé, Caractérisation, Méthode étude, Système couplé, Silicium, Point quantique, Nanocristal, Si, 8107B, 7867B.

English descriptors

KwdEn :
- Characterization, Charge coupled devices, Electron beam lithography, Focused ion beam technology, Imaging, Investigation method, Nanocrystal, Oxidation, Paired system, Photoluminescence, Plasma etching, Quantum dots, Silicon, Transmission electron microscopy.

Abstract

Individual silicon quantum dots were fabricated by electron-beam lithography, plasma etching and a two-step oxidation process. This enables photoluminescence (PL) from individual dots at various temperatures to be detected and spectrally resolved using a sensitive charge-coupled device camera-imaging system, as reported previously. The regular array-like arrangement of oxidized pillars containing individual nanocrystals, in principle, enables combined transmission electron microscopy (TEM) and low-temperature PL characterization of the same Si quantum dot. To this end, a technique employing focused ion beam was developed for preparation of the pillar/nanocrystal of interest for TEM. It is shown that silicon quantum dots of several nanometers in size can be characterized using such a method.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

A01	`01`	`1`		`@0 0022-2313`
A02	`01`			`@0 JLUMA8`
A03		`1`		`@0 J. lumin.`
A05				`@2 121`
A06				`@2 2`
A08	`01`	`1`	`ENG`	`@1 Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization`
A09	`01`	`1`	`ENG`	`@1 Proceedings of the E-MRS 2006 Symposium D on Silicon-Based Photonics held in Nice, France, May 29-June 2, 2006`
A11	`01`	`1`		`@1 SYCHUGOV (I.)`
A11	`02`	`1`		`@1 LU (J.)`
A11	`03`	`1`		`@1 ELFSTRÖM (N.)`
A11	`04`	`1`		`@1 LINNROS (J.)`
A12	`01`	`1`		`@1 LINNROS (Jan) @9 ed.`
A12	`02`	`1`		`@1 GREGORKIEWICZ (Tom) @9 ed.`
A12	`03`	`1`		`@1 ELLIMAN (Robert) @9 ed.`
A12	`04`	`1`		`@1 KIMERLING (Lionel) @9 ed.`
A14	`01`			`@1 Laboratory of Material and Semiconductor Physics, Royal Institute of Technology @2 16440 Stockholm @3 SWE @Z 1 aut. @Z 3 aut. @Z 4 aut.`
A14	`02`			`@1 Angstrom Microstructure Laboratory, Uppsala University @2 75121 Uppsala @3 SWE @Z 2 aut.`
A15	`01`			`@1 Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229 @2 16440 Kista-Stockholm @3 SWE @Z 1 aut.`
A15	`02`			`@1 Van der Waals - Zeeman Institute, university of Amsterdam, Valckenierstraat 65 @2 1018 XE Amsterdam @3 NLD @Z 2 aut.`
A15	`03`			`@1 Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, The Australian National University @2 Canberra ACT 0200 @3 AUS @Z 3 aut.`
A15	`04`			`@1 Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue @2 Cambridge, MA 02139-4307 @3 USA @Z 4 aut.`
A18	`01`	`1`		`@1 European Materials Research Society (EMRS) @2 67037 Strasbourg @3 FRA @9 org-cong.`
A20				`@1 353-355`
A21				`@1 2006`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 14666 @5 354000143060630380`
A44				`@0 0000 @1 © 2007 INIST-CNRS. All rights reserved.`
A45				`@0 8 ref.`
A47	`01`	`1`		`@0 07-0004288`
A60				`@1 P @2 C`
A61				`@0 A`
A64	`01`	`1`		`@0 Journal of luminescence`
A66	`01`			`@0 NLD`
C01	`01`		`ENG`	@0 Individual silicon quantum dots were fabricated by electron-beam lithography, plasma etching and a two-step oxidation process. This enables photoluminescence (PL) from individual dots at various temperatures to be detected and spectrally resolved using a sensitive charge-coupled device camera-imaging system, as reported previously. The regular array-like arrangement of oxidized pillars containing individual nanocrystals, in principle, enables combined transmission electron microscopy (TEM) and low-temperature PL characterization of the same Si quantum dot. To this end, a technique employing focused ion beam was developed for preparation of the pillar/nanocrystal of interest for TEM. It is shown that silicon quantum dots of several nanometers in size can be characterized using such a method.
C02	`01`	`3`		`@0 001B80A07B`
C02	`02`	`3`		`@0 001B70H67B`
C03	`01`	`3`	`FRE`	`@0 Formation image @5 02`
C03	`01`	`3`	`ENG`	`@0 Imaging @5 02`
C03	`02`	`3`	`FRE`	`@0 Microscopie électronique transmission @5 03`
C03	`02`	`3`	`ENG`	`@0 Transmission electron microscopy @5 03`
C03	`03`	`3`	`FRE`	`@0 Lithographie faisceau électron @5 04`
C03	`03`	`3`	`ENG`	`@0 Electron beam lithography @5 04`
C03	`04`	`X`	`FRE`	`@0 Gravure plasma @5 05`
C03	`04`	`X`	`ENG`	`@0 Plasma etching @5 05`
C03	`04`	`X`	`SPA`	`@0 Grabado plasma @5 05`
C03	`05`	`3`	`FRE`	`@0 Oxydation @5 06`
C03	`05`	`3`	`ENG`	`@0 Oxidation @5 06`
C03	`06`	`3`	`FRE`	`@0 Photoluminescence @5 07`
C03	`06`	`3`	`ENG`	`@0 Photoluminescence @5 07`
C03	`07`	`3`	`FRE`	`@0 Dispositif CCD @5 08`
C03	`07`	`3`	`ENG`	`@0 Charge coupled devices @5 08`
C03	`08`	`3`	`FRE`	`@0 Technologie faisceau ion focalisé @5 09`
C03	`08`	`3`	`ENG`	`@0 Focused ion beam technology @5 09`
C03	`09`	`X`	`FRE`	`@0 Caractérisation @5 11`
C03	`09`	`X`	`ENG`	`@0 Characterization @5 11`
C03	`09`	`X`	`SPA`	`@0 Caracterización @5 11`
C03	`10`	`X`	`FRE`	`@0 Méthode étude @5 12`
C03	`10`	`X`	`ENG`	`@0 Investigation method @5 12`
C03	`10`	`X`	`SPA`	`@0 Método estudio @5 12`
C03	`11`	`X`	`FRE`	`@0 Système couplé @5 13`
C03	`11`	`X`	`ENG`	`@0 Paired system @5 13`
C03	`11`	`X`	`SPA`	`@0 Sistema acoplado @5 13`
C03	`12`	`3`	`FRE`	`@0 Silicium @2 NC @5 15`
C03	`12`	`3`	`ENG`	`@0 Silicon @2 NC @5 15`
C03	`13`	`3`	`FRE`	`@0 Point quantique @5 16`
C03	`13`	`3`	`ENG`	`@0 Quantum dots @5 16`
C03	`14`	`X`	`FRE`	`@0 Nanocristal @5 17`
C03	`14`	`X`	`ENG`	`@0 Nanocrystal @5 17`
C03	`14`	`X`	`SPA`	`@0 Nanocristal @5 17`
C03	`15`	`3`	`FRE`	`@0 Si @4 INC @5 52`
C03	`16`	`3`	`FRE`	`@0 8107B @4 INC @5 60`
C03	`17`	`3`	`FRE`	`@0 7867B @4 INC @5 61`
N21				`@1 008`

A30	`01`	`1`	`ENG`	`@1 E-MRS 2006 Symposium D on Silicon-based photonics @3 Nice FRA @4 2006-05-29`

Format Inist (serveur)

NO :	PASCAL 07-0004288 INIST
ET :	Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization
AU :	SYCHUGOV (I.); LU (J.); ELFSTRÖM (N.); LINNROS (J.); LINNROS (Jan); GREGORKIEWICZ (Tom); ELLIMAN (Robert); KIMERLING (Lionel)
AF :	Laboratory of Material and Semiconductor Physics, Royal Institute of Technology/16440 Stockholm/Suède (1 aut., 3 aut., 4 aut.); Angstrom Microstructure Laboratory, Uppsala University/75121 Uppsala/Suède (2 aut.); Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229/16440 Kista-Stockholm/Suède (1 aut.); Van der Waals - Zeeman Institute, university of Amsterdam, Valckenierstraat 65/1018 XE Amsterdam/Pays-Bas (2 aut.); Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, The Australian National University/Canberra ACT 0200/Australie (3 aut.); Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue/Cambridge, MA 02139-4307/Etats-Unis (4 aut.)
DT :	Publication en série; Congrès; Niveau analytique
SO :	Journal of luminescence; ISSN 0022-2313; Coden JLUMA8; Pays-Bas; Da. 2006; Vol. 121; No. 2; Pp. 353-355; Bibl. 8 ref.
LA :	Anglais
EA :	Individual silicon quantum dots were fabricated by electron-beam lithography, plasma etching and a two-step oxidation process. This enables photoluminescence (PL) from individual dots at various temperatures to be detected and spectrally resolved using a sensitive charge-coupled device camera-imaging system, as reported previously. The regular array-like arrangement of oxidized pillars containing individual nanocrystals, in principle, enables combined transmission electron microscopy (TEM) and low-temperature PL characterization of the same Si quantum dot. To this end, a technique employing focused ion beam was developed for preparation of the pillar/nanocrystal of interest for TEM. It is shown that silicon quantum dots of several nanometers in size can be characterized using such a method.
CC :	001B80A07B; 001B70H67B
FD :	Formation image; Microscopie électronique transmission; Lithographie faisceau électron; Gravure plasma; Oxydation; Photoluminescence; Dispositif CCD; Technologie faisceau ion focalisé; Caractérisation; Méthode étude; Système couplé; Silicium; Point quantique; Nanocristal; Si; 8107B; 7867B
ED :	Imaging; Transmission electron microscopy; Electron beam lithography; Plasma etching; Oxidation; Photoluminescence; Charge coupled devices; Focused ion beam technology; Characterization; Investigation method; Paired system; Silicon; Quantum dots; Nanocrystal
SD :	Grabado plasma; Caracterización; Método estudio; Sistema acoplado; Nanocristal
LO :	INIST-14666.354000143060630380
ID :	07-0004288

Links to Exploration step

Pascal:07-0004288

Le document en format XML

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<front><div type="abstract" xml:lang="en">Individual silicon quantum dots were fabricated by electron-beam lithography, plasma etching and a two-step oxidation process. This enables photoluminescence (PL) from individual dots at various temperatures to be detected and spectrally resolved using a sensitive charge-coupled device camera-imaging system, as reported previously. The regular array-like arrangement of oxidized pillars containing individual nanocrystals, in principle, enables combined transmission electron microscopy (TEM) and low-temperature PL characterization of the same Si quantum dot. To this end, a technique employing focused ion beam was developed for preparation of the pillar/nanocrystal of interest for TEM. It is shown that silicon quantum dots of several nanometers in size can be characterized using such a method.</div>
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<fA15 i1="03"><s1>Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, The Australian National University</s1>
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<fA15 i1="04"><s1>Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue</s1>
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<fA18 i1="01" i2="1"><s1>European Materials Research Society (EMRS)</s1>
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<fC01 i1="01" l="ENG"><s0>Individual silicon quantum dots were fabricated by electron-beam lithography, plasma etching and a two-step oxidation process. This enables photoluminescence (PL) from individual dots at various temperatures to be detected and spectrally resolved using a sensitive charge-coupled device camera-imaging system, as reported previously. The regular array-like arrangement of oxidized pillars containing individual nanocrystals, in principle, enables combined transmission electron microscopy (TEM) and low-temperature PL characterization of the same Si quantum dot. To this end, a technique employing focused ion beam was developed for preparation of the pillar/nanocrystal of interest for TEM. It is shown that silicon quantum dots of several nanometers in size can be characterized using such a method.</s0>
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<fC03 i1="06" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Dispositif CCD</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Charge coupled devices</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Technologie faisceau ion focalisé</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Focused ion beam technology</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Caractérisation</s0>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Characterization</s0>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Caracterización</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Méthode étude</s0>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Investigation method</s0>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Método estudio</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Système couplé</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Paired system</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Sistema acoplado</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Nanocristal</s0>
<s5>17</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Nanocrystal</s0>
<s5>17</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Nanocristal</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Si</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>60</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>7867B</s0>
<s4>INC</s4>
<s5>61</s5>
</fC03>
<fN21><s1>008</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS 2006 Symposium D on Silicon-based photonics</s1>
<s3>Nice FRA</s3>
<s4>2006-05-29</s4>
</fA30>
</pR>
</standard>
<server><NO>PASCAL 07-0004288 INIST</NO>
<ET>Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization</ET>
<AU>SYCHUGOV (I.); LU (J.); ELFSTRÖM (N.); LINNROS (J.); LINNROS (Jan); GREGORKIEWICZ (Tom); ELLIMAN (Robert); KIMERLING (Lionel)</AU>
<AF>Laboratory of Material and Semiconductor Physics, Royal Institute of Technology/16440 Stockholm/Suède (1 aut., 3 aut., 4 aut.); Angstrom Microstructure Laboratory, Uppsala University/75121 Uppsala/Suède (2 aut.); Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229/16440 Kista-Stockholm/Suède (1 aut.); Van der Waals - Zeeman Institute, university of Amsterdam, Valckenierstraat 65/1018 XE Amsterdam/Pays-Bas (2 aut.); Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, The Australian National University/Canberra ACT 0200/Australie (3 aut.); Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue/Cambridge, MA 02139-4307/Etats-Unis (4 aut.)</AF>
<DT>Publication en série; Congrès; Niveau analytique</DT>
<SO>Journal of luminescence; ISSN 0022-2313; Coden JLUMA8; Pays-Bas; Da. 2006; Vol. 121; No. 2; Pp. 353-355; Bibl. 8 ref.</SO>
<LA>Anglais</LA>
<EA>Individual silicon quantum dots were fabricated by electron-beam lithography, plasma etching and a two-step oxidation process. This enables photoluminescence (PL) from individual dots at various temperatures to be detected and spectrally resolved using a sensitive charge-coupled device camera-imaging system, as reported previously. The regular array-like arrangement of oxidized pillars containing individual nanocrystals, in principle, enables combined transmission electron microscopy (TEM) and low-temperature PL characterization of the same Si quantum dot. To this end, a technique employing focused ion beam was developed for preparation of the pillar/nanocrystal of interest for TEM. It is shown that silicon quantum dots of several nanometers in size can be characterized using such a method.</EA>
<CC>001B80A07B; 001B70H67B</CC>
<FD>Formation image; Microscopie électronique transmission; Lithographie faisceau électron; Gravure plasma; Oxydation; Photoluminescence; Dispositif CCD; Technologie faisceau ion focalisé; Caractérisation; Méthode étude; Système couplé; Silicium; Point quantique; Nanocristal; Si; 8107B; 7867B</FD>
<ED>Imaging; Transmission electron microscopy; Electron beam lithography; Plasma etching; Oxidation; Photoluminescence; Charge coupled devices; Focused ion beam technology; Characterization; Investigation method; Paired system; Silicon; Quantum dots; Nanocrystal</ED>
<SD>Grabado plasma; Caracterización; Método estudio; Sistema acoplado; Nanocristal</SD>
<LO>INIST-14666.354000143060630380</LO>
<ID>07-0004288</ID>
</server>
</inist>
</record>

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Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization

Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization

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