AustralieFrV1, PascalFrancis, Corpus, bibRecord, 002B78

Femtosecond laser direct processing in wet and dry silica glass

Identifieur interne : 002B78 ( PascalFrancis/Corpus ); précédent : 002B77; suivant : 002B79

Femtosecond laser direct processing in wet and dry silica glass

Auteurs : M. Lancry ; N. Groothoff ; S. Guizard ; W. Yang ; B. Poumellec ; P. G. Kazansky ; J. Canning

Source :

Journal of non-crystalline solids [ 0022-3093 ] ; 2009.

RBID : Pascal:09-0398614

Descripteurs français

Pascal (Inist)
- Traitement par laser, Endommagement, Piégeage porteur charge, Interaction rayonnement matière, Rayonnement laser, Optique ultrarapide, Plasma électronique, Silice, Verre, Gel silice.

English descriptors

KwdEn :
- Charge carrier trapping, Damage, Electron plasma, Glass, Laser assisted processing, Laser radiation, Radiation matter interactions, Silica, Silica gel, Ultrafast optics.

Abstract

The infrared femtosecond laser damage threshold is found to be independent of OH content in pure silica glass. Additionally, the density and the mean trapping time of electrons excited in the conduction band are also found to be independent on OH concentration.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

A01	`01`	`1`		`@0 0022-3093`
A02	`01`			`@0 JNCSBJ`
A03		`1`		`@0 J. non-cryst. solids`
A05				`@2 355`
A06				`@2 18-21`
A08	`01`	`1`	`ENG`	`@1 Femtosecond laser direct processing in wet and dry silica glass`
A09	`01`	`1`	`ENG`	`@1 7th Symposium on SiO₂, Advanced Dielectrics and Related Devices`
A11	`01`	`1`		`@1 LANCRY (M.)`
A11	`02`	`1`		`@1 GROOTHOFF (N.)`
A11	`03`	`1`		`@1 GUIZARD (S.)`
A11	`04`	`1`		`@1 YANG (W.)`
A11	`05`	`1`		`@1 POUMELLEC (B.)`
A11	`06`	`1`		`@1 KAZANSKY (P. G.)`
A11	`07`	`1`		`@1 CANNING (J.)`
A12	`01`	`1`		`@1 OUERDANE (Youcef) @9 ed.`
A12	`02`	`1`		`@1 CANNAS (Marco) @9 ed.`
A12	`03`	`1`		`@1 BOUKENTER (Aziz) @9 ed.`
A14	`01`			`@1 ICMMO, UMR CNRS-UPS 8182, Bdt. 410, Université de Paris Sud 11 @2 91405 Orsay @3 FRA @Z 1 aut. @Z 5 aut.`
A14	`02`			`@1 iPL. School of Chemistry. University of Sydney @2 NSW 2006 @3 AUS`
A14	`03`			`@1 Laboratoire des Solides lrradiés/CEA lRAMIS, Ecole Polytechnique @2 Palaiseau @3 FRA @Z 3 aut.`
A14	`04`			`@1 Optoelectronics Research Centre, University of Southampton @2 Southampton. 5017 18J @3 GBR @Z 4 aut. @Z 6 aut.`
A15	`01`			`@1 Université de Lyon @2 42023 Saint-Etienne @3 FRA @Z 1 aut. @Z 3 aut.`
A15	`02`			`@1 CNRS UMR 5516, Laboratoire Hubert Curien @2 42000 Saint-Etienne @3 FRA @Z 1 aut. @Z 3 aut.`
A15	`03`			`@1 Université Jean Monnet, 18 rue du Pr. Benoît Lauras @2 42000 Saint-Etienne @3 FRA @Z 1 aut. @Z 3 aut.`
A15	`04`			`@1 Dipartimento di Scienze Fisiche ed Astronomiche, Università degli Studi di Palermo, Via Archirafi 36 @2 90123 Palermo @3 ITA @Z 2 aut.`
A20				`@1 1057-1061`
A21				`@1 2009`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 14572 @5 354000187250520110`
A44				`@0 0000 @1 © 2009 INIST-CNRS. All rights reserved.`
A45				`@0 24 ref.`
A47	`01`	`1`		`@0 09-0398614`
A60				`@1 P @2 C`
A61				`@0 A`
A64	`01`	`1`		`@0 Journal of non-crystalline solids`
A66	`01`			`@0 NLD`
C01	`01`		`ENG`	`@0 The infrared femtosecond laser damage threshold is found to be independent of OH content in pure silica glass. Additionally, the density and the mean trapping time of electrons excited in the conduction band are also found to be independent on OH concentration.`
C02	`01`	`3`		`@0 001B70H47`
C02	`02`	`3`		`@0 001B70H45`
C03	`01`	`3`	`FRE`	`@0 Traitement par laser @5 02`
C03	`01`	`3`	`ENG`	`@0 Laser assisted processing @5 02`
C03	`02`	`3`	`FRE`	`@0 Endommagement @5 03`
C03	`02`	`3`	`ENG`	`@0 Damage @5 03`
C03	`03`	`X`	`FRE`	`@0 Piégeage porteur charge @5 04`
C03	`03`	`X`	`ENG`	`@0 Charge carrier trapping @5 04`
C03	`03`	`X`	`SPA`	`@0 Captura portador carga @5 04`
C03	`04`	`3`	`FRE`	`@0 Interaction rayonnement matière @5 05`
C03	`04`	`3`	`ENG`	`@0 Radiation matter interactions @5 05`
C03	`05`	`3`	`FRE`	`@0 Rayonnement laser @5 06`
C03	`05`	`3`	`ENG`	`@0 Laser radiation @5 06`
C03	`06`	`3`	`FRE`	`@0 Optique ultrarapide @5 07`
C03	`06`	`3`	`ENG`	`@0 Ultrafast optics @5 07`
C03	`07`	`X`	`FRE`	`@0 Plasma électronique @5 09`
C03	`07`	`X`	`ENG`	`@0 Electron plasma @5 09`
C03	`07`	`X`	`SPA`	`@0 Plasma electrónico @5 09`
C03	`08`	`3`	`FRE`	`@0 Silice @2 NK @5 15`
C03	`08`	`3`	`ENG`	`@0 Silica @2 NK @5 15`
C03	`09`	`3`	`FRE`	`@0 Verre @5 16`
C03	`09`	`3`	`ENG`	`@0 Glass @5 16`
C03	`10`	`3`	`FRE`	`@0 Gel silice @5 17`
C03	`10`	`3`	`ENG`	`@0 Silica gel @5 17`
N21				`@1 292`

A30	`01`	`1`	`ENG`	`@1 Symposium on SiO₂, Advanced Dielectrics and Related Devices @2 7 @3 Saint-Etienne FRA @4 2008-06-30`

Format Inist (serveur)

NO :	PASCAL 09-0398614 INIST
ET :	Femtosecond laser direct processing in wet and dry silica glass
AU :	LANCRY (M.); GROOTHOFF (N.); GUIZARD (S.); YANG (W.); POUMELLEC (B.); KAZANSKY (P. G.); CANNING (J.); OUERDANE (Youcef); CANNAS (Marco); BOUKENTER (Aziz)
AF :	ICMMO, UMR CNRS-UPS 8182, Bdt. 410, Université de Paris Sud 11/91405 Orsay/France (1 aut., 5 aut.); iPL. School of Chemistry. University of Sydney/NSW 2006/Australie; Laboratoire des Solides lrradiés/CEA lRAMIS, Ecole Polytechnique/Palaiseau/France (3 aut.); Optoelectronics Research Centre, University of Southampton/Southampton. 5017 18J/Royaume-Uni (4 aut., 6 aut.); Université de Lyon/42023 Saint-Etienne/France (1 aut., 3 aut.); CNRS UMR 5516, Laboratoire Hubert Curien/42000 Saint-Etienne/France (1 aut., 3 aut.); Université Jean Monnet, 18 rue du Pr. Benoît Lauras/42000 Saint-Etienne/France (1 aut., 3 aut.); Dipartimento di Scienze Fisiche ed Astronomiche, Università degli Studi di Palermo, Via Archirafi 36/90123 Palermo/Italie (2 aut.)
DT :	Publication en série; Congrès; Niveau analytique
SO :	Journal of non-crystalline solids; ISSN 0022-3093; Coden JNCSBJ; Pays-Bas; Da. 2009; Vol. 355; No. 18-21; Pp. 1057-1061; Bibl. 24 ref.
LA :	Anglais
EA :	The infrared femtosecond laser damage threshold is found to be independent of OH content in pure silica glass. Additionally, the density and the mean trapping time of electrons excited in the conduction band are also found to be independent on OH concentration.
CC :	001B70H47; 001B70H45
FD :	Traitement par laser; Endommagement; Piégeage porteur charge; Interaction rayonnement matière; Rayonnement laser; Optique ultrarapide; Plasma électronique; Silice; Verre; Gel silice
ED :	Laser assisted processing; Damage; Charge carrier trapping; Radiation matter interactions; Laser radiation; Ultrafast optics; Electron plasma; Silica; Glass; Silica gel
SD :	Captura portador carga; Plasma electrónico
LO :	INIST-14572.354000187250520110
ID :	09-0398614

Links to Exploration step

Pascal:09-0398614

Le document en format XML

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<term>Laser assisted processing</term>
<term>Laser radiation</term>
<term>Radiation matter interactions</term>
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<term>Silica gel</term>
<term>Ultrafast optics</term>
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<term>Rayonnement laser</term>
<term>Optique ultrarapide</term>
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<front><div type="abstract" xml:lang="en">The infrared femtosecond laser damage threshold is found to be independent of OH content in pure silica glass. Additionally, the density and the mean trapping time of electrons excited in the conduction band are also found to be independent on OH concentration.</div>
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<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3093</s0>
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<fA09 i1="01" i2="1" l="ENG"><s1>7th Symposium on SiO<sub>2</sub>
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<fA11 i1="06" i2="1"><s1>KAZANSKY (P. G.)</s1>
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<fA12 i1="01" i2="1"><s1>OUERDANE (Youcef)</s1>
<s9>ed.</s9>
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<fA12 i1="03" i2="1"><s1>BOUKENTER (Aziz)</s1>
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<fA14 i1="01"><s1>ICMMO, UMR CNRS-UPS 8182, Bdt. 410, Université de Paris Sud 11</s1>
<s2>91405 Orsay</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
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<fA14 i1="02"><s1>iPL. School of Chemistry. University of Sydney</s1>
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<fA14 i1="04"><s1>Optoelectronics Research Centre, University of Southampton</s1>
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<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
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<fA15 i1="01"><s1>Université de Lyon</s1>
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<fA15 i1="02"><s1>CNRS UMR 5516, Laboratoire Hubert Curien</s1>
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<sZ>3 aut.</sZ>
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<fA15 i1="04"><s1>Dipartimento di Scienze Fisiche ed Astronomiche, Università degli Studi di Palermo, Via Archirafi 36</s1>
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<fA60><s1>P</s1>
<s2>C</s2>
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<fA66 i1="01"><s0>NLD</s0>
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<fC01 i1="01" l="ENG"><s0>The infrared femtosecond laser damage threshold is found to be independent of OH content in pure silica glass. Additionally, the density and the mean trapping time of electrons excited in the conduction band are also found to be independent on OH concentration.</s0>
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<fC02 i1="02" i2="3"><s0>001B70H45</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Traitement par laser</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Laser assisted processing</s0>
<s5>02</s5>
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<fC03 i1="02" i2="3" l="FRE"><s0>Endommagement</s0>
<s5>03</s5>
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<fC03 i1="02" i2="3" l="ENG"><s0>Damage</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Piégeage porteur charge</s0>
<s5>04</s5>
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<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Captura portador carga</s0>
<s5>04</s5>
</fC03>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>09</s5>
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<s5>09</s5>
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<fC03 i1="07" i2="X" l="SPA"><s0>Plasma electrónico</s0>
<s5>09</s5>
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<s2>NK</s2>
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<s5>15</s5>
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<s5>16</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>Gel silice</s0>
<s5>17</s5>
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<fC03 i1="10" i2="3" l="ENG"><s0>Silica gel</s0>
<s5>17</s5>
</fC03>
<fN21><s1>292</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Symposium on SiO<sub>2</sub>
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<server><NO>PASCAL 09-0398614 INIST</NO>
<ET>Femtosecond laser direct processing in wet and dry silica glass</ET>
<AU>LANCRY (M.); GROOTHOFF (N.); GUIZARD (S.); YANG (W.); POUMELLEC (B.); KAZANSKY (P. G.); CANNING (J.); OUERDANE (Youcef); CANNAS (Marco); BOUKENTER (Aziz)</AU>
<AF>ICMMO, UMR CNRS-UPS 8182, Bdt. 410, Université de Paris Sud 11/91405 Orsay/France (1 aut., 5 aut.); iPL. School of Chemistry. University of Sydney/NSW 2006/Australie; Laboratoire des Solides lrradiés/CEA lRAMIS, Ecole Polytechnique/Palaiseau/France (3 aut.); Optoelectronics Research Centre, University of Southampton/Southampton. 5017 18J/Royaume-Uni (4 aut., 6 aut.); Université de Lyon/42023 Saint-Etienne/France (1 aut., 3 aut.); CNRS UMR 5516, Laboratoire Hubert Curien/42000 Saint-Etienne/France (1 aut., 3 aut.); Université Jean Monnet, 18 rue du Pr. Benoît Lauras/42000 Saint-Etienne/France (1 aut., 3 aut.); Dipartimento di Scienze Fisiche ed Astronomiche, Università degli Studi di Palermo, Via Archirafi 36/90123 Palermo/Italie (2 aut.)</AF>
<DT>Publication en série; Congrès; Niveau analytique</DT>
<SO>Journal of non-crystalline solids; ISSN 0022-3093; Coden JNCSBJ; Pays-Bas; Da. 2009; Vol. 355; No. 18-21; Pp. 1057-1061; Bibl. 24 ref.</SO>
<LA>Anglais</LA>
<EA>The infrared femtosecond laser damage threshold is found to be independent of OH content in pure silica glass. Additionally, the density and the mean trapping time of electrons excited in the conduction band are also found to be independent on OH concentration.</EA>
<CC>001B70H47; 001B70H45</CC>
<FD>Traitement par laser; Endommagement; Piégeage porteur charge; Interaction rayonnement matière; Rayonnement laser; Optique ultrarapide; Plasma électronique; Silice; Verre; Gel silice</FD>
<ED>Laser assisted processing; Damage; Charge carrier trapping; Radiation matter interactions; Laser radiation; Ultrafast optics; Electron plasma; Silica; Glass; Silica gel</ED>
<SD>Captura portador carga; Plasma electrónico</SD>
<LO>INIST-14572.354000187250520110</LO>
<ID>09-0398614</ID>
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Femtosecond laser direct processing in wet and dry silica glass

Femtosecond laser direct processing in wet and dry silica glass

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