AustralieFrV1, PascalFrancis, Corpus, bibRecord, 002574

On the effect of pre-recovery on subsequent recrystallization

Identifieur interne : 002574 ( PascalFrancis/Corpus ); précédent : 002573; suivant : 002575

On the effect of pre-recovery on subsequent recrystallization

Auteurs : Yves J. M. Brechet ; Hatem S. Zurob ; Christopher R. Hutchinson

Source :

International journal of materials research [ 1862-5282 ] ; 2009.

RBID : Pascal:10-0320244

Descripteurs français

Pascal (Inist)
- Récupération, Microstructure, Recristallisation, Germination, Modélisation.

English descriptors

KwdEn :
- Germination, Microstructure, Modeling, Recovery, Recrystallization.

Abstract

The effect of low temperature recovery treatments on recrystallization kinetics during subsequent annealing was examined using a simple physically-based model. The results suggest that recovery may accelerate recrystallization in high stacking fault energy materials. Otherwise, recovery is expected to retard recrystallization by reducing the driving force for the nucleation and growth of recrystallized grains. These calculations help reconcile a number of apparently conflicting reports on the effect of recovery on recrystallization.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

A01	`01`	`1`		`@0 1862-5282`
A03		`1`		`@0 Int. j. mater. res.`
A05				`@2 100`
A06				`@2 10`
A08	`01`	`1`	`ENG`	`@1 On the effect of pre-recovery on subsequent recrystallization`
A11	`01`	`1`		`@1 BRECHET (Yves J. M.)`
A11	`02`	`1`		`@1 ZUROB (Hatem S.)`
A11	`03`	`1`		`@1 HUTCHINSON (Christopher R.)`
A14	`01`			`@1 SIMAP, Institut National Polytechnique de Grenoble @2 St. Martin D'Heres @3 FRA @Z 1 aut.`
A14	`02`			`@1 Department of Materials Engineering, McMaster University @2 Hamilton @3 CAN @Z 2 aut.`
A14	`03`			`@1 Department of Materials Engineering, Monash University @2 Clayton, Victoria @3 AUS @Z 3 aut.`
A20				`@1 1446-1448`
A21				`@1 2009`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 271 @5 354000170158770150`
A44				`@0 0000 @1 © 2010 INIST-CNRS. All rights reserved.`
A45				`@0 16 ref.`
A47	`01`	`1`		`@0 10-0320244`
A60				`@1 P`
A61				`@0 A`
A64	`01`	`1`		`@0 International journal of materials research`
A66	`01`			`@0 DEU`
C01	`01`		`ENG`	@0 The effect of low temperature recovery treatments on recrystallization kinetics during subsequent annealing was examined using a simple physically-based model. The results suggest that recovery may accelerate recrystallization in high stacking fault energy materials. Otherwise, recovery is expected to retard recrystallization by reducing the driving force for the nucleation and growth of recrystallized grains. These calculations help reconcile a number of apparently conflicting reports on the effect of recovery on recrystallization.
C02	`01`	`X`		`@0 001D11A`
C02	`02`	`X`		`@0 240`
C03	`01`	`X`	`FRE`	`@0 Récupération @5 55`
C03	`01`	`X`	`ENG`	`@0 Recovery @5 55`
C03	`01`	`X`	`SPA`	`@0 Recuperación @5 55`
C03	`02`	`X`	`FRE`	`@0 Microstructure @5 56`
C03	`02`	`X`	`ENG`	`@0 Microstructure @5 56`
C03	`02`	`X`	`GER`	`@0 Mikrogefuege @5 56`
C03	`02`	`X`	`SPA`	`@0 Microestructura @5 56`
C03	`03`	`X`	`FRE`	`@0 Recristallisation @5 57`
C03	`03`	`X`	`ENG`	`@0 Recrystallization @5 57`
C03	`03`	`X`	`GER`	`@0 Rekristallisation @5 57`
C03	`03`	`X`	`SPA`	`@0 Recristalización @5 57`
C03	`04`	`X`	`FRE`	`@0 Germination @5 58`
C03	`04`	`X`	`ENG`	`@0 Germination @5 58`
C03	`04`	`X`	`GER`	`@0 Keimbildung @5 58`
C03	`04`	`X`	`SPA`	`@0 Germinación @5 58`
C03	`05`	`X`	`FRE`	`@0 Modélisation @5 59`
C03	`05`	`X`	`ENG`	`@0 Modeling @5 59`
C03	`05`	`X`	`SPA`	`@0 Modelización @5 59`
N21				`@1 200`
N44	`01`			`@1 OTO`
N82				`@1 OTO`

Format Inist (serveur)

NO :	PASCAL 10-0320244 INIST
ET :	On the effect of pre-recovery on subsequent recrystallization
AU :	BRECHET (Yves J. M.); ZUROB (Hatem S.); HUTCHINSON (Christopher R.)
AF :	SIMAP, Institut National Polytechnique de Grenoble/St. Martin D'Heres/France (1 aut.); Department of Materials Engineering, McMaster University/Hamilton/Canada (2 aut.); Department of Materials Engineering, Monash University/Clayton, Victoria/Australie (3 aut.)
DT :	Publication en série; Niveau analytique
SO :	International journal of materials research ; ISSN 1862-5282; Allemagne; Da. 2009; Vol. 100; No. 10; Pp. 1446-1448; Bibl. 16 ref.
LA :	Anglais
EA :	The effect of low temperature recovery treatments on recrystallization kinetics during subsequent annealing was examined using a simple physically-based model. The results suggest that recovery may accelerate recrystallization in high stacking fault energy materials. Otherwise, recovery is expected to retard recrystallization by reducing the driving force for the nucleation and growth of recrystallized grains. These calculations help reconcile a number of apparently conflicting reports on the effect of recovery on recrystallization.
CC :	001D11A; 240
FD :	Récupération; Microstructure; Recristallisation; Germination; Modélisation
ED :	Recovery; Microstructure; Recrystallization; Germination; Modeling
GD :	Mikrogefuege; Rekristallisation; Keimbildung
SD :	Recuperación; Microestructura; Recristalización; Germinación; Modelización
LO :	INIST-271.354000170158770150
ID :	10-0320244

Links to Exploration step

Pascal:10-0320244

Le document en format XML

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<ET>On the effect of pre-recovery on subsequent recrystallization</ET>
<AU>BRECHET (Yves J. M.); ZUROB (Hatem S.); HUTCHINSON (Christopher R.)</AU>
<AF>SIMAP, Institut National Polytechnique de Grenoble/St. Martin D'Heres/France (1 aut.); Department of Materials Engineering, McMaster University/Hamilton/Canada (2 aut.); Department of Materials Engineering, Monash University/Clayton, Victoria/Australie (3 aut.)</AF>
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On the effect of pre-recovery on subsequent recrystallization

On the effect of pre-recovery on subsequent recrystallization

Source :

Descripteurs français

English descriptors

Abstract

Notice en format standard (ISO 2709)

Format Inist (serveur)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri