Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials
Identifieur interne : 002251 ( PascalFrancis/Corpus ); précédent : 002250; suivant : 002252Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials
Auteurs : D. Fuertes Marron ; E. Canovas ; M. Y. Levy ; A. Marti ; A. Luque ; M. Afshar ; J. Albert ; S. Lehmann ; D. Abou-Ras ; S. Sadewasser ; N. BarreauSource :
- Solar energy materials and solar cells [ 0927-0248 ] ; 2010.
Descripteurs français
- Pascal (Inist)
- Propriété optoélectronique, Nanostructure, Dispositif photovoltaïque, Photoréflectance, Diffusion mutuelle, Défaut, Structure électronique, Confinement, Bande valence, Structure bande, Etat natif, Structure défaut, Cellule solaire, Chalcopyrite, Nanomatériau, Couche mince, Composé ternaire, Séléniure de cuivre, Séléniure d'indium, Semiconducteur bande interdite large, Nanoamas, Matériau absorbant, CuInSe2, CuGaSe2, Semiconducteur à bande intermédiaire.
English descriptors
- KwdEn :
- Absorbent material, Band structure, Chalcopyrite, Confinement, Copper selenides, Defect, Defect structure, Electronic structure, Indium selenides, Interdiffusion, Intermediate band semiconductor, Nanocluster, Nanostructure, Nanostructured materials, Native state, Optoelectronic properties, Photoreflectance, Photovoltaic cell, Solar cell, Ternary compound, Thin film, Valence band, Wide band gap semiconductors.
Abstract
Nanostructured chalcopyrite compounds have recently been proposed as absorber materials for advanced photovoltaic devices. We have used photoreflectance (PR) to evaluate the impact of interdiffusion phenomena and the presence of native defects on the optoelectronic properties of such materials. Two model material systems have been analyzed: (i) thin layers of CuGaSe2 (Eg= 1.7 eV) and CuInSe2 (1.0 eV) in a wide/low/wide bandgap stack that have been grown onto GaAs(0 0 1) substrates by metalorganic chemical vapor deposition (MOCVD); and (ii) thin In2S3 samples (Eg=2.0 eV) containing small amounts of Cu that have been grown by co-evaporation (PVD) intending to form CuxInySz (Eg∼1.5 eV) nanoclusters into the In2S3 matrix. The results have been analyzed according to the third-derivative functional form (TDFF). The valence band structure of selenide reference samples could be resolved and uneven interdiffusion of Ga and In in the layer stack could be inferred from the shift of PR-signatures. Hints of electronic confinement associated to the transitions at the low-gap region have been found in the selenide layer stack. Regarding the sulphide system, In2S3 is characterized by the presence of native deep states, as revealed by PR. The defect structure of the compound undergoes changes when incorporating Cu and no conclusive result about the presence of ternary clusters of a distinct phase could be drawn. Interdiffusion phenomena and the presence of native defects in chalcopyrites and related compounds will determine their potential use in advanced photovoltaic devices based on nanostructures.
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Format Inist (serveur)
| NO : | PASCAL 10-0514933 INIST |
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| ET : | Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials |
| AU : | FUERTES MARRON (D.); CANOVAS (E.); LEVY (M. Y.); MARTI (A.); LUQUE (A.); AFSHAR (M.); ALBERT (J.); LEHMANN (S.); ABOU-RAS (D.); SADEWASSER (S.); BARREAU (N.); CONIBEER (Gavin); SCHROPP (Ruud E. I.); MELLIKOV (Enn); TOPIC (Marko); BEAUCARNE (Guy) |
| AF : | Instituto de Energía Solar-ETSIT, UPM, Ciudad Universitaria s.n/28040 Madrid/Espagne (1 aut., 2 aut., 3 aut., 4 aut., 5 aut.); Helmholtz-Zentrum Berlin für Materialen und Energie, Glienicker Str. 100/14109 Berlin/Allemagne (6 aut., 7 aut., 8 aut., 9 aut., 10 aut.); Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229/44322 Nantes/France (11 aut.); ARC Photovoltaics Centre of Excellence, University of New South Wales/Sydney 2052/Australie (1 aut.); Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics, P.O. Box 80000/3508 TA Utrecht/Pays-Bas (2 aut.); Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5/Tallinn 19086/Estonie (3 aut.); IMEC, Kapeldreef 75/3001 Leuven/Belgique (5 aut.) |
| DT : | Publication en série; Niveau analytique |
| SO : | Solar energy materials and solar cells; ISSN 0927-0248; Pays-Bas; Da. 2010; Vol. 94; No. 11; Pp. 1912-1918; Bibl. 20 ref. |
| LA : | Anglais |
| EA : | Nanostructured chalcopyrite compounds have recently been proposed as absorber materials for advanced photovoltaic devices. We have used photoreflectance (PR) to evaluate the impact of interdiffusion phenomena and the presence of native defects on the optoelectronic properties of such materials. Two model material systems have been analyzed: (i) thin layers of CuGaSe2 (Eg= 1.7 eV) and CuInSe2 (1.0 eV) in a wide/low/wide bandgap stack that have been grown onto GaAs(0 0 1) substrates by metalorganic chemical vapor deposition (MOCVD); and (ii) thin In2S3 samples (Eg=2.0 eV) containing small amounts of Cu that have been grown by co-evaporation (PVD) intending to form CuxInySz (Eg∼1.5 eV) nanoclusters into the In2S3 matrix. The results have been analyzed according to the third-derivative functional form (TDFF). The valence band structure of selenide reference samples could be resolved and uneven interdiffusion of Ga and In in the layer stack could be inferred from the shift of PR-signatures. Hints of electronic confinement associated to the transitions at the low-gap region have been found in the selenide layer stack. Regarding the sulphide system, In2S3 is characterized by the presence of native deep states, as revealed by PR. The defect structure of the compound undergoes changes when incorporating Cu and no conclusive result about the presence of ternary clusters of a distinct phase could be drawn. Interdiffusion phenomena and the presence of native defects in chalcopyrites and related compounds will determine their potential use in advanced photovoltaic devices based on nanostructures. |
| CC : | 001D06C02D1; 001D03C; 230 |
| FD : | Propriété optoélectronique; Nanostructure; Dispositif photovoltaïque; Photoréflectance; Diffusion mutuelle; Défaut; Structure électronique; Confinement; Bande valence; Structure bande; Etat natif; Structure défaut; Cellule solaire; Chalcopyrite; Nanomatériau; Couche mince; Composé ternaire; Séléniure de cuivre; Séléniure d'indium; Semiconducteur bande interdite large; Nanoamas; Matériau absorbant; CuInSe2; CuGaSe2; Semiconducteur à bande intermédiaire |
| ED : | Optoelectronic properties; Nanostructure; Photovoltaic cell; Photoreflectance; Interdiffusion; Defect; Electronic structure; Confinement; Valence band; Band structure; Native state; Defect structure; Solar cell; Chalcopyrite; Nanostructured materials; Thin film; Ternary compound; Copper selenides; Indium selenides; Wide band gap semiconductors; Nanocluster; Absorbent material; Intermediate band semiconductor |
| SD : | Propiedad optoelectrónica; Nanoestructura; Dispositivo fotovoltaico; Difusión mútua; Defecto; Estructura electrónica; Confinamiento; Banda valencia; Estructura banda; Estado nativo; Célula solar; Calcopirita; Capa fina; Compuesto ternario; Nanomontón; Material absorbente |
| LO : | INIST-18016.354000191328110140 |
| ID : | 10-0514933 |
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Pascal:10-0514933Le document en format XML
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Lehmann</name><affiliation><inist:fA14 i1="02"><s1>Helmholtz-Zentrum Berlin für Materialen und Energie, Glienicker Str. 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Abou Ras, D" sort="Abou Ras, D" uniqKey="Abou Ras D" first="D." last="Abou-Ras">D. Abou-Ras</name><affiliation><inist:fA14 i1="02"><s1>Helmholtz-Zentrum Berlin für Materialen und Energie, Glienicker Str. 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Sadewasser, S" sort="Sadewasser, S" uniqKey="Sadewasser S" first="S." last="Sadewasser">S. Sadewasser</name><affiliation><inist:fA14 i1="02"><s1>Helmholtz-Zentrum Berlin für Materialen und Energie, Glienicker Str. 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Barreau, N" sort="Barreau, N" uniqKey="Barreau N" first="N." last="Barreau">N. Barreau</name><affiliation><inist:fA14 i1="03"><s1>Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>11 aut.</sZ></inist:fA14></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">INIST</idno><idno type="inist">10-0514933</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0514933 INIST</idno><idno type="RBID">Pascal:10-0514933</idno><idno type="wicri:Area/PascalFrancis/Corpus">002251</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials</title><author><name sortKey="Fuertes Marron, D" sort="Fuertes Marron, D" uniqKey="Fuertes Marron D" first="D." last="Fuertes Marron">D. Fuertes Marron</name><affiliation><inist:fA14 i1="01"><s1>Instituto de Energía Solar-ETSIT, UPM, Ciudad Universitaria s.n</s1><s2>28040 Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Canovas, E" sort="Canovas, E" uniqKey="Canovas E" first="E." last="Canovas">E. Canovas</name><affiliation><inist:fA14 i1="01"><s1>Instituto de Energía Solar-ETSIT, UPM, Ciudad Universitaria s.n</s1><s2>28040 Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Levy, M Y" sort="Levy, M Y" uniqKey="Levy M" first="M. Y." last="Levy">M. Y. Levy</name><affiliation><inist:fA14 i1="01"><s1>Instituto de Energía Solar-ETSIT, UPM, Ciudad Universitaria s.n</s1><s2>28040 Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Marti, A" sort="Marti, A" uniqKey="Marti A" first="A." last="Marti">A. Marti</name><affiliation><inist:fA14 i1="01"><s1>Instituto de Energía Solar-ETSIT, UPM, Ciudad Universitaria s.n</s1><s2>28040 Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Luque, A" sort="Luque, A" uniqKey="Luque A" first="A." last="Luque">A. Luque</name><affiliation><inist:fA14 i1="01"><s1>Instituto de Energía Solar-ETSIT, UPM, Ciudad Universitaria s.n</s1><s2>28040 Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Afshar, M" sort="Afshar, M" uniqKey="Afshar M" first="M." last="Afshar">M. Afshar</name><affiliation><inist:fA14 i1="02"><s1>Helmholtz-Zentrum Berlin für Materialen und Energie, Glienicker Str. 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Albert, J" sort="Albert, J" uniqKey="Albert J" first="J." last="Albert">J. Albert</name><affiliation><inist:fA14 i1="02"><s1>Helmholtz-Zentrum Berlin für Materialen und Energie, Glienicker Str. 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Lehmann, S" sort="Lehmann, S" uniqKey="Lehmann S" first="S." last="Lehmann">S. Lehmann</name><affiliation><inist:fA14 i1="02"><s1>Helmholtz-Zentrum Berlin für Materialen und Energie, Glienicker Str. 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Abou Ras, D" sort="Abou Ras, D" uniqKey="Abou Ras D" first="D." last="Abou-Ras">D. Abou-Ras</name><affiliation><inist:fA14 i1="02"><s1>Helmholtz-Zentrum Berlin für Materialen und Energie, Glienicker Str. 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Sadewasser, S" sort="Sadewasser, S" uniqKey="Sadewasser S" first="S." last="Sadewasser">S. Sadewasser</name><affiliation><inist:fA14 i1="02"><s1>Helmholtz-Zentrum Berlin für Materialen und Energie, Glienicker Str. 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Barreau, N" sort="Barreau, N" uniqKey="Barreau N" first="N." last="Barreau">N. Barreau</name><affiliation><inist:fA14 i1="03"><s1>Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>11 aut.</sZ></inist:fA14></affiliation></author></analytic><series><title level="j" type="main">Solar energy materials and solar cells</title><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><idno type="ISSN">0927-0248</idno><imprint><date when="2010">2010</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Solar energy materials and solar cells</title><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><idno type="ISSN">0927-0248</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorbent material</term><term>Band structure</term><term>Chalcopyrite</term><term>Confinement</term><term>Copper selenides</term><term>Defect</term><term>Defect structure</term><term>Electronic structure</term><term>Indium selenides</term><term>Interdiffusion</term><term>Intermediate band semiconductor</term><term>Nanocluster</term><term>Nanostructure</term><term>Nanostructured materials</term><term>Native state</term><term>Optoelectronic properties</term><term>Photoreflectance</term><term>Photovoltaic cell</term><term>Solar cell</term><term>Ternary compound</term><term>Thin film</term><term>Valence band</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété optoélectronique</term><term>Nanostructure</term><term>Dispositif photovoltaïque</term><term>Photoréflectance</term><term>Diffusion mutuelle</term><term>Défaut</term><term>Structure électronique</term><term>Confinement</term><term>Bande valence</term><term>Structure bande</term><term>Etat natif</term><term>Structure défaut</term><term>Cellule solaire</term><term>Chalcopyrite</term><term>Nanomatériau</term><term>Couche mince</term><term>Composé ternaire</term><term>Séléniure de cuivre</term><term>Séléniure d'indium</term><term>Semiconducteur bande interdite large</term><term>Nanoamas</term><term>Matériau absorbant</term><term>CuInSe2</term><term>CuGaSe2</term><term>Semiconducteur à bande intermédiaire</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Nanostructured chalcopyrite compounds have recently been proposed as absorber materials for advanced photovoltaic devices. We have used photoreflectance (PR) to evaluate the impact of interdiffusion phenomena and the presence of native defects on the optoelectronic properties of such materials. Two model material systems have been analyzed: (i) thin layers of CuGaSe<sub>2</sub> (Eg= 1.7 eV) and CuInSe<sub>2</sub> (1.0 eV) in a wide/low/wide bandgap stack that have been grown onto GaAs(0 0 1) substrates by metalorganic chemical vapor deposition (MOCVD); and (ii) thin In<sub>2</sub>S<sub>3</sub> samples (E<sub>g</sub>=2.0 eV) containing small amounts of Cu that have been grown by co-evaporation (PVD) intending to form Cu<sub>x</sub>In<sub>y</sub>S<sub>z</sub> (E<sub>g</sub>∼1.5 eV) nanoclusters into the In<sub>2</sub>S<sub>3</sub> matrix. The results have been analyzed according to the third-derivative functional form (TDFF). The valence band structure of selenide reference samples could be resolved and uneven interdiffusion of Ga and In in the layer stack could be inferred from the shift of PR-signatures. Hints of electronic confinement associated to the transitions at the low-gap region have been found in the selenide layer stack. Regarding the sulphide system, In<sub>2</sub>S<sub>3</sub> is characterized by the presence of native deep states, as revealed by PR. The defect structure of the compound undergoes changes when incorporating Cu and no conclusive result about the presence of ternary clusters of a distinct phase could be drawn. Interdiffusion phenomena and the presence of native defects in chalcopyrites and related compounds will determine their potential use in advanced photovoltaic devices based on nanostructures.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>94</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Inorganic and Nanostructured Photovoltaics (EMRS B)</s1></fA09><fA11 i1="01" i2="1"><s1>FUERTES MARRON (D.)</s1></fA11><fA11 i1="02" i2="1"><s1>CANOVAS (E.)</s1></fA11><fA11 i1="03" i2="1"><s1>LEVY (M. Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>MARTI (A.)</s1></fA11><fA11 i1="05" i2="1"><s1>LUQUE (A.)</s1></fA11><fA11 i1="06" i2="1"><s1>AFSHAR (M.)</s1></fA11><fA11 i1="07" i2="1"><s1>ALBERT (J.)</s1></fA11><fA11 i1="08" i2="1"><s1>LEHMANN (S.)</s1></fA11><fA11 i1="09" i2="1"><s1>ABOU-RAS (D.)</s1></fA11><fA11 i1="10" i2="1"><s1>SADEWASSER (S.)</s1></fA11><fA11 i1="11" i2="1"><s1>BARREAU (N.)</s1></fA11><fA12 i1="01" i2="1"><s1>CONIBEER (Gavin)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SCHROPP (Ruud E. I.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>MELLIKOV (Enn)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>TOPIC (Marko)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>BEAUCARNE (Guy)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Instituto de Energía Solar-ETSIT, UPM, Ciudad Universitaria s.n</s1><s2>28040 Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Helmholtz-Zentrum Berlin für Materialen und Energie, Glienicker Str. 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="03"><s1>Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>11 aut.</sZ></fA14><fA15 i1="01"><s1>ARC Photovoltaics Centre of Excellence, University of New South Wales</s1><s2>Sydney 2052</s2><s3>AUS</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics, P.O. Box 80000</s1><s2>3508 TA Utrecht</s2><s3>NLD</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1><s2>Tallinn 19086</s2><s3>EST</s3><sZ>3 aut.</sZ></fA15><fA15 i1="04"><s1>IMEC, Kapeldreef 75</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>5 aut.</sZ></fA15><fA20><s1>1912-1918</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000191328110140</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0514933</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Nanostructured chalcopyrite compounds have recently been proposed as absorber materials for advanced photovoltaic devices. We have used photoreflectance (PR) to evaluate the impact of interdiffusion phenomena and the presence of native defects on the optoelectronic properties of such materials. Two model material systems have been analyzed: (i) thin layers of CuGaSe<sub>2</sub> (Eg= 1.7 eV) and CuInSe<sub>2</sub> (1.0 eV) in a wide/low/wide bandgap stack that have been grown onto GaAs(0 0 1) substrates by metalorganic chemical vapor deposition (MOCVD); and (ii) thin In<sub>2</sub>S<sub>3</sub> samples (E<sub>g</sub>=2.0 eV) containing small amounts of Cu that have been grown by co-evaporation (PVD) intending to form Cu<sub>x</sub>In<sub>y</sub>S<sub>z</sub> (E<sub>g</sub>∼1.5 eV) nanoclusters into the In<sub>2</sub>S<sub>3</sub> matrix. The results have been analyzed according to the third-derivative functional form (TDFF). The valence band structure of selenide reference samples could be resolved and uneven interdiffusion of Ga and In in the layer stack could be inferred from the shift of PR-signatures. Hints of electronic confinement associated to the transitions at the low-gap region have been found in the selenide layer stack. Regarding the sulphide system, In<sub>2</sub>S<sub>3</sub> is characterized by the presence of native deep states, as revealed by PR. The defect structure of the compound undergoes changes when incorporating Cu and no conclusive result about the presence of ternary clusters of a distinct phase could be drawn. Interdiffusion phenomena and the presence of native defects in chalcopyrites and related compounds will determine their potential use in advanced photovoltaic devices based on nanostructures.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D03C</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Propriété optoélectronique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Optoelectronic properties</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Propiedad optoelectrónica</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Nanostructure</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Nanostructure</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Nanoestructura</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Dispositif photovoltaïque</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Photovoltaic cell</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Dispositivo fotovoltaico</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Photoréflectance</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Photoreflectance</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Diffusion mutuelle</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Interdiffusion</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Difusión mútua</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Défaut</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Defect</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Defecto</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Structure électronique</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Electronic structure</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Estructura electrónica</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Confinement</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Confinement</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Confinamiento</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Bande valence</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Valence band</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Banda valencia</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Structure bande</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Band structure</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Estructura banda</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Etat natif</s0><s5>13</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Native state</s0><s5>13</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Estado nativo</s0><s5>13</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Structure défaut</s0><s5>14</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Defect structure</s0><s5>14</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Solar cell</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Célula solar</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Chalcopyrite</s0><s5>22</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Chalcopyrite</s0><s5>22</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Calcopirita</s0><s5>22</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>23</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>23</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Couche mince</s0><s5>24</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Thin film</s0><s5>24</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Capa fina</s0><s5>24</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>25</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Ternary compound</s0><s5>25</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>25</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>26</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>26</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>27</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>27</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0><s5>28</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0><s5>28</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Nanoamas</s0><s5>31</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Nanocluster</s0><s5>31</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Nanomontón</s0><s5>31</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Matériau absorbant</s0><s5>32</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Absorbent material</s0><s5>32</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Material absorbente</s0><s5>32</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>CuGaSe2</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Semiconducteur à bande intermédiaire</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Intermediate band semiconductor</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>347</s1></fN21></pA></standard><server><NO>PASCAL 10-0514933 INIST</NO><ET>Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials</ET><AU>FUERTES MARRON (D.); CANOVAS (E.); LEVY (M. Y.); MARTI (A.); LUQUE (A.); AFSHAR (M.); ALBERT (J.); LEHMANN (S.); ABOU-RAS (D.); SADEWASSER (S.); BARREAU (N.); CONIBEER (Gavin); SCHROPP (Ruud E. I.); MELLIKOV (Enn); TOPIC (Marko); BEAUCARNE (Guy)</AU><AF>Instituto de Energía Solar-ETSIT, UPM, Ciudad Universitaria s.n/28040 Madrid/Espagne (1 aut., 2 aut., 3 aut., 4 aut., 5 aut.); Helmholtz-Zentrum Berlin für Materialen und Energie, Glienicker Str. 100/14109 Berlin/Allemagne (6 aut., 7 aut., 8 aut., 9 aut., 10 aut.); Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229/44322 Nantes/France (11 aut.); ARC Photovoltaics Centre of Excellence, University of New South Wales/Sydney 2052/Australie (1 aut.); Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics, P.O. Box 80000/3508 TA Utrecht/Pays-Bas (2 aut.); Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5/Tallinn 19086/Estonie (3 aut.); IMEC, Kapeldreef 75/3001 Leuven/Belgique (5 aut.)</AF><DT>Publication en série; Niveau analytique</DT><SO>Solar energy materials and solar cells; ISSN 0927-0248; Pays-Bas; Da. 2010; Vol. 94; No. 11; Pp. 1912-1918; Bibl. 20 ref.</SO><LA>Anglais</LA><EA>Nanostructured chalcopyrite compounds have recently been proposed as absorber materials for advanced photovoltaic devices. We have used photoreflectance (PR) to evaluate the impact of interdiffusion phenomena and the presence of native defects on the optoelectronic properties of such materials. Two model material systems have been analyzed: (i) thin layers of CuGaSe<sub>2</sub> (Eg= 1.7 eV) and CuInSe<sub>2</sub> (1.0 eV) in a wide/low/wide bandgap stack that have been grown onto GaAs(0 0 1) substrates by metalorganic chemical vapor deposition (MOCVD); and (ii) thin In<sub>2</sub>S<sub>3</sub> samples (E<sub>g</sub>=2.0 eV) containing small amounts of Cu that have been grown by co-evaporation (PVD) intending to form Cu<sub>x</sub>In<sub>y</sub>S<sub>z</sub> (E<sub>g</sub>∼1.5 eV) nanoclusters into the In<sub>2</sub>S<sub>3</sub> matrix. The results have been analyzed according to the third-derivative functional form (TDFF). The valence band structure of selenide reference samples could be resolved and uneven interdiffusion of Ga and In in the layer stack could be inferred from the shift of PR-signatures. Hints of electronic confinement associated to the transitions at the low-gap region have been found in the selenide layer stack. Regarding the sulphide system, In<sub>2</sub>S<sub>3</sub> is characterized by the presence of native deep states, as revealed by PR. The defect structure of the compound undergoes changes when incorporating Cu and no conclusive result about the presence of ternary clusters of a distinct phase could be drawn. Interdiffusion phenomena and the presence of native defects in chalcopyrites and related compounds will determine their potential use in advanced photovoltaic devices based on nanostructures.</EA><CC>001D06C02D1; 001D03C; 230</CC><FD>Propriété optoélectronique; Nanostructure; Dispositif photovoltaïque; Photoréflectance; Diffusion mutuelle; Défaut; Structure électronique; Confinement; Bande valence; Structure bande; Etat natif; Structure défaut; Cellule solaire; Chalcopyrite; Nanomatériau; Couche mince; Composé ternaire; Séléniure de cuivre; Séléniure d'indium; Semiconducteur bande interdite large; Nanoamas; Matériau absorbant; CuInSe2; CuGaSe2; Semiconducteur à bande intermédiaire</FD><ED>Optoelectronic properties; Nanostructure; Photovoltaic cell; Photoreflectance; Interdiffusion; Defect; Electronic structure; Confinement; Valence band; Band structure; Native state; Defect structure; Solar cell; Chalcopyrite; Nanostructured materials; Thin film; Ternary compound; Copper selenides; Indium selenides; Wide band gap semiconductors; Nanocluster; Absorbent material; Intermediate band semiconductor</ED><SD>Propiedad optoelectrónica; Nanoestructura; Dispositivo fotovoltaico; Difusión mútua; Defecto; Estructura electrónica; Confinamiento; Banda valencia; Estructura banda; Estado nativo; Célula solar; Calcopirita; Capa fina; Compuesto ternario; Nanomontón; Material absorbente</SD><LO>INIST-18016.354000191328110140</LO><ID>10-0514933</ID></server></inist></record>Pour manipuler ce document sous Unix (Dilib)
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