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Serveur d'exploration sur les relations entre la France et l'Australie - Checkpoint (PascalFrancis)

Index « Keywords » - entrée « Silicon oxides »
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Silicon on insulator technology < Silicon oxides < Silicon phosphides  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 33.
[0-20] [0 - 20][0 - 33][20-32][20-40]
Ident.Authors (with country if any)Title
000292 (2014) Dario Caldarola [Italie, Australie] ; Dimitar P. Mitev [Australie] ; Lucile Marlin [France, Irlande (pays)] ; Ekaterina P. Nesterenko [Irlande (pays)] ; Brett Paull [Australie] ; Barbara Onida [Italie] ; Maria Concetta Bruzzoniti [Italie] ; Rosa Maria De Carlo [Italie] ; Corrado Sarzanini [Italie] ; Pavel N. Nesterenko [Australie]Functionalisation of mesoporous silica gel with 2-[(phosphonomethyl)-amino]acetic acid functional groups. Characterisation and application
000654 (2013) B. Afra [Australie] ; M. D. Rodriguez [Australie] ; C. Trautmann [Allemagne] ; O. H. Pakarinen [Finlande] ; F. Djurabekova [Finlande] ; K. Nordlund [Finlande] ; T. Bierschenk [Australie] ; R. Giulian [Australie] ; M. C. Ridgway [Australie] ; G. Rizza [France] ; N. Kirby [Australie] ; M. Toulemonde [France] ; P. Kluth [Australie]SAXS investigations of the morphology of swift heavy ion tracks in α-quartz
000977 (2013) Noel W. Cant [Australie] ; Irene O. Y. Liu [Australie] ; Jason A. Scott [Australie]Ethylene oligomerisation over Co/SiO2 in the presence of trace carbon monoxide: The Eidus reaction revisited
000D37 (2012) Doris Litzkendorf [Allemagne] ; Stephan Grimm [Allemagne] ; Kay Schuster [Allemagne] ; Jens Kobelke [Allemagne] ; Anka Schwuchow [Allemagne] ; Anne Ludwig [Allemagne] ; Johannes Kirchhof [Allemagne] ; Martin Leich [Allemagne] ; Sylvia Jetschke [Allemagne] ; Jan Dellith [Allemagne] ; Jean-Louis Auguste [France] ; Georges Humbert [France]Study of Lanthanum Aluminum Silicate Glasses for Passive and Active Optical Fibers
000F97 (2012) B. A. Latella [Australie] ; M. Ignat [France, Chili]Interface fracture surface energy of sol-gel bonded silicon wafers by three-point bending : Lead-free solder and packaging
002A14 (2009) A. A. Stashkevich [France] ; Y. Roussigne [France] ; A. I. Stognij [Biélorussie] ; N. I. Novitskii [Biélorussie] ; G. Wurtz [Royaume-Uni] ; A. V. Zayats [Royaume-Uni] ; G. Viau [France] ; G. Chaboussant [France] ; F. Ott [France] ; L. V. Lutsev [Russie] ; P. Djemia [France] ; M. P. Kostylev [Australie] ; V. Belotelov [Russie]Magnetic excitations in (SiO2)Co nano-composite films : Brillouin light scattering study
002B66 (2009) X. J. Hao [Australie] ; E.-C. Cho [Australie] ; G. Scardera [Australie] ; E. Bellet-Amalric [France] ; D. Bellet [France] ; Y. S. Shen [Australie] ; S. Huang [Australie] ; Y. D. Huang [Australie] ; G. Conibeer [Australie] ; M. A. Green [Australie]Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix
002F29 (2008) G. J. Conibeer [Australie] ; C.-W. Jiang [Australie] ; D. König [Australie] ; S. Shrestha [Australie] ; T. Walsh [Australie] ; M. A. Green [Australie]Selective energy contacts for hot carrier solar cells
003753 (2007) Vincent Reillon [France] ; Serge Berthier [France] ; Stephane Chenot [France]Nanostructures produced by co-sputtering to study the optical properties of artistic middle-age nano-cermets: The lustres
003826 (2007) P. D. Szkutnik [France] ; A. Sgarlata [Italie] ; N. Motta [Australie] ; E. Placidi [Italie] ; I. Berbezier [France] ; A. Balzarotti [Italie]Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces
003B93 (2006) A. A. Prokofiev [Russie] ; A. S. Moskalenko [Russie, Allemagne] ; I. N. Yassievich [Russie]Theoretical modeling of excitation and de-excitation processes of Er in SiO2 with Si nanocrystals
003C58 (2006) Tadamasa Kimura [Japon] ; Katsuaki Masaki [Japon] ; Hideo Isshiki [Japon]Study on crystalline properties of Er-Si-O compounds in relation to Er-related 1.54 μm photoluminescence and electrical properties
003C93 (2006) J. Potfajova [Allemagne] ; J. M. Sun [Allemagne] ; B. Schmidt [Allemagne] ; T. Dekorsy [Allemagne] ; W. Skorupa [Allemagne] ; M. Helm [Allemagne]Silicon-on-insulator microcavity light emitting diodes with two Si/SiO2 Bragg reflectors
003C97 (2006) X. Li [France] ; P. Boucaud [France] ; X. Checoury [France] ; M. El Kurdi [France] ; S. David [France] ; S. Sauvage [France] ; N. Yam [France] ; F. Fossard [France] ; D. Bouchier [France] ; J. M. Fedeli [France] ; V. Calvo [France] ; E. Hadji [France] ; A. Salomon [France]Si-based two-dimensional photonic crystals coupled to one-dimensional Bragg mirrors
003C99 (2006) Maria Eloisa Castagna [Italie] ; Anna Muscara [Italie] ; Salvatore Leonardi [Italie] ; Salvatore Coffa [Italie] ; Liliana Caristia [Italie] ; Cristina Tringali [Italie] ; Simona Lorenti [Italie]Si-based erbium-doped light-emitting devices
003D75 (2006) B. Salem [France] ; P. Noe [France] ; F. Mazen [France] ; V. Calvo [France] ; E. Hadji [France]Photoluminescence from Er-doped silicon rich oxide thin films
003E03 (2006) A. Belarouci [France] ; F. Gourbilleau [France] ; R. Rizk [France]Optical properties from SRSO/SiO2 multilayers in planar microcavities
003E04 (2006) D. Navarro-Urrios [Italie] ; M. Melchiorri [Italie] ; N. Daldosso [Italie] ; L. Pavesi [Italie] ; C. Garcia [Espagne] ; P. Pellegrino [Espagne] ; B. Garrido [Espagne] ; G. Pucker [Italie] ; F. Gourbilleau [France] ; R. Rizk [France]Optical losses and gain in silicon-rich silica waveguides containing Er ions
003E05 (2006) N. Daldosso [Italie] ; M. Melchiorri [Italie] ; L. Pavesi [Italie] ; G. Pucker [Italie] ; F. Gourbilleau [France] ; S. Chausserie [France] ; Ali Belarouci [France] ; X. Portier [France] ; C. Dufour [France]Optical losses and absorption cross-section of silicon nanocrystals
003E37 (2006) D. Breard [France] ; F. Gourbilleau [France] ; A. Belarouci [France] ; C. Dufour [France] ; R. Rizk [France]Nd3+ photoluminescence study of Nd-doped Si-rich silica films obtained by reactive magnetron sputtering
003F48 (2006) G. Wora Adeola [France] ; H. Rinnert [France] ; P. Miska [France] ; M. Vergnat [France]Influence of the SiO thickness on the photoluminescence properties of Er-doped SiO/SiO2 multilayers

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