Ankyrin < Annealing < Annealing temperature

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List of bibliographic references

Number of relevant bibliographic references: 34.
[0-20] [0 - 20][0 - 34][20-33][20-40]

Ident.	Authors (with country if any)	Title
000432 (2014)	Dmitry Orlov [Japon] ; Rimma Lapovok [Australie] ; Laszlo S. Toth [France] ; Ilana B. Timokhina [Australie] ; Peter D. Hodgson [Australie] ; Arunansu Haldar [Royaume-Uni] ; Debashish Bhattacharjee [Royaume-Uni]	Asymmetric Rolling of Interstitial-Free Steel Using Differential Roll Diameters. Part II: Microstructure and Annealing Effects
000C53 (2012)	Bashir S. Shariat [Australie] ; YINONG LIU [Australie] ; Gerard Rio [France]	Thermomechanical modelling of microstructurally graded shape memory alloys
001616 (2011)	C. F. Gu [Australie] ; L. S. Toth [France] ; R. Lapovok [Australie] ; C. H. J. Davies [Australie]	Texture evolution and grain refinement of ultrafine-grained copper during micro-extrusion
001978 (2011)	Tsu-Tsung Andrew Li [Australie] ; Simon Ruffell [Australie] ; Mario Tucci [Italie] ; Yves Mansoulie [France] ; Christian Samundsett [Australie] ; Simona De Iullis [Italie] ; Luca Serenelli [Italie] ; Andres Cuevas [Australie]	Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon
002114 (2010)	Ö. Tüzün [France] ; Y. Qiu [Belgique] ; A. Slaoui [France] ; I. Gordon [Belgique] ; C. Maurice [France] ; S. Venkatachalam [Belgique] ; S. Chatterjee [France] ; G. Beaucarne [Belgique] ; J. Poortmans [Belgique]	Properties of n-type polycrystalline silicon solar cells formed by aluminium induced crystallization and CVD thickening
002453 (2010)	G. Dantelle [France] ; A. Slablab [France] ; L. Rondin [France] ; F. Laine [France] ; F. Carrel [France] ; Ph. Bergonzo [France] ; S. Perruchas [France] ; T. Gacoin [France] ; F. Treussart [France] ; J.-F. Roch [France]	Efficient production of NV colour centres in nanodiamonds using high-energy electron irradiation
002515 (2010)	B. C. Johnson [Australie] ; J. C. Mccallum [Australie] ; L. H. Willems Van Beveren [Australie] ; E. Gauja [Australie]	Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
002785 (2009)	Ali Youssef [Australie] ; Martial Pabon [Suisse] ; Romain Severac [France] ; Robert G. Gilbert [Australie]	The Effect of Copolymer Composition on the Surface Properties of Perfluoroalkylethyl Acrylates
003777 (2007)	Z. Wronski [Canada] ; R. A. Varin [Canada] ; C. Chiu [Canada] ; T. Czujko [Canada] ; A. Calka [Australie]	Mechanochemical synthesis of nanostructured chemical hydrides in hydrogen alloying mills
003C58 (2006)	Tadamasa Kimura [Japon] ; Katsuaki Masaki [Japon] ; Hideo Isshiki [Japon]	Study on crystalline properties of Er-Si-O compounds in relation to Er-related 1.54 μm photoluminescence and electrical properties
003C95 (2006)	P. Janda [République tchèque] ; J. Valenta [République tchèque] ; T. Ostatnicky [République tchèque] ; E. Skopalova [République tchèque] ; I. Pelant [République tchèque] ; R. G. Elliman [Australie] ; R. Tomasiunas [Lituanie]	Silicon nanocrystals in silica-Novel active waveguides for nanophotonics
003D73 (2006)	XIUYU SUN [République populaire de Chine] ; FAQIANG XU [République populaire de Chine] ; ZONGMU LI [République populaire de Chine] ; WENHUA ZHANG [République populaire de Chine]	Photoluminescence properties of anodic alumina membranes with ordered nanopore arrays
003D75 (2006)	B. Salem [France] ; P. Noe [France] ; F. Mazen [France] ; V. Calvo [France] ; E. Hadji [France]	Photoluminescence from Er-doped silicon rich oxide thin films
003D76 (2006)	A. Arbouet [France] ; M. Carrada [France] ; F. Demangeot [France] ; V. Paillard [France] ; G. Benassayag [France] ; C. Bonafos [France] ; A. Claverie [France] ; S. Schamm [France] ; C. Dumas [France] ; J. Grisolia [France] ; M. A. F. Van Den Boogaart [Suisse] ; J. Brugger [Suisse] ; L. Doeswijk [Suisse]	Photoluminescence characterization of few-nanocrystals electronic devices
003E05 (2006)	N. Daldosso [Italie] ; M. Melchiorri [Italie] ; L. Pavesi [Italie] ; G. Pucker [Italie] ; F. Gourbilleau [France] ; S. Chausserie [France] ; Ali Belarouci [France] ; X. Portier [France] ; C. Dufour [France]	Optical losses and absorption cross-section of silicon nanocrystals
003F33 (2006)	R. Singh [Allemagne] ; I. Radu [Allemagne] ; R. Scholz [Allemagne] ; C. Himcinschi [Allemagne] ; U. Gösele [Allemagne] ; S. H. Christiansen [Allemagne]	Investigation of helium implantation induced blistering in InP
003F41 (2006)	A. Meldrum [Canada] ; A. Hryciw [Canada] ; A. N. Macdonald [Canada] ; C. Blois [Canada] ; T. Clement [Canada] ; R. Decorby [Canada] ; J. Wang [Hong Kong] ; QUAN LI [Hong Kong]	Interaction between rare-earth ions and amorphous silicon nanoclusters produced at low processing temperatures
003F48 (2006)	G. Wora Adeola [France] ; H. Rinnert [France] ; P. Miska [France] ; M. Vergnat [France]	Influence of the SiO thickness on the photoluminescence properties of Er-doped SiO/SiO2 multilayers
004054 (2006)	S. Dabboussi [Tunisie] ; H. Elhouichet [Tunisie] ; H. Ajlani [Tunisie] ; A. Moadhen [Tunisie] ; M. Oueslati [Tunisie] ; J. A. Roger [France]	Excitation process and photoluminescence properties of Tb3+and Eu3+ ions in SnO2 and in SnO2 : Porous silicon hosts
004123 (2006)	Anna Muscara [Italie] ; Maria Eloisa Castagna [Italie] ; Salvatore Leonardi [Italie] ; Salvatore Coffa [Italie] ; Liliana Caristia [Italie] ; Simona Lorenti [Italie]	Design and electro-optical characterization of Si-based resonant cavity light emitting devices at 850nm
004166 (2006)	O. Jambois [Espagne] ; A. Vila [Espagne] ; P. Pellegrino [Espagne] ; J. Carreras [Espagne] ; A. Pbrez-Rodriguez [Espagne] ; B. Garrido [Espagne] ; C. Bonafos [France] ; G. Benassayag [France]	Charge transport along luminescent oxide layers containing Si and SiC nanoparticles

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