Semiconducteur III-V And NotAnna Fontcuberta I Morral

List of bibliographic references

Number of relevant bibliographic references: 10.

Ident.	Authors (with country if any)	Title
000431	Maria De La Mata [Espagne] ; César Magen [Espagne] ; Philippe Caroff [France, Australie] ; Jordi Arbiol [Espagne]	Atomic Scale Strain Relaxation in Axial Semiconductor III-V Nanowire Heterostructures
001854	L. Matekovits [Australie] ; M. Heimlich [Australie] ; K. P. Esselle [Australie]	Numerical analysis of 2D tunable HIS on GaAs support
002139	C. Kieleck [France] ; M. Eichhorn [France] ; D. Faye [France] ; E. Lallier [France] ; S. D. Jackson [Australie]	Polarization effects and fiber-laser-pumping of a 2-μ-pumped OP-GaAs OPO
002543	Kimberly A. Dick [Suède] ; Philippe Caroff [Suède, France] ; Jessica Bolinsson [Suède] ; Maria E. Messing [Suède] ; Jonas Johansson [Suède] ; Knut Deppert [Suède] ; L. Reine Wallenberg [Suède] ; Lars Samuelson [Suède]	Control of III-V nanowire crystal structure by growth parameter tuning
003C50	T. V. Shubina [Russie] ; D. S. Plotnikov [Russie] ; A. Vasson [France] ; J. Leymarie [France] ; M. Larsson [France] ; P. O. Holtz [Suède] ; B. Monemar [Suède] ; HAI LU [États-Unis] ; W. J. Schaff [États-Unis] ; P. S. Kop'Ev [Russie]	Surface-plasmon resonances in indium nitride with metal-enriched nano-particles
003F03	B. Kunert [Allemagne] ; K. Volz [Allemagne] ; I. Nemeth [Allemagne] ; W. Stolz [Allemagne]	Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system
003F33	R. Singh [Allemagne] ; I. Radu [Allemagne] ; R. Scholz [Allemagne] ; C. Himcinschi [Allemagne] ; U. Gösele [Allemagne] ; S. H. Christiansen [Allemagne]	Investigation of helium implantation induced blistering in InP
004A79	Bénédicte Maleyre [France] ; Olivier Briot [France] ; Sandra Ruffenach [France]	MOVPE growth of InN films and quantum dots
004C46	I. M. Tiginyanu [Moldavie] ; S. Langa [Moldavie, Allemagne] ; L. Sirbu [Moldavie] ; E. Monaico [Moldavie] ; M. A. Stevens-Kalceff [Australie] ; H. Föll [Allemagne]	Cathodoluminescence microanalysis of porous GaP and InP structures
004C89	O. Briot [France] ; B. Maleyre [France] ; S. Ruffenach [France] ; B. Gil [France] ; C. Pinquier [France] ; F. Demangeot [France] ; J. Frandon [France]	Absorption and Raman scattering processes in InN films and dots

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