Ident. | Authors (with country if any) | Title |
---|
000135 |
XIAO LI ZHANG [Australie] ; FUZHI HUANG [Australie] ; YANG CHEN [Australie] ; Yi-Bing Cheng [Australie] ; Rose Amal [Australie] | Prompting electron transport in mesoporous semiconductor electrode by simple film compression |
000276 |
S Nia Conesa-Boj [Suisse] ; Dominik Kriegner [Autriche] ; Xiang-Lei Han [France] ; Sébastien Plissard [Pays-Bas] ; Xavier Wallart [France] ; Julian Stangl [Autriche] ; Anna Fontcuberta I Morral [Suisse] ; Philippe Caroff [France, Australie] | Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer |
000878 |
A. C. Y. Liu [Australie, États-Unis] ; R. Arenal [États-Unis, Espagne, France] ; G. Montagnac [France] | In situ transmission electron microscopy observation of keV-ion irradiation of single-walled carbon and boron nitride nanotubes |
001D63 |
Pawel Gawrys [Pologne] ; Anna Zoltowska [Pologne] ; Malgorzata Zagorska [Pologne] ; Adam Pron [France] | Alternating copolymers of oligoarylenes and naphthalene bisimides as low band gap semiconductors: Synthesis, electrochemical and spectroelectrochemical behavior |
002515 |
B. C. Johnson [Australie] ; J. C. Mccallum [Australie] ; L. H. Willems Van Beveren [Australie] ; E. Gauja [Australie] | Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport |
002605 |
Wolfgang Erker [Allemagne] ; Stephanie Boggasch [Allemagne] ; RENGUO XIE [Allemagne] ; Götz Grundmann [Allemagne] ; Harald Paulsen [Allemagne] ; Thomas Basche [Allemagne] | Assemblies of semiconductor quantum dots and light-harvesting-complex II |
003B44 |
Susan Schorr [Allemagne] ; Michael Tovar [Allemagne] ; Norbert Stuesser [Allemagne] ; Denis Sheptyakov [Suisse] ; Guillaume Geandier [France] | Where the atoms are : Cation disorder and anion displacement in DIIXVI-AIBIIIXVI2 semiconductors |
003C05 |
I. Moreels [Belgique] ; P. Kockaert [Belgique] ; R. Van Deun [Belgique] ; K. Driesen [Belgique] ; J. Loicq [Belgique] ; D. Van Thourhout [Belgique] ; Z. Hens [Belgique] | The non-linear refractive index of colloidal PbSe nanocrystals : Spectroscopy and saturation behaviour |
003C58 |
Tadamasa Kimura [Japon] ; Katsuaki Masaki [Japon] ; Hideo Isshiki [Japon] | Study on crystalline properties of Er-Si-O compounds in relation to Er-related 1.54 μm photoluminescence and electrical properties |
003D22 |
Nunzio Motta [Australie] ; Pierre D. Szkutnik [France] ; Massimo Tomellini [Italie] ; Anna Sgarlata [Italie] ; Massimo Fanfoni [Italie] ; Fulvia Patella [Italie] ; Adalberto Balzarotti [Italie] | Role of patterning in islands nucleation on semiconductor surfaces |
003F24 |
J. P. Morniroli [France] ; R. K. W. Marceau [Australie] ; S. P. Ringer [Australie] ; L. Boulanger [France] | LACBED characterization of dislocation loops |
003F84 |
Axel Straub [Australie] ; Daniel Inns [Australie] ; Mason L. Terry [Australie] ; YIDAN HUANG [Australie] ; Per I. Widenborg [Australie] ; Armin G. Aberle [Australie] | Homoepitaxial silicon growth in a non-ultra-high vacuum environment by ion-assisted deposition on Si wafer and seeded glass substrates |
004041 |
J. W. Arkwright [Australie] | Fabrication of optical elements with better than λ/1000 thickness uniformity by thin-film deposition through a multi-aperture mask |
004042 |
Armin G. Aberle [Australie] | Fabrication and characterisation of crystalline silicon thin-film materials for solar cells |
004069 |
J. Stradal [Pays-Bas, Australie] ; G. Scholma [Pays-Bas] ; H. Li [Pays-Bas] ; C. H. M. Van Der Werf [Pays-Bas] ; J. K. Rath [Pays-Bas] ; P. I. Widenborg [Australie] ; P. Campbell [Australie] ; A. G. Aberle [Australie] ; R. E. I. Schropp [Pays-Bas] | Epitaxial thickening by hot wire chemical vapor deposition of polycrystalline silicon seed layers on glass |
004078 |
A. W. Achtstein [Allemagne] ; H. Karl [Allemagne] ; B. Stritzker [Allemagne] | Electric-field-controlled photoluminescence of CdSe nanocrystal-doped SiO2 on Si |
004410 |
M. Kuball [Royaume-Uni] ; J. W. Pomeroy [Royaume-Uni] ; M. Wintrebert-Fouquet [Australie] ; K. S. A. Butcher [Australie] ; HAI LU [États-Unis] ; W. J. Schaff [États-Unis] ; T. V. Shubina [Russie] ; S. V. Ivanov [Russie] ; A. Vasson [France] ; J. Leymarie [France] | Resonant Raman spectroscopy on InN |
004467 |
T. V. Shubina [Russie] ; S. V. Ivanov [Russie] ; V. N. Jmerik [Russie] ; M. M. Glazov [Russie] ; A. P. Kalvarskii [Russie] ; M. G. Tkachman [Russie] ; A. Vasson [France] ; J. Leymarie [France] ; A. Kavokin [France] ; H. Amano [Japon] ; I. Akasaki [Japon] ; K. S. A. Butcher [Australie] ; Q. Guo [Japon] ; B. Monemar [Suède] ; P. S. Kop'Ev [Russie] | Optical properties of InN with stoichoimetry violation and indium clustering |
004536 |
J. S. Williams [Australie] ; S. O. Kucheyev [Australie] ; H. H. Tan [Australie] ; J. Wong-Leung [Australie] ; C. Jagadish [Australie] | Ion irradiation-induced disordering of semiconductors: defect structures and applications |
004830 |
R. A. Lewis [Australie] ; Y.-J. Wang [États-Unis] ; M. Henini [Royaume-Uni] | Zeeman spectroscopy of be impurity in gaas to 30 T |
004F37 |
M.-O. Ruault [France] ; M. C. Ridgway [Australie] ; F. Fortuna [France] ; H. Bernas [France] ; J. S. Williams [Australie] | In-situ microscopy study of nanocavity shrinkage in Si under ion beam irradiation |
005879 |
B. Lough [Australie] ; S. P. Lee [Australie] ; R. A. Lewis [Australie] ; C. Zhang [Australie] | Electronic thermal transport and thermionic cooling in semiconductor multi-quantum-well structures |
006611 |
M. C. Peignon [France] ; G. Turban [France] ; C. Charles [Australie] ; R. W. Boswell [Australie] | Surface modelling of reactive ion etching of silicon-germanium alloys in a SF6 plasma |
006C26 |
D. G. Li [Australie] ; N. S. Mcalpine ; D. Haneman | Progression of cleavage in Si, Ge, and GaAs |
006E07 |
| ECO 4 : infrared and optoelectronic materials and devices, 12-14 March 1991, The Hague |
006E26 |
Y. Q. Cai [Australie] ; J. D. Riley ; R. C. G. Leckey ; B. Usher ; J. Fraxedas ; L. Ley [France] | Photoemission study of the electronic structure of a (GaAs)2/(AlAs)2 superlattice |