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Serveur d'exploration sur les relations entre la France et l'Australie

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List of bibliographic references

Number of relevant bibliographic references: 34.
Ident.Authors (with country if any)Title
000432 Dmitry Orlov [Japon] ; Rimma Lapovok [Australie] ; Laszlo S. Toth [France] ; Ilana B. Timokhina [Australie] ; Peter D. Hodgson [Australie] ; Arunansu Haldar [Royaume-Uni] ; Debashish Bhattacharjee [Royaume-Uni]Asymmetric Rolling of Interstitial-Free Steel Using Differential Roll Diameters. Part II: Microstructure and Annealing Effects
000C53 Bashir S. Shariat [Australie] ; YINONG LIU [Australie] ; Gerard Rio [France]Thermomechanical modelling of microstructurally graded shape memory alloys
001616 C. F. Gu [Australie] ; L. S. Toth [France] ; R. Lapovok [Australie] ; C. H. J. Davies [Australie]Texture evolution and grain refinement of ultrafine-grained copper during micro-extrusion
001978 Tsu-Tsung Andrew Li [Australie] ; Simon Ruffell [Australie] ; Mario Tucci [Italie] ; Yves Mansoulie [France] ; Christian Samundsett [Australie] ; Simona De Iullis [Italie] ; Luca Serenelli [Italie] ; Andres Cuevas [Australie]Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon
002114 Ö. Tüzün [France] ; Y. Qiu [Belgique] ; A. Slaoui [France] ; I. Gordon [Belgique] ; C. Maurice [France] ; S. Venkatachalam [Belgique] ; S. Chatterjee [France] ; G. Beaucarne [Belgique] ; J. Poortmans [Belgique]Properties of n-type polycrystalline silicon solar cells formed by aluminium induced crystallization and CVD thickening
002453 G. Dantelle [France] ; A. Slablab [France] ; L. Rondin [France] ; F. Laine [France] ; F. Carrel [France] ; Ph. Bergonzo [France] ; S. Perruchas [France] ; T. Gacoin [France] ; F. Treussart [France] ; J.-F. Roch [France]Efficient production of NV colour centres in nanodiamonds using high-energy electron irradiation
002515 B. C. Johnson [Australie] ; J. C. Mccallum [Australie] ; L. H. Willems Van Beveren [Australie] ; E. Gauja [Australie]Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
002785 Ali Youssef [Australie] ; Martial Pabon [Suisse] ; Romain Severac [France] ; Robert G. Gilbert [Australie]The Effect of Copolymer Composition on the Surface Properties of Perfluoroalkylethyl Acrylates
003777 Z. Wronski [Canada] ; R. A. Varin [Canada] ; C. Chiu [Canada] ; T. Czujko [Canada] ; A. Calka [Australie]Mechanochemical synthesis of nanostructured chemical hydrides in hydrogen alloying mills
003C58 Tadamasa Kimura [Japon] ; Katsuaki Masaki [Japon] ; Hideo Isshiki [Japon]Study on crystalline properties of Er-Si-O compounds in relation to Er-related 1.54 μm photoluminescence and electrical properties
003C95 P. Janda [République tchèque] ; J. Valenta [République tchèque] ; T. Ostatnicky [République tchèque] ; E. Skopalova [République tchèque] ; I. Pelant [République tchèque] ; R. G. Elliman [Australie] ; R. Tomasiunas [Lituanie]Silicon nanocrystals in silica-Novel active waveguides for nanophotonics
003D73 XIUYU SUN [République populaire de Chine] ; FAQIANG XU [République populaire de Chine] ; ZONGMU LI [République populaire de Chine] ; WENHUA ZHANG [République populaire de Chine]Photoluminescence properties of anodic alumina membranes with ordered nanopore arrays
003D75 B. Salem [France] ; P. Noe [France] ; F. Mazen [France] ; V. Calvo [France] ; E. Hadji [France]Photoluminescence from Er-doped silicon rich oxide thin films
003D76 A. Arbouet [France] ; M. Carrada [France] ; F. Demangeot [France] ; V. Paillard [France] ; G. Benassayag [France] ; C. Bonafos [France] ; A. Claverie [France] ; S. Schamm [France] ; C. Dumas [France] ; J. Grisolia [France] ; M. A. F. Van Den Boogaart [Suisse] ; J. Brugger [Suisse] ; L. Doeswijk [Suisse]Photoluminescence characterization of few-nanocrystals electronic devices
003E05 N. Daldosso [Italie] ; M. Melchiorri [Italie] ; L. Pavesi [Italie] ; G. Pucker [Italie] ; F. Gourbilleau [France] ; S. Chausserie [France] ; Ali Belarouci [France] ; X. Portier [France] ; C. Dufour [France]Optical losses and absorption cross-section of silicon nanocrystals
003F33 R. Singh [Allemagne] ; I. Radu [Allemagne] ; R. Scholz [Allemagne] ; C. Himcinschi [Allemagne] ; U. Gösele [Allemagne] ; S. H. Christiansen [Allemagne]Investigation of helium implantation induced blistering in InP
003F41 A. Meldrum [Canada] ; A. Hryciw [Canada] ; A. N. Macdonald [Canada] ; C. Blois [Canada] ; T. Clement [Canada] ; R. Decorby [Canada] ; J. Wang [Hong Kong] ; QUAN LI [Hong Kong]Interaction between rare-earth ions and amorphous silicon nanoclusters produced at low processing temperatures
003F48 G. Wora Adeola [France] ; H. Rinnert [France] ; P. Miska [France] ; M. Vergnat [France]Influence of the SiO thickness on the photoluminescence properties of Er-doped SiO/SiO2 multilayers
004054 S. Dabboussi [Tunisie] ; H. Elhouichet [Tunisie] ; H. Ajlani [Tunisie] ; A. Moadhen [Tunisie] ; M. Oueslati [Tunisie] ; J. A. Roger [France]Excitation process and photoluminescence properties of Tb3+and Eu3+ ions in SnO2 and in SnO2 : Porous silicon hosts
004123 Anna Muscara [Italie] ; Maria Eloisa Castagna [Italie] ; Salvatore Leonardi [Italie] ; Salvatore Coffa [Italie] ; Liliana Caristia [Italie] ; Simona Lorenti [Italie]Design and electro-optical characterization of Si-based resonant cavity light emitting devices at 850nm
004166 O. Jambois [Espagne] ; A. Vila [Espagne] ; P. Pellegrino [Espagne] ; J. Carreras [Espagne] ; A. Pbrez-Rodriguez [Espagne] ; B. Garrido [Espagne] ; C. Bonafos [France] ; G. Benassayag [France]Charge transport along luminescent oxide layers containing Si and SiC nanoparticles
004536 J. S. Williams [Australie] ; S. O. Kucheyev [Australie] ; H. H. Tan [Australie] ; J. Wong-Leung [Australie] ; C. Jagadish [Australie]Ion irradiation-induced disordering of semiconductors: defect structures and applications
004D75 A. S. Wendt [Royaume-Uni] ; O. Vidal [France] ; L. T. Chadderton [Australie]The effect of simultaneous temperature, pressure and stress on the experimental annealing of spontaneous fission tracks in apatite: a brief overview
004E20 Lars Oberbeck [Australie] ; Toby Hallam [Australie] ; Neil J. Curson [Australie] ; Michelle Y. Simmons [Australie] ; Robert G. Clark [Australie]STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computer
005369 S. Kaciulis [Italie] ; L. Pandolfi [Italie] ; S. Viticoli [Italie] ; G. Sberveglieri [Italie] ; E. Zampiceni [Italie] ; W. Wlodarski [Australie] ; K. Galatsis [Australie] ; Y. X. Li [Australie]Investigation of thin films of mixed oxides for gas-sensing applications
005680 X. T. Tang [République populaire de Chine] ; Y. Zhao [Australie] ; Y. Z. Wang [République populaire de Chine] ; S. H. Han [République populaire de Chine] ; H. Zhang [République populaire de Chine]Structure of Bi2Sr2CaCu2Oy single crystals in different atmosphere
005689 Y. Liu [Australie] ; D. Favier [France]Stability of ageing-induced multiple-stage transformation behaviour in a Ti-50.15%Ni alloy
005808 K. Kowalski [France] ; M. Ijjaali [France] ; T. Bak [Australie] ; B. Dupre [France] ; J. Nowotny [Australie] ; M. Rekas [Australie] ; C. C. Sorrell [Australie]Kinetics of Nb incorporation into barium titanate
005881 K. Kowalski [France] ; M. Ijjaali [France] ; T. Bak [Australie] ; B. Dupre [France] ; J. Nowotny [Australie] ; M. Rekas [Australie] ; C. C. Sorrell [Australie]Electrical properties of Nb-doped BaTiO3
005890 K. Kowalski [France] ; M. Ijjaali [France] ; T. Bak [Australie] ; B. Dupre [France] ; J. Nowotny [Australie] ; M. Rekas [Australie] ; C. C. Sorrell [Australie]Effect of oxygen activity on Nb solubility in BaTiO3
006257 I. A. Campbell [France] ; J. Hammann [France] ; H. Kawamura [Japon] ; R. H. Mckenzie [Australie] ; P. Nordblad [Suède] ; R. Orbach [États-Unis] ; H. Takayama [Japon]Spin-glass dynamics
006340 V. S. Amaral [Portugal] ; J. G. Correia [États-Unis, Portugal] ; A. A. C. S. Lourenco [France, Portugal] ; J. G. Marques [Portugal] ; J. A. Mendes [Portugal] ; M. A. Baptista [Portugal] ; J. P. Araujo [Portugal] ; J. M. Moreira [Portugal] ; J. B. Sousa [Portugal] ; E. Alves [Portugal] ; M. F. Da Silva [Portugal] ; J. C. Soares [Portugal]Microscopic studies of radioactive Hg implanted in YBa2Cu3O6+x superconducting thin films
006440 S. Cheylan [Australie] ; N. B. Manson [Australie] ; R. G. Elliman [Australie]Dose dependence of room temperature photoluminescence from Si implanted SiO2
006891 E. Finkman [Israël] ; J. Boulmer [France] ; P. Boucaud [France] ; C. Guedj [France] ; D. Bouchier [France] ; K. Nugent [Australie] ; S. Prawer [Australie]Raman spectroscopy of Si1-x-yGexCy layers obtained by pulsed laser induced epitaxy
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