| Ident. | Authors (with country if any) | Title |
|---|
| 000980 |
S. Y. Lim [Australie] ; M. Forster [France] ; D. Macdonald [Australie] | Estimation of solidification interface shapes in a boron-phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging |
| 000987 |
Cuong Ton-That [Australie] ; Thien-Phap Nguyen [France] ; YI DAN [République populaire de Chine] | Enhanced photoluminescence of polyfluorene by incorporation of Al-doped ZnO nanoparticles |
| 000A72 |
Camilo Zamora-Ledezma [France, Venezuela] ; Lionel Buisson [France] ; Simon E. Moulton [Australie] ; Gordon Wallace [Australie] ; Cécile Zakri [France] ; Christophe Blanc [France] ; Eric Anglaret [France] ; Philippe Poulin [France] | Carbon Nanotubes Induced Gelation of Unmodified Hyaluronic Acid |
| 001958 |
J. P. Zou [France, République populaire de Chine] ; P. Le Rendu [France] ; I. Musa [France] ; S. H. Yang [Taïwan] ; Y. Dan [République populaire de Chine] ; C. Ton That [Australie] ; T. P. Nguyen [France] | Investigation of the optical properties of polyfluorene/ZnO nanocomposites |
| 001B36 |
O. Lupan [France, Moldavie] ; T. Pauporte [France] ; B. Viana [France] ; P. Aschehoug [France] | Electrodeposition of Cu-doped ZnO nanowire arrays and heterojunction formation with p-GaN for color tunable light emitting diode applications |
| 003040 |
E. Wu [France, République populaire de Chine] ; J. R. Rabeau [Australie] ; F. Treussart [France] ; H. Zeng [République populaire de Chine] ; P. Grangier [France] ; S. Prawer [Australie] ; J.-F. Roch [France] | Nonclassical photon statistics in a single nickel-nitrogen diamond color center photoluminescence at room temperature |
| 003083 |
I. Nevares [Espagne] ; M. Del Alamo [Espagne] | Measurement of dissolved oxygen during red wines tank aging with chips and micro-oxygenation |
| 003094 |
Cuong Ton-That [Australie] ; Geoff Stockton [Australie] ; Matthew R. Phillips [Australie] ; Thien-Phap Nguyen [France] ; CHUN HAO HUANG [France] ; Ala Cojocaru [Moldavie] | Luminescence properties of poly(phenylene vinylene) derivatives |
| 003379 |
Cuong Ton-That [Australie] ; Matthew R. Phillips [Australie] ; Thien-Phap Nguyen [France] | Blue shift in the luminescence spectra of MEH-PPV films containing ZnO nanoparticles |
| 003765 |
Petr Janda [République tchèque] ; Jan Valenta [République tchèque] ; Jean-Luc Rehspringer [France] ; Rodrigue R. Mafouana [France] ; Jan Linnros [Suède] ; Robert G. Elliman [Australie] | Modified spontaneous emission of silicon nanocrystals embedded in artificial opals |
| 003B83 |
P. Vergeer [Pays-Bas] ; E. Van Den Pol [Pays-Bas] ; A. Meijerink [Pays-Bas] | Time and temperature dependence of the emissions from the quantum-cutting phosphor LiGdF4: Eu3+ |
| 003B89 |
Numan Salah [Inde] ; P. D. Sahare [Inde] ; Awadhesh Prasad [Inde] | Thermoluminescence and photoluminescence of LiNaSO4:Eu irradiated with 24 and 48 MeV 7Li ion beam |
| 003C10 |
M. Miritello [Italie] ; R. Lo Savio [Italie] ; F. Iacona [Italie] ; G. Franzo [Italie] ; C. Bongiorno [Italie] ; A. Irrera [Italie] ; F. Priolo [Italie] | The influence of substrate on the properties of Er2O3 films grown by magnetron sputtering |
| 003C46 |
S. C. Gedam [Inde] ; S. J. Dhoble [Inde] ; S. V. Moharil [Inde] | Synthesis and effect of Ce3+ co-doping on photoluminescence characteristics of KZnSO4Cl: M (M = Dy3+ or Mn2+) new phosphors |
| 003C50 |
T. V. Shubina [Russie] ; D. S. Plotnikov [Russie] ; A. Vasson [France] ; J. Leymarie [France] ; M. Larsson [France] ; P. O. Holtz [Suède] ; B. Monemar [Suède] ; HAI LU [États-Unis] ; W. J. Schaff [États-Unis] ; P. S. Kop'Ev [Russie] | Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 003C56 |
F. Trojanek [République tchèque] ; K. Zidek [République tchèque] ; K. Neudert [République tchèque] ; I. Pelant [République tchèque] ; P. Maty [République tchèque] | Superlinear photoluminescence in silicon nanocrystals : The role of excitation wavelength |
| 003C58 |
Tadamasa Kimura [Japon] ; Katsuaki Masaki [Japon] ; Hideo Isshiki [Japon] | Study on crystalline properties of Er-Si-O compounds in relation to Er-related 1.54 μm photoluminescence and electrical properties |
| 003C59 |
D. Colombo [Italie] ; E. Grilli [Italie] ; M. Guzzi [Italie] ; S. Sanguinetti [Italie] ; A. Fedorov [Italie, Russie] ; H. Von K Nel [Italie] ; G. Isella [Italie] | Study of thermal strain relaxation in GaAs grown on Ge/Si substrates Study of thermal strain relaxation in GaAs grown on Ge/Si substrates |
| 003C63 |
I. Sychugov [Suède] ; J. Lu [Suède] ; N. Elfström [Suède] ; J. Linnros [Suède] | Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization |
| 003C66 |
HAIMING ZHANG [République populaire de Chine] ; YAN CUI [République populaire de Chine] ; YUNGE MEN [République populaire de Chine] ; XUSHENG LIU [République populaire de Chine] | Strong ultraviolet emission from zinc oxide thin films prepared by electrophoretic deposition |
| 003C94 |
Gavin Conibeer [Australie] ; Martin Green [Australie] ; Richard Corkish [Australie] ; Young Cho [Australie] ; Eun-Chel Cho [Corée du Sud] ; Chu-Wei Jiang [Australie] ; Thipwan Fangsuwannarak [Australie] ; Edwin Pink [Australie] ; YIDAN HUANG [Australie] ; Tom Puzzer [Australie] ; Thorsten Trupke [Australie] ; Bryce Richards [Australie] ; Avi Shalav [Australie] ; Kuo-Lung Lin [Australie] | Silicon nanostmctures for third generation photovoltaic solar cells |
| 003C95 |
P. Janda [République tchèque] ; J. Valenta [République tchèque] ; T. Ostatnicky [République tchèque] ; E. Skopalova [République tchèque] ; I. Pelant [République tchèque] ; R. G. Elliman [Australie] ; R. Tomasiunas [Lituanie] | Silicon nanocrystals in silica-Novel active waveguides for nanophotonics |
| 003C97 |
X. Li [France] ; P. Boucaud [France] ; X. Checoury [France] ; M. El Kurdi [France] ; S. David [France] ; S. Sauvage [France] ; N. Yam [France] ; F. Fossard [France] ; D. Bouchier [France] ; J. M. Fedeli [France] ; V. Calvo [France] ; E. Hadji [France] ; A. Salomon [France] | Si-based two-dimensional photonic crystals coupled to one-dimensional Bragg mirrors |
| 003C99 |
Maria Eloisa Castagna [Italie] ; Anna Muscara [Italie] ; Salvatore Leonardi [Italie] ; Salvatore Coffa [Italie] ; Liliana Caristia [Italie] ; Cristina Tringali [Italie] ; Simona Lorenti [Italie] | Si-based erbium-doped light-emitting devices |
| 003D67 |
L. Mangolini [États-Unis] ; D. Jurbergs [États-Unis] ; E. Rogojina [États-Unis] ; U. Kortshagen [États-Unis] | Plasma synthesis and liquid-phase surface passivation of brightly luminescent Si nanocrystals |
| 003D73 |
XIUYU SUN [République populaire de Chine] ; FAQIANG XU [République populaire de Chine] ; ZONGMU LI [République populaire de Chine] ; WENHUA ZHANG [République populaire de Chine] | Photoluminescence properties of anodic alumina membranes with ordered nanopore arrays |
| 003D74 |
B. M. Monroy [Mexique] ; G. Santana [Mexique] ; J. Aguilar-Hernandez [Mexique] ; A. Benami [Mexique] ; J. Fandino [Mexique] ; A. Ponce [Mexique] ; G. Contreras-Puente [Mexique] ; A. Ortiz [Mexique] ; J. C. Alonso [Mexique] | Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition |
| 003D75 |
B. Salem [France] ; P. Noe [France] ; F. Mazen [France] ; V. Calvo [France] ; E. Hadji [France] | Photoluminescence from Er-doped silicon rich oxide thin films |
| 003D76 |
A. Arbouet [France] ; M. Carrada [France] ; F. Demangeot [France] ; V. Paillard [France] ; G. Benassayag [France] ; C. Bonafos [France] ; A. Claverie [France] ; S. Schamm [France] ; C. Dumas [France] ; J. Grisolia [France] ; M. A. F. Van Den Boogaart [Suisse] ; J. Brugger [Suisse] ; L. Doeswijk [Suisse] | Photoluminescence characterization of few-nanocrystals electronic devices |
| 003E03 |
A. Belarouci [France] ; F. Gourbilleau [France] ; R. Rizk [France] | Optical properties from SRSO/SiO2 multilayers in planar microcavities |
| 003E37 |
D. Breard [France] ; F. Gourbilleau [France] ; A. Belarouci [France] ; C. Dufour [France] ; R. Rizk [France] | Nd3+ photoluminescence study of Nd-doped Si-rich silica films obtained by reactive magnetron sputtering |
| 003E55 |
N. V. Gaponenko [Biélorussie] ; D. M. Unuchak [Biélorussie] ; A. V. Mudryi [Biélorussie] ; G. K. Malyarevich [Biélorussie] ; O. B. Gusev [Russie] ; M. V. Stepikhova [Russie] ; L. V. Krasilnikova [Russie] ; A. P. Stupak [Biélorussie] ; S. M. Kleshcheva [Russie] ; M. I. Samoilovich [Russie] ; M. Yu. Tsvetkov [Russie] | Modification of erbium photoluminescence excitation spectra for the emission wavelength 1.54 μm in mesoscopic structures |
| 003E99 |
Volker Bachmann [Allemagne, Pays-Bas] ; Thomas Jüstel [Allemagne] ; Andries Meijerink [Pays-Bas] ; Cees Ronda [Allemagne, Pays-Bas] ; Peter J. Schmidt [Allemagne] | Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions |
| 003F00 |
Z. T. Kang [États-Unis] ; Y. Liu [États-Unis] ; B. K. Wagner [États-Unis] ; R. Gilstrap [États-Unis] ; M. Liu [États-Unis] ; C. J. Summers [États-Unis] | Luminescence properties of Mn2+ doped Zn2SiO4 phosphor films synthesized by combustion CVD |
| 003F01 |
Y. Kawabe [Japon] ; A. Yamanaka [Japon] ; H. Horiuchi [Japon] ; H. Takashima [Japon] ; E. Hanamura [Japon] | Luminescence of color centers formed in alkali-earth-doped yttrium orthoaluminate crystals |
| 003F02 |
Shinobu Fujihara [Japon] ; Yoshiki Shibata [Japon] | Luminescence of Cr3+ ions associated with surpassing the green-emissive defect centers in β-Ga2O3 |
| 003F03 |
B. Kunert [Allemagne] ; K. Volz [Allemagne] ; I. Nemeth [Allemagne] ; W. Stolz [Allemagne] | Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system |
| 003F13 |
James E. Martin [États-Unis] ; Lauren E. Shea-Rohwer [États-Unis] | Lifetime determination of materials that exhibit a stretched exponential luminescent decay |
| 003F41 |
A. Meldrum [Canada] ; A. Hryciw [Canada] ; A. N. Macdonald [Canada] ; C. Blois [Canada] ; T. Clement [Canada] ; R. Decorby [Canada] ; J. Wang [Hong Kong] ; QUAN LI [Hong Kong] | Interaction between rare-earth ions and amorphous silicon nanoclusters produced at low processing temperatures |
| 003F48 |
G. Wora Adeola [France] ; H. Rinnert [France] ; P. Miska [France] ; M. Vergnat [France] | Influence of the SiO thickness on the photoluminescence properties of Er-doped SiO/SiO2 multilayers |
| 003F51 |
A. Fonseca [Portugal] ; N. A. Sobolev [Portugal] ; J. P. Leitao [Portugal] ; E. Alves [Portugal] ; M. C. Carmo [Portugal] ; N. D. Zakharov [Allemagne] ; P. Werner [Allemagne] ; A. A. Tonkikh [Russie] ; G. E. Cirlin [Russie] | Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice |
| 004054 |
S. Dabboussi [Tunisie] ; H. Elhouichet [Tunisie] ; H. Ajlani [Tunisie] ; A. Moadhen [Tunisie] ; M. Oueslati [Tunisie] ; J. A. Roger [France] | Excitation process and photoluminescence properties of Tb3+and Eu3+ ions in SnO2 and in SnO2 : Porous silicon hosts |
| 004072 |
D. A. Simpson [Australie] ; G. W. Baxter [Australie] ; S. F. Collins [Australie] ; W. E. K. Gibbs [Australie] ; W. Blanc [France] ; B. Dussardier [France] ; G. Monnom [France] | Energy transfer up-conversion in Tm3+-doped silica fiber |
| 004075 |
K. Dohnalovi [République tchèque] ; K. Kusova [République tchèque] ; I. Pelant [République tchèque] ; J. Valenta [République tchèque] ; P. Gilliot [France] ; M. Gallart [France] ; O. Cregut [France] ; J. L. Rehspringer [France] ; B. Hönerlage [France] | Emission properties of a distributed feedback laser cavity containing silicon nanocrystals |
| 004078 |
A. W. Achtstein [Allemagne] ; H. Karl [Allemagne] ; B. Stritzker [Allemagne] | Electric-field-controlled photoluminescence of CdSe nanocrystal-doped SiO2 on Si |
| 004101 |
Federico Iori [Italie] ; Elena Degoli [Italie] ; Eleonora Luppi [Italie] ; Rita Magri [Italie] ; Ivan Marri [Italie] ; G. Cantele [Italie] ; D. Ninno [Italie] ; F. Trani [Italie] ; Stefano Ossicini [Italie] | Doping in silicon nanocrystals : An ab initio study of the structural, electronic and optical properties |
| 004102 |
HUAMEI SHANG [États-Unis] ; YING WANG [États-Unis] ; Brian Milbrath [États-Unis] ; Mary Bliss [États-Unis] ; GUOZHONG CAO [États-Unis] | Doping effects in nanostructured cadmium tungstate scintillation films |
| 004123 |
Anna Muscara [Italie] ; Maria Eloisa Castagna [Italie] ; Salvatore Leonardi [Italie] ; Salvatore Coffa [Italie] ; Liliana Caristia [Italie] ; Simona Lorenti [Italie] | Design and electro-optical characterization of Si-based resonant cavity light emitting devices at 850nm |
| 004126 |
J. Bak-Misiuk [Pologne] ; A. Misiuk [Pologne] ; P. Romanowski [Pologne] ; A. Wnuk [Pologne] ; J. Trela [Pologne] | Defect-related light emission from processed He-implanted silicon |
| 004136 |
J. Skov Jensen [Danemark] ; G. Franzo [Italie] ; T. P. Leervad Petersen [Danemark] ; R. Pereira [Danemark] ; J. Chevallier [Danemark] ; M. Christian Petersen [Danemark] ; B. Bech Nielsen [Danemark] ; A. Nylandsted Larsen [Danemark] | Coupling between Ge-nanocrystals and defects in SiO2 |
| 004177 |
E. V. Vanin [Suède] ; A. M. Grishin [Suède] ; S. I. Khartsev [Suède] ; O. Tarasenko [Suède] ; P. Johansson [Suède] | Broadband photoluminescence from pulsed laser deposited Er2O3 films |
| 004201 |
E. Mihokova [République tchèque] ; L. S. Schulman [États-Unis] ; K. Polak [République tchèque] | Anomalous decay and breather formation in doped alkali halides |
| 004212 |
A. J. Kenyon [Royaume-Uni] ; W. H. Loh [Royaume-Uni] ; C. J. Oton [Royaume-Uni] ; I. Ahmad [Royaume-Uni] | An analysis of erbium excited state absorption in silicon-rich silica |
| 004229 |
R. A. Sa Ferreira [Portugal] ; S. S. Nobre [Portugal] ; C. M. Granadeiro [Portugal] ; H. I. S. Nogueira [Portugal] ; L. D. Carlos [Portugal] ; O. L. Malta [Portugal, Brésil] | A theoretical interpretation of the abnormal 5D0→7F4 intensity based on the Eu3+ local coordination in the Na9[EuW10O36]. 14H2O polyoxometalate |
| 004261 |
A. Podhorodecki [Pologne] ; J. Misiewicz [Pologne] ; J. Wojcik [Canada] ; E. Irving [Canada] ; P. Mascher [Canada] | 1.54 μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD |
| 004453 |
T. Ostatnicky [République tchèque, France] ; J. Valenta [République tchèque] ; I. Pelant [République tchèque] ; K. Luterova [République tchèque] ; R. G. Elliman [Australie] ; S. Cheylan [Espagne] ; B. Hönerlage [France] | Photoluminescence from an active planar optical waveguide made of silicon nanocrystals: dominance of leaky substrate modes in dissipative structures |
| 004468 |
K. Luterova [République tchèque, France] ; M. Cazzanelli [Italie] ; J.-P. Likforman [France] ; D. Navarro [Italie] ; J. Valenta [République tchèque] ; T. Ostatnicky [France, République tchèque] ; K. Dohnalova [République tchèque, France] ; S. Cheylan [Australie] ; P. Gilliot [France] ; B. Hönerlage [France] ; L. Pavesi [Italie] ; I. Pelant [République tchèque] | Optical gain in nanocrystalline silicon: comparison of planar waveguide geometry with a non-waveguiding ensemble of nanocrystals |
| 004869 |
R. T. Cox [France] ; R. B. Miller [Australie] ; K. Saminadayar [France] ; T. Baron [France] | Trions, excitons, and scattering states in multiple quantum wells with a variable-concentration electron gas |
| 004A79 |
Bénédicte Maleyre [France] ; Olivier Briot [France] ; Sandra Ruffenach [France] | MOVPE growth of InN films and quantum dots |
| 004A87 |
Peter J. Recce [Australie] ; Michael Gal [Australie] ; Gilles Lerondel [France] ; H. Hoe Tan [Australie] ; Chenupati Jagadish [Australie] | Light emission from 1D silicon photonic crystals containing erbium |
| 004C89 |
O. Briot [France] ; B. Maleyre [France] ; S. Ruffenach [France] ; B. Gil [France] ; C. Pinquier [France] ; F. Demangeot [France] ; J. Frandon [France] | Absorption and Raman scattering processes in InN films and dots |
| 005460 |
Jai Singh [Australie] | Effective mass of charge carriers in amorphous semiconductors and its applications |
| 006440 |
S. Cheylan [Australie] ; N. B. Manson [Australie] ; R. G. Elliman [Australie] | Dose dependence of room temperature photoluminescence from Si implanted SiO2 |
| 006974 |
M. R. Phillips [Australie] ; M. A. S. Kalceff [Australie] ; A. R. Moon [Australie] | Cathodoluminescence spectroscopie of natural zircon |
