Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System.
Identifieur interne : 002F47 ( Ncbi/Merge ); précédent : 002F46; suivant : 002F48Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System.
Auteurs : María De La Mata [Espagne] ; Renaud Leturcq [France] ; Sébastien R. Plissard [France] ; Chloé Rolland [France] ; César Magén [Espagne] ; Jordi Arbiol [Espagne] ; Philippe Caroff [France]Source :
- Nano letters [ 1530-6992 ] ; 2016.
Abstract
Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12,000 cm(2)·V(-1)·s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.
DOI: 10.1021/acs.nanolett.5b05125
PubMed: 26733426
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08193 Barcelona</wicri:regionArea><placeName><settlement type="city">Barcelone</settlement><region nuts="2" type="region">Catalogne</region></placeName></affiliation></author><author><name sortKey="Leturcq, Renaud" sort="Leturcq, Renaud" uniqKey="Leturcq R" first="Renaud" last="Leturcq">Renaud Leturcq</name><affiliation wicri:level="1"><nlm:affiliation>Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France.</nlm:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq</wicri:regionArea><wicri:noRegion>59652 Villeneuve d'Ascq</wicri:noRegion><wicri:noRegion>59652 Villeneuve d'Ascq</wicri:noRegion></affiliation></author><author><name sortKey="Plissard, Sebastien R" sort="Plissard, Sebastien R" uniqKey="Plissard S" first="Sébastien R" 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Plissard</name><affiliation wicri:level="1"><nlm:affiliation>CNRS-Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), Université de Toulouse , 7 avenue du colonel Roche, 31400 Toulouse, France.</nlm:affiliation><country xml:lang="fr">France</country><wicri:regionArea>CNRS-Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), Université de Toulouse , 7 avenue du colonel Roche, 31400 Toulouse</wicri:regionArea><wicri:noRegion>31400 Toulouse</wicri:noRegion><placeName><settlement type="city">Toulouse</settlement><region type="region" nuts="2">Occitanie (région administrative)</region><region type="old region" nuts="2">Midi-Pyrénées</region></placeName></affiliation></author><author><name sortKey="Rolland, Chloe" sort="Rolland, Chloe" uniqKey="Rolland C" first="Chloé" last="Rolland">Chloé Rolland</name><affiliation wicri:level="1"><nlm:affiliation>Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France.</nlm:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq</wicri:regionArea><wicri:noRegion>59652 Villeneuve d'Ascq</wicri:noRegion><wicri:noRegion>59652 Villeneuve d'Ascq</wicri:noRegion></affiliation></author><author><name sortKey="Magen, Cesar" sort="Magen, Cesar" uniqKey="Magen C" first="César" last="Magén">César Magén</name><affiliation wicri:level="1"><nlm:affiliation>Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragon (INA) -ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza , 50018 Zaragoza, Spain.</nlm:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragon (INA) -ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza , 50018 Zaragoza</wicri:regionArea><wicri:noRegion>50018 Zaragoza</wicri:noRegion></affiliation></author><author><name sortKey="Arbiol, Jordi" sort="Arbiol, Jordi" uniqKey="Arbiol J" first="Jordi" last="Arbiol">Jordi Arbiol</name><affiliation wicri:level="1"><nlm:affiliation>Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain.</nlm:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona</wicri:regionArea><placeName><settlement type="city">Barcelone</settlement><region nuts="2" type="region">Catalogne</region></placeName></affiliation></author><author><name sortKey="Caroff, Philippe" sort="Caroff, Philippe" uniqKey="Caroff P" first="Philippe" last="Caroff">Philippe Caroff</name><affiliation wicri:level="1"><nlm:affiliation>Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France.</nlm:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq</wicri:regionArea><wicri:noRegion>59652 Villeneuve d'Ascq</wicri:noRegion><wicri:noRegion>59652 Villeneuve d'Ascq</wicri:noRegion></affiliation></author></analytic><series><title level="j">Nano letters</title><idno type="eISSN">1530-6992</idno><imprint><date when="2016" type="published">2016</date></imprint></series></biblStruct></sourceDesc></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12,000 cm(2)·V(-1)·s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.</div></front></TEI><pubmed><MedlineCitation Status="PubMed-not-MEDLINE" Owner="NLM"><PMID Version="1">26733426</PMID><DateCreated><Year>2016</Year><Month>02</Month><Day>10</Day></DateCreated><DateCompleted><Year>2016</Year><Month>07</Month><Day>18</Day></DateCompleted><DateRevised><Year>2016</Year><Month>02</Month><Day>10</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1530-6992</ISSN><JournalIssue CitedMedium="Internet"><Volume>16</Volume><Issue>2</Issue><PubDate><Year>2016</Year><Month>Feb</Month><Day>10</Day></PubDate></JournalIssue><Title>Nano letters</Title><ISOAbbreviation>Nano Lett.</ISOAbbreviation></Journal><ArticleTitle>Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System.</ArticleTitle><Pagination><MedlinePgn>825-33</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/acs.nanolett.5b05125</ELocationID><Abstract><AbstractText>Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12,000 cm(2)·V(-1)·s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>de la Mata</LastName><ForeName>María</ForeName><Initials>M</Initials><AffiliationInfo><Affiliation>Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Leturcq</LastName><ForeName>Renaud</ForeName><Initials>R</Initials><AffiliationInfo><Affiliation>Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France.</Affiliation></AffiliationInfo><AffiliationInfo><Affiliation>Materials Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology (LIST) , 5, avenue des Hauts-Fourneaux, L-4362 Esch-sur-Alzette, Luxembourg.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Plissard</LastName><ForeName>Sébastien R</ForeName><Initials>SR</Initials><AffiliationInfo><Affiliation>CNRS-Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), Université de Toulouse , 7 avenue du colonel Roche, 31400 Toulouse, France.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Rolland</LastName><ForeName>Chloé</ForeName><Initials>C</Initials><AffiliationInfo><Affiliation>Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Magén</LastName><ForeName>César</ForeName><Initials>C</Initials><AffiliationInfo><Affiliation>Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragon (INA) -ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza , 50018 Zaragoza, Spain.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Arbiol</LastName><ForeName>Jordi</ForeName><Initials>J</Initials><AffiliationInfo><Affiliation>Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain.</Affiliation></AffiliationInfo><AffiliationInfo><Affiliation>Institució Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, Catalonia, Spain.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Caroff</LastName><ForeName>Philippe</ForeName><Initials>P</Initials><AffiliationInfo><Affiliation>Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France.</Affiliation></AffiliationInfo><AffiliationInfo><Affiliation>Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 0200, Australia.</Affiliation></AffiliationInfo></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType UI="D016428">Journal Article</PublicationType><PublicationType UI="D013485">Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2016</Year><Month>01</Month><Day>11</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Nano Lett</MedlineTA><NlmUniqueID>101088070</NlmUniqueID><ISSNLinking>1530-6984</ISSNLinking></MedlineJournalInfo><KeywordList Owner="NOTNLM"><Keyword MajorTopicYN="N">Cs-corrected scanning transmission electron microscopy</Keyword><Keyword MajorTopicYN="N">Hall measurements</Keyword><Keyword MajorTopicYN="N">III−V semiconductor</Keyword><Keyword MajorTopicYN="N">molecular beam epitaxy</Keyword><Keyword MajorTopicYN="N">nanowires</Keyword><Keyword MajorTopicYN="N">quantum point contact</Keyword></KeywordList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2016</Year><Month>1</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2016</Year><Month>1</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2016</Year><Month>1</Month><Day>7</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">26733426</ArticleId><ArticleId IdType="doi">10.1021/acs.nanolett.5b05125</ArticleId></ArticleIdList></PubmedData></pubmed><affiliations><list><country><li>Espagne</li><li>France</li></country><region><li>Catalogne</li><li>Midi-Pyrénées</li><li>Occitanie (région administrative)</li></region><settlement><li>Barcelone</li><li>Toulouse</li></settlement></list><tree><country 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Plissard</name><name sortKey="Rolland, Chloe" sort="Rolland, Chloe" uniqKey="Rolland C" first="Chloé" last="Rolland">Chloé Rolland</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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