Progression of cleavage in Si, Ge, and GaAs
Identifieur interne : 00EB92 ( Main/Merge ); précédent : 00EB91; suivant : 00EB93Progression of cleavage in Si, Ge, and GaAs
Auteurs : D. G. Li [Australie] ; N. S. Mcalpine ; D. HanemanSource :
- Applied surface science [ 0169-4332 ] ; 1993.
Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
The time of crack travel across thin crystalline wafers has been measured for Si, Ge, and GaAs, by monitoring the resistance across the cleavage. Contrary to supposition, the times and velocities vary greatly, by up to two orders of magnitude, for ostensibly similar conditions. In the cases of Si and Ge the cracks can pause and partially heal before final separation. The healing phenomena are only consistent with cleavage surface models that feature surface reconstructions that are reversible on recontact. The models are discussed
Links toward previous steps (curation, corpus...)
- to stream PascalFrancis, to step Corpus: 006F10
- to stream PascalFrancis, to step Curation: 006183
- to stream PascalFrancis, to step Checkpoint: 006C26
Links to Exploration step
Pascal:93-0466226Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Progression of cleavage in Si, Ge, and GaAs</title><author><name sortKey="Li, D G" sort="Li, D G" uniqKey="Li D" first="D. G." last="Li">D. G. Li</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Univ. New South Wales, school physics</s1><s2>Kensington N.S.W. 2033</s2><s3>AUS</s3></inist:fA14><country>Australie</country><wicri:noRegion>Kensington N.S.W. 2033</wicri:noRegion></affiliation></author><author><name sortKey="Mcalpine, N S" sort="Mcalpine, N S" uniqKey="Mcalpine N" first="N. S." last="Mcalpine">N. S. Mcalpine</name></author><author><name sortKey="Haneman, D" sort="Haneman, D" uniqKey="Haneman D" first="D." last="Haneman">D. Haneman</name></author></titleStmt><publicationStmt><idno type="wicri:source">INIST</idno><idno type="inist">93-0466226</idno><date when="1993">1993</date><idno type="stanalyst">PASCAL 93-0466226 INIST</idno><idno type="RBID">Pascal:93-0466226</idno><idno type="wicri:Area/PascalFrancis/Corpus">006F10</idno><idno type="wicri:Area/PascalFrancis/Curation">006183</idno><idno type="wicri:Area/PascalFrancis/Checkpoint">006C26</idno><idno type="wicri:explorRef" wicri:stream="PascalFrancis" wicri:step="Checkpoint">006C26</idno><idno type="wicri:doubleKey">0169-4332:1993:Li D:progression:of:cleavage</idno><idno type="wicri:Area/Main/Merge">00EB92</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Progression of cleavage in Si, Ge, and GaAs</title><author><name sortKey="Li, D G" sort="Li, D G" uniqKey="Li D" first="D. G." last="Li">D. G. Li</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Univ. New South Wales, school physics</s1><s2>Kensington N.S.W. 2033</s2><s3>AUS</s3></inist:fA14><country>Australie</country><wicri:noRegion>Kensington N.S.W. 2033</wicri:noRegion></affiliation></author><author><name sortKey="Mcalpine, N S" sort="Mcalpine, N S" uniqKey="Mcalpine N" first="N. S." last="Mcalpine">N. S. Mcalpine</name></author><author><name sortKey="Haneman, D" sort="Haneman, D" uniqKey="Haneman D" first="D." last="Haneman">D. Haneman</name></author></analytic><series><title level="j" type="main">Applied surface science</title><title level="j" type="abbreviated">Appl. surf. sci.</title><idno type="ISSN">0169-4332</idno><imprint><date when="1993">1993</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Applied surface science</title><title level="j" type="abbreviated">Appl. surf. sci.</title><idno type="ISSN">0169-4332</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cleavage</term><term>Crack</term><term>Crack propagation</term><term>Gallium Arsenides</term><term>Germanium</term><term>Semiconductor materials</term><term>Silicon</term><term>Surface</term><term>Surface reconstruction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Fissure</term><term>Clivage</term><term>Surface</term><term>Reconstruction surface</term><term>Propagation fissure</term><term>Gallium Arséniure</term><term>Silicium</term><term>Germanium</term><term>Semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The time of crack travel across thin crystalline wafers has been measured for Si, Ge, and GaAs, by monitoring the resistance across the cleavage. Contrary to supposition, the times and velocities vary greatly, by up to two orders of magnitude, for ostensibly similar conditions. In the cases of Si and Ge the cracks can pause and partially heal before final separation. The healing phenomena are only consistent with cleavage surface models that feature surface reconstructions that are reversible on recontact. The models are discussed</div></front></TEI><affiliations><list><country><li>Australie</li></country></list><tree><noCountry><name sortKey="Haneman, D" sort="Haneman, D" uniqKey="Haneman D" first="D." last="Haneman">D. Haneman</name><name sortKey="Mcalpine, N S" sort="Mcalpine, N S" uniqKey="Mcalpine N" first="N. S." last="Mcalpine">N. S. Mcalpine</name></noCountry><country name="Australie"><noRegion><name sortKey="Li, D G" sort="Li, D G" uniqKey="Li D" first="D. G." last="Li">D. G. Li</name></noRegion></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Wicri/Asie/explor/AustralieFrV1/Data/Main/Merge
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00EB92 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Merge/biblio.hfd -nk 00EB92 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= Wicri/Asie
|area= AustralieFrV1
|flux= Main
|étape= Merge
|type= RBID
|clé= Pascal:93-0466226
|texte= Progression of cleavage in Si, Ge, and GaAs
}}
| This area was generated with Dilib version V0.6.33. |  |