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Electrical characterization of CIGSe solar cells metastability with Zn(S,O,OH)-ZnMgO interface buffer layers

Identifieur interne : 007F19 ( Main/Merge ); précédent : 007F18; suivant : 007F20

Electrical characterization of CIGSe solar cells metastability with Zn(S,O,OH)-ZnMgO interface buffer layers

Auteurs : J. Serhan [France] ; Z. Djebbour [France] ; A. Darga [France] ; D. Mencaraglia [France] ; N. Naghavi [France] ; G. Renou [France] ; D. Lincot [France] ; J.-F. Guillemeoles [France]

Source :

Solar energy materials and solar cells [ 0927-0248 ] ; 2010.

RBID : Pascal:10-0513476

Descripteurs français

Pascal (Inist)
- Cellule solaire, Etat métastable, Couche tampon, Système photovoltaïque, Evaluation performance, Eclairement, Recuit thermique, Densité défaut, Courant photoélectrique, Caractéristique courant tension, Hydroxyde de zinc, Couche interfaciale, Oxyde de zinc, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Sulfure de zinc, Zn(S,O,OH), Cu(In,Ga)Se2.

English descriptors

KwdEn :
- Buffer layer, Copper selenides, Defect density, Gallium selenides, Illumination, Indium selenides, Interfacial layer, Metastable state, Performance evaluation, Photoelectric current, Photovoltaic system, Quaternary compound, Solar cell, Thermal annealing, Voltage current curve, Zinc hydroxide, Zinc oxide, Zinc sulfide.

Abstract

We have studied ZnO:Al/ZnMgO/Zn(S,O,OH)/Cu(In,Ga)Se₂ solar cell (SC) metastability appearing during the measurement of its photovoltaic (PV) performances under AM 1.5 conditions, that is an increase with time of the PV parameters values before saturation, after about 20 min. These maximum values are not definitive since the SC returns to its initial state after about several hours. C-V profiling performed before and after the SC illumination exhibits a light soaking assisted charge redistribution within the absorber. This redistribution has been improved by thermal annealing at 200 °C. This improvement is correlated with a decrease in defects density, measured with sub-gap photocurrent.

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Buffer layer</term>
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<term>Gallium selenides</term>
<term>Illumination</term>
<term>Indium selenides</term>
<term>Interfacial layer</term>
<term>Metastable state</term>
<term>Performance evaluation</term>
<term>Photoelectric current</term>
<term>Photovoltaic system</term>
<term>Quaternary compound</term>
<term>Solar cell</term>
<term>Thermal annealing</term>
<term>Voltage current curve</term>
<term>Zinc hydroxide</term>
<term>Zinc oxide</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term>
<term>Etat métastable</term>
<term>Couche tampon</term>
<term>Système photovoltaïque</term>
<term>Evaluation performance</term>
<term>Eclairement</term>
<term>Recuit thermique</term>
<term>Densité défaut</term>
<term>Courant photoélectrique</term>
<term>Caractéristique courant tension</term>
<term>Hydroxyde de zinc</term>
<term>Couche interfaciale</term>
<term>Oxyde de zinc</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Séléniure d'indium</term>
<term>Composé quaternaire</term>
<term>Sulfure de zinc</term>
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<front><div type="abstract" xml:lang="en">We have studied ZnO:Al/ZnMgO/Zn(S,O,OH)/Cu(In,Ga)Se<sub>2</sub>
 solar cell (SC) metastability appearing during the measurement of its photovoltaic (PV) performances under AM 1.5 conditions, that is an increase with time of the PV parameters values before saturation, after about 20 min. These maximum values are not definitive since the SC returns to its initial state after about several hours. C-V profiling performed before and after the SC illumination exhibits a light soaking assisted charge redistribution within the absorber. This redistribution has been improved by thermal annealing at 200 °C. This improvement is correlated with a decrease in defects density, measured with sub-gap photocurrent.</div>
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Electrical characterization of CIGSe solar cells metastability with Zn(S,O,OH)-ZnMgO interface buffer layers

Electrical characterization of CIGSe solar cells metastability with Zn(S,O,OH)-ZnMgO interface buffer layers

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