Annealed specimens < Annealing < Annealing algorithm

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List of bibliographic references indexed by Annealing

Number of relevant bibliographic references: 53.
[20-40] [0 - 20][0 - 50][40-52][40-60]

Ident.	Authors (with country if any)	Title
009D02 (2006)	A. Arbouet [France] ; M. Carrada [France] ; F. Demangeot [France] ; V. Paillard [France] ; G. Benassayag [France] ; C. Bonafos [France] ; A. Claverie [France] ; S. Schamm [France] ; C. Dumas [France] ; J. Grisolia [France] ; M. A. F. Van Den Boogaart [Suisse] ; J. Brugger [Suisse] ; L. Doeswijk [Suisse]	Photoluminescence characterization of few-nanocrystals electronic devices
009D28 (2006)	N. Daldosso [Italie] ; M. Melchiorri [Italie] ; L. Pavesi [Italie] ; G. Pucker [Italie] ; F. Gourbilleau [France] ; S. Chausserie [France] ; Ali Belarouci [France] ; X. Portier [France] ; C. Dufour [France]	Optical losses and absorption cross-section of silicon nanocrystals
009E45 (2006)	R. Singh [Allemagne] ; I. Radu [Allemagne] ; R. Scholz [Allemagne] ; C. Himcinschi [Allemagne] ; U. Gösele [Allemagne] ; S. H. Christiansen [Allemagne]	Investigation of helium implantation induced blistering in InP
009E53 (2006)	A. Meldrum [Canada] ; A. Hryciw [Canada] ; A. N. Macdonald [Canada] ; C. Blois [Canada] ; T. Clement [Canada] ; R. Decorby [Canada] ; J. Wang [Hong Kong] ; QUAN LI [Hong Kong]	Interaction between rare-earth ions and amorphous silicon nanoclusters produced at low processing temperatures
009E60 (2006)	G. Wora Adeola [France] ; H. Rinnert [France] ; P. Miska [France] ; M. Vergnat [France]	Influence of the SiO thickness on the photoluminescence properties of Er-doped SiO/SiO2 multilayers
009F56 (2006)	S. Dabboussi [Tunisie] ; H. Elhouichet [Tunisie] ; H. Ajlani [Tunisie] ; A. Moadhen [Tunisie] ; M. Oueslati [Tunisie] ; J. A. Roger [France]	Excitation process and photoluminescence properties of Tb3+and Eu3+ ions in SnO2 and in SnO2 : Porous silicon hosts
00A016 (2006)	Anna Muscara [Italie] ; Maria Eloisa Castagna [Italie] ; Salvatore Leonardi [Italie] ; Salvatore Coffa [Italie] ; Liliana Caristia [Italie] ; Simona Lorenti [Italie]	Design and electro-optical characterization of Si-based resonant cavity light emitting devices at 850nm
00A054 (2006)	O. Jambois [Espagne] ; A. Vila [Espagne] ; P. Pellegrino [Espagne] ; J. Carreras [Espagne] ; A. Pbrez-Rodriguez [Espagne] ; B. Garrido [Espagne] ; C. Bonafos [France] ; G. Benassayag [France]	Charge transport along luminescent oxide layers containing Si and SiC nanoparticles
00A575 (2005)	J. S. Williams [Australie] ; S. O. Kucheyev [Australie] ; H. H. Tan [Australie] ; J. Wong-Leung [Australie] ; C. Jagadish [Australie]	Ion irradiation-induced disordering of semiconductors: defect structures and applications
00A964 (2004)	Jharna Mandal [Royaume-Uni] ; Tong Sun [Royaume-Uni] ; Kenneth T V. Grattan [Royaume-Uni] ; Andreas T. Augousti [Royaume-Uni] ; Scott A. Wade [Australie] ; Stephen F. Collins [Australie] ; Gregory W. Baxter [Australie] ; Bernard Dussardier [France] ; Grard Monnom [France]	A wide temperature tunable fibre laser using a chirped grating and a type IIA fibre Bragg grating
00B054 (2003)	Lars Oberbeck [Australie] ; Toby Hallam [Australie] ; Neil J. Curson [Australie] ; Michelle Y. Simmons [Australie] ; Robert G. Clark [Australie]	STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computer
00B673 (2002)	S. Kaciulis [Italie] ; L. Pandolfi [Italie] ; S. Viticoli [Italie] ; G. Sberveglieri [Italie] ; E. Zampiceni [Italie] ; W. Wlodarski [Australie] ; K. Galatsis [Australie] ; Y. X. Li [Australie]	Investigation of thin films of mixed oxides for gas-sensing applications
00B911 (2001)	J. S Williams [Australie] ; M. C Ridgway [Australie] ; M. J Conway [Australie] ; J. Wong-Leung [Australie] ; X. F Zhu [Australie] ; M. Petravic [Australie] ; F. Fortuna [France] ; M.-O Ruault [France] ; H. Bernas [France] ; A. Kinomura [Japon] ; Y. Nakano [Japon] ; Y. Hayashi [Japon]	Interaction of defects and metals with nanocavities in silicon
00B913 (2001)	M. C Ridgway [Australie] ; C. J Glover [Australie] ; I. D Desnica-Frankovic [Croatie] ; K. Furic [Croatie] ; K. M Yu [États-Unis] ; G. J Foran [Australie] ; C. Clerc [France] ; J. L Hansen [Danemark] ; A. Nylandsted Larsen [Danemark]	Implantation-induced disorder in amorphous Ge: Production and relaxation
00BA06 (2001)	K. Kowalski [France, Pologne] ; M. Ijjaali [France] ; T. Bak [Australie] ; B. Dupre [France] ; J. Nowotny [Australie] ; M. Rekas [Australie] ; C. C. Sorrell [Australie]	Kinetics of Nb incorporation into barium titanate
00BA30 (2001)	K. Kowalski [France] ; M. Ijjaali [France] ; T. Bak [Australie] ; B. Dupre [France] ; J. Nowotny [Australie] ; M. Rekas [Australie] ; C. C. Sorrell [Australie]	Electrical properties of Nb-doped BaTiO3
00BA32 (2001)	K. Kowalski [France, Pologne] ; M. Ijjaali [France] ; T. Bak [Australie] ; B. Dupre [France] ; J. Nowotny [Australie] ; M. Rekas [Australie] ; C. C. Sorrell [Australie]	Effect of oxygen activity on Nb solubility in BaTiO3
00BB66 (2001)	X. T. Tang [République populaire de Chine] ; Y. Zhao [Australie] ; Y. Z. Wang [République populaire de Chine] ; S. H. Han [République populaire de Chine] ; H. Zhang [République populaire de Chine]	Structure of Bi2Sr2CaCu2Oy single crystals in different atmosphere
00BB74 (2001)	Y. Liu [Australie] ; D. Favier [France]	Stability of ageing-induced multiple-stage transformation behaviour in a Ti-50.15%Ni alloy
00BF19 (2000)		X-ray induced absorption of high-purity sapphire and investigation of the origin of the residual absorption at 1064 nm
00C055 (2000)	F. Benabid [Australie] ; M. Notcutt [Australie] ; V. Loriette [France] ; L. Ju [Australie] ; D. G. Blair [Australie]	X-ray induced absorption of high-purity sapphire and investigation of the origin of the residual absorption at 1064 nm

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