Plasma immersion ion implantation of poly(tetrafluoroethylene)
Identifieur interne : 00AB44 ( Main/Exploration ); précédent : 00AB43; suivant : 00AB45Plasma immersion ion implantation of poly(tetrafluoroethylene)
Auteurs : T. L. Schiller [Australie] ; D. Sheeja [Singapour] ; D. R. Mckenzie [Australie] ; D. G. Mcculloch [Australie] ; D. S. P. Lau [Singapour] ; S. Burn [Australie] ; B. K. Tay [Singapour]Source :
- Surface & coatings technology [ 0257-8972 ] ; 2004.
Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Plasma immersion ion implantation (PIII) has been used with a filtered cathodic arc to implant copper and carbon ions into poly(tetrafluoroethylene) (PTFE). The PTFE substrates for the copper implantation were placed perpendicular to the plasma beam, whilst those for carbon implantation were oriented parallel to the drift velocity of the beam to minimise the deposition of low energy ions. Electrodes in the form of a backing plate and a mask with holes were used to apply the pulsed bias from the PIII supply. X-ray photoelectron spectroscopy has shown that there is a structural change in the PTFE induced by both the copper and carbon implantation. Raman spectroscopy of the carbon implanted samples showed the presence of an amorphous carbon peak, which remained even after cleaning the surface to remove loosely bound carbon. This shows that there is both implantation and deposition of the carbon occurring. In the case of copper, this method resulted in well-adhered films. The implanted PTFE has been examined for changes in wear resistance. Both copper and carbon modified surfaces showed improvements in wear resistance.
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Box 2476V</s1><s2>Melbourne 3001</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Australie</country><placeName><settlement type="city">Melbourne</settlement><region type="état">Victoria (État)</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>CSIRO, Manufacturing and Infrastructure Technology</s1><s2>Highett, Vic. 3019</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Australie</country><wicri:noRegion>Highett, Vic. 3019</wicri:noRegion></affiliation></author><author><name sortKey="Sheeja, D" sort="Sheeja, D" uniqKey="Sheeja D" first="D." last="Sheeja">D. 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Mcculloch</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, RMIT University, G.P.O. Box 2476V</s1><s2>Melbourne 3001</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Australie</country><placeName><settlement type="city">Melbourne</settlement><region type="état">Victoria (État)</region></placeName></affiliation></author><author><name sortKey="Lau, D S P" sort="Lau, D S P" uniqKey="Lau D" first="D. S. P." last="Lau">D. S. P. Lau</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Nanyang Technological University</s1><s2>Singapore</s2><s3>SGP</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Nanyang Technological University</wicri:noRegion></affiliation></author><author><name sortKey="Burn, S" sort="Burn, S" uniqKey="Burn S" first="S." last="Burn">S. 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L." last="Schiller">T. L. Schiller</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, RMIT University, G.P.O. Box 2476V</s1><s2>Melbourne 3001</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Australie</country><placeName><settlement type="city">Melbourne</settlement><region type="état">Victoria (État)</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>CSIRO, Manufacturing and Infrastructure Technology</s1><s2>Highett, Vic. 3019</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Australie</country><wicri:noRegion>Highett, Vic. 3019</wicri:noRegion></affiliation></author><author><name sortKey="Sheeja, D" sort="Sheeja, D" uniqKey="Sheeja D" first="D." last="Sheeja">D. Sheeja</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Nanyang Technological University</s1><s2>Singapore</s2><s3>SGP</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Nanyang Technological University</wicri:noRegion></affiliation></author><author><name sortKey="Mckenzie, D R" sort="Mckenzie, D R" uniqKey="Mckenzie D" first="D. R." last="Mckenzie">D. R. Mckenzie</name><affiliation wicri:level="4"><inist:fA14 i1="04"><s1>School of Physics (A28), University of Sydney</s1><s2>Sydney, NSW 2006</s2><s3>AUS</s3><sZ>3 aut.</sZ></inist:fA14><country>Australie</country><placeName><settlement type="city">Sydney</settlement><region type="état">Nouvelle-Galles du Sud</region></placeName><orgName type="university">Université de Sydney</orgName></affiliation></author><author><name sortKey="Mcculloch, D G" sort="Mcculloch, D G" uniqKey="Mcculloch D" first="D. G." last="Mcculloch">D. G. Mcculloch</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, RMIT University, G.P.O. Box 2476V</s1><s2>Melbourne 3001</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Australie</country><placeName><settlement type="city">Melbourne</settlement><region type="état">Victoria (État)</region></placeName></affiliation></author><author><name sortKey="Lau, D S P" sort="Lau, D S P" uniqKey="Lau D" first="D. S. P." last="Lau">D. S. P. Lau</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Nanyang Technological University</s1><s2>Singapore</s2><s3>SGP</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Nanyang Technological University</wicri:noRegion></affiliation></author><author><name sortKey="Burn, S" sort="Burn, S" uniqKey="Burn S" first="S." last="Burn">S. Burn</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>CSIRO, Manufacturing and Infrastructure Technology</s1><s2>Highett, Vic. 3019</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Australie</country><wicri:noRegion>Highett, Vic. 3019</wicri:noRegion></affiliation></author><author><name sortKey="Tay, B K" sort="Tay, B K" uniqKey="Tay B" first="B. K." last="Tay">B. K. Tay</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Nanyang Technological University</s1><s2>Singapore</s2><s3>SGP</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Nanyang Technological University</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">Surface & coatings technology</title><title level="j" type="abbreviated">Surf. coat. technol.</title><idno type="ISSN">0257-8972</idno><imprint><date when="2004">2004</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Surface & coatings technology</title><title level="j" type="abbreviated">Surf. coat. technol.</title><idno type="ISSN">0257-8972</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Coatings</term><term>Surface treatment</term><term>Thin film</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Traitement surface</term><term>Revêtement</term><term>Couche mince</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Plasma immersion ion implantation (PIII) has been used with a filtered cathodic arc to implant copper and carbon ions into poly(tetrafluoroethylene) (PTFE). The PTFE substrates for the copper implantation were placed perpendicular to the plasma beam, whilst those for carbon implantation were oriented parallel to the drift velocity of the beam to minimise the deposition of low energy ions. Electrodes in the form of a backing plate and a mask with holes were used to apply the pulsed bias from the PIII supply. X-ray photoelectron spectroscopy has shown that there is a structural change in the PTFE induced by both the copper and carbon implantation. Raman spectroscopy of the carbon implanted samples showed the presence of an amorphous carbon peak, which remained even after cleaning the surface to remove loosely bound carbon. This shows that there is both implantation and deposition of the carbon occurring. In the case of copper, this method resulted in well-adhered films. The implanted PTFE has been examined for changes in wear resistance. Both copper and carbon modified surfaces showed improvements in wear resistance.</div></front></TEI><affiliations><list><country><li>Australie</li><li>Singapour</li></country><region><li>Nouvelle-Galles du Sud</li><li>Victoria (État)</li></region><settlement><li>Melbourne</li><li>Sydney</li></settlement><orgName><li>Université de Sydney</li></orgName></list><tree><country name="Australie"><region name="Victoria (État)"><name sortKey="Schiller, T L" sort="Schiller, T L" uniqKey="Schiller T" first="T. L." last="Schiller">T. L. Schiller</name></region><name sortKey="Burn, S" sort="Burn, S" uniqKey="Burn S" first="S." last="Burn">S. Burn</name><name sortKey="Mcculloch, D G" sort="Mcculloch, D G" uniqKey="Mcculloch D" first="D. G." last="Mcculloch">D. G. Mcculloch</name><name sortKey="Mckenzie, D R" sort="Mckenzie, D R" uniqKey="Mckenzie D" first="D. R." last="Mckenzie">D. R. Mckenzie</name><name sortKey="Schiller, T L" sort="Schiller, T L" uniqKey="Schiller T" first="T. L." last="Schiller">T. L. Schiller</name></country><country name="Singapour"><noRegion><name sortKey="Sheeja, D" sort="Sheeja, D" uniqKey="Sheeja D" first="D." last="Sheeja">D. Sheeja</name></noRegion><name sortKey="Lau, D S P" sort="Lau, D S P" uniqKey="Lau D" first="D. S. P." last="Lau">D. S. P. Lau</name><name sortKey="Tay, B K" sort="Tay, B K" uniqKey="Tay B" first="B. K." last="Tay">B. K. Tay</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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