AustralieFrV1, Main, Exploration, bibRecord, 007982

Control of III-V nanowire crystal structure by growth parameter tuning

Identifieur interne : 007982 ( Main/Exploration ); précédent : 007981; suivant : 007983

Control of III-V nanowire crystal structure by growth parameter tuning

Auteurs : Kimberly A. Dick [Suède] ; Philippe Caroff [Suède, France] ; Jessica Bolinsson [Suède] ; Maria E. Messing [Suède] ; Jonas Johansson [Suède] ; Knut Deppert [Suède] ; L. Reine Wallenberg [Suède] ; Lars Samuelson [Suède]

Source :

Semiconductor science and technology [ 0268-1242 ] ; 2010.

RBID : Pascal:10-0139092

Descripteurs français

Pascal (Inist)
- Croissance cristalline, Structure cristalline, Paramètre ordre, Bande interdite, Macle, Défaut empilement, Concentration impureté, Facettage, Réseau cubique, Structure blende, Réseau hexagonal, Structure wurtzite, Nanofil, Or, Semiconducteur III-V, GaAs, InAs, GaP, InP, GaSb, InSb, Croissance assistée par germe.
Wicri :
- topic : Or.

English descriptors

KwdEn :
- Blende structure, Crystal growth, Crystal structure, Crystal twin, Cubic lattices, Energy gap, Faceting, Gold, Hexagonal lattices, III-V semiconductors, Impurity density, Nanowires, Order parameters, Stacking faults, Top seeding growth, Wurtzite structure.

Abstract

In this work we investigate the variation of the crystal structure of gold-seeded III-V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III-V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All six of these materials exhibit a cubic zinc blende structure in bulk, but twin planes and stacking faults, as well as a hexagonal wurtzite structure, are commonly observed in nanowires. Parameters which may affect the crystal structure include growth temperature and pressure, precursor molar fraction and V/III ratio, nanowire diameter and surface density, and impurity atoms. We will focus on temperature, precursor molar fraction and V/III ratio. Our observations are compared to previous reports in the literature of the III-V nanowire crystal structure, and interpreted in terms of existing models. We propose that changes in the crystal structure with growth parameters are directly related to changes in the stable side facets.

Affiliations:

France, Suède

Links toward previous steps (curation, corpus...)

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Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Blende structure</term>
<term>Crystal growth</term>
<term>Crystal structure</term>
<term>Crystal twin</term>
<term>Cubic lattices</term>
<term>Energy gap</term>
<term>Faceting</term>
<term>Gold</term>
<term>Hexagonal lattices</term>
<term>III-V semiconductors</term>
<term>Impurity density</term>
<term>Nanowires</term>
<term>Order parameters</term>
<term>Stacking faults</term>
<term>Top seeding growth</term>
<term>Wurtzite structure</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Croissance cristalline</term>
<term>Structure cristalline</term>
<term>Paramètre ordre</term>
<term>Bande interdite</term>
<term>Macle</term>
<term>Défaut empilement</term>
<term>Concentration impureté</term>
<term>Facettage</term>
<term>Réseau cubique</term>
<term>Structure blende</term>
<term>Réseau hexagonal</term>
<term>Structure wurtzite</term>
<term>Nanofil</term>
<term>Or</term>
<term>Semiconducteur III-V</term>
<term>GaAs</term>
<term>InAs</term>
<term>GaP</term>
<term>InP</term>
<term>GaSb</term>
<term>InSb</term>
<term>Croissance assistée par germe</term>
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<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Or</term>
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<front><div type="abstract" xml:lang="en">In this work we investigate the variation of the crystal structure of gold-seeded III-V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III-V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All six of these materials exhibit a cubic zinc blende structure in bulk, but twin planes and stacking faults, as well as a hexagonal wurtzite structure, are commonly observed in nanowires. Parameters which may affect the crystal structure include growth temperature and pressure, precursor molar fraction and V/III ratio, nanowire diameter and surface density, and impurity atoms. We will focus on temperature, precursor molar fraction and V/III ratio. Our observations are compared to previous reports in the literature of the III-V nanowire crystal structure, and interpreted in terms of existing models. We propose that changes in the crystal structure with growth parameters are directly related to changes in the stable side facets.</div>
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<li>Suède</li>
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Control of III-V nanowire crystal structure by growth parameter tuning

Control of III-V nanowire crystal structure by growth parameter tuning

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Abstract

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