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Electronic processes in semiconductor materials studied by nanosecond time-resolved microwave conductivity—III. Al2O3, MgO and TiO2 powders

Identifieur interne : 001E46 ( Istex/Curation ); précédent : 001E45; suivant : 001E47

Electronic processes in semiconductor materials studied by nanosecond time-resolved microwave conductivity—III. Al2O3, MgO and TiO2 powders

Auteurs : John M. Warman [Pays-Bas] ; De Haas Matthijs P. [Pays-Bas] ; Pichat Pierre [France] ; Koster Theodorus P. M. [Pays-Bas] ; Van Der Zouwen-Assink Etty A. [Pays-Bas] ; Mackor Adri [Pays-Bas] ; Cooper Ronald [Australie]

Source :

International Journal of Radiation Applications & Instrumentation. Part C, Radiation Physics & Chemistry [ 1359-0197 ] ; 1991.

RBID : ISTEX:A0DE1798AD1BD7640DC87731A7E070CF4363D8D0

Descripteurs français

Wicri :
- topic : Transporteur, Analyse quantitative.

English descriptors

Abstract

Abstract: Electronic charge carriers have been produced in commercial and special laboratory samples of Al2O3, MgO and TiO2 powders by band-gap excitation using nanosecond pulses of high-energy (3 MeV electron) radiation. Changes in conductivity have been monitored by time-resolved microwave conductivity (TRMC) in the frequency range 26.5–38 GHz. The effective mobilities of the carriers formed, ∑μ = [μ(e)+μ(h)], have been estimated from the magnitude of the end-of-pulse conductivity. The value of 3×10−8 m2 Vs found for Al2O3 was close to the limit of measurement. For MgO the mobility of the primary carrier was found to be considerably larger than expected for a small polaron, i.e. 20 × 10-4m2/Vs. Localisation occurred very rapidly (subnanosecond) in the virgin, unirradiated material. Continued irradiation to an accumulated dose a few kiloGrays resulted in an increase of the carrier lifetime into the nanosecond regime due to radiation-induced trap deactivation. Mobility values for TiO2 samples varied within the polaron range from a high of 5 × 10-4m2/Vs to a low of 0.04 × 10-4m2/Vs. A marked decrease in the effective mobility with decreasing size for nanometre particles is attributed to subnanosecond equilibrium between a mobile bulk and a localized surface, defect state. The conductivity transient for Degussa P25 was dramatically influenced by surface conditions including deposition of Pt and covering with iso-propanol. Alumina-silica coated pigment particles were insensitive to alcohol. No afterpulse conductivity could be measured for a sample bulk-doped with 0.85 atom percent Cr3+ presumably due to very rapid impurity induced bulk recombination.

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https://api.istex.fr/document/A0DE1798AD1BD7640DC87731A7E070CF4363D8D0/fulltext/pdf

DOI: 10.1016/1359-0197(91)90015-T

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<author><name sortKey="Warman, John M" sort="Warman, John M" uniqKey="Warman J" first="John M." last="Warman">John M. Warman</name>
<affiliation wicri:level="1"><mods:affiliation>Radiation Chemistry Department, IRI, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands</mods:affiliation>
<country xml:lang="fr">Pays-Bas</country>
<wicri:regionArea>Radiation Chemistry Department, IRI, Delft University of Technology, Mekelweg 15, 2629 JB Delft</wicri:regionArea>
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<author><name sortKey="Matthijs P, De Haas" sort="Matthijs P, De Haas" uniqKey="Matthijs P D" first="De Haas" last="Matthijs P.">De Haas Matthijs P.</name>
<affiliation wicri:level="1"><mods:affiliation>Radiation Chemistry Department, IRI, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands</mods:affiliation>
<country xml:lang="fr">Pays-Bas</country>
<wicri:regionArea>Radiation Chemistry Department, IRI, Delft University of Technology, Mekelweg 15, 2629 JB Delft</wicri:regionArea>
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<author><name sortKey="Pierre, Pichat" sort="Pierre, Pichat" uniqKey="Pierre P" first="Pichat" last="Pierre">Pichat Pierre</name>
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<country xml:lang="fr">France</country>
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<author><name sortKey="Theodorus P M, Koster" sort="Theodorus P M, Koster" uniqKey="Theodorus P M K" first="Koster" last="Theodorus P. M.">Koster Theodorus P. M.</name>
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<author><name sortKey="Etty A, Van Der Zouwen Assink" sort="Etty A, Van Der Zouwen Assink" uniqKey="Etty A V" first="Van Der Zouwen-Assink" last="Etty A.">Van Der Zouwen-Assink Etty A.</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anatase</term>
<term>Anatase samples</term>
<term>Approx</term>
<term>Average energy</term>
<term>Carrier</term>
<term>Certain cases</term>
<term>Charge carrier</term>
<term>Charge carrier mobilities</term>
<term>Charge carrier mobility</term>
<term>Charge carriers</term>
<term>Chem</term>
<term>Complete lack</term>
<term>Conduction band</term>
<term>Conductivity</term>
<term>Conductivity signal</term>
<term>Conductivity transients</term>
<term>Crystallite</term>
<term>Cylindrical cavity</term>
<term>Dark conductivity</term>
<term>Decay kinetics</term>
<term>Defect site</term>
<term>Definite difference</term>
<term>Degussa</term>
<term>Different samples</term>
<term>Doped samples</term>
<term>Effective mobility</term>
<term>Electronic charge carriers</term>
<term>Electronic processes</term>
<term>Energy deposition</term>
<term>First pulse</term>
<term>Flame reactor</term>
<term>Free electrons</term>
<term>Haas</term>
<term>Hall mobilities</term>
<term>Herrmann</term>
<term>Herrmann disdier</term>
<term>Hole mobilities</term>
<term>Important role</term>
<term>Individual crystallites</term>
<term>Initial concentration</term>
<term>Initial lifetime</term>
<term>Lattice</term>
<term>Literature values</term>
<term>Localisation</term>
<term>Localised</term>
<term>Macherey nagel</term>
<term>Major impurities</term>
<term>Maximum value</term>
<term>Microwave</term>
<term>Microwave conductivity</term>
<term>Microwave conductivity signals</term>
<term>Mobile carrier</term>
<term>Mobile charge carrier</term>
<term>Mobility</term>
<term>Mobility values</term>
<term>Nanosecond</term>
<term>Pair formation energy</term>
<term>Particle size</term>
<term>Particle surface</term>
<term>Particular sample</term>
<term>Perspex</term>
<term>Perspex block</term>
<term>Perspex block arrangement</term>
<term>Photocatalytic oxidation</term>
<term>Phys</term>
<term>Pichat</term>
<term>Pigment particles</term>
<term>Polaron</term>
<term>Powder form</term>
<term>Powder sample</term>
<term>Powder samples</term>
<term>Preliminary experiments</term>
<term>Present case</term>
<term>Present compounds</term>
<term>Present technique</term>
<term>Present work</term>
<term>Pulse shape</term>
<term>Pulse width</term>
<term>Quantitative analysis</term>
<term>Redox chemistry</term>
<term>Relative electron density</term>
<term>Rutile</term>
<term>Rutile regions</term>
<term>Sample cavity</term>
<term>Sample geometry</term>
<term>Semiconductor</term>
<term>Semiconductor materials</term>
<term>Short lifetime</term>
<term>Small polaron</term>
<term>Subnanosecond timescale</term>
<term>Surface deposit</term>
<term>Tio2</term>
<term>Tio2 particles</term>
<term>Tioxide</term>
<term>Transient</term>
<term>Transient conductivity</term>
<term>Unit dose</term>
<term>Vacuum oven</term>
<term>Warman</term>
<term>Wave pattern</term>
<term>Waveguide</term>
</keywords>
<keywords scheme="Teeft" xml:lang="en"><term>Anatase</term>
<term>Anatase samples</term>
<term>Approx</term>
<term>Average energy</term>
<term>Carrier</term>
<term>Certain cases</term>
<term>Charge carrier</term>
<term>Charge carrier mobilities</term>
<term>Charge carrier mobility</term>
<term>Charge carriers</term>
<term>Chem</term>
<term>Complete lack</term>
<term>Conduction band</term>
<term>Conductivity</term>
<term>Conductivity signal</term>
<term>Conductivity transients</term>
<term>Crystallite</term>
<term>Cylindrical cavity</term>
<term>Dark conductivity</term>
<term>Decay kinetics</term>
<term>Defect site</term>
<term>Definite difference</term>
<term>Degussa</term>
<term>Different samples</term>
<term>Doped samples</term>
<term>Effective mobility</term>
<term>Electronic charge carriers</term>
<term>Electronic processes</term>
<term>Energy deposition</term>
<term>First pulse</term>
<term>Flame reactor</term>
<term>Free electrons</term>
<term>Haas</term>
<term>Hall mobilities</term>
<term>Herrmann</term>
<term>Herrmann disdier</term>
<term>Hole mobilities</term>
<term>Important role</term>
<term>Individual crystallites</term>
<term>Initial concentration</term>
<term>Initial lifetime</term>
<term>Lattice</term>
<term>Literature values</term>
<term>Localisation</term>
<term>Localised</term>
<term>Macherey nagel</term>
<term>Major impurities</term>
<term>Maximum value</term>
<term>Microwave</term>
<term>Microwave conductivity</term>
<term>Microwave conductivity signals</term>
<term>Mobile carrier</term>
<term>Mobile charge carrier</term>
<term>Mobility</term>
<term>Mobility values</term>
<term>Nanosecond</term>
<term>Pair formation energy</term>
<term>Particle size</term>
<term>Particle surface</term>
<term>Particular sample</term>
<term>Perspex</term>
<term>Perspex block</term>
<term>Perspex block arrangement</term>
<term>Photocatalytic oxidation</term>
<term>Phys</term>
<term>Pichat</term>
<term>Pigment particles</term>
<term>Polaron</term>
<term>Powder form</term>
<term>Powder sample</term>
<term>Powder samples</term>
<term>Preliminary experiments</term>
<term>Present case</term>
<term>Present compounds</term>
<term>Present technique</term>
<term>Present work</term>
<term>Pulse shape</term>
<term>Pulse width</term>
<term>Quantitative analysis</term>
<term>Redox chemistry</term>
<term>Relative electron density</term>
<term>Rutile</term>
<term>Rutile regions</term>
<term>Sample cavity</term>
<term>Sample geometry</term>
<term>Semiconductor</term>
<term>Semiconductor materials</term>
<term>Short lifetime</term>
<term>Small polaron</term>
<term>Subnanosecond timescale</term>
<term>Surface deposit</term>
<term>Tio2</term>
<term>Tio2 particles</term>
<term>Tioxide</term>
<term>Transient</term>
<term>Transient conductivity</term>
<term>Unit dose</term>
<term>Vacuum oven</term>
<term>Warman</term>
<term>Wave pattern</term>
<term>Waveguide</term>
</keywords>
<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Transporteur</term>
<term>Analyse quantitative</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Abstract: Electronic charge carriers have been produced in commercial and special laboratory samples of Al2O3, MgO and TiO2 powders by band-gap excitation using nanosecond pulses of high-energy (3 MeV electron) radiation. Changes in conductivity have been monitored by time-resolved microwave conductivity (TRMC) in the frequency range 26.5–38 GHz. The effective mobilities of the carriers formed, ∑μ = [μ(e)+μ(h)], have been estimated from the magnitude of the end-of-pulse conductivity. The value of 3×10−8 m2 Vs found for Al2O3 was close to the limit of measurement. For MgO the mobility of the primary carrier was found to be considerably larger than expected for a small polaron, i.e. 20 × 10-4m2/Vs. Localisation occurred very rapidly (subnanosecond) in the virgin, unirradiated material. Continued irradiation to an accumulated dose a few kiloGrays resulted in an increase of the carrier lifetime into the nanosecond regime due to radiation-induced trap deactivation. Mobility values for TiO2 samples varied within the polaron range from a high of 5 × 10-4m2/Vs to a low of 0.04 × 10-4m2/Vs. A marked decrease in the effective mobility with decreasing size for nanometre particles is attributed to subnanosecond equilibrium between a mobile bulk and a localized surface, defect state. The conductivity transient for Degussa P25 was dramatically influenced by surface conditions including deposition of Pt and covering with iso-propanol. Alumina-silica coated pigment particles were insensitive to alcohol. No afterpulse conductivity could be measured for a sample bulk-doped with 0.85 atom percent Cr3+ presumably due to very rapid impurity induced bulk recombination.</div>
</front>
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Electronic processes in semiconductor materials studied by nanosecond time-resolved microwave conductivity—III. Al2O3, MgO and TiO2 powders

Electronic processes in semiconductor materials studied by nanosecond time-resolved microwave conductivity—III. Al2O3, MgO and TiO2 powders

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Abstract

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