Raman spectroscopy of Si1 − x − y Ge x C y layers obtained by pulsed laser induced epitaxy
Identifieur interne : 002A19 ( Istex/Corpus ); précédent : 002A18; suivant : 002A20Raman spectroscopy of Si1 − x − y Ge x C y layers obtained by pulsed laser induced epitaxy
Auteurs : E. Finkman ; J. Boulmer ; P. Boucaud ; C. Guedj ; D. Bouchier ; K. Nugent ; S. PrawerSource :
- Applied Surface Science [ 0169-4332 ] ; 1996.
English descriptors
- KwdEn :
- Academic press, Annealing process, Appl, Carbon incorporation, Concentration profile, Critical thickness, Elastic accommodation, Electronic properties, Epitaxy, Final analysis, Finkman, Fluence, Fluences, High fluences, High speed, Laser, Laser fluence, Laser fluence increases, Laser fluences, Laser shots, Laser treatment, Lattice, Lattice mismatch, Layer, Layer peak, Lett, Mass spectroscopy, Misfit dislocations, Molten depth, Molten layer, Phys, Plie, Plie process, Possible saturation, Pseudomorphic films, Raman, Raman spectra, Raman spectroscopy, Relative intensities, Rutherford backscattering, Rutherford backscattering spectroscopy, Sige, Sige layer, Sigec, Sigec films, Substitutional, Substitutional carbon, Substitutional sites, Substrate peak, Surface science.
- Teeft :
- Academic press, Annealing process, Appl, Carbon incorporation, Concentration profile, Critical thickness, Elastic accommodation, Electronic properties, Epitaxy, Final analysis, Finkman, Fluence, Fluences, High fluences, High speed, Laser, Laser fluence, Laser fluence increases, Laser fluences, Laser shots, Laser treatment, Lattice, Lattice mismatch, Layer, Layer peak, Lett, Mass spectroscopy, Misfit dislocations, Molten depth, Molten layer, Phys, Plie, Plie process, Possible saturation, Pseudomorphic films, Raman, Raman spectra, Raman spectroscopy, Relative intensities, Rutherford backscattering, Rutherford backscattering spectroscopy, Sige, Sige layer, Sigec, Sigec films, Substitutional, Substitutional carbon, Substitutional sites, Substrate peak, Surface science.
Abstract
Abstract: In this paper we present an investigation of pulsed laser induced epitaxy (PLIE) to obtain epilayers of Si1 − x − yGexCy on top of Si substrate by annealing non-crystalline SiGeC layers. Si1 − x − yGexCy Si heterostructures were formed from C+ implanted pseudomorphic Si0.84Ge0.16 films and from hydrogenated amorphous SiGeC films deposited on Si(100). All samples were annealed in vacuum by XeCl excimer laser pulses. An analysis of the annealing process is presented, based on a detailed Raman study of the laser treated samples. The interpretation is corroborated by additional techniques: Rutherford backscattering spectroscopy, X-ray diffraction, and secondary ion mass spectroscopy (SIMS). Raman scattering is shown to be a relatively simple, non-destructive technique, to analyze the growth process, i.e. parameters such as crystallization, SiGeC layer depth, Ge content, and C incorporation in substitutional sites.
Url:
DOI: 10.1016/S0169-4332(96)00415-1
Links to Exploration step
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<front><div type="abstract" xml:lang="en">Abstract: In this paper we present an investigation of pulsed laser induced epitaxy (PLIE) to obtain epilayers of Si1 − x − yGexCy on top of Si substrate by annealing non-crystalline SiGeC layers. Si1 − x − yGexCy Si heterostructures were formed from C+ implanted pseudomorphic Si0.84Ge0.16 films and from hydrogenated amorphous SiGeC films deposited on Si(100). All samples were annealed in vacuum by XeCl excimer laser pulses. An analysis of the annealing process is presented, based on a detailed Raman study of the laser treated samples. The interpretation is corroborated by additional techniques: Rutherford backscattering spectroscopy, X-ray diffraction, and secondary ion mass spectroscopy (SIMS). Raman scattering is shown to be a relatively simple, non-destructive technique, to analyze the growth process, i.e. parameters such as crystallization, SiGeC layer depth, Ge content, and C incorporation in substitutional sites.</div>
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<head><ce:title>Raman spectroscopy of Si<ce:inf>1 − <ce:italic>x − y</ce:italic>
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Ge<ce:inf><ce:italic>x</ce:italic>
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C<ce:inf><ce:italic>y</ce:italic>
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layers obtained by pulsed laser induced epitaxy</ce:title>
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heterostructures were formed from C<ce:sup>+</ce:sup>
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films and from hydrogenated amorphous SiGeC films deposited on Si(100). All samples were annealed in vacuum by XeCl excimer laser pulses. An analysis of the annealing process is presented, based on a detailed Raman study of the laser treated samples. The interpretation is corroborated by additional techniques: Rutherford backscattering spectroscopy, X-ray diffraction, and secondary ion mass spectroscopy (SIMS). Raman scattering is shown to be a relatively simple, non-destructive technique, to analyze the growth process, i.e. parameters such as crystallization, SiGeC layer depth, Ge content, and C incorporation in substitutional sites.</ce:simple-para>
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<abstract lang="en">Abstract: In this paper we present an investigation of pulsed laser induced epitaxy (PLIE) to obtain epilayers of Si1 − x − yGexCy on top of Si substrate by annealing non-crystalline SiGeC layers. Si1 − x − yGexCy Si heterostructures were formed from C+ implanted pseudomorphic Si0.84Ge0.16 films and from hydrogenated amorphous SiGeC films deposited on Si(100). All samples were annealed in vacuum by XeCl excimer laser pulses. An analysis of the annealing process is presented, based on a detailed Raman study of the laser treated samples. The interpretation is corroborated by additional techniques: Rutherford backscattering spectroscopy, X-ray diffraction, and secondary ion mass spectroscopy (SIMS). Raman scattering is shown to be a relatively simple, non-destructive technique, to analyze the growth process, i.e. parameters such as crystallization, SiGeC layer depth, Ge content, and C incorporation in substitutional sites.</abstract>
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