AustralieFrV1, Istex, Corpus, bibRecord, 002A19

Raman spectroscopy of Si1 − x − y Ge x C y layers obtained by pulsed laser induced epitaxy

Identifieur interne : 002A19 ( Istex/Corpus ); précédent : 002A18; suivant : 002A20

Raman spectroscopy of Si1 − x − y Ge x C y layers obtained by pulsed laser induced epitaxy

Auteurs : E. Finkman ; J. Boulmer ; P. Boucaud ; C. Guedj ; D. Bouchier ; K. Nugent ; S. Prawer

Source :

Applied Surface Science [ 0169-4332 ] ; 1996.

RBID : ISTEX:E18C46A7CA5DEA1A38887A5DC9CA49BE294D4545

English descriptors

Abstract

Abstract: In this paper we present an investigation of pulsed laser induced epitaxy (PLIE) to obtain epilayers of Si1 − x − yGexCy on top of Si substrate by annealing non-crystalline SiGeC layers. Si1 − x − yGexCy Si heterostructures were formed from C+ implanted pseudomorphic Si0.84Ge0.16 films and from hydrogenated amorphous SiGeC films deposited on Si(100). All samples were annealed in vacuum by XeCl excimer laser pulses. An analysis of the annealing process is presented, based on a detailed Raman study of the laser treated samples. The interpretation is corroborated by additional techniques: Rutherford backscattering spectroscopy, X-ray diffraction, and secondary ion mass spectroscopy (SIMS). Raman scattering is shown to be a relatively simple, non-destructive technique, to analyze the growth process, i.e. parameters such as crystallization, SiGeC layer depth, Ge content, and C incorporation in substitutional sites.

Url:

https://api.istex.fr/document/E18C46A7CA5DEA1A38887A5DC9CA49BE294D4545/fulltext/pdf

DOI: 10.1016/S0169-4332(96)00415-1

Links to Exploration step

ISTEX:E18C46A7CA5DEA1A38887A5DC9CA49BE294D4545

Le document en format XML

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<front><div type="abstract" xml:lang="en">Abstract: In this paper we present an investigation of pulsed laser induced epitaxy (PLIE) to obtain epilayers of Si1 − x − yGexCy on top of Si substrate by annealing non-crystalline SiGeC layers. Si1 − x − yGexCy Si heterostructures were formed from C+ implanted pseudomorphic Si0.84Ge0.16 films and from hydrogenated amorphous SiGeC films deposited on Si(100). All samples were annealed in vacuum by XeCl excimer laser pulses. An analysis of the annealing process is presented, based on a detailed Raman study of the laser treated samples. The interpretation is corroborated by additional techniques: Rutherford backscattering spectroscopy, X-ray diffraction, and secondary ion mass spectroscopy (SIMS). Raman scattering is shown to be a relatively simple, non-destructive technique, to analyze the growth process, i.e. parameters such as crystallization, SiGeC layer depth, Ge content, and C incorporation in substitutional sites.</div>
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<head><ce:title>Raman spectroscopy of Si<ce:inf>1 − <ce:italic>x − y</ce:italic>
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Ge<ce:inf><ce:italic>x</ce:italic>
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C<ce:inf><ce:italic>y</ce:italic>
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 layers obtained by pulsed laser induced epitaxy</ce:title>
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<ce:abstract-sec><ce:simple-para>In this paper we present an investigation of pulsed laser induced epitaxy (PLIE) to obtain epilayers of Si<ce:inf>1 − <ce:italic>x − y</ce:italic>
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 heterostructures were formed from C<ce:sup>+</ce:sup>
 implanted pseudomorphic Si<ce:inf>0.84</ce:inf>
Ge<ce:inf>0.16</ce:inf>
 films and from hydrogenated amorphous SiGeC films deposited on Si(100). All samples were annealed in vacuum by XeCl excimer laser pulses. An analysis of the annealing process is presented, based on a detailed Raman study of the laser treated samples. The interpretation is corroborated by additional techniques: Rutherford backscattering spectroscopy, X-ray diffraction, and secondary ion mass spectroscopy (SIMS). Raman scattering is shown to be a relatively simple, non-destructive technique, to analyze the growth process, i.e. parameters such as crystallization, SiGeC layer depth, Ge content, and C incorporation in substitutional sites.</ce:simple-para>
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Raman spectroscopy of Si1 − x − y Ge x C y layers obtained by pulsed laser induced epitaxy

Raman spectroscopy of Si1 − x − y Ge x C y layers obtained by pulsed laser induced epitaxy

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