AustralieFrV1, Istex, Corpus, bibRecord, 002332

Optical properties of InN with stoichoimetry violation and indium clustering

Identifieur interne : 002332 ( Istex/Corpus ); précédent : 002331; suivant : 002333

Optical properties of InN with stoichoimetry violation and indium clustering

Auteurs : T. V. Shubina ; S. V. Ivanov ; V. N. Jmerik ; M. M. Glazov ; A. P. Kalvarskii ; M. G. Tkachman ; A. Vasson ; J. Leymarie ; A. Kavokin ; H. Amano ; I. Akasaki ; K. S. A. Butcher ; Q. Guo ; B. Monemar ; P. S. Kop'Ev

Source :

physica status solidi (a) [ 1862-6300 ] ; 2005-02.

RBID : ISTEX:BD45752D2D817F601861FCEFB6ED346A1E04BD03

English descriptors

KwdEn :
- Absorption edge, Absorption spectra, Additional peak, Binding theory, Carrier concentration, Current material, Diagonal energies, Different groups, Different temperatures, Gmbh, Indium, Kgaa, Lattice cell volume, Lattice parameters, Moss effect, Optical properties, Paper phys, Phys, Principal edge, Schaff, Stoichoimetry violation, Verlag, Verlag gmbh, Weinheim.
Teeft :
- Absorption edge, Absorption spectra, Additional peak, Binding theory, Carrier concentration, Current material, Diagonal energies, Different groups, Different temperatures, Gmbh, Indium, Kgaa, Lattice cell volume, Lattice parameters, Moss effect, Optical properties, Paper phys, Phys, Principal edge, Schaff, Stoichoimetry violation, Verlag, Verlag gmbh, Weinheim.

Abstract

We demonstrate that nonstoichiometry is one of the main reason of strong deviation of the InN optical gap in the 0.7–2 eV range, with N/In < 1 and N/In > 1 corresponding to the lower and higher energies, respectively. The phenomenon is discussed in terms of atomic orbital energies, which are strongly different for indium and nitrogen, therefore both excess atom incorporation and elimination could change the optical gap. We estimate such trends using the approximation of the empirical nearest‐neighbor tight binding theory. It is also demonstrated that resonant absorption in In‐enriched regions is an additional factor lowering an effective absorption edge. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Url:

https://api.istex.fr/document/BD45752D2D817F601861FCEFB6ED346A1E04BD03/fulltext/pdf

DOI: 10.1002/pssa.200460321

Links to Exploration step

ISTEX:BD45752D2D817F601861FCEFB6ED346A1E04BD03

Le document en format XML

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<front><div type="abstract" xml:lang="en">We demonstrate that nonstoichiometry is one of the main reason of strong deviation of the InN optical gap in the 0.7–2 eV range, with N/In < 1 and N/In > 1 corresponding to the lower and higher energies, respectively. The phenomenon is discussed in terms of atomic orbital energies, which are strongly different for indium and nitrogen, therefore both excess atom incorporation and elimination could change the optical gap. We estimate such trends using the approximation of the empirical nearest‐neighbor tight binding theory. It is also demonstrated that resonant absorption in In‐enriched regions is an additional factor lowering an effective absorption edge. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</div>
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<role><roleTerm type="text">author</roleTerm>
</role>
</name>
<name type="personal"><namePart type="given">H.</namePart>
<namePart type="family">Amano</namePart>
<affiliation>Meijo University, 1‐501 Shiogamaguchi, Tempaku‐ku, Nagoya 468‐8502, Japan</affiliation>
<role><roleTerm type="text">author</roleTerm>
</role>
</name>
<name type="personal"><namePart type="given">I.</namePart>
<namePart type="family">Akasaki</namePart>
<affiliation>Meijo University, 1‐501 Shiogamaguchi, Tempaku‐ku, Nagoya 468‐8502, Japan</affiliation>
<role><roleTerm type="text">author</roleTerm>
</role>
</name>
<name type="personal"><namePart type="given">K. S. A.</namePart>
<namePart type="family">Butcher</namePart>
<affiliation>Physics Department, Macquarie University, Sydney NSW 2109, Australia</affiliation>
<role><roleTerm type="text">author</roleTerm>
</role>
</name>
<name type="personal"><namePart type="given">Q.</namePart>
<namePart type="family">Guo</namePart>
<affiliation>Saga University, Saga 840‐8502, Japan</affiliation>
<role><roleTerm type="text">author</roleTerm>
</role>
</name>
<name type="personal"><namePart type="given">B.</namePart>
<namePart type="family">Monemar</namePart>
<affiliation>Linköping University, S581 83 Linköping, Sweden</affiliation>
<role><roleTerm type="text">author</roleTerm>
</role>
</name>
<name type="personal"><namePart type="given">P. S.</namePart>
<namePart type="family">Kop'ev</namePart>
<affiliation>Ioffe Physico‐Technical Institute, Russian Academy of Sciences, St.Petersburg 194021, Russia</affiliation>
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<originInfo><publisher>WILEY‐VCH Verlag</publisher>
<place><placeTerm type="text">Weinheim</placeTerm>
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<extent unit="references">26</extent>
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<abstract lang="en">We demonstrate that nonstoichiometry is one of the main reason of strong deviation of the InN optical gap in the 0.7–2 eV range, with N/In < 1 and N/In > 1 corresponding to the lower and higher energies, respectively. The phenomenon is discussed in terms of atomic orbital energies, which are strongly different for indium and nitrogen, therefore both excess atom incorporation and elimination could change the optical gap. We estimate such trends using the approximation of the empirical nearest‐neighbor tight binding theory. It is also demonstrated that resonant absorption in In‐enriched regions is an additional factor lowering an effective absorption edge. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract>
<subject lang="en"><genre>keywords</genre>
<topic>71.45.Gm</topic>
<topic>71.55.Eq</topic>
<topic>78.66.Fd</topic>
<topic>78.66.Sq</topic>
</subject>
<relatedItem type="host"><titleInfo><title>physica status solidi (a)</title>
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<titleInfo type="abbreviated"><title>phys. stat. sol. (a)</title>
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<subject><genre>article-category</genre>
<topic>Original Paper</topic>
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<identifier type="ISSN">1862-6300</identifier>
<identifier type="eISSN">1862-6319</identifier>
<identifier type="DOI">10.1002/(ISSN)1862-6319</identifier>
<identifier type="PublisherID">PSSA</identifier>
<part><date>2005</date>
<detail type="volume"><caption>vol.</caption>
<number>202</number>
</detail>
<detail type="issue"><caption>no.</caption>
<number>3</number>
</detail>
<extent unit="pages"><start>377</start>
<end>382</end>
<total>6</total>
</extent>
</part>
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<identifier type="istex">BD45752D2D817F601861FCEFB6ED346A1E04BD03</identifier>
<identifier type="ark">ark:/67375/WNG-89W71V3G-5</identifier>
<identifier type="DOI">10.1002/pssa.200460321</identifier>
<identifier type="ArticleID">PSSA200460321</identifier>
<accessCondition type="use and reproduction" contentType="copyright">Copyright © 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</accessCondition>
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<recordOrigin>WILEY‐VCH Verlag</recordOrigin>
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Optical properties of InN with stoichoimetry violation and indium clustering

Optical properties of InN with stoichoimetry violation and indium clustering

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