ChemInform Abstract: Li2CdGeS4, a Diamond‐Like Semiconductor with Strong Second‐Order Optical Nonlinearity in the Infrared and Exceptional Laser Damage Threshold.
Identifieur interne : 002719 ( Istex/Corpus ); précédent : 002718; suivant : 002720ChemInform Abstract: Li2CdGeS4, a Diamond‐Like Semiconductor with Strong Second‐Order Optical Nonlinearity in the Infrared and Exceptional Laser Damage Threshold.
Auteurs : Jacilynn A. Brant ; Daniel J. Clark ; Yong Soo Kim ; Joon I. Jang ; Jian-Han Zhang ; Jennifer A. AitkenSource :
- ChemInform [ 0931-7597 ] ; 2014-08-19.
Abstract
The NLO semiconductor of title is quantitatively obtained by solid state reaction of stoichiometric amounts of Cd, Ge, S, and a slight excess of Li2S (graphite crucible in evacuated silica tube, 750 °C, 144 h).
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DOI: 10.1002/chin.201433006
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Biochem., Duquesne Univ., Pittsburgh, PA 15282, USA</mods:affiliation></affiliation></author></analytic><monogr></monogr><series><title level="j" type="main">ChemInform</title><title level="j" type="alt">CHEMINFORM</title><idno type="ISSN">0931-7597</idno><idno type="eISSN">1522-2667</idno><imprint><biblScope unit="vol">45</biblScope><biblScope unit="issue">33</biblScope><biblScope unit="page" from="no">no</biblScope><biblScope unit="page" to="no">no</biblScope><biblScope unit="page-count">1</biblScope><publisher>WILEY‐VCH Verlag</publisher><pubPlace>Weinheim</pubPlace><date type="published" when="2014-08-19">2014-08-19</date></imprint><idno type="ISSN">0931-7597</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0931-7597</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The NLO semiconductor of title is quantitatively obtained by solid state reaction of stoichiometric amounts of Cd, Ge, S, and a slight excess of Li2S (graphite crucible in evacuated silica tube, 750 °C, 144 h).</div></front></TEI><istex><corpusName>wiley</corpusName><author><json:item><name>Jacilynn A. 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Biochem., Duquesne Univ., Pittsburgh, PA 15282, USA<address><country key="US"></country></address></affiliation></author><author xml:id="author-0001"><persName><forename type="first">Daniel J.</forename><surname>Clark</surname></persName><affiliation>Dep. Chem. Biochem., Duquesne Univ., Pittsburgh, PA 15282, USA<address><country key="US"></country></address></affiliation></author><author xml:id="author-0002"><persName><forename type="first">Yong Soo</forename><surname>Kim</surname></persName><affiliation>Dep. Chem. Biochem., Duquesne Univ., Pittsburgh, PA 15282, USA<address><country key="US"></country></address></affiliation></author><author xml:id="author-0003"><persName><forename type="first">Joon I.</forename><surname>Jang</surname></persName><affiliation>Dep. Chem. Biochem., Duquesne Univ., Pittsburgh, PA 15282, USA<address><country key="US"></country></address></affiliation></author><author xml:id="author-0004"><persName><forename type="first">Jian‐Han</forename><surname>Zhang</surname></persName><affiliation>Dep. Chem. Biochem., Duquesne Univ., Pittsburgh, PA 15282, USA<address><country key="US"></country></address></affiliation></author><author xml:id="author-0005"><persName><forename type="first">Jennifer A.</forename><surname>Aitken</surname></persName><affiliation>Dep. Chem. 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Chem. Biochem., Duquesne Univ., Pittsburgh, PA 15282, USA</unparsedAffiliation></affiliation></affiliationGroup><keywordGroup xml:lang="en" type="author"><keyword xml:id="kwd1">optical properties (excluding spectra) (solids and liquids)</keyword><keyword xml:id="kwd2">lithium, Li</keyword><keyword xml:id="kwd3">cadmium, Cd</keyword><keyword xml:id="kwd4">germanium, Ge</keyword><keyword xml:id="kwd5">sulfur, S</keyword></keywordGroup><abstractGroup><abstract type="main" xml:lang="en"><title type="main">Abstract</title><p>The NLO semiconductor of title is quantitatively obtained by solid state reaction of stoichiometric amounts of Cd, Ge, S, and a slight excess of Li<sub>2</sub>S (graphite crucible in evacuated silica tube, 750 °C, 144 h).</p></abstract></abstractGroup></contentMeta></header></component></istex:document></istex:metadataXml><mods version="3.6"><titleInfo lang="en"><title>ChemInform Abstract: Li2CdGeS4, a Diamond‐Like Semiconductor with Strong Second‐Order Optical Nonlinearity in the Infrared and Exceptional Laser Damage Threshold.</title></titleInfo><titleInfo type="alternative" contentType="CDATA" lang="en"><title>ChemInform Abstract: Li2CdGeS4, a Diamond‐Like Semiconductor with Strong Second‐Order Optical Nonlinearity in the Infrared and Exceptional Laser Damage Threshold.</title></titleInfo><name type="personal"><namePart type="given">Jacilynn A.</namePart><namePart type="family">Brant</namePart><affiliation>Dep. Chem. Biochem., Duquesne Univ., Pittsburgh, PA 15282, USA</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">Daniel J.</namePart><namePart type="family">Clark</namePart><affiliation>Dep. Chem. Biochem., Duquesne Univ., Pittsburgh, PA 15282, USA</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">Yong Soo</namePart><namePart type="family">Kim</namePart><affiliation>Dep. Chem. Biochem., Duquesne Univ., Pittsburgh, PA 15282, USA</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">Joon I.</namePart><namePart type="family">Jang</namePart><affiliation>Dep. Chem. Biochem., Duquesne Univ., Pittsburgh, PA 15282, USA</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">Jian‐Han</namePart><namePart type="family">Zhang</namePart><affiliation>Dep. Chem. Biochem., Duquesne Univ., Pittsburgh, PA 15282, USA</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">Jennifer A.</namePart><namePart type="family">Aitken</namePart><affiliation>Dep. Chem. Biochem., Duquesne Univ., Pittsburgh, PA 15282, USA</affiliation><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="article" displayLabel="article" authority="ISTEX" authorityURI="https://content-type.data.istex.fr" valueURI="https://content-type.data.istex.fr/ark:/67375/XTP-6N5SZHKN-D">article</genre><originInfo><publisher>WILEY‐VCH Verlag</publisher><place><placeTerm type="text">Weinheim</placeTerm></place><dateIssued encoding="w3cdtf">2014-08-19</dateIssued><copyrightDate encoding="w3cdtf">2014</copyrightDate></originInfo><language><languageTerm type="code" authority="rfc3066">en</languageTerm><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><extent unit="figures">0</extent><extent unit="tables">0</extent><extent unit="references">1</extent></physicalDescription><abstract lang="en">The NLO semiconductor of title is quantitatively obtained by solid state reaction of stoichiometric amounts of Cd, Ge, S, and a slight excess of Li2S (graphite crucible in evacuated silica tube, 750 °C, 144 h).</abstract><subject lang="en"><genre>keywords</genre><topic>optical properties (excluding spectra) (solids and liquids)</topic><topic>lithium, Li</topic><topic>cadmium, Cd</topic><topic>germanium, Ge</topic><topic>sulfur, S</topic></subject><relatedItem type="host"><titleInfo><title>ChemInform</title></titleInfo><titleInfo type="abbreviated"><title>ChemInform</title></titleInfo><genre type="journal" authority="ISTEX" authorityURI="https://publication-type.data.istex.fr" valueURI="https://publication-type.data.istex.fr/ark:/67375/JMC-0GLKJH51-B">journal</genre><subject><genre>article-category</genre><topic>Physical Inorganic Chemistry</topic></subject><identifier type="ISSN">0931-7597</identifier><identifier type="eISSN">1522-2667</identifier><identifier type="DOI">10.1002/(ISSN)1522-2667</identifier><identifier type="PublisherID">CHIN</identifier><part><date>2014</date><detail type="volume"><caption>vol.</caption><number>45</number></detail><detail type="issue"><caption>no.</caption><number>33</number></detail><extent unit="pages"><total>1</total></extent></part></relatedItem><identifier type="istex">A6586C7FFE668E3B24F899B8A4DEB1B3906E9A62</identifier><identifier type="ark">ark:/67375/WNG-BCHKFRN4-0</identifier><identifier type="DOI">10.1002/chin.201433006</identifier><identifier type="ArticleID">CHIN201433006</identifier><accessCondition type="use and reproduction" contentType="copyright">© 2014 WILEY‐VCH Verlag GmbH, Weinheim, Fed. 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