Electronic structure and pitting susceptibility of passive film on carbon steel
Identifieur interne : 001629 ( Istex/Corpus ); précédent : 001628; suivant : 001630Electronic structure and pitting susceptibility of passive film on carbon steel
Auteurs : Y. F. Cheng ; J. L. LuoSource :
- Electrochimica Acta [ 0013-4686 ] ; 1999.
Abstract
The semiconductive properties, electronic structure and pitting susceptibility of passive films formed on A516-70 carbon steel in chromate solutions with and without chloride ions are studied by capacitance measurements, Mott–Schottky analysis and the electrochemical noise technique. The passive film shows features of an amorphous or highly disordered n-type semiconductor. The donor concentration is in the range of 1026–1027 m−3 and decreases with the film formation potential (prepassivation potential). The thickness of the space charge layer ranges from 1 to 6 Å. The flat band potential increases with an increase in the film formation potential. The nonlinearity of Mott–Schottky plots, depending upon the film formation potential, indicates the existence of two donor levels in the space charge layer. When the film formation potential is below −50 mV, the two levels are revealed by two slopes in the Mott–Schottky plots. For a film formed at a prepassivation potential of −50 mV, only the shallow donor level can be ionized due to increase in the stability of the passive film. The onset potential and the transitional potential of metastable pitting, determined by electrochemical noise measurements, coincide with the flat band potential of the film formed at the corrosion potential and the critical potential at which both deep and shallow donor levels are ionized. It is suggested that the divalent iron cation vacancies generated by the ionization of the deep donor level are mainly responsible for pitting corrosion.
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DOI: 10.1016/S0013-4686(99)00011-0
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<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title>Electronic structure and pitting susceptibility of passive film on carbon steel</title><author><name sortKey="Cheng, Y F" sort="Cheng, Y F" uniqKey="Cheng Y" first="Y. F." last="Cheng">Y. F. Cheng</name><affiliation><mods:affiliation>Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alta. Canada T6G 2G6</mods:affiliation></affiliation></author><author><name sortKey="Luo, J L" sort="Luo, J L" uniqKey="Luo J" first="J. L." last="Luo">J. L. Luo</name><affiliation><mods:affiliation>Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alta. Canada T6G 2G6</mods:affiliation></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:71056410084AD6D31B479675D587B1606CE46F26</idno><date when="1999" year="1999">1999</date><idno type="doi">10.1016/S0013-4686(99)00011-0</idno><idno type="url">https://api-v5.istex.fr/document/71056410084AD6D31B479675D587B1606CE46F26/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">001629</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Corpus" wicri:corpus="ISTEX">001629</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a">Electronic structure and pitting susceptibility of passive film on carbon steel</title><author><name sortKey="Cheng, Y F" sort="Cheng, Y F" uniqKey="Cheng Y" first="Y. F." last="Cheng">Y. F. Cheng</name><affiliation><mods:affiliation>Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alta. Canada T6G 2G6</mods:affiliation></affiliation></author><author><name sortKey="Luo, J L" sort="Luo, J L" uniqKey="Luo J" first="J. L." last="Luo">J. L. Luo</name><affiliation><mods:affiliation>Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alta. Canada T6G 2G6</mods:affiliation></affiliation></author></analytic><monogr></monogr><series><title level="j">Electrochimica Acta</title><title level="j" type="abbrev">EA</title><idno type="ISSN">0013-4686</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1999">1999</date><biblScope unit="volume">44</biblScope><biblScope unit="issue">17</biblScope><biblScope unit="page" from="2947">2947</biblScope><biblScope unit="page" to="2957">2957</biblScope></imprint><idno type="ISSN">0013-4686</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0013-4686</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The semiconductive properties, electronic structure and pitting susceptibility of passive films formed on A516-70 carbon steel in chromate solutions with and without chloride ions are studied by capacitance measurements, Mott–Schottky analysis and the electrochemical noise technique. The passive film shows features of an amorphous or highly disordered n-type semiconductor. The donor concentration is in the range of 1026–1027 m−3 and decreases with the film formation potential (prepassivation potential). The thickness of the space charge layer ranges from 1 to 6 Å. The flat band potential increases with an increase in the film formation potential. The nonlinearity of Mott–Schottky plots, depending upon the film formation potential, indicates the existence of two donor levels in the space charge layer. When the film formation potential is below −50 mV, the two levels are revealed by two slopes in the Mott–Schottky plots. For a film formed at a prepassivation potential of −50 mV, only the shallow donor level can be ionized due to increase in the stability of the passive film. The onset potential and the transitional potential of metastable pitting, determined by electrochemical noise measurements, coincide with the flat band potential of the film formed at the corrosion potential and the critical potential at which both deep and shallow donor levels are ionized. It is suggested that the divalent iron cation vacancies generated by the ionization of the deep donor level are mainly responsible for pitting corrosion.</div></front></TEI><istex><corpusName>elsevier</corpusName><author><json:item><name>Y.F. Cheng</name><affiliations><json:string>Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alta. Canada T6G 2G6</json:string></affiliations></json:item><json:item><name>J.L. Luo</name><affiliations><json:string>Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alta. Canada T6G 2G6</json:string></affiliations></json:item></author><subject><json:item><lang><json:string>eng</json:string></lang><value>Electronic structure</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>Semiconductive properties</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>Pitting</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>Passive film</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>Carbon steel</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>Mott–Schottky plot</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>Electrochemical noise</value></json:item></subject><language><json:string>eng</json:string></language><originalGenre><json:string>Full-length article</json:string></originalGenre><abstract>The semiconductive properties, electronic structure and pitting susceptibility of passive films formed on A516-70 carbon steel in chromate solutions with and without chloride ions are studied by capacitance measurements, Mott–Schottky analysis and the electrochemical noise technique. The passive film shows features of an amorphous or highly disordered n-type semiconductor. The donor concentration is in the range of 1026–1027 m−3 and decreases with the film formation potential (prepassivation potential). The thickness of the space charge layer ranges from 1 to 6 Å. The flat band potential increases with an increase in the film formation potential. The nonlinearity of Mott–Schottky plots, depending upon the film formation potential, indicates the existence of two donor levels in the space charge layer. When the film formation potential is below −50 mV, the two levels are revealed by two slopes in the Mott–Schottky plots. For a film formed at a prepassivation potential of −50 mV, only the shallow donor level can be ionized due to increase in the stability of the passive film. The onset potential and the transitional potential of metastable pitting, determined by electrochemical noise measurements, coincide with the flat band potential of the film formed at the corrosion potential and the critical potential at which both deep and shallow donor levels are ionized. It is suggested that the divalent iron cation vacancies generated by the ionization of the deep donor level are mainly responsible for pitting corrosion.</abstract><qualityIndicators><score>7.808</score><pdfWordCount>5481</pdfWordCount><pdfCharCount>32582</pdfCharCount><pdfVersion>1.2</pdfVersion><pdfPageCount>11</pdfPageCount><pdfPageSize>543 x 745 pts</pdfPageSize><refBibsNative>true</refBibsNative><abstractWordCount>234</abstractWordCount><abstractCharCount>1535</abstractCharCount><keywordCount>7</keywordCount></qualityIndicators><title>Electronic structure and pitting susceptibility of passive film on carbon steel</title><pii><json:string>S0013-4686(99)00011-0</json:string></pii><genre><json:string>research-article</json:string></genre><host><title>Electrochimica Acta</title><language><json:string>unknown</json:string></language><publicationDate>1999</publicationDate><issn><json:string>0013-4686</json:string></issn><pii><json:string>S0013-4686(00)X0077-1</json:string></pii><volume>44</volume><issue>17</issue><pages><first>2947</first><last>2957</last></pages><genre><json:string>journal</json:string></genre></host><categories><wos><json:string>science</json:string><json:string>electrochemistry</json:string></wos><scienceMetrix><json:string>applied sciences</json:string><json:string>enabling & strategic technologies</json:string><json:string>energy</json:string></scienceMetrix><inist><json:string>sciences appliquees, technologies et medecines</json:string><json:string>sciences exactes et technologie</json:string><json:string>terre, ocean, espace</json:string><json:string>sciences de la terre</json:string></inist></categories><publicationDate>1999</publicationDate><copyrightDate>1999</copyrightDate><doi><json:string>10.1016/S0013-4686(99)00011-0</json:string></doi><id>71056410084AD6D31B479675D587B1606CE46F26</id><fulltext><json:item><extension>pdf</extension><original>true</original><mimetype>application/pdf</mimetype><uri>https://api-v5.istex.fr/document/71056410084AD6D31B479675D587B1606CE46F26/fulltext/pdf</uri></json:item><json:item><extension>zip</extension><original>false</original><mimetype>application/zip</mimetype><uri>https://api-v5.istex.fr/document/71056410084AD6D31B479675D587B1606CE46F26/fulltext/zip</uri></json:item><istex:fulltextTEI uri="https://api-v5.istex.fr/document/71056410084AD6D31B479675D587B1606CE46F26/fulltext/tei"><teiHeader><fileDesc><titleStmt><title level="a">Electronic structure and pitting susceptibility of passive film on carbon steel</title></titleStmt><publicationStmt><authority>ISTEX</authority><publisher>ELSEVIER</publisher><availability><p>©1999 Elsevier Science Ltd</p></availability><date>1999</date></publicationStmt><notesStmt><note type="content">Fig. 1: The capacitance–potential curve obtained at 1000 Hz in 0.01 M Na2CrO4 solution. The specimen was prepassivated at corrosion potential.</note><note type="content">Fig. 2: The capacitance–potential curves measured at different frequencies in 0.01 M Na2CrO4 solution. The specimens were prepassivated at corrosion potential.</note><note type="content">Fig. 3: Mott–Schottky plots of the capacitance measured at different frequencies. The specimens were prepassivated at corrosion potential.</note><note type="content">Fig. 4: Mott–Schottky plots measured at 1000 Hz in 0.01 M Na2CrO4 solution for passive films formed at three different film formation potentials.</note><note type="content">Fig. 5: Energy level diagram of a semiconductor with two discrete donors. (a) At flat band conditions, the donor states at ED1 are completely ionized while those at ED2 are occupied. (b) When eΔΦsc≤EF−ED2, the charge in the depletion layer is due to the ionized donors at ED1. (c) When eΔΦsc≥EF−ED2, donors at ED2 are also ionized and contribute to the space charge (Ref.[29]).</note><note type="content">Fig. 6: The dependence of the donor densities of shallow level (ND1), deep level (ND2) and total ND1+ND2 on the film formation potential at 1000 Hz in 0.01 M Na2CrO4 solution.</note><note type="content">Fig. 7: The dependence of the thickness of space charge layer on the film formation potential at 1000 Hz in 0.01 M Na2CrO4 solution.</note><note type="content">Fig. 8: The dependence of the flat band potential of passive films on the film formation potential at 1000 Hz in 0.01 M Na2CrO4 solution.</note><note type="content">Fig. 9: The polarization curves of A516-70 carbon steel in the testing solutions.</note><note type="content">Fig. 10: The typical current transients generated during metastable pitting of A516-70 carbon steel at −50 mV (vs. Ag/AgCl) in 0.01 M Na2CrO4+0.05 M NaCl solution.</note><note type="content">Fig. 11: Potential dependence of the initiation rate of metastable pits for A516-70 carbon steel during 4,000 s of immersion in 0.01 M Na2CrO4 solution containing 0.01 M and 0.05 M Cl−.</note><note type="content">Fig. 12: Mott–Schottky plots at 1000 Hz in 0.01 M Na2CrO4 solutions containing different Cl− concentrations. The specimens were prepassivated at corrosion potential.</note></notesStmt><sourceDesc><biblStruct type="inbook"><analytic><title level="a">Electronic structure and pitting susceptibility of passive film on carbon steel</title><author xml:id="author-0000"><persName><forename type="first">Y.F.</forename><surname>Cheng</surname></persName><affiliation>Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alta. Canada T6G 2G6</affiliation></author><author xml:id="author-0001"><persName><forename type="first">J.L.</forename><surname>Luo</surname></persName><note type="correspondence"><p>Corresponding author. Tel.: +1-403-492-3321; fax: +1-403-492-2881; e-mail: jingli.luo@ualberta.ca</p></note><affiliation>Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alta. Canada T6G 2G6</affiliation></author><idno type="istex">71056410084AD6D31B479675D587B1606CE46F26</idno><idno type="DOI">10.1016/S0013-4686(99)00011-0</idno><idno type="PII">S0013-4686(99)00011-0</idno></analytic><monogr><title level="j">Electrochimica Acta</title><title level="j" type="abbrev">EA</title><idno type="pISSN">0013-4686</idno><idno type="PII">S0013-4686(00)X0077-1</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1999"></date><biblScope unit="volume">44</biblScope><biblScope unit="issue">17</biblScope><biblScope unit="page" from="2947">2947</biblScope><biblScope unit="page" to="2957">2957</biblScope></imprint></monogr></biblStruct></sourceDesc></fileDesc><profileDesc><creation><date>1999</date></creation><langUsage><language ident="en">en</language></langUsage><abstract xml:lang="en"><p>The semiconductive properties, electronic structure and pitting susceptibility of passive films formed on A516-70 carbon steel in chromate solutions with and without chloride ions are studied by capacitance measurements, Mott–Schottky analysis and the electrochemical noise technique. The passive film shows features of an amorphous or highly disordered n-type semiconductor. The donor concentration is in the range of 1026–1027 m−3 and decreases with the film formation potential (prepassivation potential). The thickness of the space charge layer ranges from 1 to 6 Å. The flat band potential increases with an increase in the film formation potential. The nonlinearity of Mott–Schottky plots, depending upon the film formation potential, indicates the existence of two donor levels in the space charge layer. When the film formation potential is below −50 mV, the two levels are revealed by two slopes in the Mott–Schottky plots. For a film formed at a prepassivation potential of −50 mV, only the shallow donor level can be ionized due to increase in the stability of the passive film. The onset potential and the transitional potential of metastable pitting, determined by electrochemical noise measurements, coincide with the flat band potential of the film formed at the corrosion potential and the critical potential at which both deep and shallow donor levels are ionized. It is suggested that the divalent iron cation vacancies generated by the ionization of the deep donor level are mainly responsible for pitting corrosion.</p></abstract><textClass><keywords scheme="keyword"><list><head>Keywords</head><item><term>Electronic structure</term></item><item><term>Semiconductive properties</term></item><item><term>Pitting</term></item><item><term>Passive film</term></item><item><term>Carbon steel</term></item><item><term>Mott–Schottky plot</term></item><item><term>Electrochemical noise</term></item></list></keywords></textClass></profileDesc><revisionDesc><change when="1999">Published</change></revisionDesc></teiHeader></istex:fulltextTEI><json:item><extension>txt</extension><original>false</original><mimetype>text/plain</mimetype><uri>https://api-v5.istex.fr/document/71056410084AD6D31B479675D587B1606CE46F26/fulltext/txt</uri></json:item></fulltext><metadata><istex:metadataXml wicri:clean="Elsevier, elements deleted: ce:floats; body; tail"><istex:xmlDeclaration>version="1.0" encoding="utf-8"</istex:xmlDeclaration><istex:docType PUBLIC="-//ES//DTD journal article DTD version 4.5.2//EN//XML" URI="art452.dtd" name="istex:docType"><istex:entity SYSTEM="gr1" NDATA="IMAGE" name="gr1"></istex:entity><istex:entity SYSTEM="gr2" NDATA="IMAGE" name="gr2"></istex:entity><istex:entity SYSTEM="gr3" NDATA="IMAGE" name="gr3"></istex:entity><istex:entity SYSTEM="gr4" NDATA="IMAGE" name="gr4"></istex:entity><istex:entity SYSTEM="gr5" NDATA="IMAGE" name="gr5"></istex:entity><istex:entity SYSTEM="gr6" NDATA="IMAGE" name="gr6"></istex:entity><istex:entity SYSTEM="gr7" NDATA="IMAGE" name="gr7"></istex:entity><istex:entity SYSTEM="gr8" NDATA="IMAGE" name="gr8"></istex:entity><istex:entity SYSTEM="gr9" NDATA="IMAGE" name="gr9"></istex:entity><istex:entity SYSTEM="gr10" NDATA="IMAGE" name="gr10"></istex:entity><istex:entity SYSTEM="gr11" NDATA="IMAGE" name="gr11"></istex:entity><istex:entity SYSTEM="gr12" NDATA="IMAGE" name="gr12"></istex:entity></istex:docType><istex:document><converted-article version="4.5.2" docsubtype="fla"><item-info><jid>EA</jid><aid>2470</aid><ce:pii>S0013-4686(99)00011-0</ce:pii><ce:doi>10.1016/S0013-4686(99)00011-0</ce:doi><ce:copyright year="1999" type="full-transfer">Elsevier Science Ltd</ce:copyright></item-info><head><ce:title>Electronic structure and pitting susceptibility of passive film on carbon steel</ce:title><ce:author-group><ce:author><ce:given-name>Y.F.</ce:given-name><ce:surname>Cheng</ce:surname></ce:author><ce:author><ce:given-name>J.L.</ce:given-name><ce:surname>Luo</ce:surname><ce:cross-ref refid="CORR1">*</ce:cross-ref></ce:author><ce:affiliation><ce:textfn>Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alta. Canada T6G 2G6</ce:textfn></ce:affiliation><ce:correspondence id="CORR1"><ce:label>*</ce:label><ce:text>Corresponding author. Tel.: +1-403-492-3321; fax: +1-403-492-2881; e-mail: jingli.luo@ualberta.ca</ce:text></ce:correspondence></ce:author-group><ce:date-received day="11" month="12" year="1998"></ce:date-received><ce:abstract><ce:section-title>Abstract</ce:section-title><ce:abstract-sec><ce:simple-para>The semiconductive properties, electronic structure and pitting susceptibility of passive films formed on A516-70 carbon steel in chromate solutions with and without chloride ions are studied by capacitance measurements, Mott–Schottky analysis and the electrochemical noise technique. The passive film shows features of an amorphous or highly disordered n-type semiconductor. The donor concentration is in the range of 10<ce:sup>26</ce:sup>–10<ce:sup>27</ce:sup> m<ce:sup>−3</ce:sup> and decreases with the film formation potential (prepassivation potential). The thickness of the space charge layer ranges from 1 to 6 Å. The flat band potential increases with an increase in the film formation potential. The nonlinearity of Mott–Schottky plots, depending upon the film formation potential, indicates the existence of two donor levels in the space charge layer. When the film formation potential is below −50 mV, the two levels are revealed by two slopes in the Mott–Schottky plots. For a film formed at a prepassivation potential of −50 mV, only the shallow donor level can be ionized due to increase in the stability of the passive film. The onset potential and the transitional potential of metastable pitting, determined by electrochemical noise measurements, coincide with the flat band potential of the film formed at the corrosion potential and the critical potential at which both deep and shallow donor levels are ionized. It is suggested that the divalent iron cation vacancies generated by the ionization of the deep donor level are mainly responsible for pitting corrosion.</ce:simple-para></ce:abstract-sec></ce:abstract><ce:keywords class="keyword"><ce:section-title>Keywords</ce:section-title><ce:keyword><ce:text>Electronic structure</ce:text></ce:keyword><ce:keyword><ce:text>Semiconductive properties</ce:text></ce:keyword><ce:keyword><ce:text>Pitting</ce:text></ce:keyword><ce:keyword><ce:text>Passive film</ce:text></ce:keyword><ce:keyword><ce:text>Carbon steel</ce:text></ce:keyword><ce:keyword><ce:text>Mott–Schottky plot</ce:text></ce:keyword><ce:keyword><ce:text>Electrochemical noise</ce:text></ce:keyword></ce:keywords></head></converted-article></istex:document></istex:metadataXml><mods version="3.6"><titleInfo><title>Electronic structure and pitting susceptibility of passive film on carbon steel</title></titleInfo><titleInfo type="alternative" contentType="CDATA"><title>Electronic structure and pitting susceptibility of passive film on carbon steel</title></titleInfo><name type="personal"><namePart type="given">Y.F.</namePart><namePart type="family">Cheng</namePart><affiliation>Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alta. Canada T6G 2G6</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">J.L.</namePart><namePart type="family">Luo</namePart><affiliation>Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alta. Canada T6G 2G6</affiliation><description>Corresponding author. Tel.: +1-403-492-3321; fax: +1-403-492-2881; e-mail: jingli.luo@ualberta.ca</description><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="research-article" displayLabel="Full-length article"></genre><originInfo><publisher>ELSEVIER</publisher><dateIssued encoding="w3cdtf">1999</dateIssued><copyrightDate encoding="w3cdtf">1999</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm><languageTerm type="code" authority="rfc3066">en</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="en">The semiconductive properties, electronic structure and pitting susceptibility of passive films formed on A516-70 carbon steel in chromate solutions with and without chloride ions are studied by capacitance measurements, Mott–Schottky analysis and the electrochemical noise technique. The passive film shows features of an amorphous or highly disordered n-type semiconductor. The donor concentration is in the range of 1026–1027 m−3 and decreases with the film formation potential (prepassivation potential). The thickness of the space charge layer ranges from 1 to 6 Å. The flat band potential increases with an increase in the film formation potential. The nonlinearity of Mott–Schottky plots, depending upon the film formation potential, indicates the existence of two donor levels in the space charge layer. When the film formation potential is below −50 mV, the two levels are revealed by two slopes in the Mott–Schottky plots. For a film formed at a prepassivation potential of −50 mV, only the shallow donor level can be ionized due to increase in the stability of the passive film. The onset potential and the transitional potential of metastable pitting, determined by electrochemical noise measurements, coincide with the flat band potential of the film formed at the corrosion potential and the critical potential at which both deep and shallow donor levels are ionized. It is suggested that the divalent iron cation vacancies generated by the ionization of the deep donor level are mainly responsible for pitting corrosion.</abstract><note type="content">Fig. 1: The capacitance–potential curve obtained at 1000 Hz in 0.01 M Na2CrO4 solution. The specimen was prepassivated at corrosion potential.</note><note type="content">Fig. 2: The capacitance–potential curves measured at different frequencies in 0.01 M Na2CrO4 solution. The specimens were prepassivated at corrosion potential.</note><note type="content">Fig. 3: Mott–Schottky plots of the capacitance measured at different frequencies. The specimens were prepassivated at corrosion potential.</note><note type="content">Fig. 4: Mott–Schottky plots measured at 1000 Hz in 0.01 M Na2CrO4 solution for passive films formed at three different film formation potentials.</note><note type="content">Fig. 5: Energy level diagram of a semiconductor with two discrete donors. (a) At flat band conditions, the donor states at ED1 are completely ionized while those at ED2 are occupied. (b) When eΔΦsc≤EF−ED2, the charge in the depletion layer is due to the ionized donors at ED1. (c) When eΔΦsc≥EF−ED2, donors at ED2 are also ionized and contribute to the space charge (Ref.[29]).</note><note type="content">Fig. 6: The dependence of the donor densities of shallow level (ND1), deep level (ND2) and total ND1+ND2 on the film formation potential at 1000 Hz in 0.01 M Na2CrO4 solution.</note><note type="content">Fig. 7: The dependence of the thickness of space charge layer on the film formation potential at 1000 Hz in 0.01 M Na2CrO4 solution.</note><note type="content">Fig. 8: The dependence of the flat band potential of passive films on the film formation potential at 1000 Hz in 0.01 M Na2CrO4 solution.</note><note type="content">Fig. 9: The polarization curves of A516-70 carbon steel in the testing solutions.</note><note type="content">Fig. 10: The typical current transients generated during metastable pitting of A516-70 carbon steel at −50 mV (vs. Ag/AgCl) in 0.01 M Na2CrO4+0.05 M NaCl solution.</note><note type="content">Fig. 11: Potential dependence of the initiation rate of metastable pits for A516-70 carbon steel during 4,000 s of immersion in 0.01 M Na2CrO4 solution containing 0.01 M and 0.05 M Cl−.</note><note type="content">Fig. 12: Mott–Schottky plots at 1000 Hz in 0.01 M Na2CrO4 solutions containing different Cl− concentrations. The specimens were prepassivated at corrosion potential.</note><subject><genre>Keywords</genre><topic>Electronic structure</topic><topic>Semiconductive properties</topic><topic>Pitting</topic><topic>Passive film</topic><topic>Carbon steel</topic><topic>Mott–Schottky plot</topic><topic>Electrochemical noise</topic></subject><relatedItem type="host"><titleInfo><title>Electrochimica Acta</title></titleInfo><titleInfo type="abbreviated"><title>EA</title></titleInfo><genre type="journal">journal</genre><originInfo><dateIssued encoding="w3cdtf">19990415</dateIssued></originInfo><identifier type="ISSN">0013-4686</identifier><identifier type="PII">S0013-4686(00)X0077-1</identifier><part><date>19990415</date><detail type="volume"><number>44</number><caption>vol.</caption></detail><detail type="issue"><number>17</number><caption>no.</caption></detail><extent unit="issue pages"><start>2827</start><end>2968</end></extent><extent unit="pages"><start>2947</start><end>2957</end></extent></part></relatedItem><identifier type="istex">71056410084AD6D31B479675D587B1606CE46F26</identifier><identifier type="DOI">10.1016/S0013-4686(99)00011-0</identifier><identifier type="PII">S0013-4686(99)00011-0</identifier><accessCondition type="use and reproduction" contentType="copyright">©1999 Elsevier Science Ltd</accessCondition><recordInfo><recordContentSource>ELSEVIER</recordContentSource><recordOrigin>Elsevier Science Ltd, ©1999</recordOrigin></recordInfo></mods></metadata><serie></serie></istex></record>Pour manipuler ce document sous Unix (Dilib)
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|clé= ISTEX:71056410084AD6D31B479675D587B1606CE46F26
|texte= Electronic structure and pitting susceptibility of passive film on carbon steel
}}
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