Experimental obviousness of the necessity for a thin Ni interfacial layer to obtain highly ordered photoconductive MoS2 films
Identifieur interne : 000522 ( PascalFrancis/Checkpoint ); précédent : 000521; suivant : 000523Experimental obviousness of the necessity for a thin Ni interfacial layer to obtain highly ordered photoconductive MoS2 films
Auteurs : H. Hadouda [Algérie] ; J. C. Bernede [France] ; E. Gourmelon [France] ; J. Pouzet [France]Source :
- Journal of materials science [ 0022-2461 ] ; 1997.
Descripteurs français
- Pascal (Inist)
- Wicri :
- topic : Nickel.
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Abstract
It is shown that photosensitive films can be obtained by solid state reaction, induced by annealing, between the constituents Mo and S sequentially deposited in thin film form if the substrate is coated with a thin (10-20 nm) NiCr layer. The thin Mo and S layers are deposited in the atomic ratio Mo : S = 1:3. The substrates used are mica sheets. An annealing at 1073 K for 30 min under argon flow allows one to obtain highly 2H-MoS2 crystallized films. The thickness of the crystallites is similar to that of the films; they have their c-axes perpendicular to the plane of the substrate. After crystallization, X-ray photoelectron spectroscopy (XPS) depth profiles show that Ni is diffused all over the thicknesses of the films and that 1 at% of Ni is visible at the surfaces of the films. The direct current (d.c.) conductivity of these films is nearly similar to that of single crystals. The films are photosensitive. The room temperature photoconductivity, which results from interband transitions, allows one to measure the direct band gap that is similar to that of a single crystal. When bare mica substrates (without Ni) are used MoS2 films are obtained but they are poorly crystallized and not photoconductive, which shows an NiCr interfacial layer is necessary. Probably a melting phase NiSx forms, which increases the mobility of the atom at grain boundaries.
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Gourmelon</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, F.S.T.N, 2 rue de la Houssinière, BP 92 208</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName></affiliation></author><author><name sortKey="Pouzet, J" sort="Pouzet, J" uniqKey="Pouzet J" first="J." last="Pouzet">J. 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Hadouda</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>L.P.M.C.E., Université d'Oran és Sénia, BP 1642</s1><s2>Oran</s2><s3>DZA</s3><sZ>1 aut.</sZ></inist:fA14><country>Algérie</country><placeName><settlement type="city">Oran</settlement><region nuts="2">Wilaya d'Oran</region></placeName></affiliation></author><author><name sortKey="Bernede, J C" sort="Bernede, J C" uniqKey="Bernede J" first="J. C." last="Bernede">J. C. Bernede</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, F.S.T.N, 2 rue de la Houssinière, BP 92 208</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName></affiliation></author><author><name sortKey="Gourmelon, E" sort="Gourmelon, E" uniqKey="Gourmelon E" first="E." last="Gourmelon">E. Gourmelon</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, F.S.T.N, 2 rue de la Houssinière, BP 92 208</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName></affiliation></author><author><name sortKey="Pouzet, J" sort="Pouzet, J" uniqKey="Pouzet J" first="J." last="Pouzet">J. Pouzet</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, F.S.T.N, 2 rue de la Houssinière, BP 92 208</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName></affiliation></author></analytic><series><title level="j" type="main">Journal of materials science</title><title level="j" type="abbreviated">J. mater. sci.</title><idno type="ISSN">0022-2461</idno><imprint><date when="1997">1997</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Journal of materials science</title><title level="j" type="abbreviated">J. mater. sci.</title><idno type="ISSN">0022-2461</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Crystal growth</term><term>Experimental study</term><term>Interfacial layer</term><term>Molybdenum sulfides</term><term>Nickel</term><term>Photoconductors</term><term>Photoelectron spectroscopy</term><term>Solid state reaction</term><term>Solid-solid interfaces</term><term>Thin films</term><term>X radiation</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Couche mince</term><term>Croissance cristalline</term><term>Réaction état solide</term><term>Interface solide solide</term><term>Couche interfaciale</term><term>Nickel</term><term>Composé binaire</term><term>Molybdène sulfure</term><term>Photoconducteur</term><term>Spectrométrie photoélectron</term><term>Rayon X</term><term>8115N</term><term>MoS2</term><term>Mo S</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Nickel</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">It is shown that photosensitive films can be obtained by solid state reaction, induced by annealing, between the constituents Mo and S sequentially deposited in thin film form if the substrate is coated with a thin (10-20 nm) NiCr layer. The thin Mo and S layers are deposited in the atomic ratio Mo : S = 1:3. The substrates used are mica sheets. An annealing at 1073 K for 30 min under argon flow allows one to obtain highly 2H-MoS<sub>2</sub> crystallized films. The thickness of the crystallites is similar to that of the films; they have their c-axes perpendicular to the plane of the substrate. After crystallization, X-ray photoelectron spectroscopy (XPS) depth profiles show that Ni is diffused all over the thicknesses of the films and that 1 at% of Ni is visible at the surfaces of the films. The direct current (d.c.) conductivity of these films is nearly similar to that of single crystals. The films are photosensitive. The room temperature photoconductivity, which results from interband transitions, allows one to measure the direct band gap that is similar to that of a single crystal. When bare mica substrates (without Ni) are used MoS<sub>2</sub> films are obtained but they are poorly crystallized and not photoconductive, which shows an NiCr interfacial layer is necessary. Probably a melting phase NiS<sub>x</sub> forms, which increases the mobility of the atom at grain boundaries.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-2461</s0></fA01><fA02 i1="01"><s0>JMTSAS</s0></fA02><fA03 i2="1"><s0>J. mater. sci.</s0></fA03><fA05><s2>32</s2></fA05><fA06><s2>15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Experimental obviousness of the necessity for a thin Ni interfacial layer to obtain highly ordered photoconductive MoS<sub>2</sub> films</s1></fA08><fA11 i1="01" i2="1"><s1>HADOUDA (H.)</s1></fA11><fA11 i1="02" i2="1"><s1>BERNEDE (J. C.)</s1></fA11><fA11 i1="03" i2="1"><s1>GOURMELON (E.)</s1></fA11><fA11 i1="04" i2="1"><s1>POUZET (J.)</s1></fA11><fA14 i1="01"><s1>L.P.M.C.E., Université d'Oran és Sénia, BP 1642</s1><s2>Oran</s2><s3>DZA</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, F.S.T.N, 2 rue de la Houssinière, BP 92 208</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>4019-4024</s1></fA20><fA21><s1>1997</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12733</s2><s5>354000067860090160</s5></fA43><fA44><s0>0000</s0><s1>© 1997 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>97-0413568</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of materials science</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>It is shown that photosensitive films can be obtained by solid state reaction, induced by annealing, between the constituents Mo and S sequentially deposited in thin film form if the substrate is coated with a thin (10-20 nm) NiCr layer. The thin Mo and S layers are deposited in the atomic ratio Mo : S = 1:3. The substrates used are mica sheets. An annealing at 1073 K for 30 min under argon flow allows one to obtain highly 2H-MoS<sub>2</sub> crystallized films. The thickness of the crystallites is similar to that of the films; they have their c-axes perpendicular to the plane of the substrate. After crystallization, X-ray photoelectron spectroscopy (XPS) depth profiles show that Ni is diffused all over the thicknesses of the films and that 1 at% of Ni is visible at the surfaces of the films. The direct current (d.c.) conductivity of these films is nearly similar to that of single crystals. The films are photosensitive. The room temperature photoconductivity, which results from interband transitions, allows one to measure the direct band gap that is similar to that of a single crystal. When bare mica substrates (without Ni) are used MoS<sub>2</sub> films are obtained but they are poorly crystallized and not photoconductive, which shows an NiCr interfacial layer is necessary. 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Hadouda</name></region></country><country name="France"><region name="Pays de la Loire"><name sortKey="Bernede, J C" sort="Bernede, J C" uniqKey="Bernede J" first="J. C." last="Bernede">J. C. Bernede</name></region><name sortKey="Gourmelon, E" sort="Gourmelon, E" uniqKey="Gourmelon E" first="E." last="Gourmelon">E. Gourmelon</name><name sortKey="Pouzet, J" sort="Pouzet, J" uniqKey="Pouzet J" first="J." last="Pouzet">J. Pouzet</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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